Showing 2569–2580 of 3680 results
ON Semiconductor AFGHL40T120RH
In stock
| Manufacturer |
onsemi |
|---|---|
| Package |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGHL40 |
| Brand |
onsemi |
| Factory Pack Quantity:Factory Pack Quantity |
450 |
| Min Operating Temperature |
-65 °C |
| Contact Plating |
Lead, Tin |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Packaging |
Tape & Reel |
| Series |
Automotive, AEC-Q101 |
| Tolerance |
0.1 % |
| Temperature Coefficient |
50 ppm/°C |
| Resistance |
150 Ω |
| Max Operating Temperature |
175 °C |
| Mfr |
onsemi |
| Composition |
Metal Film |
| Gate Charge |
277 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Input Type |
Standard |
| Power - Max |
400 W |
| Voltage - Collector Emitter Breakdown (Max) |
1250 V |
| Current - Collector (Ic) (Max) |
48 A |
| Test Condition |
600V, 40A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Power Rating |
500 mW |
| Military Standard |
MIL-PRF-55182 |
| Td (on/off) @ 25°C |
37ns/150ns |
| Switching Energy |
3.7mJ (on), 1.2mJ (off) |
| Reverse Recovery Time (trr) |
195 ns |
| Product Category |
onsemi |
| Diameter |
4.57 mm |
| Length |
17.45 mm |
| Width |
4.57 mm |
| Radiation Hardening |
No |
| Lead Free |
Contains Lead |
ON Semiconductor AFGHL50T65SQDC
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Current-Collector (Ic) (Max) |
100A |
| Test Conditions |
400V, 12.5A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Factory Lead Time |
4 Weeks |
| Reach Compliance Code |
not_compliant |
| Terminal Finish |
Tin (Sn) |
| Input Type |
Standard |
| Power - Max |
238W |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| IGBT Type |
Field Stop |
| Gate Charge |
94nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
17.6ns/94.4ns |
| Switching Energy |
131μJ (on), 96μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor AFGHL75T65SQ
In stock
| Manufacturer |
onsemi |
|---|---|
| Maximum Gate Emitter Voltage |
±20V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGHL75 |
| Brand |
onsemi |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
80 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
onsemi |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Package Type |
TO-247 |
| Pd - Power Dissipation |
375 W |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 75A, 4.7Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
375W |
| Input Type |
Standard |
| Power - Max |
375 W |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
Automotive, AEC-Q101 |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Continuous Collector Current |
75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
139 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
25ns/106ns |
| Switching Energy |
1.86mJ (on), 1.13mJ (off) |
| Product Category |
IGBT Transistors |
ON Semiconductor AFGHL75T65SQD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 75A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
Automotive, AEC-Q101 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Input Type |
Standard |
| Power - Max |
375W |
| Reverse Recovery Time |
36ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
136nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
25ns/106ns |
| Switching Energy |
1.86mJ (on), 1.13mJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor AFGHL75T65SQDT
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 75A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Series |
Automotive, AEC-Q101 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Factory Lead Time |
20 Weeks |
| Power - Max |
375W |
| Input Type |
Standard |
| Reverse Recovery Time |
75ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
136nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
24ns/106ns |
| Switching Energy |
2.12mJ (on), 1.14mJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor AFGY120T65SPD-B4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGY120 |
| Mfr |
onsemi |
| Package |
Tube |
| Product Status |
Obsolete |
| Product Style |
BGA Socketing Systems |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Type |
Socket Adapter Systems |
| Pitch |
1.00mm Pitch |
| Input Type |
Standard |
| Power - Max |
882 W |
| Product Type |
Socket Adapter Systems |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Current - Collector (Ic) (Max) |
240 A |
| Test Condition |
400V, 120A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 120A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
243 nC |
| Current - Collector Pulsed (Icm) |
378 A |
| Td (on/off) @ 25°C |
53ns/102ns |
| Switching Energy |
6.8mJ (on), 3.5mJ (off) |
| Reverse Recovery Time (trr) |
123 ns |
ON Semiconductor FGA15N120ANDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3PN |
| Current-Collector (Ic) (Max) |
24A |
| Test Conditions |
600V, 15A, 20Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
200W |
| Reverse Recovery Time |
330ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 15A |
| IGBT Type |
NPT |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
90ns/310ns |
| Switching Energy |
3.27mJ (on), 600μJ (off) |
ON Semiconductor FGA15N120ANTDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 15A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation |
186W |
| Mount |
Through Hole |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
186W |
| Current Rating |
15A |
| Element Configuration |
Single |
| Published |
2006 |
| Input Type |
Standard |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
45A |
| Max Collector Current |
30A |
| Reverse Recovery Time |
330ns |
| Continuous Drain Current (ID) |
15A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Drain to Source Breakdown Voltage |
1.2kV |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 15A |
| IGBT Type |
NPT and Trench |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Td (on/off) @ 25°C |
15ns/160ns |
| Switching Energy |
3mJ (on), 600μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
8.5V |
| Fall Time-Max (tf) |
180ns |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGA15N120ANTDTU-F109
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Input Type |
Standard |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Surface Mount |
NO |
| Current-Collector (Ic) (Max) |
30A |
| Test Conditions |
600V, 15A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Factory Lead Time |
6 Weeks |
| Polarity/Channel Type |
N-CHANNEL |
| Power - Max |
186W |
| Reverse Recovery Time |
330ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Power Dissipation-Max (Abs) |
186W |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 15A |
| IGBT Type |
NPT and Trench |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
15ns/160ns |
| Switching Energy |
3mJ (on), 600μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
8.5V |
| Fall Time-Max (tf) |
180ns |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA15S125P
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.25kV |
| Number of Elements |
1 |
| Max Power Dissipation |
136W |
| Factory Lead Time |
4 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.72V @ 15V, 15A |
| Turn Off Time-Nom (toff) |
670 ns |
| Power Dissipation |
136W |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.25kV |
| Max Collector Current |
30A |
| Voltage - Collector Emitter Breakdown (Max) |
1250V |
| Turn On Time |
331 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| IGBT Type |
Trench |
| Gate Charge |
129nC |
| Current - Collector Pulsed (Icm) |
45A |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
20.1mm |
| Length |
15.8mm |
| Width |
5mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGA180N30DTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Voltage - Rated DC |
300V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-3P |
| Collector-Emitter Breakdown Voltage |
300V |
| Current-Collector (Ic) (Max) |
180A |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Mount |
Through Hole |
| Current Rating |
10A |
| Max Power Dissipation |
480W |
| Element Configuration |
Single |
| Power Dissipation |
480W |
| Input Type |
Standard |
| Power - Max |
480W |
| Collector Emitter Voltage (VCEO) |
300V |
| Max Collector Current |
180A |
| Reverse Recovery Time |
21 ns |
| Voltage - Collector Emitter Breakdown (Max) |
300V |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 40A |
| Gate Charge |
185nC |
| Current - Collector Pulsed (Icm) |
450A |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGA180N33ATTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
330V |
| Terminal Finish |
MATTE TIN |
| Number of Elements |
1 |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
44 Weeks |
| Max Collector Current |
180A |
| HTS Code |
8541.29.00.95 |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
390W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
330V |
| Reverse Recovery Time |
27 ns |
| Turn On Time |
101 ns |
| Additional Feature |
LOW CONDUCTION LOSS |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
362 ns |
| IGBT Type |
Trench |
| Gate Charge |
169nC |
| Current - Collector Pulsed (Icm) |
450A |
| Radiation Hardening |
No |
| Max Power Dissipation |
390W |
| RoHS Status |
ROHS3 Compliant |