Showing 2581–2592 of 3680 results
ON Semiconductor FGA20N120FTDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Turn Off Delay Time |
143 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
298W |
| Mount |
Through Hole |
| Factory Lead Time |
11 Weeks |
| IGBT Type |
Trench Field Stop |
| Turn On Delay Time |
30 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
40A |
| Reverse Recovery Time |
447 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
1.2kV |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| Gate Charge |
137nC |
| Current - Collector Pulsed (Icm) |
60A |
| Input Type |
Standard |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
18.9mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power - Max |
298W |
| Lead Free |
Lead Free |
ON Semiconductor FGA20S125P-SN00336
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Max Power Dissipation |
250W |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
1.25kV |
| Test Conditions |
600V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
4 Weeks |
| Power - Max |
250W |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.5V |
| Max Collector Current |
40A |
| Voltage - Collector Emitter Breakdown (Max) |
1250V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| IGBT Type |
Trench |
| Gate Charge |
153nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
10ns/400ns |
| Switching Energy |
740μJ (on), 500μJ (off) |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA20S140P
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.4kV |
| Number of Elements |
1 |
| Max Power Dissipation |
272W |
| Factory Lead Time |
6 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
776 ns |
| Input Type |
Standard |
| Power - Max |
272W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.4kV |
| Max Collector Current |
40A |
| Voltage - Collector Emitter Breakdown (Max) |
1400V |
| Turn On Time |
322 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
203.5nC |
| Current - Collector Pulsed (Icm) |
60A |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
20.1mm |
| Length |
15.8mm |
| Width |
5mm |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGA25N120ANTDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2004 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.40101g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 10 Ω, 15V |
| Turn Off Delay Time |
190 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
6 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
312W |
| Current Rating |
50A |
| Base Part Number |
FGA25N120A |
| Packaging |
Tube |
| Power Dissipation |
312mW |
| IGBT Type |
NPT and Trench |
| Gate Charge |
200nC |
| Rise Time |
60ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
50A |
| Reverse Recovery Time |
350 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.65V @ 15V, 50A |
| Max Junction Temperature (Tj) |
150°C |
| Continuous Collector Current |
50A |
| Input Type |
Standard |
| Turn On Delay Time |
50 ns |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
50ns/190ns |
| Switching Energy |
4.1mJ (on), 960μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
23.8mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGA25N120ANTDTU-F109
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 10 Ω, 15V |
| Element Configuration |
Single |
| Factory Lead Time |
6 Weeks |
| Published |
2004 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
312W |
| Base Part Number |
FGA25N120A |
| Rise Time-Max |
90ns |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
50ns/190ns |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
50A |
| Reverse Recovery Time |
350 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.65V @ 15V, 50A |
| IGBT Type |
NPT and Trench |
| Gate Charge |
200nC |
| Power - Max |
312W |
| Polarity/Channel Type |
N-CHANNEL |
| Switching Energy |
4.1mJ (on), 960μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
180ns |
| Height |
18.9mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA25N120ANTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-3P |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Current-Collector (Ic) (Max) |
40A |
| Max Power Dissipation |
310W |
| Mount |
Through Hole |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
1.2kV |
| Test Conditions |
600V, 25A, 10Ohm, 15V |
| Current Rating |
25A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 25A |
| Power Dissipation |
310W |
| Input Type |
Standard |
| Power - Max |
310W |
| Collector Emitter Voltage (VCEO) |
3.2V |
| Max Collector Current |
40A |
| Continuous Drain Current (ID) |
25A |
| Base Part Number |
FGA25N120A |
| Element Configuration |
Single |
| IGBT Type |
NPT |
| Gate Charge |
200nC |
| Current - Collector Pulsed (Icm) |
75A |
| Td (on/off) @ 25°C |
60ns/170ns |
| Switching Energy |
4.8mJ (on), 1mJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGA25N120FTD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Input Type |
Standard |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 25A, 15 Ω, 15V |
| Turn Off Delay Time |
210 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
313W |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Power - Max |
313W |
| Turn On Delay Time |
48 ns |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
50A |
| Reverse Recovery Time |
770 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 25A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
160nC |
| Current - Collector Pulsed (Icm) |
75A |
| Td (on/off) @ 25°C |
48ns/210ns |
| Switching Energy |
340μJ (on), 900μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGA25S125P
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Min Operating Temperature |
-55°C |
| Max Operating Temperature |
175°C |
| Number of Terminations |
3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Obsolete |
| Pbfree Code |
yes |
| Max Power Dissipation |
250W |
| Published |
2013 |
| Number of Elements |
1 |
| Collector-Emitter Breakdown Voltage |
1.25kV |
| Weight |
6.401g |
| Number of Pins |
3 |
| Package / Case |
TO-3P-3, SC-65-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 25A |
| Width |
5mm |
| Length |
15.8mm |
| Height |
20.1mm |
| Current - Collector Pulsed (Icm) |
75A |
| Gate Charge |
204nC |
| IGBT Type |
Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) |
1250V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Max Collector Current |
50A |
| Collector Emitter Voltage (VCEO) |
1.25kV |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Input Type |
Standard |
| Element Configuration |
Single |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGA3060ADF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
7 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 30A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
176W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
176W |
| Collector Emitter Voltage (VCEO) |
2.3V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
26 ns |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
37.4nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
12ns/42.4ns |
| Switching Energy |
960μJ (on), 165μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA30N60LSDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 6.8 Ω, 15V |
| Max Power Dissipation |
480W |
| Factory Lead Time |
7 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Gate Charge |
225nC |
| Current - Collector Pulsed (Icm) |
90A |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
35 ns |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
2870 ns |
| IGBT Type |
Trench Field Stop |
| Input Type |
Standard |
| Power - Max |
480W |
| Td (on/off) @ 25°C |
18ns/250ns |
| Switching Energy |
1.1mJ (on), 21mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Fall Time-Max (tf) |
2000ns |
| Height |
18.9mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA30N65SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 6 Ω, 15V |
| Max Power Dissipation |
300W |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2012 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Mount |
Through Hole |
| Factory Lead Time |
5 Weeks |
| IGBT Type |
Field Stop |
| Power Dissipation |
300W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
35ns |
| Turn On Time |
41 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
125 ns |
| Gate Charge |
87nC |
| Current - Collector Pulsed (Icm) |
90A |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
14ns/102ns |
| Switching Energy |
716μJ (on), 208μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
20.1mm |
| Length |
16.2mm |
| Width |
5mm |
| Radiation Hardening |
No |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA30S120P
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.3kV |
| Number of Elements |
1 |
| HTS Code |
8541.29.00.95 |
| Factory Lead Time |
15 Weeks |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-55°C~175°C TJ |
| Max Power Dissipation |
348W |
| Voltage - Collector Emitter Breakdown (Max) |
1300V |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
| Rise Time-Max |
490ns |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
348W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.3kV |
| Max Collector Current |
60A |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
150A |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
20.1mm |
| Length |
15.8mm |
| Width |
5mm |
| RoHS Status |
ROHS3 Compliant |