Showing 2593–2604 of 3680 results
ON Semiconductor FGA30T65SHD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
5 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 30A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
238W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
238W |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
31.8 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
54.7nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
14.4ns/52.8ns |
| Switching Energy |
598μJ (on), 167μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA40N65SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Max Power Dissipation |
349W |
| Turn Off Delay Time |
92 ns |
| Packaging |
Tube |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Contact Plating |
Tin |
| Factory Lead Time |
6 Weeks |
| Gate Charge |
119nC |
| Element Configuration |
Single |
| Input Type |
Standard |
| Turn On Delay Time |
12 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
42 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
| IGBT Type |
Field Stop |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
12ns/92ns |
| Rise Time-Max |
28ns |
| Switching Energy |
820μJ (on), 260μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
17ns |
| Height |
20.1mm |
| Length |
16.2mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
349W |
| Lead Free |
Lead Free |
ON Semiconductor FGA40S65SH
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
6 Weeks |
| HTS Code |
8541.29.00.95 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
268W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
268W |
| Collector Emitter Voltage (VCEO) |
1.81V |
| Max Collector Current |
80A |
| Vce(on) (Max) @ Vge, Ic |
1.81V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
73nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
19.2ns/68.8ns |
| Switching Energy |
194μJ (on), 388μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA40T65SHDF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
6 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
268W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
268W |
| Collector Emitter Voltage (VCEO) |
1.81V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
101 ns |
| Vce(on) (Max) @ Vge, Ic |
1.81V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
68nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
18ns/64ns |
| Switching Energy |
1.22mJ (on), 440μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA40T65UQDF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
14 Weeks |
| Max Power Dissipation |
231W |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
231W |
| Collector Emitter Voltage (VCEO) |
1.67V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
89 ns |
| Vce(on) (Max) @ Vge, Ic |
1.67V @ 15V, 40A |
| IGBT Type |
NPT |
| Gate Charge |
306nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
32ns/271ns |
| Switching Energy |
989μJ (on), 310μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA50N100BNTD2
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 60A, 10 Ω, 15V |
| Max Power Dissipation |
156W |
| Factory Lead Time |
8 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| IGBT Type |
NPT and Trench |
| Gate Charge |
257nC |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1kV |
| Max Collector Current |
50A |
| Reverse Recovery Time |
75 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1000V |
| Turn On Time |
102 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| Turn Off Time-Nom (toff) |
308 ns |
| Input Type |
Standard |
| Power - Max |
156W |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
34ns/243ns |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Fall Time-Max (tf) |
100ns |
| Height |
20.1mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA50N100BNTDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1kV |
| Number of Elements |
1 |
| Max Power Dissipation |
156W |
| Factory Lead Time |
5 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
760 ns |
| IGBT Type |
NPT and Trench |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1kV |
| Max Collector Current |
50A |
| Reverse Recovery Time |
1.5μs |
| Voltage - Collector Emitter Breakdown (Max) |
1000V |
| Turn On Time |
460 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| Power Dissipation |
156W |
| Input Type |
Standard |
| Gate Charge |
275nC |
| Current - Collector Pulsed (Icm) |
100A |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Fall Time-Max (tf) |
250ns |
| Height |
20.1mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA50N60LS
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Part Status |
Obsolete |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P |
| Current-Collector (Ic) (Max) |
100A |
| Test Conditions |
300V, 50A, 5.9Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Input Type |
Standard |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power - Max |
240W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 50A |
| Gate Charge |
167nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
54ns/146ns |
| Switching Energy |
1.1mJ (on), 3.2mJ (off) |
ON Semiconductor FGA50T65SHD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 50A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
319W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
319W |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
34.6 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
87nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
22.4ns/73.6ns |
| Switching Energy |
1.28mJ (on), 384μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA6065ADF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| ECCN Code |
EAR99 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Test Conditions |
400V, 60A, 6 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Max Collector Current |
120A |
| Reverse Recovery Time |
110 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
306W |
| Collector Emitter Voltage (VCEO) |
2.3V |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
306W |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 60A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
84nC |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
25.6ns/71ns |
| Switching Energy |
2.46mJ (on), 520μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA60N60UFDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 60A, 5 Ω, 15V |
| Max Power Dissipation |
298W |
| Factory Lead Time |
6 Weeks |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Gate Charge |
188nC |
| Current - Collector Pulsed (Icm) |
180A |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
120A |
| Reverse Recovery Time |
47 ns |
| Turn On Time |
83 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 60A |
| Turn Off Time-Nom (toff) |
204 ns |
| IGBT Type |
Field Stop |
| Input Type |
Standard |
| Power - Max |
298W |
| Td (on/off) @ 25°C |
23ns/130ns |
| Switching Energy |
1.81mJ (on), 810μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
80ns |
| Height |
20.1mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA60N65SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 60A, 3 Ω, 15V |
| Turn Off Delay Time |
104 ns |
| Max Power Dissipation |
600W |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Mount |
Through Hole |
| Factory Lead Time |
7 Weeks |
| Gate Charge |
189nC |
| Element Configuration |
Single |
| Turn On Delay Time |
18 ns |
| Power - Max |
600W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
120A |
| Reverse Recovery Time |
47 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 60A |
| IGBT Type |
Field Stop |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
18ns/104ns |
| Rise Time-Max |
70ns |
| Switching Energy |
1.54mJ (on), 450μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
68ns |
| Height |
20.1mm |
| Length |
15.8mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |