Showing 2605–2616 of 3680 results
ON Semiconductor FGA6530WDF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| ECCN Code |
EAR99 |
| Factory Lead Time |
6 Weeks |
| Packaging |
Tube |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Test Conditions |
400V, 30A, 6 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Max Collector Current |
60A |
| Reverse Recovery Time |
81 ns |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
176W |
| Collector Emitter Voltage (VCEO) |
2.2V |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
176W |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
37.4nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
12ns/42.4ns |
| Switching Energy |
960μJ (on), 162μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA6540WDF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Pbfree Code |
yes |
| JESD-609 Code |
e3 |
| Published |
2016 |
| Terminal Finish |
Tin (Sn) |
| Packaging |
Tube |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Collector-Emitter Breakdown Voltage |
650V |
| Weight |
6.401g |
| Package / Case |
TO-3P-3, SC-65-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Max Power Dissipation |
238W |
| Reverse Recovery Time |
101 ns |
| Switching Energy |
1.37mJ (on), 250μJ (off) |
| Td (on/off) @ 25°C |
16.8ns/54.4ns |
| Current - Collector Pulsed (Icm) |
120A |
| Gate Charge |
55.5nC |
| IGBT Type |
Trench Field Stop |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
| Max Collector Current |
80A |
| HTS Code |
8541.29.00.95 |
| Collector Emitter Voltage (VCEO) |
2.3V |
| Power - Max |
238W |
| Input Type |
Standard |
| Element Configuration |
Single |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA6560WDF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
6 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 60A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
306W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
306W |
| Collector Emitter Voltage (VCEO) |
2.3V |
| Max Collector Current |
120A |
| Reverse Recovery Time |
110 ns |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 60A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
84nC |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
25.6ns/71ns |
| Switching Energy |
2.46mJ (on), 520μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGA70N30TDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
300V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
201W |
| Element Configuration |
Single |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
1.5V |
| Reverse Recovery Time |
21ns |
| Vce(on) (Max) @ Vge, Ic |
1.5V @ 15V, 20A |
| IGBT Type |
Trench |
| Gate Charge |
125nC |
| Current - Collector Pulsed (Icm) |
160A |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGA70N33BTDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Collector-Emitter Breakdown Voltage |
330V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
149W |
| Element Configuration |
Single |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
330V |
| Reverse Recovery Time |
23 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 70A |
| IGBT Type |
Trench |
| Gate Charge |
49nC |
| Current - Collector Pulsed (Icm) |
220A |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGA90N33ATDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Terminal Finish |
MATTE TIN |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Weight |
6.401g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
330V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Number of Elements |
1 |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
36 Weeks |
| Reverse Recovery Time |
23 ns |
| Turn On Time |
60 ns |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
223W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
330V |
| Max Collector Current |
90A |
| HTS Code |
8541.29.00.95 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
360 ns |
| IGBT Type |
Trench |
| Gate Charge |
95nC |
| Current - Collector Pulsed (Icm) |
330A |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Max Power Dissipation |
223W |
| Lead Free |
Lead Free |
ON Semiconductor FGAF20N60SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.962g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
75W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
7 Weeks |
| IGBT Type |
Field Stop |
| Case Connection |
ISOLATED |
| Power - Max |
75W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
26.7 ns |
| Turn On Time |
31 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
109 ns |
| Gate Charge |
64nC |
| Current - Collector Pulsed (Icm) |
60A |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
12ns/91ns |
| Switching Energy |
452μJ (on), 141μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
27ns |
| Height |
26.7mm |
| Length |
15.7mm |
| Width |
3.2mm |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
ON Semiconductor FGAF30S65AQ
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Power - Max |
83 W |
| Package / Case |
TO-3P-3 Full Pack |
| Supplier Device Package |
TO-3PF-3 |
| Mfr |
onsemi |
| Package |
Tube |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Input Type |
Standard |
| Mounting Type |
Through Hole |
| Current - Collector (Ic) (Max) |
60 A |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Test Condition |
400V, 15A, 13Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
58 nC |
| Current - Collector Pulsed (Icm) |
90 A |
| Td (on/off) @ 25°C |
18ns/92ns |
| Switching Energy |
515µJ (on), 140µJ (off) |
| Reverse Recovery Time (trr) |
267 ns |
ON Semiconductor FGAF40N60SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.962g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
115W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| IGBT Type |
Field Stop |
| Case Connection |
ISOLATED |
| Power - Max |
115W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
36 ns |
| Turn On Time |
37 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
132 ns |
| Gate Charge |
119nC |
| Current - Collector Pulsed (Icm) |
120A |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
12ns/92ns |
| Switching Energy |
870μJ (on), 260μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
17ns |
| Height |
26.7mm |
| Length |
15.7mm |
| Width |
3.2mm |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
ON Semiconductor FGAF40N60UFDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.962g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
300V, 20A, 10 Ω, 15V |
| Max Power Dissipation |
100W |
| Factory Lead Time |
36 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
40A |
| Turn Off Time-Nom (toff) |
190 ns |
| Gate Charge |
77nC |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
95 ns |
| Turn On Time |
67 ns |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 20A |
| Element Configuration |
Single |
| Power Dissipation |
100W |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
15ns/65ns |
| Switching Energy |
470μJ (on), 130μJ (off) |
| Height |
26.5mm |
| Length |
15.5mm |
| Width |
5.5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGAF40N60UFTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Number of Pins |
3 |
| Weight |
6.962g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
300V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
100W |
| Current Rating |
40A |
| Mount |
Through Hole |
| Factory Lead Time |
8 Weeks |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
15ns/65ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Continuous Drain Current (ID) |
40A |
| Drain to Source Breakdown Voltage |
600V |
| Turn On Time |
67 ns |
| Vce(on) (Max) @ Vge, Ic |
3V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
190 ns |
| Gate Charge |
77nC |
| Case Connection |
ISOLATED |
| Power Dissipation |
100W |
| Switching Energy |
470μJ (on), 130μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
250ns |
| Height |
26.5mm |
| Length |
15.5mm |
| Width |
5.5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
ON Semiconductor FGAF40S65AQ
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3 Full Pack |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 10A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
18 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
compliant |
| Input Type |
Standard |
| Power - Max |
94W |
| Reverse Recovery Time |
274ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
75nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
17.8ns/81.6ns |
| Switching Energy |
132μJ (on), 62μJ (off) |