Showing 2617–2628 of 3680 results
ON Semiconductor FGB20N60SF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Published |
2010 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
208W |
| Terminal Form |
GULL WING |
| Base Part Number |
FGB20N60 |
| Mount |
Surface Mount |
| Factory Lead Time |
4 Weeks |
| Gate Charge |
65nC |
| Current - Collector Pulsed (Icm) |
60A |
| Power - Max |
208W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Max Breakdown Voltage |
600V |
| Turn On Time |
28 ns |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
123 ns |
| IGBT Type |
Field Stop |
| Case Connection |
COLLECTOR |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
13ns/90ns |
| Switching Energy |
370μJ (on), 160μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
48ns |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGB20N60SFD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
5 Weeks |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
208W |
| Terminal Form |
GULL WING |
| Base Part Number |
FGB20N60 |
| Published |
2013 |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
123 ns |
| IGBT Type |
Field Stop |
| Input Type |
Standard |
| Power - Max |
208W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
34 ns |
| Max Breakdown Voltage |
600V |
| Turn On Time |
28 ns |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 20A |
| Power Dissipation |
83W |
| Case Connection |
COLLECTOR |
| Gate Charge |
65nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
13ns/90ns |
| Switching Energy |
370μJ (on), 160μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
48ns |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGB20N60SFD-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
7 Weeks |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
208W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reverse Recovery Time |
111 ns |
| Max Breakdown Voltage |
600V |
| Rise Time-Max |
21ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
208W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Base Part Number |
FGB20N60 |
| JESD-30 Code |
R-PSSO-G2 |
| Turn On Time |
28 ns |
| Vce(on) (Max) @ Vge, Ic |
2.85V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
123 ns |
| IGBT Type |
Field Stop |
| Gate Charge |
63nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
10ns/90ns |
| Switching Energy |
310μJ (on), 130μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGB20N6S2
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263AB |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
28A |
| Test Conditions |
390V, 7A, 25Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
125W |
| Current Rating |
28A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
125W |
| Rise Time |
4.5ns |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
28A |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 7A |
| Gate Charge |
30nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
7.7ns/87ns |
| Switching Energy |
25μJ (on), 58μJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGB3040CS
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Number of Pins |
6 |
| Weight |
1.312g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
430V |
| Number of Elements |
1 |
| Test Conditions |
300V, 1k Ω, 5V |
| Turn Off Delay Time |
4.7 μs |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Operating Temperature |
-40°C~175°C TJ |
| Series |
EcoSPARK® |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
6 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
150W |
| Mount |
Surface Mount |
| Factory Lead Time |
7 Weeks |
| Turn On Time |
2100 ns |
| Vce(on) (Max) @ Vge, Ic |
1.6V @ 4V, 6A |
| Element Configuration |
Single |
| Power Dissipation |
150W |
| Input Type |
Logic |
| Turn On Delay Time |
600 ns |
| Clamping Voltage |
400V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.85V |
| Max Collector Current |
21A |
| Max Breakdown Voltage |
430V |
| Number of Outputs |
1 |
| Base Part Number |
FGB3040 |
| Turn Off Time-Nom (toff) |
7300 ns |
| Gate Charge |
15nC |
| Td (on/off) @ 25°C |
-/4.7μs |
| Gate-Emitter Thr Voltage-Max |
2.2V |
| Height |
4.7mm |
| Length |
10.1mm |
| Width |
9.4mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Rise Time-Max |
7000ns |
| Lead Free |
Lead Free |
ON Semiconductor FGB3040G2-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2006 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Collector-Emitter Breakdown Voltage |
400V |
| Operating Temperature |
-55°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
4 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
150W |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Max Collector Current |
41A |
| Max Breakdown Voltage |
400V |
| Element Configuration |
Single |
| Input Type |
Logic |
| Power - Max |
150W |
| Clamping Voltage |
400V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.5V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time-Max |
7000ns |
| Vce(on) (Max) @ Vge, Ic |
1.25V @ 4V, 6A |
| Gate Charge |
21nC |
| Td (on/off) @ 25°C |
900ns/4.8μs |
| Gate-Emitter Voltage-Max |
12V |
| Gate-Emitter Thr Voltage-Max |
2.2V |
| Fall Time-Max (tf) |
15000ns |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGB3040G2-F085C
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
6 Weeks |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
41A |
| Test Conditions |
5V, 470 Ω |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| Input Type |
Logic |
| Power - Max |
150W |
| Reverse Recovery Time |
1.9μs |
| Voltage - Collector Emitter Breakdown (Max) |
400V |
| Vce(on) (Max) @ Vge, Ic |
1.25V @ 4V, 6A |
| Gate Charge |
21nC |
| Td (on/off) @ 25°C |
900ns/4.8μs |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGB30N6S2D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Supplier Device Package |
TO-263AB |
| Current-Collector (Ic) (Max) |
45A |
| Test Conditions |
390V, 12A, 10Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2001 |
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Input Type |
Standard |
| Base Part Number |
FGB30N6 |
| Power - Max |
167W |
| Reverse Recovery Time |
46ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
| Gate Charge |
23nC |
| Current - Collector Pulsed (Icm) |
108A |
| Td (on/off) @ 25°C |
6ns/40ns |
| Switching Energy |
55μJ (on), 100μJ (off) |
ON Semiconductor FGB30N6S2T
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Base Part Number |
FGB30N6 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
167W |
| Current Rating |
45A |
| Mount |
Surface Mount |
| Power Dissipation |
167W |
| Element Configuration |
Single |
| Input Type |
Standard |
| Rise Time |
10ns |
| Collector Emitter Voltage (VCEO) |
2.5V |
| Max Collector Current |
45A |
| Max Breakdown Voltage |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
| Gate Charge |
23nC |
| Current - Collector Pulsed (Icm) |
108A |
| Td (on/off) @ 25°C |
6ns/40ns |
| Switching Energy |
55μJ (on), 110μJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGB3245G2-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Collector-Emitter Breakdown Voltage |
450V |
| Operating Temperature |
-40°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
39 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
150W |
| Packaging |
Tape & Reel (TR) |
| Reach Compliance Code |
not_compliant |
| Max Collector Current |
23A |
| Max Breakdown Voltage |
450V |
| Element Configuration |
Single |
| Input Type |
Logic |
| Power - Max |
150W |
| Clamping Voltage |
450V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time-Max |
7000ns |
| Vce(on) (Max) @ Vge, Ic |
1.25V @ 4V, 6A |
| Gate Charge |
23nC |
| Td (on/off) @ 25°C |
900ns/5.4μs |
| Gate-Emitter Voltage-Max |
12V |
| Gate-Emitter Thr Voltage-Max |
2.2V |
| Fall Time-Max (tf) |
15000ns |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGB40N60SM
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Rise Time-Max |
28ns |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Published |
2013 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
349W |
| Terminal Form |
GULL WING |
| Base Part Number |
FGB40N60 |
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Factory Lead Time |
4 Weeks |
| Gate Charge |
119nC |
| Current - Collector Pulsed (Icm) |
120A |
| Power - Max |
349W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Max Breakdown Voltage |
600V |
| Turn On Time |
37 ns |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
132 ns |
| IGBT Type |
Field Stop |
| Case Connection |
COLLECTOR |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
12ns/92ns |
| Switching Energy |
870μJ (on), 260μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
17ns |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
ON Semiconductor FGB40T65SPD-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Peak Reflow Temperature (Cel) |
260 |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
80A |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
4 Weeks |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
49 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
267W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
34ns |
| Reference Standard |
AEC-Q101 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
51 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
36nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
18ns/35ns |
| Switching Energy |
970μJ (on), 280μJ (off) |
| JESD-30 Code |
R-PSSO-G2 |
| RoHS Status |
RoHS Compliant |