Showing 2653–2664 of 3680 results
Transistors - IGBTs - Single
ON Semiconductor FGH20N60SFDTU-F085
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Active |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.39g |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 20A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2016 |
Series |
Automotive, AEC-Q101 |
Pbfree Code |
yes |
Factory Lead Time |
12 Weeks |
Max Power Dissipation |
165W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Type |
Standard |
Power - Max |
165W |
Collector Emitter Voltage (VCEO) |
2.8V |
Max Collector Current |
40A |
Reverse Recovery Time |
40 ns |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 20A |
IGBT Type |
Field Stop |
Gate Charge |
66nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
13ns/90ns |
Switching Energy |
430μJ (on), 130μJ (off) |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH20N60UFDTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2013 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
87 ns |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
165W |
Element Configuration |
Single |
Mount |
Through Hole |
Factory Lead Time |
4 Weeks |
Gate Charge |
63nC |
Turn On Delay Time |
13 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
34 ns |
JEDEC-95 Code |
TO-247AB |
Turn On Time |
29 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 20A |
Turn Off Time-Nom (toff) |
155 ns |
IGBT Type |
Field Stop |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
13ns/87ns |
Input Type |
Standard |
Switching Energy |
380μJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
64ns |
Height |
20.6mm |
Length |
15.6mm |
Width |
4.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power - Max |
165W |
Lead Free |
Lead Free |
ON Semiconductor FGH25N120FTDS
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 25A, 10 Ω, 15V |
Element Configuration |
Single |
Factory Lead Time |
5 Weeks |
Published |
2016 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
313W |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
299 ns |
IGBT Type |
Trench Field Stop |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
Reverse Recovery Time |
535 ns |
JEDEC-95 Code |
TO-247AB |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
63 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 25A |
Input Type |
Standard |
Power - Max |
313W |
Gate Charge |
169nC |
Current - Collector Pulsed (Icm) |
75A |
Td (on/off) @ 25°C |
26ns/151ns |
Switching Energy |
1.42mJ (on), 1.16mJ (off) |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
7.5V |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH25T120SMD-F155
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Peak Reflow Temperature (Cel) |
260 |
Factory Lead Time |
5 Weeks |
Packaging |
Tube |
Published |
2014 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
TIN |
Max Power Dissipation |
428W |
Test Conditions |
600V, 25A, 23 Ω, 15V |
Element Configuration |
Single |
Turn On Time |
88 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 25A |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
Reverse Recovery Time |
60ns |
JEDEC-95 Code |
TO-247AB |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Power Dissipation |
428W |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
584 ns |
IGBT Type |
Trench Field Stop |
Gate Charge |
225nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
40ns/490ns |
Switching Energy |
1.74mJ (on), 560μJ (off) |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
7.5V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH30N120FTDTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Max Operating Temperature |
150°C |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-247-3 |
Weight |
6.390011g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Current-Collector (Ic) (Max) |
60A |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2008 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Through Hole |
Max Power Dissipation |
339W |
Min Operating Temperature |
-55°C |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
339W |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
60A |
Reverse Recovery Time |
730 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
IGBT Type |
Trench Field Stop |
Gate Charge |
208nC |
Current - Collector Pulsed (Icm) |
90A |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
ON Semiconductor FGH30N6S2
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
45A |
Test Conditions |
390V, 12A, 10Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2001 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
600V |
Max Power Dissipation |
167W |
Current Rating |
45A |
Element Configuration |
Single |
Power Dissipation |
167W |
Input Type |
Standard |
Power - Max |
167W |
Rise Time |
10ns |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
45A |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
Gate Charge |
23nC |
Current - Collector Pulsed (Icm) |
108A |
Td (on/off) @ 25°C |
6ns/40ns |
Switching Energy |
55μJ (on), 100μJ (off) |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor FGH30N6S2D
In stock
Manufacturer |
ON Semiconductor |
---|---|
Current Rating |
45A |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
45A |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Test Conditions |
390V, 12A, 10Ohm, 15V |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
600V |
Max Power Dissipation |
167W |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
Input Type |
Standard |
Power - Max |
167W |
Rise Time |
17ns |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
45A |
Reverse Recovery Time |
46 ns |
Element Configuration |
Single |
Polarity |
NPN |
Gate Charge |
23nC |
Current - Collector Pulsed (Icm) |
108A |
Td (on/off) @ 25°C |
6ns/40ns |
Switching Energy |
55μJ (on), 100μJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Power Dissipation |
167W |
Lead Free |
Lead Free |
ON Semiconductor FGH30S130P
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2014 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.3kV |
Number of Elements |
1 |
Operating Temperature |
-55°C~175°C TJ |
Reach Compliance Code |
not_compliant |
Factory Lead Time |
12 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
500W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
Turn Off Time-Nom (toff) |
905 ns |
Input Type |
Standard |
Power - Max |
500W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.3kV |
Max Collector Current |
60A |
JEDEC-95 Code |
TO-247AB |
Voltage - Collector Emitter Breakdown (Max) |
1300V |
Turn On Time |
413 ns |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
IGBT Type |
Trench Field Stop |
Gate Charge |
78nC |
Current - Collector Pulsed (Icm) |
90A |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
7.5V |
Fall Time-Max (tf) |
210ns |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor FGH40N120ANTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Max Power Dissipation |
417W |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 40A, 5 Ω, 15V |
Published |
2011 |
JESD-609 Code |
e3 |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Mount |
Through Hole |
Factory Lead Time |
4 Weeks |
Td (on/off) @ 25°C |
15ns/110ns |
Switching Energy |
2.3mJ (on), 1.1mJ (off) |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
64A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
IGBT Type |
NPT |
Gate Charge |
220nC |
Current - Collector Pulsed (Icm) |
160A |
Input Type |
Standard |
Element Configuration |
Single |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
7.5V |
Fall Time-Max (tf) |
80ns |
Height |
20.6mm |
Length |
15.6mm |
Width |
4.7mm |
Radiation Hardening |
No |
Polarity/Channel Type |
N-CHANNEL |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40N60SFDTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2004 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Turn Off Delay Time |
115 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
290W |
Base Part Number |
FGH40N60 |
Mount |
Through Hole |
Factory Lead Time |
10 Weeks |
IGBT Type |
Field Stop |
Input Type |
Standard |
Power - Max |
290W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
45 ns |
JEDEC-95 Code |
TO-247AB |
Turn On Time |
108 ns |
Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 40A |
Turn Off Time-Nom (toff) |
170 ns |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
120A |
Case Connection |
COLLECTOR |
Td (on/off) @ 25°C |
25ns/115ns |
Switching Energy |
1.13mJ (on), 310μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
90ns |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
25 ns |
Lead Free |
Lead Free |
ON Semiconductor FGH40N60SFDTU-F085
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Active |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2016 |
Series |
Automotive, AEC-Q101 |
Pbfree Code |
yes |
Factory Lead Time |
8 Weeks |
Max Power Dissipation |
290W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
290W |
Collector Emitter Voltage (VCEO) |
2.9V |
Max Collector Current |
80A |
Reverse Recovery Time |
68 ns |
Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 40A |
IGBT Type |
Field Stop |
Gate Charge |
121nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
21ns/138ns |
Switching Energy |
1.23mJ (on), 380μJ (off) |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40N60SMD
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 40A, 6 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Element Configuration |
Single |
Published |
2013 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
349W |
Base Part Number |
FGH40N60 |
Rise Time-Max |
28ns |
Mount |
Through Hole |
Factory Lead Time |
5 Weeks |
Gate Charge |
119nC |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
36 ns |
JEDEC-95 Code |
TO-247AB |
Turn On Time |
37 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
Turn Off Time-Nom (toff) |
132 ns |
IGBT Type |
Field Stop |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
12ns/92ns |
Case Connection |
COLLECTOR |
Switching Energy |
870μJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
17ns |
Height |
20.6mm |
Length |
15.6mm |
Width |
4.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power - Max |
349W |
Lead Free |
Lead Free |