Showing 2653–2664 of 3680 results

Transistors - IGBTs - Single

ON Semiconductor FGH20N60SFDTU-F085

In stock

SKU: FGH20N60SFDTU-F085-9
Manufacturer

ON Semiconductor

Part Status

Active

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Weight

6.39g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2016

Series

Automotive, AEC-Q101

Pbfree Code

yes

Factory Lead Time

12 Weeks

Max Power Dissipation

165W

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Power - Max

165W

Collector Emitter Voltage (VCEO)

2.8V

Max Collector Current

40A

Reverse Recovery Time

40 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 20A

IGBT Type

Field Stop

Gate Charge

66nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

13ns/90ns

Switching Energy

430μJ (on), 130μJ (off)

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH20N60UFDTU

In stock

SKU: FGH20N60UFDTU-9
Manufacturer

ON Semiconductor

Published

2013

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 20A, 10 Ω, 15V

Turn Off Delay Time

87 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Max Power Dissipation

165W

Element Configuration

Single

Mount

Through Hole

Factory Lead Time

4 Weeks

Gate Charge

63nC

Turn On Delay Time

13 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

34 ns

JEDEC-95 Code

TO-247AB

Turn On Time

29 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 20A

Turn Off Time-Nom (toff)

155 ns

IGBT Type

Field Stop

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

13ns/87ns

Input Type

Standard

Switching Energy

380μJ (on), 260μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

64ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power - Max

165W

Lead Free

Lead Free

ON Semiconductor FGH25N120FTDS

In stock

SKU: FGH25N120FTDS-9
Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 25A, 10 Ω, 15V

Element Configuration

Single

Factory Lead Time

5 Weeks

Published

2016

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

313W

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

299 ns

IGBT Type

Trench Field Stop

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

535 ns

JEDEC-95 Code

TO-247AB

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

63 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 25A

Input Type

Standard

Power - Max

313W

Gate Charge

169nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

26ns/151ns

Switching Energy

1.42mJ (on), 1.16mJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH25T120SMD-F155

In stock

SKU: FGH25T120SMD-F155-9
Manufacturer

ON Semiconductor

Operating Temperature

-55°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Peak Reflow Temperature (Cel)

260

Factory Lead Time

5 Weeks

Packaging

Tube

Published

2014

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

TIN

Max Power Dissipation

428W

Test Conditions

600V, 25A, 23 Ω, 15V

Element Configuration

Single

Turn On Time

88 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

60ns

JEDEC-95 Code

TO-247AB

Voltage - Collector Emitter Breakdown (Max)

1200V

Power Dissipation

428W

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

584 ns

IGBT Type

Trench Field Stop

Gate Charge

225nC

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

40ns/490ns

Switching Energy

1.74mJ (on), 560μJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH30N120FTDTU

In stock

SKU: FGH30N120FTDTU-9
Manufacturer

ON Semiconductor

Max Operating Temperature

150°C

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247-3

Weight

6.390011g

Collector-Emitter Breakdown Voltage

1.2kV

Current-Collector (Ic) (Max)

60A

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2008

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mount

Through Hole

Max Power Dissipation

339W

Min Operating Temperature

-55°C

Element Configuration

Single

Input Type

Standard

Power - Max

339W

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

60A

Reverse Recovery Time

730 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

208nC

Current - Collector Pulsed (Icm)

90A

Radiation Hardening

No

RoHS Status

RoHS Compliant

ON Semiconductor FGH30N6S2

In stock

SKU: FGH30N6S2-9
Manufacturer

ON Semiconductor

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

45A

Test Conditions

390V, 12A, 10Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

600V

Max Power Dissipation

167W

Current Rating

45A

Element Configuration

Single

Power Dissipation

167W

Input Type

Standard

Power - Max

167W

Rise Time

10ns

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

45A

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Gate Charge

23nC

Current - Collector Pulsed (Icm)

108A

Td (on/off) @ 25°C

6ns/40ns

Switching Energy

55μJ (on), 100μJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor FGH30N6S2D

In stock

SKU: FGH30N6S2D-9
Manufacturer

ON Semiconductor

Current Rating

45A

Package / Case

TO-247-3

Number of Pins

3

Supplier Device Package

TO-247-3

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

45A

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Test Conditions

390V, 12A, 10Ohm, 15V

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

600V

Max Power Dissipation

167W

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Input Type

Standard

Power - Max

167W

Rise Time

17ns

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

45A

Reverse Recovery Time

46 ns

Element Configuration

Single

Polarity

NPN

Gate Charge

23nC

Current - Collector Pulsed (Icm)

108A

Td (on/off) @ 25°C

6ns/40ns

Switching Energy

55μJ (on), 100μJ (off)

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Power Dissipation

167W

Lead Free

Lead Free

ON Semiconductor FGH30S130P

In stock

SKU: FGH30S130P-9
Manufacturer

ON Semiconductor

Published

2014

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.3kV

Number of Elements

1

Operating Temperature

-55°C~175°C TJ

Reach Compliance Code

not_compliant

Factory Lead Time

12 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

500W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 30A

Turn Off Time-Nom (toff)

905 ns

Input Type

Standard

Power - Max

500W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.3kV

Max Collector Current

60A

JEDEC-95 Code

TO-247AB

Voltage - Collector Emitter Breakdown (Max)

1300V

Turn On Time

413 ns

Element Configuration

Single

Case Connection

COLLECTOR

IGBT Type

Trench Field Stop

Gate Charge

78nC

Current - Collector Pulsed (Icm)

90A

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Fall Time-Max (tf)

210ns

Height

20.82mm

Length

15.87mm

Width

4.82mm

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor FGH40N120ANTU

In stock

SKU: FGH40N120ANTU-9
Manufacturer

ON Semiconductor

Max Power Dissipation

417W

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 40A, 5 Ω, 15V

Published

2011

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mount

Through Hole

Factory Lead Time

4 Weeks

Td (on/off) @ 25°C

15ns/110ns

Switching Energy

2.3mJ (on), 1.1mJ (off)

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

64A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

3.2V @ 15V, 40A

IGBT Type

NPT

Gate Charge

220nC

Current - Collector Pulsed (Icm)

160A

Input Type

Standard

Element Configuration

Single

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Fall Time-Max (tf)

80ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

Polarity/Channel Type

N-CHANNEL

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH40N60SFDTU

In stock

SKU: FGH40N60SFDTU-9
Manufacturer

ON Semiconductor

Published

2004

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 40A, 10 Ω, 15V

Turn Off Delay Time

115 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Max Power Dissipation

290W

Base Part Number

FGH40N60

Mount

Through Hole

Factory Lead Time

10 Weeks

IGBT Type

Field Stop

Input Type

Standard

Power - Max

290W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

45 ns

JEDEC-95 Code

TO-247AB

Turn On Time

108 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 40A

Turn Off Time-Nom (toff)

170 ns

Gate Charge

120nC

Current - Collector Pulsed (Icm)

120A

Case Connection

COLLECTOR

Td (on/off) @ 25°C

25ns/115ns

Switching Energy

1.13mJ (on), 310μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

90ns

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Turn On Delay Time

25 ns

Lead Free

Lead Free

ON Semiconductor FGH40N60SFDTU-F085

In stock

SKU: FGH40N60SFDTU-F085-9
Manufacturer

ON Semiconductor

Part Status

Active

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2016

Series

Automotive, AEC-Q101

Pbfree Code

yes

Factory Lead Time

8 Weeks

Max Power Dissipation

290W

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Element Configuration

Single

Input Type

Standard

Power - Max

290W

Collector Emitter Voltage (VCEO)

2.9V

Max Collector Current

80A

Reverse Recovery Time

68 ns

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 40A

IGBT Type

Field Stop

Gate Charge

121nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

21ns/138ns

Switching Energy

1.23mJ (on), 380μJ (off)

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH40N60SMD

In stock

SKU: FGH40N60SMD-9
Manufacturer

ON Semiconductor

JESD-609 Code

e3

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 40A, 6 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Element Configuration

Single

Published

2013

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Max Power Dissipation

349W

Base Part Number

FGH40N60

Rise Time-Max

28ns

Mount

Through Hole

Factory Lead Time

5 Weeks

Gate Charge

119nC

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

36 ns

JEDEC-95 Code

TO-247AB

Turn On Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Turn Off Time-Nom (toff)

132 ns

IGBT Type

Field Stop

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

12ns/92ns

Case Connection

COLLECTOR

Switching Energy

870μJ (on), 260μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

17ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power - Max

349W

Lead Free

Lead Free