Showing 2665–2676 of 3680 results
Transistors - IGBTs - Single
ON Semiconductor FGH40N60SMD-F085
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 40A, 6 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
6 Weeks |
Published |
2016 |
Series |
Automotive, AEC-Q101 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
349W |
Operating Temperature |
-55°C~175°C TJ |
Reach Compliance Code |
not_compliant |
Turn On Time |
43.7 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
349W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
47 ns |
JEDEC-95 Code |
TO-247AB |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
172.5 ns |
IGBT Type |
Field Stop |
Gate Charge |
180nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
18ns/110ns |
Switching Energy |
920μJ (on), 300μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
81ns |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40N60SMDF
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 40A, 6 Ω, 15V |
Turn Off Delay Time |
92 ns |
Element Configuration |
Single |
Factory Lead Time |
4 Weeks |
Published |
2013 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
349W |
Base Part Number |
FGH40N60 |
Rise Time-Max |
28ns |
Operating Temperature |
-55°C~175°C TJ |
Power Dissipation |
349W |
Gate Charge |
119nC |
Current - Collector Pulsed (Icm) |
120A |
Turn On Delay Time |
12 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
90ns |
JEDEC-95 Code |
TO-247AB |
Turn On Time |
37 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
Turn Off Time-Nom (toff) |
132 ns |
IGBT Type |
Field Stop |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Td (on/off) @ 25°C |
12ns/92ns |
Switching Energy |
1.3mJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
17ns |
Height |
20.6mm |
Length |
15.6mm |
Width |
4.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor FGH40N60UFDTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2009 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Turn Off Delay Time |
112 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
290W |
Base Part Number |
FGH40N60 |
Packaging |
Tube |
Case Connection |
COLLECTOR |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
120A |
Power - Max |
290W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
45 ns |
JEDEC-95 Code |
TO-247AB |
Turn On Time |
110 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
Turn Off Time-Nom (toff) |
190 ns |
IGBT Type |
Field Stop |
Input Type |
Standard |
Turn On Delay Time |
24 ns |
Td (on/off) @ 25°C |
24ns/112ns |
Switching Energy |
1.19mJ (on), 460μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
100ns |
Height |
20.6mm |
Length |
15.6mm |
Width |
4.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor FGH40N65UFDTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Case Connection |
COLLECTOR |
Factory Lead Time |
12 Weeks |
Published |
2008 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
290W |
Element Configuration |
Single |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
120A |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
80A |
Reverse Recovery Time |
45 ns |
JEDEC-95 Code |
TO-247AB |
Turn On Time |
69 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
Turn Off Time-Nom (toff) |
160 ns |
IGBT Type |
Field Stop |
Power - Max |
290W |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
24ns/112ns |
Switching Energy |
1.19mJ (on), 460μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
60ns |
Height |
20.6mm |
Length |
15.6mm |
Width |
4.7mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40N65UFDTU-F085
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Active |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2016 |
Series |
Automotive, AEC-Q101 |
Pbfree Code |
yes |
Factory Lead Time |
12 Weeks |
Max Power Dissipation |
290W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
290W |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
80A |
Reverse Recovery Time |
65 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
IGBT Type |
Field Stop |
Gate Charge |
119nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
23ns/126ns |
Switching Energy |
1.28mJ (on), 500μJ (off) |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40N6S2D
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-247-3 |
Supplier Device Package |
TO-247-3 |
Current-Collector (Ic) (Max) |
75A |
Test Conditions |
390V, 20A, 3Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2002 |
Mounting Type |
Through Hole |
Input Type |
Standard |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power - Max |
290W |
Reverse Recovery Time |
48ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
Gate Charge |
35nC |
Current - Collector Pulsed (Icm) |
180A |
Td (on/off) @ 25°C |
8ns/35ns |
Switching Energy |
115μJ (on), 195μJ (off) |
ON Semiconductor FGH40T100SMD
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2012 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Element Configuration |
Single |
Factory Lead Time |
4 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Max Power Dissipation |
333W |
Rise Time-Max |
64ns |
Packaging |
Tube |
Power Dissipation |
333W |
IGBT Type |
Trench Field Stop |
Gate Charge |
265nC |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1kV |
Max Collector Current |
80A |
Reverse Recovery Time |
78 ns |
JEDEC-95 Code |
TO-247AB |
Voltage - Collector Emitter Breakdown (Max) |
1000V |
Turn On Time |
76 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
Turn Off Time-Nom (toff) |
305 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
29ns/285ns |
Switching Energy |
2.35mJ (on), 1.15mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
20.82mm |
Length |
15.87mm |
Width |
4.82mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor FGH40T100SMD-F155
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
9 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
1kV |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2014 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
333W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
333W |
Collector Emitter Voltage (VCEO) |
2.3V |
Max Collector Current |
80A |
Reverse Recovery Time |
78 ns |
Voltage - Collector Emitter Breakdown (Max) |
1000V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
398nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
29ns/285ns |
Switching Energy |
2.35mJ (on), 1.15mJ (off) |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40T120SMD-F155
In stock
Manufacturer |
ON Semiconductor |
---|---|
Turn Off Delay Time |
475 ns |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Power Dissipation |
555W |
Factory Lead Time |
5 Weeks |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2013 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
555W |
Element Configuration |
Single |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Input Type |
Standard |
IGBT Type |
Trench Field Stop |
Gate Charge |
370nC |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
80A |
Reverse Recovery Time |
65 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
Max Junction Temperature (Tj) |
175°C |
Continuous Collector Current |
80A |
Turn On Delay Time |
40 ns |
Polarity/Channel Type |
N-CHANNEL |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
40ns/475ns |
Switching Energy |
2.7mJ (on), 1.1mJ (off) |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
7.5V |
Height |
24.75mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor FGH40T120SMDL4
In stock
Manufacturer |
ON Semiconductor |
---|---|
Terminal Finish |
Tin (Sn) |
Mounting Type |
Through Hole |
Package / Case |
TO-247-4 |
Number of Pins |
3 |
Weight |
6.289g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Published |
2016 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Mount |
Through Hole |
Factory Lead Time |
6 Weeks |
Reverse Recovery Time |
65 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
555W |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
80A |
Max Power Dissipation |
555W |
HTS Code |
8541.29.00.95 |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
370nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
44ns/464ns |
Switching Energy |
2.24mJ (on), 1.02mJ (off) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40T65SH-F155
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
6 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 40A, 6 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2015 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
268W |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
268W |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
80A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
72.2nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
19.2ns/65.6ns |
Switching Energy |
1.01mJ (on), 297μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor FGH40T65SHDF-F155
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
6 Weeks |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.39g |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 40A, 6 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2016 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Power Dissipation |
268W |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
268W |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
80A |
Reverse Recovery Time |
101 ns |
Vce(on) (Max) @ Vge, Ic |
1.81V @ 15V, 40A |
IGBT Type |
Field Stop |
Gate Charge |
68nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
18ns/64ns |
Switching Energy |
1.22mJ (on), 440μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
7.5V |
RoHS Status |
ROHS3 Compliant |