Showing 2665–2676 of 3680 results

Transistors - IGBTs - Single

ON Semiconductor FGH40N60SMD-F085

In stock

SKU: FGH40N60SMD-F085-9
Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 40A, 6 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

6 Weeks

Published

2016

Series

Automotive, AEC-Q101

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Max Power Dissipation

349W

Operating Temperature

-55°C~175°C TJ

Reach Compliance Code

not_compliant

Turn On Time

43.7 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

349W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

47 ns

JEDEC-95 Code

TO-247AB

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Turn Off Time-Nom (toff)

172.5 ns

IGBT Type

Field Stop

Gate Charge

180nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

18ns/110ns

Switching Energy

920μJ (on), 300μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

81ns

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH40N60SMDF

In stock

SKU: FGH40N60SMDF-9
Manufacturer

ON Semiconductor

Packaging

Tube

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 40A, 6 Ω, 15V

Turn Off Delay Time

92 ns

Element Configuration

Single

Factory Lead Time

4 Weeks

Published

2013

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

HTS Code

8541.29.00.95

Max Power Dissipation

349W

Base Part Number

FGH40N60

Rise Time-Max

28ns

Operating Temperature

-55°C~175°C TJ

Power Dissipation

349W

Gate Charge

119nC

Current - Collector Pulsed (Icm)

120A

Turn On Delay Time

12 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

90ns

JEDEC-95 Code

TO-247AB

Turn On Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 40A

Turn Off Time-Nom (toff)

132 ns

IGBT Type

Field Stop

Case Connection

COLLECTOR

Input Type

Standard

Td (on/off) @ 25°C

12ns/92ns

Switching Energy

1.3mJ (on), 260μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

17ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor FGH40N60UFDTU

In stock

SKU: FGH40N60UFDTU-9
Manufacturer

ON Semiconductor

Published

2009

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 40A, 10 Ω, 15V

Turn Off Delay Time

112 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Factory Lead Time

8 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Max Power Dissipation

290W

Base Part Number

FGH40N60

Packaging

Tube

Case Connection

COLLECTOR

Gate Charge

120nC

Current - Collector Pulsed (Icm)

120A

Power - Max

290W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

45 ns

JEDEC-95 Code

TO-247AB

Turn On Time

110 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Turn Off Time-Nom (toff)

190 ns

IGBT Type

Field Stop

Input Type

Standard

Turn On Delay Time

24 ns

Td (on/off) @ 25°C

24ns/112ns

Switching Energy

1.19mJ (on), 460μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

100ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor FGH40N65UFDTU

In stock

SKU: FGH40N65UFDTU-9
Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 40A, 10 Ω, 15V

Case Connection

COLLECTOR

Factory Lead Time

12 Weeks

Published

2008

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

HTS Code

8541.29.00.95

Max Power Dissipation

290W

Element Configuration

Single

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Gate Charge

120nC

Current - Collector Pulsed (Icm)

120A

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Reverse Recovery Time

45 ns

JEDEC-95 Code

TO-247AB

Turn On Time

69 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Turn Off Time-Nom (toff)

160 ns

IGBT Type

Field Stop

Power - Max

290W

Transistor Application

POWER CONTROL

Td (on/off) @ 25°C

24ns/112ns

Switching Energy

1.19mJ (on), 460μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

60ns

Height

20.6mm

Length

15.6mm

Width

4.7mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH40N65UFDTU-F085

In stock

SKU: FGH40N65UFDTU-F085-9
Manufacturer

ON Semiconductor

Part Status

Active

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2016

Series

Automotive, AEC-Q101

Pbfree Code

yes

Factory Lead Time

12 Weeks

Max Power Dissipation

290W

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Element Configuration

Single

Input Type

Standard

Power - Max

290W

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

80A

Reverse Recovery Time

65 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

IGBT Type

Field Stop

Gate Charge

119nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

23ns/126ns

Switching Energy

1.28mJ (on), 500μJ (off)

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH40N6S2D

In stock

SKU: FGH40N6S2D-9
Manufacturer

ON Semiconductor

Part Status

Obsolete

Package / Case

TO-247-3

Supplier Device Package

TO-247-3

Current-Collector (Ic) (Max)

75A

Test Conditions

390V, 20A, 3Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2002

Mounting Type

Through Hole

Input Type

Standard

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Power - Max

290W

Reverse Recovery Time

48ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 20A

Gate Charge

35nC

Current - Collector Pulsed (Icm)

180A

Td (on/off) @ 25°C

8ns/35ns

Switching Energy

115μJ (on), 195μJ (off)

ON Semiconductor FGH40T100SMD

In stock

SKU: FGH40T100SMD-9
Manufacturer

ON Semiconductor

Published

2012

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1kV

Number of Elements

1

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Factory Lead Time

4 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

HTS Code

8541.29.00.95

Max Power Dissipation

333W

Rise Time-Max

64ns

Packaging

Tube

Power Dissipation

333W

IGBT Type

Trench Field Stop

Gate Charge

265nC

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1kV

Max Collector Current

80A

Reverse Recovery Time

78 ns

JEDEC-95 Code

TO-247AB

Voltage - Collector Emitter Breakdown (Max)

1000V

Turn On Time

76 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

Turn Off Time-Nom (toff)

305 ns

Case Connection

COLLECTOR

Input Type

Standard

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

29ns/285ns

Switching Energy

2.35mJ (on), 1.15mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

20.82mm

Length

15.87mm

Width

4.82mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor FGH40T100SMD-F155

In stock

SKU: FGH40T100SMD-F155-9
Manufacturer

ON Semiconductor

Factory Lead Time

9 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

1kV

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2014

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

333W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Input Type

Standard

Power - Max

333W

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

80A

Reverse Recovery Time

78 ns

Voltage - Collector Emitter Breakdown (Max)

1000V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

398nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

29ns/285ns

Switching Energy

2.35mJ (on), 1.15mJ (off)

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH40T120SMD-F155

In stock

SKU: FGH40T120SMD-F155-9
Manufacturer

ON Semiconductor

Turn Off Delay Time

475 ns

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

1.2kV

Power Dissipation

555W

Factory Lead Time

5 Weeks

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2013

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

555W

Element Configuration

Single

Test Conditions

600V, 40A, 10 Ω, 15V

Input Type

Standard

IGBT Type

Trench Field Stop

Gate Charge

370nC

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Reverse Recovery Time

65 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Max Junction Temperature (Tj)

175°C

Continuous Collector Current

80A

Turn On Delay Time

40 ns

Polarity/Channel Type

N-CHANNEL

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

40ns/475ns

Switching Energy

2.7mJ (on), 1.1mJ (off)

Gate-Emitter Voltage-Max

25V

Gate-Emitter Thr Voltage-Max

7.5V

Height

24.75mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor FGH40T120SMDL4

In stock

SKU: FGH40T120SMDL4-9
Manufacturer

ON Semiconductor

Terminal Finish

Tin (Sn)

Mounting Type

Through Hole

Package / Case

TO-247-4

Number of Pins

3

Weight

6.289g

Collector-Emitter Breakdown Voltage

1.2kV

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Test Conditions

600V, 40A, 10 Ω, 15V

Published

2016

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Mount

Through Hole

Factory Lead Time

6 Weeks

Reverse Recovery Time

65 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Input Type

Standard

Power - Max

555W

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

80A

Max Power Dissipation

555W

HTS Code

8541.29.00.95

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

370nC

Current - Collector Pulsed (Icm)

160A

Td (on/off) @ 25°C

44ns/464ns

Switching Energy

2.24mJ (on), 1.02mJ (off)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

RoHS Status

ROHS3 Compliant

ON Semiconductor FGH40T65SH-F155

In stock

SKU: FGH40T65SH-F155-9
Manufacturer

ON Semiconductor

Factory Lead Time

6 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 40A, 6 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2015

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

268W

Element Configuration

Single

Input Type

Standard

Power - Max

268W

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

80A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

72.2nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

19.2ns/65.6ns

Switching Energy

1.01mJ (on), 297μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor FGH40T65SHDF-F155

In stock

SKU: FGH40T65SHDF-F155-9
Manufacturer

ON Semiconductor

Factory Lead Time

6 Weeks

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.39g

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 40A, 6 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

268W

Element Configuration

Single

Input Type

Standard

Power - Max

268W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Reverse Recovery Time

101 ns

Vce(on) (Max) @ Vge, Ic

1.81V @ 15V, 40A

IGBT Type

Field Stop

Gate Charge

68nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

18ns/64ns

Switching Energy

1.22mJ (on), 440μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7.5V

RoHS Status

ROHS3 Compliant