Showing 2677–2688 of 3680 results
ON Semiconductor FGH40T65SPD-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Factory Lead Time |
5 Weeks |
| Max Power Dissipation |
267W |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
267W |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Max Collector Current |
80A |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| IGBT Type |
NPT |
| Gate Charge |
36nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
18ns/35ns |
| Switching Energy |
1.16MJ (on), 270μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40T65SPD-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Max Power Dissipation |
267W |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
10 Weeks |
| Input Type |
Standard |
| Element Configuration |
Single |
| Power - Max |
267W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
34 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
35nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
16ns/37ns |
| Switching Energy |
1.16mJ (on), 280μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH40T65SQD-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Reach Compliance Code |
compliant |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 10A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2016 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
13 Weeks |
| Input Type |
Standard |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power - Max |
238W |
| Reverse Recovery Time |
31.8ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
80nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
16.4ns/86.4ns |
| Switching Energy |
138μJ (on), 52μJ (off) |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGH40T65UPD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 7 Ω, 15V |
| Packaging |
Tube |
| Published |
2013 |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
268W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Contact Plating |
Tin |
| Factory Lead Time |
50 Weeks |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
177nC |
| Power - Max |
268W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
43 ns |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
57 ns |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
213 ns |
| Case Connection |
COLLECTOR |
| Element Configuration |
Single |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
20ns/144ns |
| Switching Energy |
1.59mJ (on), 580μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
22ns |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
ON Semiconductor FGH40T65UQDF-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Part Status |
Active |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
6.39g |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2014 |
| Pbfree Code |
yes |
| Factory Lead Time |
13 Weeks |
| Input Type |
Standard |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Power - Max |
231W |
| Reverse Recovery Time |
89ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
1.67V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
306nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
32ns/271ns |
| Switching Energy |
989μJ (on), 310μJ (off) |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGH40T70SHD-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
6.39g |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 40A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2012 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
268W |
| Reverse Recovery Time |
37ns |
| Voltage - Collector Emitter Breakdown (Max) |
700V |
| Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
69nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
22ns/66ns |
| Switching Energy |
1.15mJ (on), 271μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH4L50T65SQD
In stock
| Manufacturer |
650 V |
|---|---|
| Mounting Type |
TO-247-4 |
| Brand |
650 V |
| Current-Collector (Ic) (Max) |
30 |
| Maximum Collector Emitter Voltage |
– 20 V, + 20 V |
| Maximum Gate Emitter Voltage |
+ 175 C |
| Maximum Operating Temperature |
onsemi |
| Mfr |
– 55 C |
| Minimum Operating Temperature |
Through Hole |
| Mounting Styles |
Tube |
| Package |
TO-247-4LD |
| Package Type |
268 W |
| Pd - Power Dissipation |
Obsolete |
| Technology |
Single |
| Configuration |
268W |
| Vce(on) (Max) @ Vge, Ic |
80A |
ON Semiconductor FGH50N3
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
300V |
| Number of Elements |
1 |
| Test Conditions |
180V, 30A, 5 Ω, 15V |
| Turn Off Delay Time |
135 ns |
| Max Power Dissipation |
463W |
| Factory Lead Time |
4 Weeks |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
300V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
75A |
| Turn Off Time-Nom (toff) |
162 ns |
| IGBT Type |
PT |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
20 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
15ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
300V |
| Max Collector Current |
75A |
| Turn On Time |
32 ns |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 15V, 30A |
| Element Configuration |
Single |
| Power Dissipation |
463W |
| Gate Charge |
180nC |
| Current - Collector Pulsed (Icm) |
240A |
| Td (on/off) @ 25°C |
20ns/135ns |
| Switching Energy |
130μJ (on), 92μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.5V |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGH50N6S2D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| HTS Code |
8541.29.00.95 |
| Factory Lead Time |
4 Weeks |
| Packaging |
Tube |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Test Conditions |
390V, 30A, 3 Ω, 15V |
| Voltage - Rated DC |
600V |
| Reverse Recovery Time |
55ns |
| Turn On Time |
28 ns |
| Element Configuration |
Single |
| Power Dissipation |
463W |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
15ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
75A |
| Max Power Dissipation |
463W |
| Current Rating |
75A |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
180 ns |
| Gate Charge |
70nC |
| Current - Collector Pulsed (Icm) |
240A |
| Td (on/off) @ 25°C |
13ns/55ns |
| Switching Energy |
260μJ (on), 250μJ (off) |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGH50T65SQD-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
6.39g |
| Current-Collector (Ic) (Max) |
100A |
| Test Conditions |
400V, 12.5A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2016 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Factory Lead Time |
4 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
268W |
| Reverse Recovery Time |
31ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
99nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
22ns/105ns |
| Switching Energy |
180μJ (on), 45μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH50T65UPD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 50A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
50 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
340W |
| Rise Time-Max |
77ns |
| Packaging |
Tube |
| Case Connection |
COLLECTOR |
| Gate Charge |
230nC |
| Current - Collector Pulsed (Icm) |
150A |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
53 ns |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
101 ns |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
185 ns |
| IGBT Type |
Trench Field Stop |
| Input Type |
Standard |
| Power - Max |
340W |
| Td (on/off) @ 25°C |
32ns/160ns |
| Switching Energy |
2.7mJ (on), 740μJ (off) |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Fall Time-Max (tf) |
29ns |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |