Showing 2689–2700 of 3680 results
ON Semiconductor FGH60N60SFDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2017 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 60A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
FGH60N60 |
| Factory Lead Time |
5 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
378W |
| Packaging |
Tube |
| Element Configuration |
Single |
| IGBT Type |
Field Stop |
| Gate Charge |
198nC |
| Power - Max |
378W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
120A |
| Reverse Recovery Time |
47 ns |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
66 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| Turn Off Time-Nom (toff) |
187 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
22ns/134ns |
| Switching Energy |
1.79mJ (on), 670μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
62ns |
| Height |
20.6mm |
| Length |
15.6mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH60N60SFDTU-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
600V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
5 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Test Conditions |
400V, 60A, 5 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Max Collector Current |
120A |
| Reverse Recovery Time |
55 ns |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
378W |
| Collector Emitter Voltage (VCEO) |
2.9V |
| Max Power Dissipation |
378W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| IGBT Type |
Field Stop |
| Gate Charge |
188nC |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
26ns/134ns |
| Switching Energy |
1.97mJ (on), 570μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH60N60SFTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2008 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 60A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
378W |
| Base Part Number |
FGH60N60 |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Gate Charge |
198nC |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
120A |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
66 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| Turn Off Time-Nom (toff) |
187 ns |
| IGBT Type |
Field Stop |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
22ns/134ns |
| Case Connection |
COLLECTOR |
| Switching Energy |
1.79mJ (on), 670μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
62ns |
| Height |
20.6mm |
| Length |
15.6mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Power - Max |
378W |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH60N60SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 60A, 3 Ω, 15V |
| Turn Off Delay Time |
146 ns |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
5 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
600W |
| Base Part Number |
FGH60N60 |
| Rise Time-Max |
70ns |
| Packaging |
Tube |
| Case Connection |
COLLECTOR |
| Gate Charge |
189nC |
| Current - Collector Pulsed (Icm) |
180A |
| Power - Max |
600W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
120A |
| Reverse Recovery Time |
39 ns |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
59 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 60A |
| Turn Off Time-Nom (toff) |
163 ns |
| IGBT Type |
Field Stop |
| Input Type |
Standard |
| Turn On Delay Time |
27 ns |
| Td (on/off) @ 25°C |
18ns/104ns |
| Switching Energy |
1.26mJ (on), 450μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
68ns |
| Height |
20.6mm |
| Length |
15.6mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGH60N60SMD-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
120A |
| Test Conditions |
400V, 60A, 3 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2013 |
| JESD-30 Code |
R-PSFM-T3 |
| Series |
Automotive, AEC-Q101 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Factory Lead Time |
5 Weeks |
| Turn On Time |
66 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
600W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
42ns |
| JEDEC-95 Code |
TO-247AB |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation-Max (Abs) |
600W |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 60A |
| Turn Off Time-Nom (toff) |
139 ns |
| Rise Time-Max |
60ns |
| IGBT Type |
Field Stop |
| Gate Charge |
280nC |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
22ns/116ns |
| Switching Energy |
1.59mJ (on), 390μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
20ns |
| Case Connection |
COLLECTOR |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH60N60UFDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Case Connection |
COLLECTOR |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
120A |
| Number of Elements |
1 |
| Test Conditions |
400V, 60A, 5 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Turn Off Delay Time |
130 ns |
| Published |
2015 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
298W |
| Base Part Number |
FGH60N60 |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
5 Weeks |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
23ns/130ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Reverse Recovery Time |
47ns |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
83 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 60A |
| Turn Off Time-Nom (toff) |
204 ns |
| IGBT Type |
Field Stop |
| Gate Charge |
188nC |
| Turn On Delay Time |
23 ns |
| Input Type |
Standard |
| Switching Energy |
1.81mJ (on), 810μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
80ns |
| Height |
20.6mm |
| Length |
15.6mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Lead Free |
ON Semiconductor FGH60N60UFDTU-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
600V |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
4 Weeks |
| Packaging |
Tube |
| Published |
2016 |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Test Conditions |
400V, 60A, 5 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Max Collector Current |
120A |
| Reverse Recovery Time |
76 ns |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
298W |
| Collector Emitter Voltage (VCEO) |
2.9V |
| Max Power Dissipation |
298W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| IGBT Type |
Field Stop |
| Gate Charge |
192nC |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
29ns/138ns |
| Switching Energy |
2.47mJ (on), 810μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH60N6S2
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Current-Collector (Ic) (Max) |
75A |
| Test Conditions |
390V, 40A, 3Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2003 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
625W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 40A |
| Gate Charge |
140nC |
| Current - Collector Pulsed (Icm) |
320A |
| Td (on/off) @ 25°C |
18ns/70ns |
| Switching Energy |
400μJ (on), 310μJ (off) |
ON Semiconductor FGH60T65SHD-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 60A, 6 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
10 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Max Power Dissipation |
349W |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
349W |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
120A |
| Reverse Recovery Time |
34.6 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 60A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
102nC |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
26ns/87ns |
| Switching Energy |
1.69mJ (on), 630μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH60T65SQD-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
120A |
| Test Conditions |
400V, 15A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Input Type |
Standard |
| Power - Max |
333W |
| Reverse Recovery Time |
34.6ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 60A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
79nC |
| Current - Collector Pulsed (Icm) |
240A |
| Td (on/off) @ 25°C |
20.8ns/102ns |
| Switching Energy |
227μJ (on), 100μJ (off) |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGH75N60UFTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 75A, 3 Ω, 15V |
| Element Configuration |
Single |
| Factory Lead Time |
4 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
452W |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Switching Energy |
3.05mJ (on), 1.35mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
150A |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 75A |
| IGBT Type |
Field Stop |
| Gate Charge |
250nC |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
27ns/128ns |
| Power - Max |
452W |
| Polarity/Channel Type |
N-CHANNEL |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
80ns |
| Height |
20.6mm |
| Length |
15.6mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGH75T65SHDTL4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Number of Pins |
4 |
| Weight |
6.289g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 75A, 15 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
455W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
455W |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
150A |
| Reverse Recovery Time |
76 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Field Stop |
| Gate Charge |
126nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
55ns/189ns |
| Switching Energy |
1.06mJ (on), 1.56mJ (off) |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |