Showing 2701–2712 of 3680 results
ON Semiconductor FGH75T65SHDTLN4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
400V, 75A, 15 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Base Part Number |
48CTQ060 |
| Input Type |
Standard |
| Power - Max |
455W |
| Reverse Recovery Time |
36ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
126nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
55ns/189ns |
| Switching Energy |
1.06mJ (on), 1.56mJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH75T65SQDNL4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
9 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Current-Collector (Ic) (Max) |
200A |
| Test Conditions |
400V, 75A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Terminal Finish |
Tin (Sn) |
| Reach Compliance Code |
compliant |
| Input Type |
Standard |
| Power - Max |
375W |
| Reverse Recovery Time |
134ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
152nC |
| Td (on/off) @ 25°C |
44ns/208ns |
| Switching Energy |
1.25mJ (on), 1.26mJ (off) |
ON Semiconductor FGH75T65SQDT_F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
6.39g |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
400V, 18.8A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Input Type |
Standard |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power - Max |
375W |
| Reverse Recovery Time |
76ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
128nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
23ns/120ns |
| Switching Energy |
300μJ (on), 70μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH75T65SQDTL4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Weight |
6.289g |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
400V, 18.8A, 15 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Reverse Recovery Time |
76ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
128nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
44ns/276ns |
| Switching Energy |
307μJ (on), 266μJ (off) |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGH75T65UPD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 75A, 3 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Rise Time-Max |
56ns |
| Mount |
Through Hole |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
375W |
| Packaging |
Tube |
| Element Configuration |
Single |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
32ns/166ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
150A |
| Reverse Recovery Time |
85 ns |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
385nC |
| Input Type |
Standard |
| Power - Max |
375W |
| Switching Energy |
2.85mJ (on), 1.2mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH75T65UPD-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 75A, 3 Ω, 15V |
| Reach Compliance Code |
not_compliant |
| Mount |
Through Hole |
| Series |
Automotive, AEC-Q101 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
375W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
87 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
375W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
150A |
| Reverse Recovery Time |
85 ns |
| Rise Time-Max |
71ns |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
197 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
578nC |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
32ns/166ns |
| Switching Energy |
2.85mJ (on), 1.2mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH75T65UPD-F155
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
400V, 75A, 3 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
375W |
| Reverse Recovery Time |
85ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
68nC |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
42ns/216ns |
| Switching Energy |
3.68mJ (on), 1.6mJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH80N60FD2TU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2009 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
290W |
| Element Configuration |
Single |
| Mount |
Through Hole |
| Factory Lead Time |
5 Weeks |
| Gate Charge |
120nC |
| Power - Max |
290W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
61 ns |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
74 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
201 ns |
| IGBT Type |
Field Stop |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
21ns/126ns |
| Input Type |
Standard |
| Switching Energy |
1mJ (on), 520μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Fall Time-Max (tf) |
100ns |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| Transistor Application |
POWER CONTROL |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGH80N60FDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Turn Off Delay Time |
126 ns |
| Case Connection |
COLLECTOR |
| Factory Lead Time |
4 Weeks |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
290W |
| Element Configuration |
Single |
| Operating Temperature |
-55°C~150°C TJ |
| Input Type |
Standard |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
160A |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
80A |
| Reverse Recovery Time |
36 ns |
| JEDEC-95 Code |
TO-247AB |
| Turn On Time |
74 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
201 ns |
| IGBT Type |
Field Stop |
| Turn On Delay Time |
21 ns |
| Power - Max |
290W |
| Td (on/off) @ 25°C |
21ns/126ns |
| Switching Energy |
1mJ (on), 520μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Fall Time-Max (tf) |
100ns |
| Height |
20.6mm |
| Length |
15.6mm |
| Width |
4.7mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |