Showing 2713–2724 of 3680 results
ON Semiconductor FGHL50T65SQ
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
100A |
| Test Conditions |
400V, 25A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Reach Compliance Code |
not_compliant |
| Input Type |
Standard |
| Power - Max |
268W |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Gate Charge |
99nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
19ns/93ns |
| Switching Energy |
410μJ (on), 88μJ (off) |
ON Semiconductor FGI3236-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-30 Code |
R-PSIP-T3 |
| Mounting Type |
Through Hole |
| Weight |
2.084g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
360V |
| Number of Elements |
1 |
| Test Conditions |
300V, 1k Ω, 5V |
| Packaging |
Tube |
| Published |
2017 |
| Operating Temperature |
-40°C~175°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Finish |
MATTE TIN |
| Max Power Dissipation |
187W |
| Mount |
Through Hole |
| Factory Lead Time |
11 Weeks |
| Max Collector Current |
44A |
| Turn On Time |
2350 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Logic |
| Power - Max |
187W |
| Clamping Voltage |
360V |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.32V |
| Rise Time-Max |
7000ns |
| Number of Outputs |
1 |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 4V, 6A |
| Turn Off Time-Nom (toff) |
7040 ns |
| Gate Charge |
20nC |
| Td (on/off) @ 25°C |
-/5.4μs |
| Gate-Emitter Thr Voltage-Max |
2.2V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
ON Semiconductor FGL12040WD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
5 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Weight |
6.756g |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
600V, 40A, 23 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Published |
2017 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
391W |
| Reverse Recovery Time |
71ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
226nC |
| Current - Collector Pulsed (Icm) |
100A |
| Td (on/off) @ 25°C |
45ns/560ns |
| Switching Energy |
4.1mJ (on), 1mJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGL35N120FTDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Weight |
6.756g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 35A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
368W |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Current - Collector Pulsed (Icm) |
105A |
| Power - Max |
368W |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
70A |
| Reverse Recovery Time |
337 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 35A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
210nC |
| Td (on/off) @ 25°C |
34ns/172ns |
| Switching Energy |
2.5mJ (on), 1.7mJ (off) |
| Input Type |
Standard |
| Gate-Emitter Voltage-Max |
25V |
| Gate-Emitter Thr Voltage-Max |
7.5V |
| Height |
26.4mm |
| Length |
20.2mm |
| Width |
5.2mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Polarity/Channel Type |
N-CHANNEL |
| Lead Free |
Lead Free |
ON Semiconductor FGL40N120ANDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Weight |
6.756g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 40A, 5 Ω, 15V |
| Current Rating |
64A |
| Factory Lead Time |
4 Weeks |
| Packaging |
Tube |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
500W |
| Turn Off Delay Time |
110 ns |
| Element Configuration |
Single |
| Max Junction Temperature (Tj) |
150°C |
| Continuous Collector Current |
64A |
| Turn On Delay Time |
15 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
20ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
64A |
| Reverse Recovery Time |
112 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
3.2V @ 15V, 40A |
| Power Dissipation |
500W |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
165 ns |
| IGBT Type |
NPT |
| Gate Charge |
220nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
15ns/110ns |
| Switching Energy |
2.3mJ (on), 1.1mJ (off) |
| Height |
29mm |
| Length |
20mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGL60N100BNTD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2017 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Weight |
6.756g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
600V, 60A, 51 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
60A |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
MATTE TIN |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1kV |
| Max Power Dissipation |
180W |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
320ns |
| Collector Emitter Voltage (VCEO) |
1kV |
| Max Collector Current |
60A |
| Reverse Recovery Time |
1.2 μs |
| Voltage - Collector Emitter Breakdown (Max) |
1000V |
| Max Breakdown Voltage |
1kV |
| Turn On Time |
460 ns |
| Turn Off Time-Nom (toff) |
760 ns |
| IGBT Type |
NPT and Trench |
| Polarity |
NPN |
| Gate Charge |
275nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
140ns/630ns |
| Height |
26mm |
| Length |
20mm |
| Width |
5mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
180W |
| Lead Free |
Lead Free |
ON Semiconductor FGL60N100BNTDTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Number of Pins |
3 |
| Weight |
6.756g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1kV |
| Number of Elements |
1 |
| Test Conditions |
600V, 60A, 51 Ω, 15V |
| Max Power Dissipation |
180W |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1kV |
| Mount |
Through Hole |
| Factory Lead Time |
10 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1kV |
| Max Collector Current |
60A |
| Reverse Recovery Time |
1.2 μs |
| Voltage - Collector Emitter Breakdown (Max) |
1000V |
| Turn On Time |
460 ns |
| Turn Off Time-Nom (toff) |
760 ns |
| IGBT Type |
NPT and Trench |
| Current Rating |
60A |
| Gate Charge |
275nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
140ns/630ns |
| Height |
26mm |
| Length |
20mm |
| Width |
5mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
180W |
| Lead Free |
Lead Free |
ON Semiconductor FGL60N100DTU
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-264-3, TO-264AA |
| Supplier Device Package |
TO-264-3 |
| Current-Collector (Ic) (Max) |
60A |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
176W |
| Reverse Recovery Time |
1.5μs |
| Voltage - Collector Emitter Breakdown (Max) |
1000V |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 60A |
| IGBT Type |
Trench |
| Gate Charge |
230nC |
| Current - Collector Pulsed (Icm) |
120A |
ON Semiconductor FGP15N60UNDF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
1.8g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 15A, 10 Ω, 15V |
| Element Configuration |
Single |
| Factory Lead Time |
4 Weeks |
| Published |
2013 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
178W |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
178W |
| Gate Charge |
43nC |
| Current - Collector Pulsed (Icm) |
45A |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
30A |
| Reverse Recovery Time |
82.4ns |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
18.8 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 15A |
| Turn Off Time-Nom (toff) |
69.8 ns |
| IGBT Type |
NPT |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Td (on/off) @ 25°C |
9.3ns/54.8ns |
| Switching Energy |
370μJ (on), 67μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
8.5V |
| Fall Time-Max (tf) |
12.8ns |
| Height |
16.51mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGP3040G2-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
5 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Current-Collector (Ic) (Max) |
41A |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2006 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Rise Time-Max |
7000ns |
| Input Type |
Logic |
| Power - Max |
150W |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
400V |
| Power Dissipation-Max (Abs) |
150W |
| Vce(on) (Max) @ Vge, Ic |
1.25V @ 4V, 6A |
| Gate Charge |
21nC |
| Td (on/off) @ 25°C |
900ns/4.8μs |
| Gate-Emitter Voltage-Max |
12V |
| Gate-Emitter Thr Voltage-Max |
2.2V |
| Fall Time-Max (tf) |
15000ns |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGP30N6S2
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Part Status |
Obsolete |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220-3 |
| Current-Collector (Ic) (Max) |
45A |
| Test Conditions |
390V, 12A, 10Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Input Type |
Standard |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Power - Max |
167W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
| Gate Charge |
23nC |
| Current - Collector Pulsed (Icm) |
108A |
| Td (on/off) @ 25°C |
6ns/40ns |
| Switching Energy |
55μJ (on), 100μJ (off) |
ON Semiconductor FGP30N6S2D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220-3 |
| Current-Collector (Ic) (Max) |
45A |
| Test Conditions |
390V, 12A, 10Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
167W |
| Reverse Recovery Time |
46ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
| Gate Charge |
23nC |
| Current - Collector Pulsed (Icm) |
108A |
| Td (on/off) @ 25°C |
6ns/40ns |
| Switching Energy |
55μJ (on), 100μJ (off) |