Showing 2737–2748 of 3680 results
ON Semiconductor FGPF90N30
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
300V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Mount |
Through Hole |
| Element Configuration |
Single |
| Max Power Dissipation |
56.8W |
| Power Dissipation |
56.8W |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
300V |
| Vce(on) (Max) @ Vge, Ic |
1.55V @ 15V, 30A |
| Gate Charge |
93nC |
| Current - Collector Pulsed (Icm) |
220A |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor FGY100T120RWD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Package / Case |
TO-247-3 |
| Mounting Style |
Through Hole |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Maximum Gate Emitter Voltage |
– 20 V, 20 V |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
1.495 kW |
| Technology |
Si |
| Configuration |
Single |
ON Semiconductor FGY100T65SCDT
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
200A |
| Test Conditions |
400V, 100A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Factory Lead Time |
6 Weeks |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
750W |
| Reverse Recovery Time |
62ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 100A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
157nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
84ns/216ns |
| Switching Energy |
5.4mJ (on), 3.8mJ (off) |
| RoHS Status |
RoHS Compliant |
ON Semiconductor FGY120T65SPD-F085
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
7.629g |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 120A, 5 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Series |
Automotive, AEC-Q101 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Power Dissipation |
882W |
| Reach Compliance Code |
not_compliant |
| Input Type |
Standard |
| Power - Max |
882W |
| Collector Emitter Voltage (VCEO) |
1.85V |
| Max Collector Current |
240A |
| Reverse Recovery Time |
123 ns |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 120A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
162nC |
| Current - Collector Pulsed (Icm) |
378A |
| Td (on/off) @ 25°C |
53ns/102ns |
| Switching Energy |
6.8μJ (on), 3.5μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGY40T120SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Terminal Finish |
Tin (Sn) |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Pbfree Code |
yes |
| JESD-609 Code |
e3 |
| HTS Code |
8541.29.00.95 |
| Packaging |
Tube |
| Test Conditions |
600V, 40A, 10 Ω, 15V |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Weight |
7.629g |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Switching Energy |
2.7mJ (on), 1.1mJ (off) |
| Td (on/off) @ 25°C |
40ns/475ns |
| Current - Collector Pulsed (Icm) |
160A |
| Gate Charge |
370nC |
| IGBT Type |
Trench Field Stop |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| Reverse Recovery Time |
65 ns |
| Max Power Dissipation |
882W |
| Max Collector Current |
80A |
| Collector Emitter Voltage (VCEO) |
2.4V |
| Power - Max |
882W |
| Input Type |
Standard |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| RoHS Status |
ROHS3 Compliant |
ON Semiconductor FGY60T120SQDN
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
5 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
120A |
| Test Conditions |
600V, 60A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Reach Compliance Code |
compliant |
| Input Type |
Standard |
| Power - Max |
517W |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 60A |
| Gate Charge |
311nC |
| Current - Collector Pulsed (Icm) |
240A |
| Td (on/off) @ 25°C |
52ns/296ns |
ON Semiconductor FGY75N60SMD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2010 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Number of Pins |
3 |
| Weight |
7.629g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
400V, 75A, 3 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Element Configuration |
Single |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
750W |
| Mount |
Through Hole |
| Factory Lead Time |
6 Weeks |
| Current - Collector Pulsed (Icm) |
225A |
| Power - Max |
750W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
150A |
| Reverse Recovery Time |
55 ns |
| Turn On Time |
76 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
161 ns |
| IGBT Type |
Field Stop |
| Gate Charge |
248nC |
| Td (on/off) @ 25°C |
24ns/136ns |
| Switching Energy |
2.3mJ (on), 770μJ (off) |
| Input Type |
Standard |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Fall Time-Max (tf) |
29ns |
| Height |
20.32mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Lead Free |
ON Semiconductor FGY75T120SQDN
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
600V, 75A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Factory Lead Time |
48 Weeks |
| Power - Max |
790W |
| Input Type |
Standard |
| Reverse Recovery Time |
99ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 75A |
| IGBT Type |
Field Stop |
| Gate Charge |
399nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
64ns/332ns |
| Switching Energy |
6.25mJ (on), 1.96mJ (off) |
| RoHS Status |
Non-RoHS Compliant |
ON Semiconductor FGY75T120SWD
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Package / Case |
TO-247-3 |
| Mounting Style |
Through Hole |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Maximum Gate Emitter Voltage |
– 20 V, 20 V |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Pd - Power Dissipation |
503 W |
| Technology |
Si |
| Configuration |
Single |
ON Semiconductor FGY75T95LQDT
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
7 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
600V, 37.5A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Input Type |
Standard |
| Power - Max |
453W |
| Reverse Recovery Time |
259ns |
| Voltage - Collector Emitter Breakdown (Max) |
950V |
| Vce(on) (Max) @ Vge, Ic |
1.69V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
663.3nC |
| Current - Collector Pulsed (Icm) |
225A |
| Td (on/off) @ 25°C |
52ns/496ns |
| Switching Energy |
2mJ (on), 1.8mJ (off) |
| RoHS Status |
Non-RoHS Compliant |
ON Semiconductor FGY75T95SQDT
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
8 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Variant |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
600V, 75A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Input Type |
Standard |
| Power - Max |
434W |
| Reverse Recovery Time |
259ns |
| Voltage - Collector Emitter Breakdown (Max) |
950V |
| Vce(on) (Max) @ Vge, Ic |
2.11V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
137nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
28.8ns/117ns |
| Switching Energy |
8.8mJ (on), 3.2mJ (off) |
| RoHS Status |
Non-RoHS Compliant |
ON Semiconductor HGT1S10N120BNS
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Base Part Number |
HGT1S10N120 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 10A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
yes |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
312W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
35A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount, Through Hole |
| Factory Lead Time |
44 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 10A |
| Continuous Collector Current |
55A |
| Current |
35A |
| Power Dissipation |
298W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
35A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
1.2kV |
| Turn On Time |
32 ns |
| Voltage |
1.2kV |
| JESD-30 Code |
R-PSSO-G2 |
| Turn Off Time-Nom (toff) |
330 ns |
| IGBT Type |
NPT |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
23ns/165ns |
| Switching Energy |
320μJ (on), 800μJ (off) |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |