Showing 2749–2760 of 3680 results
ON Semiconductor HGT1S10N120BNST
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pbfree Code |
yes |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 10A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
4 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
298W |
| Terminal Form |
GULL WING |
| Current Rating |
35A |
| Base Part Number |
HGT1S10N120 |
| JESD-609 Code |
e3 |
| Rise Time-Max |
15ns |
| Turn Off Time-Nom (toff) |
330 ns |
| IGBT Type |
NPT |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
35A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
1.2kV |
| Turn On Time |
32 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 10A |
| Continuous Collector Current |
55A |
| Element Configuration |
Single |
| Power Dissipation |
298W |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
23ns/165ns |
| Switching Energy |
320μJ (on), 800μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Fall Time-Max (tf) |
200ns |
| Height |
4.83mm |
| Length |
10.67mm |
| Width |
9.65mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGT1S12N60A4DS
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.31247g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
96 μs |
| Operating Temperature |
-55°C~150°C TJ |
| Terminal Form |
GULL WING |
| Mount |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
167W |
| Packaging |
Tube |
| Peak Reflow Temperature (Cel) |
260 |
| Max Collector Current |
54A |
| Reverse Recovery Time |
30ns |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Power Dissipation |
167W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
17 μs |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
HGT1S12N60 |
| Turn On Time |
33 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
180 ns |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGT1S14N36G3VLT
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Voltage - Rated DC |
380V |
| Mounting Type |
Through Hole |
| Number of Pins |
3 |
| Supplier Device Package |
I2PAK (TO-262) |
| Collector-Emitter Breakdown Voltage |
390V |
| Current-Collector (Ic) (Max) |
18A |
| Test Conditions |
300V, 7A, 25Ohm, 5V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-40°C |
| Mount |
Surface Mount, Through Hole |
| Current Rating |
18A |
| Max Power Dissipation |
100W |
| Element Configuration |
Single |
| Power Dissipation |
100W |
| Input Type |
Logic |
| Power - Max |
100W |
| Collector Emitter Voltage (VCEO) |
330V |
| Max Collector Current |
18A |
| Voltage - Collector Emitter Breakdown (Max) |
390V |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 5V, 14A |
| Gate Charge |
24nC |
| Td (on/off) @ 25°C |
-/7μs |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGT1S14N36G3VLT_NL
In stock
| Manufacturer |
Rochester Electronics LLC |
|---|---|
| Surface Mount |
YES |
| Number of Terminals |
2 |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
ROCHESTER ELECTRONICS INC |
| Manufacturer Part Number |
HGT1S14N36G3VLT_NL |
| Package Body Material |
PLASTIC/EPOXY |
| Package Description |
SMALL OUTLINE, R-PSSO-G2 |
| Package Shape |
RECTANGULAR |
| Package Style |
SMALL OUTLINE |
| Part Life Cycle Code |
Active |
| Part Package Code |
D2PAK |
| Risk Rank |
5.61 |
| Turn-off Time-Nom (toff) |
7000 ns |
| Terminal Finish |
MATTE TIN |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
COMMERCIAL |
| Number of Elements |
1 |
| Case Connection |
COLLECTOR |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-263AB |
| Collector Current-Max (IC) |
18 A |
ON Semiconductor HGT1S20N60A4S9A
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-263AB |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
70A |
| Test Conditions |
390V, 20A, 3Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
290W |
| Current Rating |
70A |
| Element Configuration |
Single |
| Power Dissipation |
290W |
| Input Type |
Standard |
| Power - Max |
290W |
| Rise Time |
12ns |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
70A |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
| Gate Charge |
142nC |
| Current - Collector Pulsed (Icm) |
280A |
| Td (on/off) @ 25°C |
15ns/73ns |
| Switching Energy |
105μJ (on), 150μJ (off) |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGT1S2N120CN
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Element Configuration |
Single |
| Mounting Type |
Through Hole |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
960V, 2.6A, 51 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
104W |
| Current Rating |
13A |
| Mount |
Through Hole |
| Input Type |
Standard |
| Power Dissipation |
104W |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
13A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 2.6A |
| IGBT Type |
NPT |
| Gate Charge |
30nC |
| Current - Collector Pulsed (Icm) |
20A |
| Td (on/off) @ 25°C |
25ns/205ns |
| Switching Energy |
96μJ (on), 355μJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGT1S7N60B3
In stock
| Manufacturer |
Rochester Electronics LLC |
|---|---|
| Package Shape |
RECTANGULAR |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC |
| Manufacturer Part Number |
HGT1S7N60B3 |
| Moisture Sensitivity Level |
NOT SPECIFIED |
| Package Body Material |
PLASTIC/EPOXY |
| Turn-on Time-Nom (ton) |
24 ns |
| Surface Mount |
NO |
| Package Style |
IN-LINE |
| Part Life Cycle Code |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.63 |
| Rohs Code |
No |
| Turn-off Time-Nom (toff) |
230 ns |
| Package Description |
PLASTIC PACKAGE-3 |
| JESD-609 Code |
e0 |
| Qualification Status |
COMMERCIAL |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSIP-T3 |
| Pbfree Code |
No |
| Terminal Finish |
TIN LEAD |
| Configuration |
SINGLE |
| Case Connection |
COLLECTOR |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-262AA |
| Collector Current-Max (IC) |
14 A |
| Collector-Emitter Voltage-Max |
600 V |
ON Semiconductor HGTD1N120BNS9A
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
260.37mg |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 1A, 82 Ω, 15V |
| Turn Off Delay Time |
67 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2014 |
| Pbfree Code |
yes |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
60W |
| Terminal Form |
GULL WING |
| Current Rating |
5.3A |
| Base Part Number |
HGTD1N120 |
| Mount |
Surface Mount |
| Factory Lead Time |
7 Weeks |
| Turn On Time |
24 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 1A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
15 ns |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
5.3A |
| JEDEC-95 Code |
TO-252AA |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
1.2kV |
| Element Configuration |
Single |
| Rise Time-Max |
14ns |
| Turn Off Time-Nom (toff) |
333 ns |
| IGBT Type |
NPT |
| Gate Charge |
14nC |
| Current - Collector Pulsed (Icm) |
6A |
| Td (on/off) @ 25°C |
15ns/67ns |
| Switching Energy |
70μJ (on), 90μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
60W |
| Lead Free |
Lead Free |
ON Semiconductor HGTD7N60C3S9A
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
260.37mg |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Max Power Dissipation |
60W |
| Factory Lead Time |
44 Weeks |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Packaging |
Tape & Reel (TR) |
| Terminal Form |
GULL WING |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Power Dissipation |
60W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Peak Reflow Temperature (Cel) |
260 |
| Current Rating |
14A |
| JEDEC-95 Code |
TO-252AA |
| Turn On Time |
20 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 7A |
| Turn Off Time-Nom (toff) |
490 ns |
| Gate Charge |
23nC |
| Current - Collector Pulsed (Icm) |
56A |
| Switching Energy |
165μJ (on), 600μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG10N120BND
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 10A, 10 Ω, 15V |
| Turn Off Delay Time |
165 ns |
| Max Power Dissipation |
298W |
| Factory Lead Time |
7 Weeks |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
35A |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 10A |
| Continuous Collector Current |
35A |
| Input Type |
Standard |
| Turn On Delay Time |
23 ns |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
165ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
35A |
| Reverse Recovery Time |
70 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
32 ns |
| Element Configuration |
Single |
| Power Dissipation |
298W |
| Turn Off Time-Nom (toff) |
330 ns |
| IGBT Type |
NPT |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
23ns/165ns |
| Switching Energy |
850μJ (on), 800μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG11N120CND
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Voltage - Rated DC |
1.2kV |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
960V, 11A, 10 Ω, 15V |
| Turn Off Delay Time |
180 ns |
| Packaging |
Tube |
| Published |
2016 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Mount |
Through Hole |
| Factory Lead Time |
5 Weeks |
| Turn On Time |
33 ns |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 11A |
| Element Configuration |
Single |
| Power Dissipation |
298W |
| Input Type |
Standard |
| Turn On Delay Time |
23 ns |
| Transistor Application |
MOTOR CONTROL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
43A |
| Reverse Recovery Time |
70 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Current Rating |
43A |
| Max Power Dissipation |
298W |
| Turn Off Time-Nom (toff) |
570 ns |
| IGBT Type |
NPT |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
23ns/180ns |
| Switching Energy |
950μJ (on), 1.3mJ (off) |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Polarity |
NPN |
| Lead Free |
Lead Free |
ON Semiconductor HGTG12N60A4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Current Rating |
54A |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
Through Hole |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
167W |
| Mount |
Through Hole |
| Element Configuration |
Single |
| Base Part Number |
HGTG12N60 |
| Power Dissipation |
167W |
| Input Type |
Standard |
| Rise Time |
8ns |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
54A |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |