Showing 2761–2772 of 3680 results
ON Semiconductor HGTG12N60A4D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
96 ns |
| Current Rating |
54A |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2002 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
167W |
| Contact Plating |
Tin |
| Factory Lead Time |
4 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
17 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
16ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
54A |
| Reverse Recovery Time |
30 ns |
| Turn On Time |
33 ns |
| Continuous Collector Current |
60A |
| Turn Off Time-Nom (toff) |
180 ns |
| Base Part Number |
HGTG12N60 |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
167W |
| Lead Free |
Lead Free |
ON Semiconductor HGTG12N60B3
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Current-Collector (Ic) (Max) |
27A |
| Test Conditions |
480V, 12A, 25Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
HGTG12N60 |
| Input Type |
Standard |
| Power - Max |
104W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
| Gate Charge |
51nC |
| Current - Collector Pulsed (Icm) |
110A |
| Td (on/off) @ 25°C |
26ns/150ns |
| Switching Energy |
150μJ (on), 250μJ (off) |
ON Semiconductor HGTG12N60C3D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
1997 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~150°C TJ |
| Voltage - Rated DC |
600V |
| Factory Lead Time |
36 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Packaging |
Tube |
| Max Power Dissipation |
104W |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 15A |
| Turn Off Time-Nom (toff) |
480 ns |
| Element Configuration |
Single |
| Power Dissipation |
104W |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
24A |
| Reverse Recovery Time |
42 ns |
| Turn On Time |
30 ns |
| Current Rating |
24A |
| Base Part Number |
HGTG12N60 |
| Gate Charge |
48nC |
| Current - Collector Pulsed (Icm) |
96A |
| Switching Energy |
380μJ (on), 900μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG18N120BN
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Voltage - Rated DC |
1.2kV |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 18A, 3 Ω, 15V |
| Packaging |
Tube |
| Published |
2001 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Mount |
Through Hole |
| Factory Lead Time |
14 Weeks |
| Turn On Time |
38 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 18A |
| Element Configuration |
Single |
| Power Dissipation |
390W |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
54A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Current Rating |
54A |
| Max Power Dissipation |
390W |
| Turn Off Time-Nom (toff) |
345 ns |
| IGBT Type |
NPT |
| Gate Charge |
165nC |
| Current - Collector Pulsed (Icm) |
165A |
| Td (on/off) @ 25°C |
23ns/170ns |
| Switching Energy |
800μJ (on), 1.8mJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| JESD-30 Code |
R-PSFM-T3 |
| Lead Free |
Lead Free |
ON Semiconductor HGTG18N120BND
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 18A, 3 Ω, 15V |
| Turn Off Delay Time |
170 μs |
| Polarity |
NPN |
| Factory Lead Time |
10 Weeks |
| Published |
2011 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
390W |
| Current Rating |
54A |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| IGBT Type |
NPT |
| Gate Charge |
165nC |
| Turn On Delay Time |
23 μs |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
22ns |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
54A |
| Reverse Recovery Time |
75 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
38 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 18A |
| Turn Off Time-Nom (toff) |
345 ns |
| Power Dissipation |
390W |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
23ns/170ns |
| Switching Energy |
1.9mJ (on), 1.8mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Fall Time-Max (tf) |
200ns |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG20N60A4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 3 Ω, 15V |
| Turn Off Delay Time |
73 ns |
| Current Rating |
70A |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
290W |
| Contact Plating |
Tin |
| Factory Lead Time |
4 Weeks |
| Turn Off Time-Nom (toff) |
160 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
15 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
70A |
| Turn On Time |
28 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
| Gate Charge |
142nC |
| Current - Collector Pulsed (Icm) |
280A |
| Base Part Number |
HGTG20N60 |
| Td (on/off) @ 25°C |
15ns/73ns |
| Switching Energy |
105μJ (on), 150μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
290W |
| Lead Free |
Lead Free |
ON Semiconductor HGTG20N60A4D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 20A, 3 Ω, 15V |
| Turn Off Delay Time |
73 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
70A |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
290W |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Turn On Time |
28 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
15 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
70A |
| Reverse Recovery Time |
35 ns |
| Max Breakdown Voltage |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
160 ns |
| Base Part Number |
HGTG20N60 |
| Gate Charge |
142nC |
| Current - Collector Pulsed (Icm) |
280A |
| Td (on/off) @ 25°C |
15ns/73ns |
| Switching Energy |
105μJ (on), 150μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
290W |
| Lead Free |
Lead Free |
ON Semiconductor HGTG20N60B3
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-40°C~150°C TJ |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 20A, 10 Ω, 15V |
| Additional Feature |
LOW CONDUCTION LOSS |
| Factory Lead Time |
44 Weeks |
| Packaging |
Tube |
| Published |
2004 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Turn Off Delay Time |
220 ns |
| HTS Code |
8541.29.00.95 |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Current Rating |
40A |
| Base Part Number |
HGTG20N60 |
| Polarity |
NPN |
| Element Configuration |
Single |
| Power Dissipation |
165W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
25 ns |
| Transistor Application |
POWER CONTROL |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
165W |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
360 ns |
| Gate Charge |
80nC |
| Current - Collector Pulsed (Icm) |
160A |
| Switching Energy |
475μJ (on), 1.05mJ (off) |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG20N60B3_NL
In stock
| Manufacturer |
Rochester Electronics LLC |
|---|---|
| Turn-on Time-Nom (ton) |
45 ns |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC |
| Manufacturer Part Number |
HGTG20N60B3_NL |
| Moisture Sensitivity Level |
NOT SPECIFIED |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Package Description |
TO-247. 3 PIN |
| Part Life Cycle Code |
Active |
| Part Package Code |
TO-247 |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.57 |
| Rohs Code |
Yes |
| Turn-off Time-Nom (toff) |
360 ns |
| Number of Terminals |
3 |
| Surface Mount |
NO |
| Qualification Status |
COMMERCIAL |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| JESD-30 Code |
R-PSFM-T3 |
| Terminal Finish |
NOT SPECIFIED |
| Pbfree Code |
Yes |
| Configuration |
SINGLE |
| Case Connection |
COLLECTOR |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247 |
| Collector Current-Max (IC) |
40 A |
| Additional Feature |
LOW CONDUCTION LOSS |
| Collector-Emitter Voltage-Max |
600 V |
ON Semiconductor HGTG20N60B3D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Max Power Dissipation |
165W |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Turn Off Delay Time |
220 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Reverse Recovery Time |
55ns |
| Max Breakdown Voltage |
600V |
| Element Configuration |
Single |
| Power Dissipation |
165W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
25 ns |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
20ns |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Base Part Number |
HGTG20N60 |
| Current Rating |
20A |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
360 ns |
| Gate Charge |
80nC |
| Current - Collector Pulsed (Icm) |
160A |
| Switching Energy |
475μJ (on), 1.05mJ (off) |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Polarity |
NPN |
| Lead Free |
Lead Free |
ON Semiconductor HGTG20N60C3D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Current Rating |
45A |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Supplier Device Package |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
45A |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Test Conditions |
480V, 20A, 10Ohm, 15V |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
164W |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 20A |
| Power Dissipation |
164W |
| Input Type |
Standard |
| Power - Max |
164W |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
45A |
| Reverse Recovery Time |
32 ns |
| Polarity |
NPN |
| Base Part Number |
HGTG20N60 |
| Gate Charge |
91nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
28ns/151ns |
| Switching Energy |
500μJ (on), 500μJ (off) |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
ON Semiconductor HGTG27N120BN
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 27A, 3 Ω, 15V |
| Turn Off Delay Time |
240 ns |
| Current Rating |
72A |
| Factory Lead Time |
44 Weeks |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
500W |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
360 ns |
| IGBT Type |
NPT |
| Input Type |
Standard |
| Turn On Delay Time |
24 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
72A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
42 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 27A |
| Continuous Collector Current |
72A |
| Power Dissipation |
500W |
| Case Connection |
COLLECTOR |
| Gate Charge |
270nC |
| Current - Collector Pulsed (Icm) |
216A |
| Td (on/off) @ 25°C |
24ns/195ns |
| Switching Energy |
2.2mJ (on), 2.3mJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |