Showing 2773–2784 of 3680 results
ON Semiconductor HGTG30N60A4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Base Part Number |
HGTG30N60 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 30A, 3 Ω, 15V |
| Turn Off Delay Time |
150 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2011 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
463W |
| Current Rating |
75A |
| Mount |
Through Hole |
| Factory Lead Time |
4 Weeks |
| Gate Charge |
225nC |
| Current - Collector Pulsed (Icm) |
240A |
| Input Type |
Standard |
| Turn On Delay Time |
25 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
75A |
| Turn On Time |
35 ns |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 30A |
| Continuous Collector Current |
75A |
| Turn Off Time-Nom (toff) |
238 ns |
| Power Dissipation |
463W |
| Element Configuration |
Single |
| Td (on/off) @ 25°C |
25ns/150ns |
| Switching Energy |
280μJ (on), 240μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Fall Time-Max (tf) |
70ns |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
ON Semiconductor HGTG30N60A4D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Contact Plating |
Tin |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 30A, 3 Ω, 15V |
| Max Power Dissipation |
463W |
| Factory Lead Time |
5 Weeks |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Turn Off Delay Time |
150 ns |
| Current Rating |
30A |
| Turn On Time |
35 ns |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 30A |
| Power Dissipation |
463W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
25 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
12s |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
75A |
| Reverse Recovery Time |
55ns |
| Base Part Number |
HGTG30N60 |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
238 ns |
| Gate Charge |
225nC |
| Current - Collector Pulsed (Icm) |
240A |
| Td (on/off) @ 25°C |
25ns/150ns |
| Switching Energy |
280μJ (on), 240μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG30N60B3
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2013 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 30A, 3 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
HGTG30N60 |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
208W |
| Current Rating |
60A |
| Contact Plating |
Tin |
| Factory Lead Time |
4 Weeks |
| Gate Charge |
170nC |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Max Breakdown Voltage |
600V |
| Turn On Time |
56 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Continuous Collector Current |
60A |
| Turn Off Time-Nom (toff) |
365 ns |
| Current - Collector Pulsed (Icm) |
220A |
| Td (on/off) @ 25°C |
36ns/137ns |
| Polarity |
NPN |
| Switching Energy |
500μJ (on), 680μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
150ns |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
208W |
| Lead Free |
Lead Free |
ON Semiconductor HGTG30N60B3D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Voltage - Rated DC |
600V |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 30A, 3 Ω, 15V |
| Turn Off Delay Time |
137 ns |
| Packaging |
Tube |
| Published |
2011 |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Mounting Type |
Through Hole |
| Mount |
Through Hole |
| Reverse Recovery Time |
55 ns |
| Turn On Time |
56 ns |
| Element Configuration |
Single |
| Power Dissipation |
208W |
| Input Type |
Standard |
| Turn On Delay Time |
36 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
25ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
60A |
| Current Rating |
60A |
| Max Power Dissipation |
208W |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
365 ns |
| Gate Charge |
170nC |
| Current - Collector Pulsed (Icm) |
220A |
| Td (on/off) @ 25°C |
36ns/137ns |
| Switching Energy |
550μJ (on), 680μJ (off) |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Base Part Number |
HGTG30N60 |
| Lead Free |
Lead Free |
ON Semiconductor HGTG30N60C3D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2011 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Turn Off Delay Time |
320 ns |
| Operating Temperature |
-40°C~150°C TJ |
| Max Power Dissipation |
208W |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Mount |
Through Hole |
| Factory Lead Time |
7 Weeks |
| Turn On Time |
85 ns |
| Base Part Number |
HGTG30N60 |
| Element Configuration |
Single |
| Power Dissipation |
208W |
| Input Type |
Standard |
| Turn On Delay Time |
40 ns |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
45ns |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
63A |
| Reverse Recovery Time |
60ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
550 ns |
| Current Rating |
30A |
| Gate Charge |
162nC |
| Current - Collector Pulsed (Icm) |
252A |
| Switching Energy |
1.05mJ (on), 2.5mJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Polarity |
NPN |
| Lead Free |
Lead Free |
ON Semiconductor HGTG30N60C3D_NL
In stock
| Manufacturer |
Rochester Electronics LLC |
|---|---|
| Turn-on Time-Nom (ton) |
85 ns |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC |
| Manufacturer Part Number |
HGTG30N60C3D_NL |
| Moisture Sensitivity Level |
NOT SPECIFIED |
| Package Body Material |
PLASTIC/EPOXY |
| Package Shape |
RECTANGULAR |
| Package Style |
FLANGE MOUNT |
| Part Life Cycle Code |
Active |
| Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Risk Rank |
5.58 |
| Rohs Code |
Yes |
| Turn-off Time-Nom (toff) |
550 ns |
| Surface Mount |
NO |
| Terminal Finish |
NOT SPECIFIED |
| Pbfree Code |
Yes |
| Additional Feature |
LOW CONDUCTION LOSS |
| Terminal Position |
SINGLE |
| Terminal Form |
THROUGH-HOLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
unknown |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
COMMERCIAL |
| Number of Elements |
1 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-247 |
| Collector Current-Max (IC) |
63 A |
| Collector-Emitter Voltage-Max |
600 V |
ON Semiconductor HGTG40N60A4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 40A, 2.2 Ω, 15V |
| Turn Off Delay Time |
145 ns |
| Voltage - Rated DC |
600V |
| Factory Lead Time |
44 Weeks |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Operating Temperature |
-55°C~150°C TJ |
| Max Power Dissipation |
625W |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 40A |
| Continuous Collector Current |
75A |
| Power Dissipation |
625W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
25 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
18ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
75A |
| Turn On Time |
47 ns |
| Current Rating |
40A |
| Element Configuration |
Single |
| Turn Off Time-Nom (toff) |
240 ns |
| Gate Charge |
350nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
25ns/145ns |
| Switching Energy |
400μJ (on), 370μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG5N120BND
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.39g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 5A, 25 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Contact Plating |
Tin |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
167W |
| Current Rating |
21A |
| Packaging |
Tube |
| Power Dissipation |
167W |
| Turn Off Time-Nom (toff) |
357 ns |
| IGBT Type |
NPT |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
21A |
| Reverse Recovery Time |
65 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
600V |
| Turn On Time |
35 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 5A |
| Continuous Collector Current |
21A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Gate Charge |
53nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
22ns/160ns |
| Switching Energy |
450μJ (on), 390μJ (off) |
| Height |
20.82mm |
| Length |
15.87mm |
| Width |
4.82mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor HGTG7N60A4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
34A |
| Test Conditions |
390V, 7A, 25 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
compliant |
| Input Type |
Standard |
| Power - Max |
125W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 7A |
| Gate Charge |
37nC |
| Current - Collector Pulsed (Icm) |
56A |
| Td (on/off) @ 25°C |
11ns/100ns |
| Switching Energy |
55μJ (on), 60μJ (off) |
ON Semiconductor HGTP10N120BN
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
1.8g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Number of Elements |
1 |
| Test Conditions |
960V, 10A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
35A |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
1.2kV |
| Max Power Dissipation |
49.2W |
| Mount |
Through Hole |
| Factory Lead Time |
44 Weeks |
| Continuous Collector Current |
35A |
| Power Dissipation |
298W |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
35A |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Max Breakdown Voltage |
300V |
| Turn On Time |
32 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 10A |
| Turn Off Time-Nom (toff) |
330 ns |
| IGBT Type |
NPT |
| Element Configuration |
Single |
| Gate Charge |
100nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
23ns/165ns |
| Switching Energy |
320μJ (on), 800μJ (off) |
| Height |
9.4mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Case Connection |
COLLECTOR |
| Lead Free |
Lead Free |
ON Semiconductor HGTP12N60A4
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Current-Collector (Ic) (Max) |
54A |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Reach Compliance Code |
compliant |
| Base Part Number |
HGTP12N60 |
| Input Type |
Standard |
| Power - Max |
167W |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
ON Semiconductor HGTP12N60A4D
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Published |
2002 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Weight |
1.8g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
96 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
54A |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Additional Feature |
LOW CONDUCTION LOSS |
| HTS Code |
8541.29.00.95 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
167W |
| Mount |
Through Hole |
| Factory Lead Time |
5 Weeks |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 12A |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
17 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
8ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
54A |
| Reverse Recovery Time |
18 ns |
| Turn On Time |
33 ns |
| Continuous Collector Current |
54A |
| Turn Off Time-Nom (toff) |
180 ns |
| Base Part Number |
HGTP12N60 |
| Gate Charge |
78nC |
| Current - Collector Pulsed (Icm) |
96A |
| Td (on/off) @ 25°C |
17ns/96ns |
| Switching Energy |
55μJ (on), 50μJ (off) |
| Height |
9.4mm |
| Length |
10.67mm |
| Width |
4.83mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
167W |
| Lead Free |
Lead Free |