Showing 2833–2844 of 3680 results
Transistors - IGBTs - Single
ON Semiconductor NGTB20N120IHWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 20A, 10 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
4 Weeks |
Published |
2014 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
341W |
Operating Temperature |
-40°C~175°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
IGBT Type |
Trench Field Stop |
Gate Charge |
150nC |
Power - Max |
341W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.65V |
Max Collector Current |
40A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.65V @ 15V, 20A |
Turn Off Time-Nom (toff) |
395 ns |
Element Configuration |
Single |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
-/170ns |
Switching Energy |
480μJ (off) |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB20N120LWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Surface Mount |
NO |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
235 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Case Connection |
COLLECTOR |
Published |
1999 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
192W |
Pin Count |
3 |
Element Configuration |
Single |
Power Dissipation |
77W |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Gate Charge |
200nC |
Turn On Delay Time |
86 ns |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
40A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
110 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 20A |
Turn Off Time-Nom (toff) |
485 ns |
IGBT Type |
Trench Field Stop |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
86ns/235ns |
Input Type |
Standard |
Switching Energy |
3.1mJ (on), 700μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Power - Max |
192W |
Lead Free |
Lead Free |
ON Semiconductor NGTB20N135IHRWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Contact Plating |
Tin |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
1.35kV |
Test Conditions |
600V, 20A, 10 Ω, 15V |
Element Configuration |
Single |
Factory Lead Time |
11 Weeks |
Published |
1999 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
394W |
Pin Count |
3 |
Operating Temperature |
-40°C~175°C TJ |
Power Dissipation |
394W |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
-/245ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.35kV |
Max Collector Current |
40A |
Voltage - Collector Emitter Breakdown (Max) |
1350V |
Vce(on) (Max) @ Vge, Ic |
2.65V @ 15V, 20A |
IGBT Type |
Trench Field Stop |
Gate Charge |
234nC |
Input Type |
Standard |
Halogen Free |
Halogen Free |
Switching Energy |
600μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB20N60L2TF1G
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
26 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-3PFM, SC-93-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
300V, 20A, 30 Ω, 15V |
Operating Temperature |
175°C TJ |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
64W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
64W |
Halogen Free |
Halogen Free |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
40A |
Reverse Recovery Time |
70 ns |
Vce(on) (Max) @ Vge, Ic |
1.65V @ 15V, 20A |
Gate Charge |
84nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
60ns/193ns |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB25N120FL2WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2014 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 25A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
385W |
Mount |
Through Hole |
Factory Lead Time |
33 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 25A |
Element Configuration |
Single |
Power - Max |
385W |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
50A |
Reverse Recovery Time |
154 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
IGBT Type |
Field Stop |
Gate Charge |
178nC |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
87ns/179ns |
Switching Energy |
1.95mJ (on), 600μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
ON Semiconductor NGTB25N120FL3WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
7 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 25A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2016 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Max Power Dissipation |
349W |
Input Type |
Standard |
Power - Max |
349W |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
100A |
Reverse Recovery Time |
114 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 25A |
IGBT Type |
Trench Field Stop |
Gate Charge |
136nC |
Td (on/off) @ 25°C |
15ns/109ns |
Switching Energy |
1mJ (on), 700μJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB25N120FLWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 25A, 10 Ω, 15V |
Turn Off Delay Time |
228 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Element Configuration |
Single |
Published |
2011 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
192W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Mounting Type |
Through Hole |
Factory Lead Time |
23 Weeks |
Gate Charge |
220nC |
Turn On Delay Time |
91 ns |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
Reverse Recovery Time |
240 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 25A |
IGBT Type |
Trench Field Stop |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
91ns/228ns |
Input Type |
Standard |
Switching Energy |
1.5mJ (on), 950μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Power - Max |
192W |
Lead Free |
Lead Free |
ON Semiconductor NGTB25N120LWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2012 |
Surface Mount |
NO |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 25A, 10 Ω, 15V |
Turn Off Delay Time |
235 ns |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
192W |
Pin Count |
3 |
Element Configuration |
Single |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Gate Charge |
200nC |
Turn On Delay Time |
89 ns |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
117 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 25A |
Turn Off Time-Nom (toff) |
475 ns |
IGBT Type |
Trench Field Stop |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
89ns/235ns |
Input Type |
Standard |
Switching Energy |
3.4mJ (on), 800μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Power - Max |
192W |
Lead Free |
Lead Free |
ON Semiconductor NGTB25N120SWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2014 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 25A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
26 Weeks |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
385W |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Gate Charge |
178nC |
Current - Collector Pulsed (Icm) |
100A |
Power - Max |
385W |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
50A |
Reverse Recovery Time |
154 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 25A |
IGBT Type |
Trench |
Element Configuration |
Single |
Input Type |
Standard |
Td (on/off) @ 25°C |
87ns/179ns |
Switching Energy |
1.95mJ (on), 600μJ (off) |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB30N120FL2WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 30A, 10 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
11 Weeks |
Published |
2006 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
452W |
Operating Temperature |
-55°C~175°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
IGBT Type |
Trench Field Stop |
Gate Charge |
220nC |
Input Type |
Standard |
Power - Max |
452W |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
60A |
Reverse Recovery Time |
240 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
Pin Count |
3 |
Element Configuration |
Single |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
98ns/210ns |
Switching Energy |
2.6mJ (on), 700μJ (off) |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB30N120IHLWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
JESD-609 Code |
e3 |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Pin Count |
3 |
Mounting Type |
Through Hole |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
260W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Published |
2002 |
Element Configuration |
Single |
Current - Collector Pulsed (Icm) |
320A |
Td (on/off) @ 25°C |
-/360ns |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
60A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 30A |
IGBT Type |
Trench Field Stop |
Gate Charge |
420nC |
Input Type |
Standard |
Power - Max |
260W |
Switching Energy |
1mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB30N120IHRWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2013 |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 30A, 10 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
384W |
Pin Count |
3 |
Mounting Type |
Through Hole |
Factory Lead Time |
4 Weeks |
Current - Collector Pulsed (Icm) |
120A |
Power - Max |
384W |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
60A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
IGBT Type |
Trench Field Stop |
Gate Charge |
225nC |
Td (on/off) @ 25°C |
-/230ns |
Switching Energy |
700μJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Halogen Free |
Halogen Free |
Lead Free |
Lead Free |