Showing 2833–2844 of 3680 results

Transistors - IGBTs - Single

ON Semiconductor NGTB20N120IHWG

In stock

SKU: NGTB20N120IHWG-9
Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 10 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

4 Weeks

Published

2014

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Max Power Dissipation

341W

Operating Temperature

-40°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

IGBT Type

Trench Field Stop

Gate Charge

150nC

Power - Max

341W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.65V

Max Collector Current

40A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.65V @ 15V, 20A

Turn Off Time-Nom (toff)

395 ns

Element Configuration

Single

Input Type

Standard

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

-/170ns

Switching Energy

480μJ (off)

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor NGTB20N120LWG

In stock

SKU: NGTB20N120LWG-9
Manufacturer

ON Semiconductor

JESD-609 Code

e3

Surface Mount

NO

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 20A, 10 Ω, 15V

Turn Off Delay Time

235 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Case Connection

COLLECTOR

Published

1999

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

192W

Pin Count

3

Element Configuration

Single

Power Dissipation

77W

Package / Case

TO-247-3

Mounting Type

Through Hole

Gate Charge

200nC

Turn On Delay Time

86 ns

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

40A

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

110 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 20A

Turn Off Time-Nom (toff)

485 ns

IGBT Type

Trench Field Stop

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

86ns/235ns

Input Type

Standard

Switching Energy

3.1mJ (on), 700μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Power - Max

192W

Lead Free

Lead Free

ON Semiconductor NGTB20N135IHRWG

In stock

SKU: NGTB20N135IHRWG-9
Manufacturer

ON Semiconductor

Packaging

Tube

Contact Plating

Tin

Mounting Type

Through Hole

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.35kV

Test Conditions

600V, 20A, 10 Ω, 15V

Element Configuration

Single

Factory Lead Time

11 Weeks

Published

1999

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

394W

Pin Count

3

Operating Temperature

-40°C~175°C TJ

Power Dissipation

394W

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

-/245ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.35kV

Max Collector Current

40A

Voltage - Collector Emitter Breakdown (Max)

1350V

Vce(on) (Max) @ Vge, Ic

2.65V @ 15V, 20A

IGBT Type

Trench Field Stop

Gate Charge

234nC

Input Type

Standard

Halogen Free

Halogen Free

Switching Energy

600μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB20N60L2TF1G

In stock

SKU: NGTB20N60L2TF1G-9
Manufacturer

ON Semiconductor

Factory Lead Time

26 Weeks

Mounting Type

Through Hole

Package / Case

TO-3PFM, SC-93-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

300V, 20A, 30 Ω, 15V

Operating Temperature

175°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

64W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Element Configuration

Single

Input Type

Standard

Power - Max

64W

Halogen Free

Halogen Free

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

70 ns

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 20A

Gate Charge

84nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

60ns/193ns

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB25N120FL2WG

In stock

SKU: NGTB25N120FL2WG-9
Manufacturer

ON Semiconductor

Published

2014

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

385W

Mount

Through Hole

Factory Lead Time

33 Weeks

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

Element Configuration

Single

Power - Max

385W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

50A

Reverse Recovery Time

154 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

IGBT Type

Field Stop

Gate Charge

178nC

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Current - Collector Pulsed (Icm)

100A

Td (on/off) @ 25°C

87ns/179ns

Switching Energy

1.95mJ (on), 600μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

ON Semiconductor NGTB25N120FL3WG

In stock

SKU: NGTB25N120FL3WG-9
Manufacturer

ON Semiconductor

Factory Lead Time

7 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Max Power Dissipation

349W

Input Type

Standard

Power - Max

349W

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

100A

Reverse Recovery Time

114 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

IGBT Type

Trench Field Stop

Gate Charge

136nC

Td (on/off) @ 25°C

15ns/109ns

Switching Energy

1mJ (on), 700μJ (off)

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB25N120FLWG

In stock

SKU: NGTB25N120FLWG-9
Manufacturer

ON Semiconductor

JESD-609 Code

e3

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 10 Ω, 15V

Turn Off Delay Time

228 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Element Configuration

Single

Published

2011

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

192W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Mounting Type

Through Hole

Factory Lead Time

23 Weeks

Gate Charge

220nC

Turn On Delay Time

91 ns

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

240 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 25A

IGBT Type

Trench Field Stop

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

91ns/228ns

Input Type

Standard

Switching Energy

1.5mJ (on), 950μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Power - Max

192W

Lead Free

Lead Free

ON Semiconductor NGTB25N120LWG

In stock

SKU: NGTB25N120LWG-9
Manufacturer

ON Semiconductor

Published

2012

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 25A, 10 Ω, 15V

Turn Off Delay Time

235 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

192W

Pin Count

3

Element Configuration

Single

Package / Case

TO-247-3

Mounting Type

Through Hole

Gate Charge

200nC

Turn On Delay Time

89 ns

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

117 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 25A

Turn Off Time-Nom (toff)

475 ns

IGBT Type

Trench Field Stop

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

89ns/235ns

Input Type

Standard

Switching Energy

3.4mJ (on), 800μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Power - Max

192W

Lead Free

Lead Free

ON Semiconductor NGTB25N120SWG

In stock

SKU: NGTB25N120SWG-9
Manufacturer

ON Semiconductor

Published

2014

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 25A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

26 Weeks

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

385W

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Gate Charge

178nC

Current - Collector Pulsed (Icm)

100A

Power - Max

385W

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

50A

Reverse Recovery Time

154 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 25A

IGBT Type

Trench

Element Configuration

Single

Input Type

Standard

Td (on/off) @ 25°C

87ns/179ns

Switching Energy

1.95mJ (on), 600μJ (off)

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N120FL2WG

In stock

SKU: NGTB30N120FL2WG-9
Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 30A, 10 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

11 Weeks

Published

2006

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

452W

Operating Temperature

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

IGBT Type

Trench Field Stop

Gate Charge

220nC

Input Type

Standard

Power - Max

452W

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

60A

Reverse Recovery Time

240 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 30A

Pin Count

3

Element Configuration

Single

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

98ns/210ns

Switching Energy

2.6mJ (on), 700μJ (off)

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N120IHLWG

In stock

SKU: NGTB30N120IHLWG-9
Manufacturer

ON Semiconductor

JESD-609 Code

e3

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Mounting Type

Through Hole

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

260W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2002

Element Configuration

Single

Current - Collector Pulsed (Icm)

320A

Td (on/off) @ 25°C

-/360ns

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

60A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

420nC

Input Type

Standard

Power - Max

260W

Switching Energy

1mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N120IHRWG

In stock

SKU: NGTB30N120IHRWG-9
Manufacturer

ON Semiconductor

Published

2013

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 30A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

384W

Pin Count

3

Mounting Type

Through Hole

Factory Lead Time

4 Weeks

Current - Collector Pulsed (Icm)

120A

Power - Max

384W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

60A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

225nC

Td (on/off) @ 25°C

-/230ns

Switching Energy

700μJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Halogen Free

Halogen Free

Lead Free

Lead Free