Showing 2845–2856 of 3680 results

Transistors - IGBTs - Single

ON Semiconductor NGTB30N120L2WG

In stock

SKU: NGTB30N120L2WG-9
Manufacturer

ON Semiconductor

Terminal Finish

Tin (Sn)

Mount

Through Hole

Package / Case

TO-247

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.2kV

Packaging

Tube

Published

2012

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Factory Lead Time

26 Weeks

Min Operating Temperature

-55°C

Max Operating Temperature

175°C

Max Power Dissipation

534W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

60A

Reverse Recovery Time

450 ns

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N120LWG

In stock

SKU: NGTB30N120LWG-9
Manufacturer

ON Semiconductor

JESD-609 Code

e3

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Element Configuration

Single

Mounting Type

Through Hole

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

560W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Published

2011

Power Dissipation

560W

IGBT Type

Trench Field Stop

Gate Charge

420nC

Transistor Application

MOTOR CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

60A

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

167 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

Turn Off Time-Nom (toff)

596 ns

Case Connection

COLLECTOR

Input Type

Standard

Current - Collector Pulsed (Icm)

240A

Td (on/off) @ 25°C

136ns/360ns

Switching Energy

4.4mJ (on), 1mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N135IHR1WG

In stock

SKU: NGTB30N135IHR1WG-9
Manufacturer

ON Semiconductor

Factory Lead Time

5 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

1.35kV

Test Conditions

600V, 30A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Packaging

Tube

Published

2015

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

394W

Input Type

Standard

Power - Max

394W

Collector Emitter Voltage (VCEO)

3V

Max Collector Current

60A

Voltage - Collector Emitter Breakdown (Max)

1350V

Vce(on) (Max) @ Vge, Ic

3V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

220nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

-/200ns

Switching Energy

630μA (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N135IHRWG

In stock

SKU: NGTB30N135IHRWG-9
Manufacturer

ON Semiconductor

Pin Count

3

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.35kV

Test Conditions

600V, 30A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Published

2012

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

394W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Factory Lead Time

10 Weeks

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

-/250ns

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.35kV

Max Collector Current

60A

Voltage - Collector Emitter Breakdown (Max)

1350V

Vce(on) (Max) @ Vge, Ic

2.65V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

234nC

Input Type

Standard

Element Configuration

Single

Switching Energy

850μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power - Max

394W

Lead Free

Lead Free

ON Semiconductor NGTB30N60FLWG

In stock

SKU: NGTB30N60FLWG-9
Manufacturer

ON Semiconductor

JESD-609 Code

e3

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Pin Count

3

Mounting Type

Through Hole

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Published

2012

Element Configuration

Single

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

83ns/170ns

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

72 ns

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

170nC

Input Type

Standard

Power - Max

250W

Switching Energy

700μJ (on), 280μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N60FWG

In stock

SKU: NGTB30N60FWG-9
Manufacturer

ON Semiconductor

Pbfree Code

yes

Surface Mount

NO

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2012

Element Configuration

Single

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

167W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Package / Case

TO-247-3

Mounting Type

Through Hole

Current - Collector Pulsed (Icm)

120A

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

72ns

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 30A

IGBT Type

Trench

Gate Charge

170nC

Td (on/off) @ 25°C

81ns/190ns

Switching Energy

650μJ (on), 650μJ (off)

Power Dissipation

167W

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Halogen Free

Halogen Free

Lead Free

Lead Free

ON Semiconductor NGTB30N60IHLWG

In stock

SKU: NGTB30N60IHLWG-9
Manufacturer

ON Semiconductor

Published

2009

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

250W

Pin Count

3

Mounting Type

Through Hole

Factory Lead Time

4 Weeks

Current - Collector Pulsed (Icm)

150A

Power - Max

250W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Reverse Recovery Time

400 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

130nC

Td (on/off) @ 25°C

70ns/140ns

Switching Energy

280μJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Halogen Free

Halogen Free

Lead Free

Lead Free

ON Semiconductor NGTB30N60L2WG

In stock

SKU: NGTB30N60L2WG-9
Manufacturer

ON Semiconductor

Factory Lead Time

11 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

300V, 30A, 30 Ω, 15V

Operating Temperature

175°C TJ

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

225W

Reach Compliance Code

not_compliant

Element Configuration

Single

Input Type

Standard

Power - Max

225W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

100A

Reverse Recovery Time

70 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 30A

Gate Charge

166nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

100ns/390ns

Switching Energy

310μJ (on), 1.14mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB30N65IHL2WG

In stock

SKU: NGTB30N65IHL2WG-9
Manufacturer

ON Semiconductor

Factory Lead Time

12 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 30A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2014

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Power Dissipation

300W

Element Configuration

Single

Input Type

Standard

Power - Max

300W

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

60A

Reverse Recovery Time

430 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 30A

IGBT Type

Trench Field Stop

Gate Charge

135nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

-/145ns

Switching Energy

200μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB35N60FL2WG

In stock

SKU: NGTB35N60FL2WG-9
Manufacturer

ON Semiconductor

Test Conditions

400V, 35A, 10 Ω, 15V

Max Power Dissipation

300W

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Pbfree Code

yes

Published

2014

Packaging

Tube

Element Configuration

Single

Operating Temperature

-55°C~175°C TJ

Collector-Emitter Breakdown Voltage

600V

Weight

38.000013g

Number of Pins

3

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

Factory Lead Time

8 Weeks

Power - Max

300W

Td (on/off) @ 25°C

72ns/132ns

RoHS Status

ROHS3 Compliant

REACH SVHC

No SVHC

Width

5.3mm

Length

16.26mm

Height

21.08mm

Switching Energy

840μJ (on), 280μJ (off)

Current - Collector Pulsed (Icm)

120A

Input Type

Standard

Gate Charge

125nC

IGBT Type

Trench Field Stop

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 35A

Reverse Recovery Time

68 ns

Max Collector Current

70A

Collector Emitter Voltage (VCEO)

600V

Lead Free

Lead Free

ON Semiconductor NGTB35N65FL2WG

In stock

SKU: NGTB35N65FL2WG-9
Manufacturer

ON Semiconductor

Test Conditions

400V, 35A, 10 Ω, 15V

Contact Plating

Tin

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Max Power Dissipation

300W

Factory Lead Time

21 Weeks

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2011

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Collector-Emitter Breakdown Voltage

650V

Element Configuration

Single

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

72ns/132ns

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

70A

Reverse Recovery Time

68 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 35A

IGBT Type

Trench Field Stop

Gate Charge

125nC

Input Type

Standard

Power - Max

300W

Switching Energy

840μJ (on), 280μJ (off)

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB40N120FL2WG

In stock

SKU: NGTB40N120FL2WG-9
Manufacturer

ON Semiconductor

Published

2012

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

535W

Pin Count

3

Mount

Through Hole

Factory Lead Time

13 Weeks

Current - Collector Pulsed (Icm)

200A

Power - Max

535W

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Reverse Recovery Time

240 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

313nC

Td (on/off) @ 25°C

116ns/286ns

Switching Energy

3.4mJ (on), 1.1mJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Polarity/Channel Type

N-CHANNEL

Lead Free

Lead Free