Showing 2857–2868 of 3680 results
Transistors - IGBTs - Single
ON Semiconductor NGTB40N120FL3WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Terminal Finish |
Tin (Sn) |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Part Status |
Active |
Pbfree Code |
yes |
JESD-609 Code |
e3 |
Published |
2013 |
Max Power Dissipation |
454W |
Packaging |
Tube |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
RoHS Status |
ROHS3 Compliant |
REACH SVHC |
No SVHC |
Switching Energy |
1.6mJ (on), 1.1mJ (off) |
Td (on/off) @ 25°C |
18ns/145ns |
Gate Charge |
212nC |
IGBT Type |
Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
136 ns |
Max Collector Current |
160A |
Collector Emitter Voltage (VCEO) |
2.3V |
Power - Max |
454W |
Input Type |
Standard |
Element Configuration |
Single |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N120FLWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pbfree Code |
yes |
Surface Mount |
NO |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2011 |
Power Dissipation |
260W |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
260W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Element Configuration |
Single |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
IGBT Type |
Trench Field Stop |
Input Type |
Standard |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
80A |
Reverse Recovery Time |
200ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
172 ns |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 40A |
Turn Off Time-Nom (toff) |
630 ns |
Gate Charge |
415nC |
Current - Collector Pulsed (Icm) |
160A |
Case Connection |
COLLECTOR |
Td (on/off) @ 25°C |
130ns/385ns |
Switching Energy |
2.6mJ (on), 1.6mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Transistor Application |
POWER CONTROL |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N120IHLWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Power Dissipation |
260W |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2006 |
JESD-609 Code |
e3 |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
260W |
Pin Count |
3 |
Element Configuration |
Single |
Mounting Type |
Through Hole |
Factory Lead Time |
26 Weeks |
Current - Collector Pulsed (Icm) |
320A |
Td (on/off) @ 25°C |
-/360ns |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
80A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 40A |
Turn Off Time-Nom (toff) |
565 ns |
IGBT Type |
Trench Field Stop |
Gate Charge |
420nC |
Input Type |
Standard |
Case Connection |
COLLECTOR |
Switching Energy |
1.4mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Transistor Application |
POWER CONTROL |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N120IHRWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Pin Count |
3 |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Published |
2009 |
JESD-609 Code |
e3 |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
384W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Factory Lead Time |
8 Weeks |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
-/230ns |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
80A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.55V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
225nC |
Input Type |
Standard |
Element Configuration |
Single |
Switching Energy |
950μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Power - Max |
384W |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N120L3WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
18 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
1.2kV |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2009 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Max Power Dissipation |
454W |
Input Type |
Standard |
Power - Max |
454W |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
160A |
Reverse Recovery Time |
86 ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
220nC |
Td (on/off) @ 25°C |
18ns/150ns |
Switching Energy |
1.5mJ (on), 1.5mJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N120S3WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
4 Weeks |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Current-Collector (Ic) (Max) |
160A |
Test Conditions |
600V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Published |
2016 |
Pbfree Code |
yes |
Part Status |
Active |
Input Type |
Standard |
Power - Max |
454W |
Reverse Recovery Time |
163ns |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
212nC |
Td (on/off) @ 25°C |
12ns/145ns |
Switching Energy |
2.2mJ (on), 1.1mJ (off) |
RoHS Status |
ROHS3 Compliant |
ON Semiconductor NGTB40N60FL2WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Element Configuration |
Single |
Factory Lead Time |
4 Weeks |
Published |
2011 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
366W |
Operating Temperature |
-55°C~175°C TJ |
Input Type |
Standard |
Td (on/off) @ 25°C |
84ns/177ns |
Switching Energy |
970μJ (on), 440μJ (off) |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
72 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
170nC |
Current - Collector Pulsed (Icm) |
160A |
Power - Max |
366W |
Polarity/Channel Type |
N-CHANNEL |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N60FLWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2013 |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Weight |
6.500007g |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
257W |
Pin Count |
3 |
Mounting Type |
Through Hole |
Factory Lead Time |
5 Weeks |
Current - Collector Pulsed (Icm) |
160A |
Power - Max |
257W |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
77 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
171nC |
Td (on/off) @ 25°C |
85ns/174ns |
Switching Energy |
890μJ (on), 440μJ (off) |
Input Type |
Standard |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
21.4mm |
Length |
16.25mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Halogen Free |
Halogen Free |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N60IHLWG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2005 |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
250W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Packaging |
Tube |
Pin Count |
3 |
Turn Off Time-Nom (toff) |
230 ns |
IGBT Type |
Trench Field Stop |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
400 ns |
Turn On Time |
110 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
Element Configuration |
Single |
Input Type |
Standard |
Gate Charge |
130nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
70ns/140ns |
Switching Energy |
400μJ (off) |
Height |
21.08mm |
Length |
16.26mm |
Width |
5.3mm |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N60L2WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Test Conditions |
400V, 40A, 10 Ω, 15V |
Max Power Dissipation |
417W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Pbfree Code |
yes |
Published |
2011 |
Packaging |
Tube |
Element Configuration |
Single |
Operating Temperature |
-55°C~175°C TJ |
Collector-Emitter Breakdown Voltage |
600V |
Weight |
38.000013g |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
4 Weeks |
Power - Max |
417W |
Td (on/off) @ 25°C |
98ns/213ns |
RoHS Status |
ROHS3 Compliant |
REACH SVHC |
No SVHC |
Width |
5.3mm |
Length |
16.26mm |
Height |
21.08mm |
Switching Energy |
1.17mJ (on), 280μJ (off) |
Current - Collector Pulsed (Icm) |
160A |
Input Type |
Standard |
Gate Charge |
228nC |
IGBT Type |
Trench Field Stop |
Vce(on) (Max) @ Vge, Ic |
2.61V @ 15V, 40A |
Reverse Recovery Time |
73 ns |
Max Collector Current |
80A |
Collector Emitter Voltage (VCEO) |
600V |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N65FL2WG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Test Conditions |
400V, 40A, 10 Ω, 15V |
Max Power Dissipation |
366W |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Pbfree Code |
yes |
Published |
2011 |
Packaging |
Tube |
Element Configuration |
Single |
Operating Temperature |
-55°C~175°C TJ |
Collector-Emitter Breakdown Voltage |
650V |
Weight |
38.000013g |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
21 Weeks |
Power - Max |
366W |
Td (on/off) @ 25°C |
84ns/177ns |
RoHS Status |
ROHS3 Compliant |
REACH SVHC |
No SVHC |
Width |
5.3mm |
Length |
16.26mm |
Height |
21.08mm |
Switching Energy |
970μJ (on), 440μJ (off) |
Current - Collector Pulsed (Icm) |
160A |
Input Type |
Standard |
Gate Charge |
170nC |
IGBT Type |
Trench Field Stop |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
Reverse Recovery Time |
72 ns |
Max Collector Current |
80A |
Collector Emitter Voltage (VCEO) |
650V |
Lead Free |
Lead Free |
ON Semiconductor NGTB40N65IHRTG
In stock
Manufacturer |
ON Semiconductor |
---|---|
Factory Lead Time |
25 Weeks |
Packaging |
Tube |
Published |
2017 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Terminal Finish |
Tin (Sn) |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
RoHS Status |
ROHS3 Compliant |