Showing 2857–2868 of 3680 results

Transistors - IGBTs - Single

ON Semiconductor NGTB40N120FL3WG

In stock

SKU: NGTB40N120FL3WG-9
Manufacturer

ON Semiconductor

Operating Temperature

-55°C~175°C TJ

Terminal Finish

Tin (Sn)

Moisture Sensitivity Level (MSL)

Not Applicable

Part Status

Active

Pbfree Code

yes

JESD-609 Code

e3

Published

2013

Max Power Dissipation

454W

Packaging

Tube

Test Conditions

600V, 40A, 10 Ω, 15V

Collector-Emitter Breakdown Voltage

1.2kV

Number of Pins

3

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

Factory Lead Time

20 Weeks

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

RoHS Status

ROHS3 Compliant

REACH SVHC

No SVHC

Switching Energy

1.6mJ (on), 1.1mJ (off)

Td (on/off) @ 25°C

18ns/145ns

Gate Charge

212nC

IGBT Type

Trench Field Stop

Voltage - Collector Emitter Breakdown (Max)

1200V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reverse Recovery Time

136 ns

Max Collector Current

160A

Collector Emitter Voltage (VCEO)

2.3V

Power - Max

454W

Input Type

Standard

Element Configuration

Single

Lead Free

Lead Free

ON Semiconductor NGTB40N120FLWG

In stock

SKU: NGTB40N120FLWG-9
Manufacturer

ON Semiconductor

Pbfree Code

yes

Surface Mount

NO

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2011

Power Dissipation

260W

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

260W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Element Configuration

Single

Package / Case

TO-247-3

Mounting Type

Through Hole

IGBT Type

Trench Field Stop

Input Type

Standard

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Reverse Recovery Time

200ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

172 ns

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 40A

Turn Off Time-Nom (toff)

630 ns

Gate Charge

415nC

Current - Collector Pulsed (Icm)

160A

Case Connection

COLLECTOR

Td (on/off) @ 25°C

130ns/385ns

Switching Energy

2.6mJ (on), 1.6mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

ON Semiconductor NGTB40N120IHLWG

In stock

SKU: NGTB40N120IHLWG-9
Manufacturer

ON Semiconductor

Power Dissipation

260W

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Published

2006

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

260W

Pin Count

3

Element Configuration

Single

Mounting Type

Through Hole

Factory Lead Time

26 Weeks

Current - Collector Pulsed (Icm)

320A

Td (on/off) @ 25°C

-/360ns

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.35V @ 15V, 40A

Turn Off Time-Nom (toff)

565 ns

IGBT Type

Trench Field Stop

Gate Charge

420nC

Input Type

Standard

Case Connection

COLLECTOR

Switching Energy

1.4mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

ON Semiconductor NGTB40N120IHRWG

In stock

SKU: NGTB40N120IHRWG-9
Manufacturer

ON Semiconductor

Pin Count

3

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Published

2009

JESD-609 Code

e3

Packaging

Tube

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

384W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Factory Lead Time

8 Weeks

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

-/230ns

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

80A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.55V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

225nC

Input Type

Standard

Element Configuration

Single

Switching Energy

950μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Power - Max

384W

Lead Free

Lead Free

ON Semiconductor NGTB40N120L3WG

In stock

SKU: NGTB40N120L3WG-9
Manufacturer

ON Semiconductor

Factory Lead Time

18 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

1.2kV

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2009

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Max Power Dissipation

454W

Input Type

Standard

Power - Max

454W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

160A

Reverse Recovery Time

86 ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

220nC

Td (on/off) @ 25°C

18ns/150ns

Switching Energy

1.5mJ (on), 1.5mJ (off)

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

ON Semiconductor NGTB40N120S3WG

In stock

SKU: NGTB40N120S3WG-9
Manufacturer

ON Semiconductor

Factory Lead Time

4 Weeks

Mounting Type

Through Hole

Package / Case

TO-247-3

Current-Collector (Ic) (Max)

160A

Test Conditions

600V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Published

2016

Pbfree Code

yes

Part Status

Active

Input Type

Standard

Power - Max

454W

Reverse Recovery Time

163ns

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

212nC

Td (on/off) @ 25°C

12ns/145ns

Switching Energy

2.2mJ (on), 1.1mJ (off)

RoHS Status

ROHS3 Compliant

ON Semiconductor NGTB40N60FL2WG

In stock

SKU: NGTB40N60FL2WG-9
Manufacturer

ON Semiconductor

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Weight

38.000013g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 40A, 10 Ω, 15V

Element Configuration

Single

Factory Lead Time

4 Weeks

Published

2011

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Terminal Finish

Tin (Sn)

Max Power Dissipation

366W

Operating Temperature

-55°C~175°C TJ

Input Type

Standard

Td (on/off) @ 25°C

84ns/177ns

Switching Energy

970μJ (on), 440μJ (off)

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

72 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

170nC

Current - Collector Pulsed (Icm)

160A

Power - Max

366W

Polarity/Channel Type

N-CHANNEL

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor NGTB40N60FLWG

In stock

SKU: NGTB40N60FLWG-9
Manufacturer

ON Semiconductor

Published

2013

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

257W

Pin Count

3

Mounting Type

Through Hole

Factory Lead Time

5 Weeks

Current - Collector Pulsed (Icm)

160A

Power - Max

257W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

77 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

IGBT Type

Trench Field Stop

Gate Charge

171nC

Td (on/off) @ 25°C

85ns/174ns

Switching Energy

890μJ (on), 440μJ (off)

Input Type

Standard

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

21.4mm

Length

16.25mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Halogen Free

Halogen Free

Lead Free

Lead Free

ON Semiconductor NGTB40N60IHLWG

In stock

SKU: NGTB40N60IHLWG-9
Manufacturer

ON Semiconductor

Published

2005

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Weight

6.500007g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 40A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

250W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Packaging

Tube

Pin Count

3

Turn Off Time-Nom (toff)

230 ns

IGBT Type

Trench Field Stop

Power - Max

250W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

400 ns

Turn On Time

110 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 40A

Element Configuration

Single

Input Type

Standard

Gate Charge

130nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

70ns/140ns

Switching Energy

400μJ (off)

Height

21.08mm

Length

16.26mm

Width

5.3mm

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

ON Semiconductor NGTB40N60L2WG

In stock

SKU: NGTB40N60L2WG-9
Manufacturer

ON Semiconductor

Test Conditions

400V, 40A, 10 Ω, 15V

Max Power Dissipation

417W

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Pbfree Code

yes

Published

2011

Packaging

Tube

Element Configuration

Single

Operating Temperature

-55°C~175°C TJ

Collector-Emitter Breakdown Voltage

600V

Weight

38.000013g

Number of Pins

3

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

Factory Lead Time

4 Weeks

Power - Max

417W

Td (on/off) @ 25°C

98ns/213ns

RoHS Status

ROHS3 Compliant

REACH SVHC

No SVHC

Width

5.3mm

Length

16.26mm

Height

21.08mm

Switching Energy

1.17mJ (on), 280μJ (off)

Current - Collector Pulsed (Icm)

160A

Input Type

Standard

Gate Charge

228nC

IGBT Type

Trench Field Stop

Vce(on) (Max) @ Vge, Ic

2.61V @ 15V, 40A

Reverse Recovery Time

73 ns

Max Collector Current

80A

Collector Emitter Voltage (VCEO)

600V

Lead Free

Lead Free

ON Semiconductor NGTB40N65FL2WG

In stock

SKU: NGTB40N65FL2WG-9
Manufacturer

ON Semiconductor

Test Conditions

400V, 40A, 10 Ω, 15V

Max Power Dissipation

366W

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Pbfree Code

yes

Published

2011

Packaging

Tube

Element Configuration

Single

Operating Temperature

-55°C~175°C TJ

Collector-Emitter Breakdown Voltage

650V

Weight

38.000013g

Number of Pins

3

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

Factory Lead Time

21 Weeks

Power - Max

366W

Td (on/off) @ 25°C

84ns/177ns

RoHS Status

ROHS3 Compliant

REACH SVHC

No SVHC

Width

5.3mm

Length

16.26mm

Height

21.08mm

Switching Energy

970μJ (on), 440μJ (off)

Current - Collector Pulsed (Icm)

160A

Input Type

Standard

Gate Charge

170nC

IGBT Type

Trench Field Stop

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 40A

Reverse Recovery Time

72 ns

Max Collector Current

80A

Collector Emitter Voltage (VCEO)

650V

Lead Free

Lead Free

ON Semiconductor NGTB40N65IHRTG

In stock

SKU: NGTB40N65IHRTG-9
Manufacturer

ON Semiconductor

Factory Lead Time

25 Weeks

Packaging

Tube

Published

2017

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Terminal Finish

Tin (Sn)

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

RoHS Status

ROHS3 Compliant