Showing 2869–2880 of 3680 results
ON Semiconductor NGTB40N65IHRWG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Published |
2009 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
405W |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 40A |
| IGBT Type |
Field Stop |
| Gate Charge |
190nC |
| Current - Collector Pulsed (Icm) |
160A |
| Switching Energy |
420μJ (off) |
| RoHS Status |
RoHS Compliant |
ON Semiconductor NGTB50N120FL2WG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
6.500007g |
| Collector-Emitter Breakdown Voltage |
1.2kV |
| Test Conditions |
600V, 50A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2008 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
535W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Through Hole |
| Factory Lead Time |
7 Weeks |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
118ns/282ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.2kV |
| Max Collector Current |
100A |
| Reverse Recovery Time |
256 ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
311nC |
| Input Type |
Standard |
| Element Configuration |
Single |
| Switching Energy |
4.4mJ (on), 1.4mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
21.4mm |
| Length |
16.25mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Power - Max |
535W |
| Lead Free |
Lead Free |
ON Semiconductor NGTB50N60FL2WG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
5 Weeks |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~175°C TJ |
| Max Power Dissipation |
417W |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
220nC |
| Power - Max |
417W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
94 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
100ns/237ns |
| Switching Energy |
1.5mJ (on), 460μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor NGTB50N60FLWG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| JESD-609 Code |
e3 |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Turn Off Delay Time |
292 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Power Dissipation |
223W |
| Published |
2013 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
223W |
| Pin Count |
3 |
| Element Configuration |
Single |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Current - Collector Pulsed (Icm) |
200A |
| Turn On Delay Time |
116 ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
85ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
310nC |
| Td (on/off) @ 25°C |
116ns/292ns |
| Switching Energy |
1.1mJ (on), 600μJ (off) |
| Input Type |
Standard |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
21.08mm |
| Length |
16.26mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Halogen Free |
Halogen Free |
| Lead Free |
Lead Free |
ON Semiconductor NGTB50N60FWG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Turn Off Delay Time |
285 ns |
| Packaging |
Tube |
| Published |
2011 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
223W |
| Surface Mount |
NO |
| Package / Case |
TO-247 |
| Reverse Recovery Time |
77 ns |
| Gate-Emitter Voltage-Max |
20V |
| Power Dissipation |
223W |
| Turn On Delay Time |
117 ns |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
100A |
| Pin Count |
3 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
21.4mm |
| Length |
16.25mm |
| Width |
5.3mm |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
ON Semiconductor NGTB50N60SWG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
5 Weeks |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Not For New Designs |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
135nC |
| Input Type |
Standard |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.6V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
376ns |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 50A |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Element Configuration |
Single |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
70ns/144ns |
| Switching Energy |
600μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor NGTB50N65FL2WAG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Current-Collector (Ic) (Max) |
160A |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
417W |
| Reverse Recovery Time |
94ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| IGBT Type |
Field Stop |
| Gate Charge |
215nC |
| Td (on/off) @ 25°C |
23ns/123ns |
| Switching Energy |
420μJ (on), 550μJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor NGTB50N65FL2WG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Published |
2015 |
| JESD-609 Code |
e3 |
| Packaging |
Tube |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Max Power Dissipation |
417W |
| Mount |
Through Hole |
| Factory Lead Time |
18 Weeks |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
220nC |
| Power - Max |
417W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
94 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| Element Configuration |
Single |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
100ns/237ns |
| Switching Energy |
1.5mJ (on), 460μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
ON Semiconductor NGTB50N65S1WG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
36 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
140A |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Input Type |
Standard |
| Power - Max |
300W |
| Reverse Recovery Time |
70ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.45V @ 15V, 50A |
| IGBT Type |
Trench |
| Gate Charge |
128nC |
| Td (on/off) @ 25°C |
75ns/128ns |
| Switching Energy |
1.25mJ (on), 530μJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor NGTB75N65FL2WAG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Current-Collector (Ic) (Max) |
200A |
| Test Conditions |
400V, 75A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
536W |
| Reverse Recovery Time |
90ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 75A |
| IGBT Type |
Field Stop |
| Gate Charge |
310nC |
| Td (on/off) @ 25°C |
23ns/157ns |
| Switching Energy |
610μJ (on), 1.2mJ (off) |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
ON Semiconductor NGTB75N65FL2WG
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 75A, 10 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
24 Weeks |
| Max Power Dissipation |
595W |
| Terminal Finish |
Tin (Sn) |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
595W |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
100A |
| Reverse Recovery Time |
80 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
310nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
110ns/270ns |
| Switching Energy |
1.5mJ (on), 1mJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor NGTD13T65F2SWK
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
4 Weeks |
| Mounting Type |
Surface Mount |
| Package / Case |
Die |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Current - Collector Pulsed (Icm) |
120A |
| RoHS Status |
ROHS3 Compliant |