Showing 2905–2916 of 3680 results
Transistors - IGBTs - Single
ON Semiconductor SGF23N60UFTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Published |
2013 |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3 Full Pack |
Weight |
6.962g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
300V, 12A, 23 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Max Power Dissipation |
75W |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
600V |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Turn On Time |
55 ns |
Base Part Number |
SG*23N60 |
Element Configuration |
Single |
Power Dissipation |
75W |
Case Connection |
ISOLATED |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
23A |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 12A |
Turn Off Time-Nom (toff) |
320 ns |
Current Rating |
12A |
Current - Collector Pulsed (Icm) |
92A |
Td (on/off) @ 25°C |
17ns/60ns |
Switching Energy |
115μJ (on), 135μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
250ns |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
JESD-30 Code |
R-PSFM-T3 |
Lead Free |
Lead Free |
ON Semiconductor SGF40N60UFTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3 Full Pack |
Supplier Device Package |
TO-3PF |
Current-Collector (Ic) (Max) |
40A |
Test Conditions |
300V, 20A, 10Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Base Part Number |
SG*40N60 |
Input Type |
Standard |
Power - Max |
100W |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 20A |
Gate Charge |
97nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
15ns/65ns |
Switching Energy |
160μJ (on), 200μJ (off) |
ON Semiconductor SGF5N150UFTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3 Full Pack |
Number of Pins |
3 |
Weight |
6.962g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.5kV |
Number of Elements |
1 |
Test Conditions |
600V, 5A, 10 Ω, 10V |
Turn Off Delay Time |
30 ns |
Max Power Dissipation |
62.5W |
Operating Temperature |
-55°C~150°C TJ |
Published |
2003 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
1.5kV |
Mount |
Through Hole |
Factory Lead Time |
44 Weeks |
Vce(on) (Max) @ Vge, Ic |
5.5V @ 10V, 5A |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Turn On Delay Time |
10 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.5kV |
Max Collector Current |
10A |
Voltage - Collector Emitter Breakdown (Max) |
1500V |
Turn On Time |
25 ns |
Turn Off Time-Nom (toff) |
100 ns |
Gate Charge |
30nC |
Current Rating |
5A |
Current - Collector Pulsed (Icm) |
20A |
Td (on/off) @ 25°C |
10ns/30ns |
Switching Energy |
190μJ (on), 100μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
4V |
Fall Time-Max (tf) |
120ns |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Power Dissipation |
62.5W |
Lead Free |
Lead Free |
ON Semiconductor SGH20N60RUFDTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Number of Pins |
3 |
Weight |
6.401g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
HTS Code |
8541.29.00.95 |
Test Conditions |
300V, 20A, 10 Ω, 15V |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Reverse Recovery Time |
95 ns |
Max Power Dissipation |
195W |
Element Configuration |
Single |
Power Dissipation |
195W |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
32A |
Turn On Time |
81 ns |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 20A |
Voltage - Rated DC |
600V |
Turn Off Time-Nom (toff) |
363 ns |
Gate Charge |
55nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
30ns/48ns |
Switching Energy |
524μJ (on), 473μJ (off) |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Current Rating |
20A |
Lead Free |
Lead Free |
ON Semiconductor SGH30N60RUFTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Max Power Dissipation |
235W |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
300V, 30A, 7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Rated DC |
600V |
Mount |
Through Hole |
Element Configuration |
Single |
Current Rating |
30A |
Power Dissipation |
235W |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
48A |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 30A |
Gate Charge |
85nC |
Current - Collector Pulsed (Icm) |
90A |
Td (on/off) @ 25°C |
30ns/54ns |
Switching Energy |
919μJ (on), 814μJ (off) |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor SGH40N60UFDM1TU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Package / Case |
TO-3P-3, SC-65-3 |
Supplier Device Package |
TO-3P |
Current-Collector (Ic) (Max) |
40A |
Test Conditions |
300V, 20A, 10Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Part Status |
Obsolete |
Mounting Type |
Through Hole |
Input Type |
Standard |
Base Part Number |
SG*40N60 |
Power - Max |
160W |
Reverse Recovery Time |
60ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 20A |
Gate Charge |
97nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
15ns/65ns |
Switching Energy |
160μJ (on), 200μJ (off) |
ON Semiconductor SGL160N60UFTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-264-3, TO-264AA |
Supplier Device Package |
TO-264-3 |
Current-Collector (Ic) (Max) |
160A |
Test Conditions |
300V, 80A, 3.9Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Mounting Type |
Through Hole |
Input Type |
Standard |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power - Max |
250W |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 80A |
Gate Charge |
345nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
40ns/90ns |
Switching Energy |
2.5mJ (on), 1.76mJ (off) |
ON Semiconductor SGL40N150DTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Current Rating |
40A |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Collector-Emitter Breakdown Voltage |
1.5kV |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Rated DC |
1.5kV |
Max Power Dissipation |
200W |
Mount |
Through Hole |
Power Dissipation |
200W |
Element Configuration |
Single |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
1.5kV |
Max Collector Current |
40A |
Reverse Recovery Time |
300 ns |
Voltage - Collector Emitter Breakdown (Max) |
1500V |
Vce(on) (Max) @ Vge, Ic |
4.7V @ 15V, 40A |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
120A |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
ON Semiconductor SGL50N60RUFDTU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Contact Plating |
Tin |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-264-3, TO-264AA |
Number of Pins |
3 |
Weight |
6.756g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
300V, 50A, 5.9 Ω, 15V |
Current Rating |
40A |
Factory Lead Time |
5 Weeks |
Packaging |
Tube |
Published |
2013 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
HTS Code |
8541.29.00.95 |
Voltage - Rated DC |
100V |
Max Power Dissipation |
250W |
Turn Off Delay Time |
66 ns |
Element Configuration |
Single |
Gate Charge |
145nC |
Current - Collector Pulsed (Icm) |
150A |
Turn On Delay Time |
26 ns |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
100ns |
Turn On Time |
119 ns |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 50A |
Continuous Collector Current |
80A |
Turn Off Time-Nom (toff) |
329 ns |
Power Dissipation |
250W |
Input Type |
Standard |
Td (on/off) @ 25°C |
26ns/66ns |
Switching Energy |
1.68mJ (on), 1.03mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
8V |
Fall Time-Max (tf) |
160ns |
Height |
26mm |
Length |
20mm |
Width |
5mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
ON Semiconductor SGL60N90DG3TU
In stock
Manufacturer |
ON Semiconductor |
---|---|
Part Status |
Obsolete |
Package / Case |
TO-264-3, TO-264AA |
Supplier Device Package |
TO-264-3 |
Current-Collector (Ic) (Max) |
60A |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2002 |
Mounting Type |
Through Hole |
Input Type |
Standard |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Power - Max |
180W |
Reverse Recovery Time |
1.5μs |
Voltage - Collector Emitter Breakdown (Max) |
900V |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 60A |
IGBT Type |
Trench |
Gate Charge |
260nC |
Current - Collector Pulsed (Icm) |
120A |