Showing 2941–2952 of 3680 results
ON Semiconductor TIG067SS-TL-2W
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| ECCN Code |
EAR99 |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SOIC (0.154, 3.90mm Width) |
| Number of Pins |
8 |
| Collector-Emitter Breakdown Voltage |
400V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2016 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
10 Weeks |
| Max Power Dissipation |
1.2W |
| Terminal Finish |
Tin (Sn) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Pin Count |
8 |
| Input Type |
Standard |
| Halogen Free |
Halogen Free |
| Collector Emitter Voltage (VCEO) |
5V |
| Max Breakdown Voltage |
400V |
| Vce(on) (Max) @ Vge, Ic |
5V @ 4V, 150A |
| Current - Collector Pulsed (Icm) |
150A |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor TIG074E8-TL-H
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Package / Case |
8-SMD, Flat Lead |
| Number of Pins |
8 |
| Collector-Emitter Breakdown Voltage |
400V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2014 |
| JESD-609 Code |
e6 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin/Bismuth (Sn/Bi) |
| Pin Count |
8 |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
400V |
| Max Collector Current |
100A |
| Vce(on) (Max) @ Vge, Ic |
5.4V @ 2.5V, 100A |
| Current - Collector Pulsed (Icm) |
150A |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ON Semiconductor TIG111BF
In stock
| Manufacturer |
ON Semiconductor |
|---|---|
| Test Conditions |
300V, 10A, 30 Ω, 15V |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 Full Pack |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Pin Count |
3 |
| Mount |
Through Hole |
| Packaging |
Bulk |
| Published |
2010 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| HTS Code |
8541.29.00.95 |
| Max Power Dissipation |
2W |
| Operating Temperature (Max.) |
150°C |
| Element Configuration |
Single |
| Turn On Time |
250 ns |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 10A |
| Power - Max |
2W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
23A |
| JEDEC-95 Code |
TO-220AB |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
360 ns |
| IGBT Type |
NPT |
| Gate Charge |
63nC |
| Current - Collector Pulsed (Icm) |
92A |
| Td (on/off) @ 25°C |
43ns/175ns |
| Gate-Emitter Thr Voltage-Max |
6V |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
onsemi AFGHL25T120RHD
In stock
| Manufacturer |
onsemi |
|---|---|
| Power - Max |
261 W |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGHL25 |
| Mfr |
onsemi |
| Product Status |
Obsolete |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Input Type |
Standard |
| Mounting Type |
Through Hole |
| Current - Collector (Ic) (Max) |
48 A |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Test Condition |
600V, 25A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 25A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
189 nC |
| Current - Collector Pulsed (Icm) |
100 A |
| Td (on/off) @ 25°C |
27ns/118ns |
| Switching Energy |
1.94mJ (on), 770μJ (off) |
| Reverse Recovery Time (trr) |
159 ns |
onsemi AFGHL40T120RLD
In stock
| Manufacturer |
+ 175 C |
|---|---|
| Subcategory |
Si |
| Package / Case |
TO-247-3 |
| Surface Mount |
TO-247-3 |
| Transistor Element Material |
Through Hole |
| Base Product Number |
onsemi |
| Brand |
onsemi |
| Maximum Operating Temperature |
onsemi |
| Mfr |
– 55 C |
| Minimum Operating Temperature |
Tube |
| Package Type |
Not For New Designs |
| Qualification |
Details |
| Operating Temperature |
Tube |
| Additional Feature |
IGBTs |
| Mounting Type |
Through Hole |
| Power Dissipation |
Standard |
| Number of Elements |
Single |
| Input Type |
529 W |
| Polarity/Channel Type |
IGBT Transistors |
| JEDEC-95 Code |
1200 V |
| Voltage - Collector Emitter Breakdown (Max) |
48 A |
| Power Dissipation-Max (Abs) |
600V, 40A, 5Ohm, 15V |
| Test Condition |
2.1V @ 15V, 40A |
| Continuous Collector Current |
Trench Field Stop |
| Collector-Emitter Voltage-Max |
395 nC |
| Gate Charge |
160 A |
| Current - Collector Pulsed (Icm) |
48ns/208ns |
| Td (on/off) @ 25°C |
3.4mJ (on), 1.2mJ (off) |
| Gate-Emitter Thr Voltage-Max |
195 ns |
| Reverse Recovery Time (trr) |
IGBT Transistors |
onsemi AFGHL40T65RQDN
In stock
| Manufacturer |
onsemi |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
TO-247-3 |
| Base Product Number |
onsemi |
| Brand |
onsemi |
| Maximum Operating Temperature |
onsemi |
| Minimum Operating Temperature |
Tube |
| Package Type |
Active |
| Operating Temperature |
Tube |
| Packaging |
Automotive, AEC-Q101 |
| Additional Feature |
IGBTs |
| Power Dissipation |
Standard |
| Input Type |
288 W |
| Polarity/Channel Type |
IGBT Transistors |
| JEDEC-95 Code |
650 V |
| Voltage - Collector Emitter Breakdown (Max) |
46 A |
| Power Dissipation-Max (Abs) |
400V, 40A, 2.5Ohm, 15V |
| Test Condition |
1.82V @ 15V, 40A |
| Collector Current-Max (IC) |
46 |
| Continuous Collector Current |
Field Stop |
| Collector-Emitter Voltage-Max |
47 nC |
| Gate Charge |
160 A |
| Current - Collector Pulsed (Icm) |
26ns/77ns |
| Td (on/off) @ 25°C |
1.14mJ (on), 740μJ (off) |
| Gate-Emitter Thr Voltage-Max |
44 ns |
| Reverse Recovery Time (trr) |
IGBT Transistors |
onsemi AFGHL40T65SQD
In stock
| Manufacturer |
onsemi |
|---|---|
| Maximum Gate Emitter Voltage |
±30.0V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGHL40 |
| Brand |
onsemi |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
80 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Test Conditions |
400V, 20A, 6Ohm, 15V |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
onsemi |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247 |
| Pd - Power Dissipation |
238 W |
| Product Status |
Active |
| Maximum Collector Emitter Voltage |
650 V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
238 |
| Input Type |
Standard |
| Power - Max |
238 W |
| Product Type |
IGBT Transistors |
| Series |
Automotive, AEC-Q101 |
| Subcategory |
IGBTs |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| Continuous Collector Current |
80 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
68 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
15ns/70ns |
| Switching Energy |
250μJ (on), 90μJ (off) |
| Reverse Recovery Time (trr) |
28 ns |
| Product Category |
IGBT Transistors |
onsemi AFGHL75T65SQDC
In stock
| Manufacturer |
onsemi |
|---|---|
| Maximum Gate Emitter Voltage |
±20V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGHL75 |
| Brand |
onsemi |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
80 A |
| Factory Pack QuantityFactory Pack Quantity |
450 |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
onsemi |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Package Type |
TO-247 |
| Pd - Power Dissipation |
375 W |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 75A, 4.7Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
375W |
| Input Type |
Standard |
| Power - Max |
375 W |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
Automotive, AEC-Q101 |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Continuous Collector Current |
75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
139 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
24ns/107.2ns |
| Switching Energy |
1.68mJ (on), 1.11mJ (off) |
| Product Category |
IGBT Transistors |
onsemi AFGY100T65SPD
In stock
| Manufacturer |
onsemi |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGY100 |
| Brand |
onsemi |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
120 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 100A, 5Ohm, 15V |
| Maximum Gate Emitter Voltage |
±20V |
| Mfr |
onsemi |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Package Type |
TO-247 |
| Pd - Power Dissipation |
660 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Series |
Automotive, AEC-Q101 |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
660W |
| Input Type |
Standard |
| Power - Max |
660 W |
| Product Type |
IGBT Transistors |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 100A |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Continuous Collector Current |
100A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
109 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
36ns/78ns |
| Switching Energy |
5.1mJ (on), 2.7mJ (off) |
| Reverse Recovery Time (trr) |
105 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |
onsemi AFGY120T65SPD
In stock
| Manufacturer |
onsemi |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
AFGY120 |
| Brand |
onsemi |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
160 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 120A, 5Ohm, 15V |
| Maximum Gate Emitter Voltage |
±20V |
| Mfr |
onsemi |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Package Type |
TO-247 |
| Pd - Power Dissipation |
714 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Series |
Automotive, AEC-Q101 |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
714W |
| Input Type |
Standard |
| Power - Max |
714 W |
| Product Type |
IGBT Transistors |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 120A |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Continuous Collector Current |
120A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
125 nC |
| Current - Collector Pulsed (Icm) |
360 A |
| Td (on/off) @ 25°C |
40ns/80ns |
| Switching Energy |
6.6mJ (on), 3.8mJ (off) |
| Reverse Recovery Time (trr) |
107 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |
onsemi AFGY160T65SPD-B4
In stock
| Manufacturer |
onsemi |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Mounting Style |
Through Hole |
| Base Product Number |
AFGY160 |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
onsemi |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Series |
Automotive, AEC-Q100 |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
882 W |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Current - Collector (Ic) (Max) |
240 A |
| Test Condition |
400V, 160A, 5Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.05V @ 15V, 160A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
245 nC |
| Current - Collector Pulsed (Icm) |
480 A |
| Td (on/off) @ 25°C |
53ns/98ns |
| Switching Energy |
12.4mJ (on), 5.7mJ (off) |
| Reverse Recovery Time (trr) |
132 ns |
onsemi FGB3236-F085C
In stock
| Manufacturer |
onsemi |
|---|---|
| Subcategory |
IGBTs |
| Supplier Device Package |
D2PAK (TO-263) |
| Brand |
onsemi |
| Mfr |
onsemi |
| Package |
Tape & Reel (TR) |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Reel |
| Mounting Type |
Surface Mount |
| Power - Max |
187 W |
| Input Type |
Logic |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
360 V |
| Current - Collector (Ic) (Max) |
44 A |
| Vce(on) (Max) @ Vge, Ic |
1.4V @ 4V, 6A |
| Gate Charge |
20 nC |
| Td (on/off) @ 25°C |
0.65μs/5.4μs |
| Reverse Recovery Time (trr) |
1.7 μs |
| Product Category |
IGBT Transistors |