Manufacturer	onsemi
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2Pak)
Mfr	onsemi
Package	Tape & Reel (TR)
Product Status	Active
Operating Temperature	-40°C ~ 175°C (TJ)
Input Type	Logic
Power - Max	150 W
Voltage - Collector Emitter Breakdown (Max)	450 V
Current - Collector (Ic) (Max)	41 A
Test Condition	300V, 6.5A, 1kOhm, 5V
Vce(on) (Max) @ Vge, Ic	1.25V @ 4V, 6A
Gate Charge	23 nC
Td (on/off) @ 25°C	900ns/5.4μs
Reverse Recovery Time (trr)	2.6 μs

Manufacturer	onsemi
Maximum Gate Emitter Voltage	20V
Package / Case	TO-247-4
Supplier Device Package	TO-247-4L
Brand	onsemi
Collector- Emitter Voltage VCEO Max	1.2 kV
Current-Collector (Ic) (Max)	80 A
Factory Pack QuantityFactory Pack Quantity	30
Product Status	Active
Mounting Type	Through Hole
Maximum Operating Temperature	+ 175 C
Mfr	onsemi
Minimum Operating Temperature	– 55 C
Mounting Styles	Through Hole
Package	Tube
Package Type	TO-247
Pd - Power Dissipation	306 W
Maximum Collector Emitter Voltage	1200 V
Test Conditions	600V, 40A, 10Ohm, 15V
Voltage - Collector Emitter Breakdown (Max)	1200 V
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 40A
Technology	Si
Configuration	Single
Power Dissipation	306W
Input Type	Standard
Power - Max	306 W
Product Type	IGBT Transistors
Operating Temperature	-55°C ~ 175°C (TJ)
Subcategory	IGBTs
Continuous Collector Current	80A
IGBT Type	Trench Field Stop
Gate Charge	227 nC
Current - Collector Pulsed (Icm)	160 A
Td (on/off) @ 25°C	42ns/218ns
Switching Energy	1.04mJ (on), 1.35mJ (off)
Reverse Recovery Time (trr)	59 ns
Product Category	IGBT Transistors

Manufacturer	onsemi
Test Conditions	400V, 40A, 6Ohm, 15V
Supplier Device Package	TO-247-3
Brand	onsemi
Collector- Emitter Voltage VCEO Max	650 V
Current-Collector (Ic) (Max)	60 A
Factory Pack QuantityFactory Pack Quantity	30
Maximum Gate Emitter Voltage	20V
Maximum Operating Temperature	+ 175 C
Maximum Collector Emitter Voltage	650 V
Mfr	onsemi
Minimum Operating Temperature	– 55 C
Mounting Styles	Through Hole
Package Type	TO-247-3L
Pd - Power Dissipation	238 W
Product Status	Active
Package / Case	TO-247-3
Mounting Type	Through Hole
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 40A
Continuous Collector Current	60
Configuration	Single
Power Dissipation	238
Input Type	Standard
Power - Max	238 W
Product Type	IGBT Transistors
Voltage - Collector Emitter Breakdown (Max)	650 V
Subcategory	IGBTs
Operating Temperature	-55°C ~ 175°C (TJ)
IGBT Type	Trench Field Stop
Gate Charge	80 nC
Current - Collector Pulsed (Icm)	160 A
Td (on/off) @ 25°C	18ns/75ns
Switching Energy	880μJ (on), 490μJ (off)
Reverse Recovery Time (trr)	86 ns
Technology	Si
Product Category	IGBT Transistors

Manufacturer	+ 175 C
Configuration	268W
Package / Case	TO-247-3
Surface Mount	TO-247-3
Transistor Element Material	Through Hole
Base Product Number	onsemi
Brand	onsemi
Maximum Operating Temperature	onsemi
Mfr	– 55 C
Minimum Operating Temperature	Tube
Package Shape	TO-247-3L
Package Type	Active
Additional Feature	IGBTs
Subcategory	Si
Number of Elements	Single
Mounting Type	Through Hole
Input Type	268 W
Power Dissipation	Standard
Polarity/Channel Type	IGBT Transistors
JEDEC-95 Code	650 V
Voltage - Collector Emitter Breakdown (Max)	80 A
Current - Collector (Ic) (Max)	1.45V
Power Dissipation-Max (Abs)	400V, 50A, 6Ohm, 15V
Test Condition	1.8V @ 15V, 40A
Collector Current-Max (IC)	80
Continuous Collector Current	Trench Field Stop
Collector-Emitter Voltage-Max	99 nC
Gate Charge	200 A
Current - Collector Pulsed (Icm)	21ns/90ns
Td (on/off) @ 25°C	1.19mJ (on), 630μJ (off)
Gate-Emitter Thr Voltage-Max	79 ns
Reverse Recovery Time (trr)	IGBT Transistors

Transistors - IGBTs - Single