Showing 2989–3000 of 3680 results
Rectron USA RM40N600T7
In stock
| Manufacturer |
Rectron USA |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 |
| Base Product Number |
RM40N |
| Mfr |
Rectron USA |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Input Type |
Standard |
| Power - Max |
306 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
80 A |
| Test Condition |
400V, 40A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
149 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
21ns/203ns |
| Switching Energy |
1.12mJ (on), 610μJ (off) |
| Reverse Recovery Time (trr) |
151 ns |
Renesas Electronics America Inc RBN25H125S1FPQ-A0#CB0
In stock
| Manufacturer |
Renesas Electronics |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247A |
| Brand |
Renesas Electronics |
| Collector- Emitter Voltage VCEO Max |
1.25 kV |
| Continuous Collector Current Ic Max |
25 A |
| Current-Collector (Ic) (Max) |
50 A |
| Factory Pack QuantityFactory Pack Quantity |
25 |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Maximum Operating Temperature |
+ 175 C |
| Mounting Styles |
Through Hole |
| Pd - Power Dissipation |
223 W |
| Product Status |
Active |
| Test Conditions |
600V, 25A, 10Ohm, 15V |
| Operating Temperature |
175°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
223 |
| Input Type |
Standard |
| Power - Max |
223 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1250 V |
| Vce(on) (Max) @ Vge, Ic |
2.34V @ 15V, 25A |
| Continuous Collector Current |
50 |
| IGBT Type |
Trench |
| Gate Charge |
56 nC |
| Td (on/off) @ 25°C |
19ns/109ns |
| Switching Energy |
1.1mJ (on), 800μJ (off) |
| Reverse Recovery Time (trr) |
102 ns |
| Product Category |
IGBT Transistors |
Renesas Electronics America Inc RBN40H125S1FPQ-A0#CB0
In stock
| Manufacturer |
Renesas Electronics |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247A |
| Mounting Style |
Through Hole |
| Brand |
Renesas Electronics |
| Maximum Operating Temperature |
+ 175 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
319 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1250 V |
| Current - Collector (Ic) (Max) |
80 A |
| Test Condition |
600V, 40A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.34V @ 15V, 40A |
| IGBT Type |
Trench |
| Gate Charge |
85 nC |
| Td (on/off) @ 25°C |
25ns/124ns |
| Switching Energy |
2mJ (on), 1.4mJ (off) |
| Reverse Recovery Time (trr) |
156 ns |
| Product Category |
IGBT Transistors |
Renesas Electronics America Inc RBN40H65T1FPQ-A0#CB0
In stock
| Manufacturer |
Renesas Electronics |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247A |
| Mounting Style |
Through Hole |
| Brand |
Renesas Electronics |
| Maximum Operating Temperature |
+ 175 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
185 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Current - Collector (Ic) (Max) |
80 A |
| Test Condition |
400V, 40A, 16Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 40A |
| IGBT Type |
Trench |
| Gate Charge |
28 nC |
| Td (on/off) @ 25°C |
22ns/96ns |
| Switching Energy |
620μJ (on), 520μJ (off) |
| Reverse Recovery Time (trr) |
55 ns |
| Product Category |
IGBT Transistors |
Renesas Electronics America Inc RBN50H65T1FPQ-A0#CB0
In stock
| Manufacturer |
Renesas Electronics |
|---|---|
| Factory Pack QuantityFactory Pack Quantity |
25 |
| Test Conditions |
400V, 50A, 16Ohm, 15V |
| Product Status |
Active |
| Pd - Power Dissipation |
250 W |
| Package |
Tube |
| Mounting Styles |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Operating Temperature |
175°C (TJ) |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Current-Collector (Ic) (Max) |
100 A |
| Continuous Collector Current Ic Max |
50 A |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Brand |
Renesas Electronics |
| Supplier Device Package |
TO-247A |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Subcategory |
IGBTs |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| Reverse Recovery Time (trr) |
65 ns |
| Switching Energy |
830μJ (on), 670μJ (off) |
| Td (on/off) @ 25°C |
20ns/93ns |
| Gate Charge |
36 nC |
| IGBT Type |
Trench |
| Continuous Collector Current |
100 |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Packaging |
Tube |
| Product Type |
IGBT Transistors |
| Power - Max |
250 W |
| Input Type |
Standard |
| Power Dissipation |
250 |
| Configuration |
Single |
| Technology |
Si |
| Product Category |
IGBT Transistors |
Renesas Electronics America Inc RBN75H65T1FPQ-A0#CB0
In stock
| Manufacturer |
Renesas Electronics America Inc |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247A |
| Base Product Number |
Renesas Electronics |
| Brand |
Renesas Electronics |
| Minimum Operating Temperature |
Tube |
| Package Type |
Active |
| Product Status |
Details |
| Operating Temperature |
Tube |
| Series |
IGBTs |
| Configuration |
Standard |
| Input Type |
312 W |
| Power - Max |
IGBT Transistors |
| Operating Temperature Range |
650 V |
| Voltage - Collector Emitter Breakdown (Max) |
150 A |
| Current - Collector (Ic) (Max) |
400V, 75A, 16Ohm, 15V |
| Test Condition |
2V @ 15V, 75A |
| Continuous Collector Current |
Trench |
| IGBT Type |
54 nC |
| Current - Collector Pulsed (Icm) |
29ns/113ns |
| Td (on/off) @ 25°C |
1.6mJ (on), 1mJ (off) |
| Switching Energy |
72 ns |
| Reverse Recovery Time (trr) |
IGBT Transistors |
| Product Category |
mm |
| Height |
mm |
| Length |
mm |