Showing 3217–3228 of 3680 results
ROHM Semiconductor RGCL60TK60DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PFM, SC-93-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
30A |
| Number of Elements |
1 |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| JESD-30 Code |
R-PSFM-T3 |
| Turn On Time |
85 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
| Input Type |
Standard |
| Power - Max |
54W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
58ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
ISOLATED |
| Turn Off Time-Nom (toff) |
479 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
68nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
44ns/186ns |
| Switching Energy |
770μJ (on), 1.11mJ (off) |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGCL60TS60DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
48A |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Power - Max |
111W |
| Input Type |
Standard |
| Reverse Recovery Time |
58ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
68nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
44ns/186ns |
| Switching Energy |
770μJ (on), 1.11mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGCL60TS60GC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Collector Emitter Voltage |
600 V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247G |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Continuous Collector Current Ic Max |
30 A |
| Current-Collector (Ic) (Max) |
48 A |
| Pd - Power Dissipation |
111 W |
| Mounting Type |
Through Hole |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247GE |
| Factory Pack QuantityFactory Pack Quantity |
600 |
| Product Status |
Active |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Power Dissipation |
111W |
| Input Type |
Standard |
| Power - Max |
111 W |
| Test Conditions |
400V, 30A, 10Ohm, 15V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
| Continuous Collector Current |
48A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
68 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
44ns/186ns |
| Switching Energy |
770μJ (on), 1.11mJ (off) |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGCL80TK60GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PFM, SC-93-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
35A |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
57W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Turn On Time |
114 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
565 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
98nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
53ns/227ns |
| Switching Energy |
1.11mJ (on), 1.68mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGCL80TS60DGC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Supplier Device Package |
TO-247G |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
600 V |
| Continuous Collector Current Ic Max |
40 A |
| Current-Collector (Ic) (Max) |
65 A |
| Factory Pack QuantityFactory Pack Quantity |
600 |
| Product Status |
Active |
| Maximum Collector Emitter Voltage |
600 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247GE |
| Pd - Power Dissipation |
148 W |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Subcategory |
IGBTs |
| Technology |
Si |
| Power Dissipation |
148W |
| Input Type |
Standard |
| Power - Max |
148 W |
| Product Type |
IGBT Transistors |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 40A |
| Continuous Collector Current |
65A |
| Test Conditions |
400V, 40A, 10Ohm, 15V |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
98 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
53ns/227ns |
| Switching Energy |
1.11mJ (on), 1.68mJ (off) |
| Reverse Recovery Time (trr) |
58 ns |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGPR10BM40FHTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
20A |
| Test Conditions |
300V, 8A, 100 Ω, 5V |
| Operating Temperature |
-40°C~75°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
Automotive, AEC-Q101 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
107W |
| Voltage - Collector Emitter Breakdown (Max) |
460V |
| Vce(on) (Max) @ Vge, Ic |
2.0V @ 5V, 10A |
| Gate Charge |
14nC |
| Td (on/off) @ 25°C |
500ns/4μs |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGPR30BM40HRTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
30A |
| Test Conditions |
300V, 8A, 100 Ω, 5V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
Automotive, AEC-Q101 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
125W |
| Voltage - Collector Emitter Breakdown (Max) |
430V |
| Vce(on) (Max) @ Vge, Ic |
2.0V @ 5V, 10A |
| Gate Charge |
22nC |
| Td (on/off) @ 25°C |
500ns/4μs |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGPR30NS40HRTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
30A |
| Test Conditions |
300V, 8A, 100 Ω, 5V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2017 |
| Series |
Automotive, AEC-Q101 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
125W |
| Voltage - Collector Emitter Breakdown (Max) |
430V |
| Vce(on) (Max) @ Vge, Ic |
2.0V @ 5V, 10A |
| Gate Charge |
22nC |
| Td (on/off) @ 25°C |
500ns/4μs |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGPZ10BM40FHTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
20A |
| Test Conditions |
300V, 8A, 100 Ω, 5V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2015 |
| Series |
Automotive, AEC-Q101 |
| Part Status |
Active |
| Factory Lead Time |
17 Weeks |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| ECCN Code |
EAR99 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
107W |
| Voltage - Collector Emitter Breakdown (Max) |
460V |
| Vce(on) (Max) @ Vge, Ic |
2.0V @ 5V, 10A |
| Gate Charge |
14nC |
| Td (on/off) @ 25°C |
500ns/4μs |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGS00TS65DHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
88A |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2016 |
| Series |
Automotive, AEC-Q101 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Factory Lead Time |
17 Weeks |
| Input Type |
Standard |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Power - Max |
326W |
| Reverse Recovery Time |
103ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
58nC |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
36ns/115ns |
| Switching Energy |
1.46mJ (on), 1.29mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGS00TS65EHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
88 A |
| Factory Pack QuantityFactory Pack Quantity |
450 |
| Qualification |
AEC-Q101 |
| Mounting Type |
Through Hole |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Pd - Power Dissipation |
326 W |
| Product Status |
Active |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Test Conditions |
400V, 50A, 10Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
326W |
| Input Type |
Standard |
| Power - Max |
326 W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Continuous Collector Current |
88 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
58 nC |
| Current - Collector Pulsed (Icm) |
150 A |
| Td (on/off) @ 25°C |
36ns/115ns |
| Reverse Recovery Time (trr) |
113 ns |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGS30TSX2DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
600V, 15A, 10Ohm, 15V |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
30 A |
| Current-Collector (Ic) (Max) |
30 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Maximum Collector Emitter Voltage |
1200 V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
267 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
267W |
| Input Type |
Standard |
| Power - Max |
267 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Continuous Collector Current |
30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
41 nC |
| Current - Collector Pulsed (Icm) |
45 A |
| Td (on/off) @ 25°C |
30ns/70ns |
| Switching Energy |
740μJ (on), 600μJ (off) |
| Reverse Recovery Time (trr) |
157 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |