Showing 3229–3240 of 3680 results
Rohm Semiconductor RGS30TSX2GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
15 A |
| Current-Collector (Ic) (Max) |
30 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
267 W |
| Maximum Collector Emitter Voltage |
1200 V |
| Test Conditions |
600V, 15A, 10Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
267W |
| Input Type |
Standard |
| Power - Max |
267 W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
| Continuous Collector Current |
30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
41 nC |
| Current - Collector Pulsed (Icm) |
45 A |
| Td (on/off) @ 25°C |
30ns/70ns |
| Switching Energy |
740μJ (on), 600μJ (off) |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGS30TSX2HRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
30 A |
| Current-Collector (Ic) (Max) |
30 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
267 W |
| Maximum Collector Emitter Voltage |
1200 V |
| Test Conditions |
600V, 15A, 10Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
267W |
| Input Type |
Standard |
| Power - Max |
267 W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
| Continuous Collector Current |
30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
41 nC |
| Current - Collector Pulsed (Icm) |
45 A |
| Td (on/off) @ 25°C |
30ns/70ns |
| Switching Energy |
740µJ (on), 600µJ (off) |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGS50TSX2GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Package / Case |
TO-247N-3 |
| Supplier Device Package |
TO-247N |
| Mounting Style |
Through Hole |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
50 A |
| Factory Pack Quantity:Factory Pack Quantity |
30 |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Vishay Vitramon |
| Minimum Operating Temperature |
– 40 C |
| Package |
Bulk |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
395 W |
| Product Status |
Obsolete |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Maximum Collector Emitter Voltage |
1200 V |
| Series |
* |
| Current - Collector (Ic) (Max) |
50 A |
| Collector Emitter Saturation Voltage |
1.7V |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
395W |
| Input Type |
Standard |
| Power - Max |
395 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Test Condition |
600V, 25A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 25A |
| Continuous Collector Current |
50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
67 nC |
| Current - Collector Pulsed (Icm) |
75 A |
| Td (on/off) @ 25°C |
37ns/140ns |
| Switching Energy |
1.4mJ (on), 1.65mJ (off) |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGS60TS65DHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
56A |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
8 Weeks |
| Power - Max |
223W |
| Input Type |
Standard |
| Reverse Recovery Time |
103ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
36nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
28ns/104ns |
| Switching Energy |
660μJ (on), 810μJ (off) |
| RoHS Status |
RoHS Compliant |
Rohm Semiconductor RGS80TS65DHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Mfr |
Rohm Semiconductor |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
73 A |
| Factory Pack QuantityFactory Pack Quantity |
450 |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Qualification |
AEC-Q101 |
| Mounting Type |
Through Hole |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Part # Aliases |
RGS80TS65DHR |
| Pd - Power Dissipation |
272 W |
| Product Status |
Active |
| Maximum Operating Temperature |
+ 175 C |
| Test Conditions |
400V, 40A, 10Ohm, 15V |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
272 |
| Input Type |
Standard |
| Power - Max |
272 W |
| Product Type |
IGBT Transistors |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Continuous Collector Current |
73 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
48 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
37ns/112ns |
| Switching Energy |
1.05mJ (on), 1.03mJ (off) |
| Reverse Recovery Time (trr) |
103 ns |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGS80TS65HRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
73A |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Factory Lead Time |
8 Weeks |
| Power - Max |
272W |
| Input Type |
Standard |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
48nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
37ns/112ns |
| Switching Energy |
1.05mJ (on), 1.03mJ (off) |
ROHM Semiconductor RGS80TSX2DGC11
In stock
| Manufacturer |
BARKER MICROFARADS INC |
|---|---|
| Mfr |
Rohm Semiconductor |
| Supplier Device Package |
TO-247N |
| Mounting Style |
Through Hole |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
80 A |
| Factory Pack Quantity:Factory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
1200 V |
| Maximum Gate Emitter Voltage |
±30V |
| Capacitance |
405uF |
| Package / Case |
TO-247N-3 |
| Minimum Operating Temperature |
– 40 C |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
555 W |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
2.156in x 1.312in Oval Case |
| Tolerance |
±3% |
| Maximum Operating Temperature |
+ 175 C |
| Subcategory |
IGBTs |
| Collector Emitter Saturation Voltage |
1.7V |
| Test Condition |
600V, 40A, 10Ohm, 15V |
| Configuration |
Single |
| Voltage |
370VAC |
| Power Dissipation |
555W |
| Input Type |
Standard |
| Power - Max |
555 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Current - Collector (Ic) (Max) |
80 A |
| Technology |
Si |
| Pin Count |
3 |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| Continuous Collector Current |
80A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
104 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
49ns/199ns |
| Switching Energy |
3mJ (on), 3.1mJ (off) |
| Reverse Recovery Time (trr) |
198 ns |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGS80TSX2DHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
8 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
600V, 40A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
555W |
| Reverse Recovery Time |
198ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
104nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
49ns/199ns |
| Switching Energy |
3mJ (on), 3.1mJ (off) |
Rohm Semiconductor RGS80TSX2GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
80 A |
| Current-Collector (Ic) (Max) |
80 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
555 W |
| Maximum Collector Emitter Voltage |
1200 V |
| Test Conditions |
600V, 40A, 10Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
555W |
| Input Type |
Standard |
| Power - Max |
555 W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| Continuous Collector Current |
80A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
104 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
49ns/199ns |
| Switching Energy |
3mJ (on), 3.1mJ (off) |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGSX5TS65DHRC11
In stock
| Manufacturer |
Rohm Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Product Status |
Active |
| Pd - Power Dissipation |
404 W |
| Package Type |
TO-247N |
| Package |
Tube |
| Mounting Styles |
Through Hole |
| Minimum Operating Temperature |
– 40 C |
| Test Conditions |
400V, 75A, 10Ohm, 15V |
| Mfr |
Rohm Semiconductor |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Collector Emitter Voltage |
650 V |
| Current-Collector (Ic) (Max) |
114 A |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Supplier Device Package |
TO-247N |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Technology |
Si |
| Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 75A |
| Switching Energy |
3.32mJ (on), 1.9mJ (off) |
| Td (on/off) @ 25°C |
43ns/113ns |
| Current - Collector Pulsed (Icm) |
225 A |
| Gate Charge |
79 nC |
| IGBT Type |
Trench Field Stop |
| Continuous Collector Current |
114A |
| Channel Type |
N |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Power - Max |
404 W |
| Input Type |
Standard |
| Power Dissipation |
404W |
| Configuration |
Single |
| Pin Count |
3 |
| Reverse Recovery Time (trr) |
114 ns |
Rohm Semiconductor RGSX5TS65EGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
114 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Maximum Gate Emitter Voltage |
±30V |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
404 W |
| Product Status |
Active |
| Test Conditions |
400V, 75A, 10Ohm, 15V |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 75A |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
404W |
| Input Type |
Standard |
| Power - Max |
404 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Packaging |
Tube |
| Continuous Collector Current |
114A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
79 nC |
| Current - Collector Pulsed (Icm) |
225 A |
| Td (on/off) @ 25°C |
43ns/113ns |
| Switching Energy |
3.44mJ (on), 1.9mJ (off) |
| Reverse Recovery Time (trr) |
116 ns |
| Technology |
Si |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGSX5TS65EHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
114 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Maximum Gate Emitter Voltage |
±30V |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
404 W |
| Product Status |
Active |
| Test Conditions |
400V, 75A, 10Ohm, 15V |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 75A |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
404W |
| Input Type |
Standard |
| Power - Max |
404 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Packaging |
Tube |
| Continuous Collector Current |
114A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
79 nC |
| Current - Collector Pulsed (Icm) |
225 A |
| Td (on/off) @ 25°C |
43ns/113ns |
| Switching Energy |
3.44mJ (on), 1.9mJ (off) |
| Reverse Recovery Time (trr) |
116 ns |
| Technology |
Si |
| Product Category |
IGBT Transistors |