Showing 3241–3252 of 3680 results
Rohm Semiconductor RGSX5TS65HRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
114 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 75A, 10Ohm, 15V |
| Mounting Type |
Through Hole |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
404 W |
| Product Status |
Active |
| Maximum Gate Emitter Voltage |
±30V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
404W |
| Input Type |
Standard |
| Power - Max |
404 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 75A |
| Continuous Collector Current |
114A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
79 nC |
| Current - Collector Pulsed (Icm) |
225 A |
| Td (on/off) @ 25°C |
43ns/113ns |
| Switching Energy |
3.32mJ (on), 1.9mJ (off) |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGT00TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Terminal Position |
SINGLE |
| ECCN Code |
EAR99 |
| Number of Terminations |
3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Published |
2016 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-40°C~175°C TJ |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
85A |
| Transistor Element Material |
SILICON |
| Surface Mount |
NO |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
17 Weeks |
| JESD-30 Code |
R-PSFM-T3 |
| Turn On Time |
110 ns |
| Td (on/off) @ 25°C |
42ns/137ns |
| Current - Collector Pulsed (Icm) |
150A |
| Gate Charge |
94nC |
| IGBT Type |
Trench Field Stop |
| Turn Off Time-Nom (toff) |
225 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reverse Recovery Time |
54ns |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Power - Max |
277W |
| Input Type |
Standard |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT16NL65DGTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| Number of Terminations |
2 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Test Conditions |
400V, 8A, 10 Ω, 15V |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
16A |
| Transistor Element Material |
SILICON |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Turn On Time |
27 ns |
| Td (on/off) @ 25°C |
13ns/33ns |
| Current - Collector Pulsed (Icm) |
24A |
| Gate Charge |
21nC |
| IGBT Type |
Trench Field Stop |
| Turn Off Time-Nom (toff) |
170 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 8A |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| JESD-30 Code |
R-PSSO-G2 |
| Reverse Recovery Time |
42ns |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Power - Max |
94W |
| Input Type |
Standard |
| Case Connection |
COLLECTOR |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT16NS65DGC9
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
16A |
| Number of Elements |
1 |
| Test Conditions |
400V, 8A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSIP-T3 |
| Input Type |
Standard |
| Power - Max |
94W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
42ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
27 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 8A |
| Turn Off Time-Nom (toff) |
170 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
21nC |
| Current - Collector Pulsed (Icm) |
24A |
| Td (on/off) @ 25°C |
13ns/33ns |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT16TM65DGC9
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
400V, 8A, 10 Ω, 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Number of Terminations |
3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| JESD-30 Code |
R-PSFM-T3 |
| Operating Temperature |
-40°C~175°C TJ |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
9A |
| Transistor Element Material |
SILICON |
| Surface Mount |
NO |
| Package / Case |
TO-220-3 Full Pack |
| Mounting Type |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Case Connection |
ISOLATED |
| Turn On Time |
27 ns |
| Td (on/off) @ 25°C |
13ns/33ns |
| Current - Collector Pulsed (Icm) |
24A |
| Gate Charge |
21nC |
| IGBT Type |
Trench Field Stop |
| Turn Off Time-Nom (toff) |
170 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 8A |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code |
TO-220AB |
| Reverse Recovery Time |
42ns |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Power - Max |
22W |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGT20NL65GTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Brand |
ROHM Semiconductor |
| Collector Current (DC) |
20(A) |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
10 A |
| Current-Collector (Ic) (Max) |
20 A |
| Factory Pack QuantityFactory Pack Quantity |
1000 |
| Gate to Emitter Voltage (Max) |
±30(V) |
| Maximum Collector Emitter Voltage |
650 V |
| Package Type |
TO-263L |
| Maximum Gate Emitter Voltage |
±30V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting |
Surface Mount |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Operating Temperature (Max.) |
175C |
| Operating Temperature (Min.) |
-40C |
| Operating Temperature Classification |
AUTOMOTIVEC |
| Package |
Digi-Reel? |
| Supplier Device Package |
TO-263AB |
| Mounting Type |
Surface Mount |
| Input Type |
Standard |
| Product Status |
Active |
| Test Conditions |
400V, 10A, 10Ohm, 15V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tape and Reel |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
2 +Tab |
| Configuration |
Single |
| Power Dissipation |
106W |
| Power - Max |
106 W |
| Product Type |
IGBT Transistors |
| Pd - Power Dissipation |
53 W |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 10A |
| Continuous Collector Current |
20A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
22 nC |
| Current - Collector Pulsed (Icm) |
30 A |
| Td (on/off) @ 25°C |
12ns/32ns |
| Rad Hardened |
No |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGT20TM65DGC9
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
400V, 10A, 10 Ω, 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Number of Terminations |
3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| JESD-30 Code |
R-PSFM-T3 |
| Operating Temperature |
-40°C~175°C TJ |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
10A |
| Transistor Element Material |
SILICON |
| Surface Mount |
NO |
| Package / Case |
TO-220-3 Full Pack |
| Mounting Type |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Case Connection |
ISOLATED |
| Turn On Time |
31 ns |
| Td (on/off) @ 25°C |
12ns/32ns |
| Current - Collector Pulsed (Icm) |
30A |
| Gate Charge |
22nC |
| IGBT Type |
Trench Field Stop |
| Turn Off Time-Nom (toff) |
174 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 10A |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JEDEC-95 Code |
TO-220AB |
| Reverse Recovery Time |
42ns |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Power - Max |
25W |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT30NS65DGC9
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
30A |
| Number of Elements |
1 |
| Test Conditions |
400V, 15A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSIP-T3 |
| Input Type |
Standard |
| Power - Max |
133W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
55ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
40 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
| Turn Off Time-Nom (toff) |
204 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
32nC |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
18ns/64ns |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT30NS65DGTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 15A, 10 Ω, 15V |
| Turn Off Delay Time |
64 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
133W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-40°C~175°C TJ |
| JESD-30 Code |
R-PSSO-G2 |
| Turn On Time |
40 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 15A |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Turn On Delay Time |
18 ns |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
30A |
| Reverse Recovery Time |
55 ns |
| Max Breakdown Voltage |
650V |
| Element Configuration |
Single |
| Power Dissipation |
133W |
| Max Junction Temperature (Tj) |
175°C |
| Continuous Collector Current |
30A |
| Turn Off Time-Nom (toff) |
204 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
32nC |
| Current - Collector Pulsed (Icm) |
45A |
| Td (on/off) @ 25°C |
18ns/64ns |
| Height |
5mm |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT40NL65DGTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| Number of Terminations |
2 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
40A |
| Transistor Element Material |
SILICON |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Turn On Time |
51 ns |
| Td (on/off) @ 25°C |
22ns/75ns |
| Current - Collector Pulsed (Icm) |
60A |
| Gate Charge |
40nC |
| IGBT Type |
Trench Field Stop |
| Turn Off Time-Nom (toff) |
204 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| JESD-30 Code |
R-PSSO-G2 |
| Reverse Recovery Time |
58ns |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Power - Max |
161W |
| Input Type |
Standard |
| Case Connection |
COLLECTOR |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT40NS65DGC9
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
40A |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSIP-T3 |
| Input Type |
Standard |
| Power - Max |
161W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
58ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
51 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
| Turn Off Time-Nom (toff) |
204 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
40nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
22ns/75ns |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT40NS65DGTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
1.946308g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 20A, 10 Ω, 15V |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
17 Weeks |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
161W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-40°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Max Breakdown Voltage |
650V |
| Turn On Time |
51 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
161W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
58 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
| Continuous Collector Current |
20A |
| Turn Off Time-Nom (toff) |
204 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
40nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
22ns/75ns |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |