Showing 3253–3264 of 3680 results
Rohm Semiconductor RGT40TS65DGC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Supplier Device Package |
TO-247G |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
40 A |
| Current-Collector (Ic) (Max) |
40 A |
| Factory Pack QuantityFactory Pack Quantity |
600 |
| Product Status |
Active |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247GE |
| Pd - Power Dissipation |
144 W |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Product Type |
IGBT Transistors |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
144W |
| Input Type |
Standard |
| Power - Max |
144 W |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 20A |
| Test Conditions |
400V, 20A, 10Ohm, 15V |
| Continuous Collector Current |
40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
40 nC |
| Current - Collector Pulsed (Icm) |
60 A |
| Td (on/off) @ 25°C |
22ns/75ns |
| Reverse Recovery Time (trr) |
58 ns |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGT50NS65DGTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Surface Mount |
YES |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
48A |
| Number of Elements |
1 |
| Test Conditions |
400V, 25A, 10 Ω, 15V |
| Reach Compliance Code |
not_compliant |
| Factory Lead Time |
17 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-40°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
65 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
194W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
58ns |
| JESD-30 Code |
R-PSSO-G2 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 25A |
| Turn Off Time-Nom (toff) |
210 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
49nC |
| Current - Collector Pulsed (Icm) |
75A |
| Td (on/off) @ 25°C |
27ns/88ns |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGT50TS65DGC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Supplier Device Package |
TO-247G |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
48 A |
| Current-Collector (Ic) (Max) |
48 A |
| Factory Pack QuantityFactory Pack Quantity |
600 |
| Product Status |
Active |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247GE |
| Pd - Power Dissipation |
174 W |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Product Type |
IGBT Transistors |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
174W |
| Input Type |
Standard |
| Power - Max |
174 W |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 25A |
| Test Conditions |
400V, 25A, 10Ohm, 15V |
| Continuous Collector Current |
48A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
49 nC |
| Current - Collector Pulsed (Icm) |
75 A |
| Td (on/off) @ 25°C |
27ns/88ns |
| Reverse Recovery Time (trr) |
58 ns |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGT60TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Max Power Dissipation |
194W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Number of Elements |
1 |
| Packaging |
Tube |
| Published |
2014 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
15 Weeks |
| Turn On Time |
70 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
| Input Type |
Standard |
| Power - Max |
194W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
55A |
| Reverse Recovery Time |
58 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Continuous Collector Current |
30A |
| Turn Off Time-Nom (toff) |
218 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
58nC |
| Current - Collector Pulsed (Icm) |
90A |
| Td (on/off) @ 25°C |
29ns/100ns |
| REACH SVHC |
Unknown |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGT60TS65DGC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Supplier Device Package |
TO-247G |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
55 A |
| Current-Collector (Ic) (Max) |
55 A |
| Factory Pack QuantityFactory Pack Quantity |
600 |
| Product Status |
Active |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247GE |
| Pd - Power Dissipation |
194 W |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Product Type |
IGBT Transistors |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
194W |
| Input Type |
Standard |
| Power - Max |
194 W |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
| Test Conditions |
400V, 30A, 10Ohm, 15V |
| Continuous Collector Current |
55A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
58 nC |
| Current - Collector Pulsed (Icm) |
90 A |
| Td (on/off) @ 25°C |
29ns/100ns |
| Reverse Recovery Time (trr) |
58 ns |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGT80TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Max Power Dissipation |
234W |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Weight |
38.000013g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Number of Elements |
1 |
| Packaging |
Tube |
| Published |
2014 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Turn On Time |
90 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| Input Type |
Standard |
| Power - Max |
234W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
70A |
| Reverse Recovery Time |
58 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Continuous Collector Current |
40A |
| Turn Off Time-Nom (toff) |
206 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
79nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
34ns/119ns |
| REACH SVHC |
Unknown |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT8BM65DTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
3.949996g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 4A, 50 Ω, 15V |
| Reach Compliance Code |
not_compliant |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
62W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Reverse Recovery Time |
40 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
62W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
8A |
| Max Breakdown Voltage |
650V |
| Turn On Time |
54 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 4A |
| Continuous Collector Current |
4A |
| Turn Off Time-Nom (toff) |
158 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
13.5nC |
| Current - Collector Pulsed (Icm) |
12A |
| Td (on/off) @ 25°C |
17ns/69ns |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT8NL65DGTL
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Form |
GULL WING |
| Terminal Position |
SINGLE |
| Number of Terminations |
2 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Packaging |
Tape & Reel (TR) |
| Test Conditions |
400V, 4A, 50 Ω, 15V |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
8A |
| Transistor Element Material |
SILICON |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Turn On Time |
54 ns |
| Td (on/off) @ 25°C |
17ns/69ns |
| Current - Collector Pulsed (Icm) |
12A |
| Gate Charge |
13.5nC |
| IGBT Type |
Trench Field Stop |
| Turn Off Time-Nom (toff) |
158 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 4A |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| JESD-30 Code |
R-PSSO-G2 |
| Reverse Recovery Time |
40ns |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Power - Max |
65W |
| Input Type |
Standard |
| Case Connection |
COLLECTOR |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGT8NS65DGC9
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
8A |
| Number of Elements |
1 |
| Test Conditions |
400V, 4A, 50 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| JESD-30 Code |
R-PSIP-T3 |
| Input Type |
Standard |
| Power - Max |
65W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
40ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
54 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 4A |
| Turn Off Time-Nom (toff) |
158 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
13.5nC |
| Current - Collector Pulsed (Icm) |
12A |
| Td (on/off) @ 25°C |
17ns/69ns |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGTH00TK65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PFM, SC-93-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
35A |
| Number of Elements |
1 |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
72W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
225ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
102 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
221 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
94nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
39ns/143ns |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGTH00TK65GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PFM, SC-93-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
35A |
| Number of Elements |
1 |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2016 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
72W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
102 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
221 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
94nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
39ns/143ns |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGTH00TS65DGC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Collector Emitter Voltage |
650 V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247G |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
200 A |
| Current-Collector (Ic) (Max) |
85 A |
| Pd - Power Dissipation |
277 W |
| Mounting Type |
Through Hole |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247GE |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Power Dissipation |
277W |
| Input Type |
Standard |
| Power - Max |
277 W |
| Test Conditions |
400V, 50A, 10Ohm, 15V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
| Continuous Collector Current |
85A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
94 nC |
| Current - Collector Pulsed (Icm) |
200 A |
| Td (on/off) @ 25°C |
39ns/143ns |
| Reverse Recovery Time (trr) |
54 ns |
| Product Category |
IGBT Transistors |