Showing 3277–3288 of 3680 results
ROHM Semiconductor RGTH60TS65GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Max Power Dissipation |
194W |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Packaging |
Tube |
| Published |
2014 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Mount |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Turn On Time |
67 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Input Type |
Standard |
| Power - Max |
197W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Max Collector Current |
58A |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
| Continuous Collector Current |
30A |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Turn Off Time-Nom (toff) |
179 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
58nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
27ns/105ns |
| REACH SVHC |
Unknown |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGTH60TS65GC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Subcategory |
IGBTs |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 |
| Mounting Style |
Through Hole |
| Brand |
ROHM Semiconductor |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Configuration |
Single |
| Technology |
Si |
| Input Type |
Standard |
| Power - Max |
194 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Current - Collector (Ic) (Max) |
58 A |
| Test Condition |
400V, 30A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
58 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
27ns/105ns |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGTH80TS65DGC13
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Collector Emitter Voltage |
650 V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247G |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
160 A |
| Current-Collector (Ic) (Max) |
70 A |
| Pd - Power Dissipation |
234 W |
| Mounting Type |
Through Hole |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247GE |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Power Dissipation |
234W |
| Input Type |
Standard |
| Power - Max |
234 W |
| Test Conditions |
400V, 40A, 10Ohm, 15V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| Continuous Collector Current |
70A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
79 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
34ns/120ns |
| Reverse Recovery Time (trr) |
236 ns |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGTH80TS65GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Number of Elements |
1 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| ECCN Code |
EAR99 |
| Factory Lead Time |
17 Weeks |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Current-Collector (Ic) (Max) |
70A |
| Max Power Dissipation |
234W |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
194 ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Configuration |
SINGLE |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Turn On Time |
84 ns |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
79nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
34ns/120ns |
| REACH SVHC |
Unknown |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
ROHM Semiconductor RGTV00TK65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Terminal Position |
SINGLE |
| Number of Terminations |
3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| JESD-30 Code |
R-PSFM-T3 |
| Operating Temperature |
-40°C~175°C TJ |
| Number of Elements |
1 |
| Current-Collector (Ic) (Max) |
45A |
| Transistor Element Material |
SILICON |
| Surface Mount |
NO |
| Package / Case |
TO-3PFM, SC-93-3 |
| Mounting Type |
Through Hole |
| Factory Lead Time |
17 Weeks |
| Case Connection |
ISOLATED |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
| Switching Energy |
1.17mJ (on), 940μJ (off) |
| Td (on/off) @ 25°C |
41ns/142ns |
| Current - Collector Pulsed (Icm) |
200A |
| Gate Charge |
104nC |
| IGBT Type |
Trench Field Stop |
| Turn Off Time-Nom (toff) |
247 ns |
| Turn On Time |
62 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Reverse Recovery Time |
102ns |
| Polarity/Channel Type |
N-CHANNEL |
| Transistor Application |
POWER CONTROL |
| Power - Max |
94W |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGTV00TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
95A |
| Number of Elements |
1 |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
276W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
102ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
247 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
104nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
41ns/142ns |
| Switching Energy |
1.17mJ (on), 940μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGTV00TS65GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
95A |
| Number of Elements |
1 |
| Test Conditions |
400V, 50A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
17 Weeks |
| Configuration |
SINGLE |
| JESD-30 Code |
R-PSFM-T3 |
| Input Type |
Standard |
| Power - Max |
276W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
247 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
104nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
41ns/142ns |
| Switching Energy |
1.17mJ (on), 940μJ (off) |
| RoHS Status |
ROHS3 Compliant |
ROHM Semiconductor RGTV60TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
60A |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
194W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
95ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
45 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
201 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
64nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
33ns/105ns |
| Switching Energy |
570μJ (on), 500μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGTV80TK65DGVC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Supplier Device Package |
TO-3PFM |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
39 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Maximum Gate Emitter Voltage |
±30V |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-3PFM |
| Pd - Power Dissipation |
85 W |
| Product Status |
Active |
| Test Conditions |
400V, 40A, 10Ohm, 15V |
| Package / Case |
TO-3PFM, SC-93-3 |
| Mounting Type |
Through Hole |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
85W |
| Input Type |
Standard |
| Power - Max |
85 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Packaging |
Tube |
| Continuous Collector Current |
39A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
81 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
39ns/113ns |
| Switching Energy |
1.02mJ (on), 710μJ (off) |
| Reverse Recovery Time (trr) |
101 ns |
| Technology |
Si |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGTV80TK65GVC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
±30V |
| Package / Case |
TO-3PFM, SC-93-3 |
| Supplier Device Package |
TO-3PFM |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
23 A |
| Current-Collector (Ic) (Max) |
39 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Package Type |
TO-3PFM |
| Pd - Power Dissipation |
85 W |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 40A, 10Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
85W |
| Input Type |
Standard |
| Power - Max |
85 W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Continuous Collector Current |
39A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
81 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
39ns/113ns |
| Switching Energy |
1.02mJ (on), 710μJ (off) |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGTV80TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
40 A |
| Current-Collector (Ic) (Max) |
78 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Test Conditions |
400V, 40A, 10Ohm, 15V |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Pd - Power Dissipation |
234 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Packaging |
Tube |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
234W |
| Input Type |
Standard |
| Power - Max |
234 W |
| Product Type |
IGBT Transistors |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Continuous Collector Current |
78A |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
81 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
39ns/113ns |
| Switching Energy |
1.02mJ (on), 710μJ (off) |
| Reverse Recovery Time (trr) |
101 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGTV80TS65GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
40 A |
| Current-Collector (Ic) (Max) |
78 A |
| Product Status |
Active |
| Mounting Type |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Pd - Power Dissipation |
234 W |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Test Conditions |
400V, 40A, 10Ohm, 15V |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
234W |
| Input Type |
Standard |
| Power - Max |
234 W |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Packaging |
Tube |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Continuous Collector Current |
78A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
81 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
39ns/113ns |
| Switching Energy |
1.02mJ (on), 710μJ (off) |
| Product Category |
IGBT Transistors |