Showing 3301–3312 of 3680 results
Rohm Semiconductor RGW50TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector Current (DC) |
25(A) |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
25 A |
| Current-Collector (Ic) (Max) |
50 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting |
Through Hole |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
156 W |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Power - Max |
156 W |
| Test Conditions |
400V, 25A, 10Ohm, 15V |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 +Tab |
| Configuration |
Single |
| Power Dissipation |
156W |
| Input Type |
Standard |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Rad Hardened |
No |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 25A |
| Continuous Collector Current |
50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
73 nC |
| Current - Collector Pulsed (Icm) |
100 A |
| Td (on/off) @ 25°C |
35ns/102ns |
| Switching Energy |
390μJ (on), 430μJ (off) |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGW50TS65GC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector Current (DC) |
25(A) |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
25 A |
| Current-Collector (Ic) (Max) |
50 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Product Status |
Active |
| Maximum Gate Emitter Voltage |
– 30 V, + 30 V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting |
Through Hole |
| Mounting Styles |
Through Hole |
| MSL |
MSL 1 – Unlimited |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
156 W |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Power - Max |
156 W |
| Test Conditions |
400V, 25A, 10Ohm, 15V |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 +Tab |
| Configuration |
Single |
| Power Dissipation |
156W |
| Input Type |
Standard |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Rad Hardened |
No |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 25A |
| Continuous Collector Current |
50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
73 nC |
| Current - Collector Pulsed (Icm) |
100 A |
| Td (on/off) @ 25°C |
35ns/102ns |
| Switching Energy |
390μJ (on), 430μJ (off) |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGW60TK65GVC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PFM, SC-93-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
33A |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE |
| Case Connection |
ISOLATED |
| Input Type |
Standard |
| Power - Max |
72W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
50 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
209 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
84nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
37ns/114ns |
| Switching Energy |
480μJ (on), 490μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGW60TS65CHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
64 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 15A, 10Ohm, 15V |
| Mounting Type |
Through Hole |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
178 W |
| Product Status |
Active |
| Maximum Gate Emitter Voltage |
±30V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Technology |
SiC |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
178W |
| Input Type |
Standard |
| Power - Max |
178 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Continuous Collector Current |
64A |
| Gate Charge |
84 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
37ns/91ns |
| Switching Energy |
70μJ (on), 220μJ (off) |
| Reverse Recovery Time (trr) |
34 ns |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGW60TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
60A |
| Number of Elements |
1 |
| Test Conditions |
400V, 30A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
178W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
92ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
50 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Turn Off Time-Nom (toff) |
209 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
84nC |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
37ns/114ns |
| Switching Energy |
480μJ (on), 490μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGW60TS65DHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
400V, 15A, 10Ohm, 15V |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
120 A |
| Current-Collector (Ic) (Max) |
64 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Maximum Collector Emitter Voltage |
650 V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
178 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
178W |
| Input Type |
Standard |
| Power - Max |
178 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Continuous Collector Current |
64A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
84 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
36ns/107ns |
| Reverse Recovery Time (trr) |
87 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGW60TS65HRC11
In stock
| Manufacturer |
Rohm Semiconductor |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
64 A |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
178 W |
| Product Status |
Active |
| Test Conditions |
400V, 15A, 10Ohm, 15V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
178W |
| Input Type |
Standard |
| Power - Max |
178 W |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 30A |
| Continuous Collector Current |
64A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
84 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
36ns/107ns |
Rohm Semiconductor RGW80TK65EGVC11
In stock
| Manufacturer |
+ 175 C |
|---|---|
| Subcategory |
Si |
| Package / Case |
TO-3PFM, SC-93-3 |
| Surface Mount |
TO-3PFM |
| Transistor Element Material |
Through Hole |
| Base Product Number |
ROHM Semiconductor |
| Brand |
ROHM Semiconductor |
| Maximum Operating Temperature |
Rohm Semiconductor |
| Mfr |
– 40 C |
| Minimum Operating Temperature |
Tube |
| Package Type |
Active |
| Qualification |
Details |
| Operating Temperature |
Tube |
| Additional Feature |
IGBTs |
| Mounting Type |
Through Hole |
| Power Dissipation |
Standard |
| Number of Elements |
Single |
| Input Type |
81 W |
| Polarity/Channel Type |
IGBT Transistors |
| JEDEC-95 Code |
650 V |
| Voltage - Collector Emitter Breakdown (Max) |
39 A |
| Power Dissipation-Max (Abs) |
400V, 40A, 10Ohm, 15V |
| Test Condition |
1.9V @ 15V, 40A |
| Continuous Collector Current |
Trench Field Stop |
| Collector-Emitter Voltage-Max |
110 nC |
| Gate Charge |
160 A |
| Current - Collector Pulsed (Icm) |
44ns/143ns |
| Td (on/off) @ 25°C |
760μJ (on), 720μJ (off) |
| Gate-Emitter Thr Voltage-Max |
102 ns |
| Reverse Recovery Time (trr) |
IGBT Transistors |
Rohm Semiconductor RGW80TS65CHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Maximum Operating Temperature |
+ 175 C |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
81 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Collector Emitter Voltage |
650 V |
| Test Conditions |
400V, 20A, 10Ohm, 15V |
| Mounting Type |
Through Hole |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
214 W |
| Product Status |
Active |
| Maximum Gate Emitter Voltage |
±30V |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Technology |
SiC |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
214W |
| Input Type |
Standard |
| Power - Max |
214 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Continuous Collector Current |
81A |
| Gate Charge |
110 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
43ns/145ns |
| Switching Energy |
120μJ (on), 340μJ (off) |
| Reverse Recovery Time (trr) |
33 ns |
| Product Category |
IGBT Transistors |
ROHM Semiconductor RGW80TS65DGC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Factory Lead Time |
17 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
78A |
| Number of Elements |
1 |
| Test Conditions |
400V, 40A, 10 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T3 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
214W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
92ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
59 ns |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
228 ns |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
110nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
44ns/143ns |
| Switching Energy |
760μJ (on), 720μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Rohm Semiconductor RGW80TS65DHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
400V, 20A, 10Ohm, 15V |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
160 A |
| Current-Collector (Ic) (Max) |
80 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Maximum Collector Emitter Voltage |
650 V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
214 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
214W |
| Input Type |
Standard |
| Power - Max |
214 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Continuous Collector Current |
80A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
110 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
42ns/148ns |
| Reverse Recovery Time (trr) |
92 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |
Rohm Semiconductor RGW80TS65EHRC11
In stock
| Manufacturer |
ROHM Semiconductor |
|---|---|
| Test Conditions |
400V, 20A, 10Ohm, 15V |
| Supplier Device Package |
TO-247N |
| Brand |
ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
160 A |
| Current-Collector (Ic) (Max) |
80 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Maximum Gate Emitter Voltage |
±30V |
| Maximum Operating Temperature |
+ 175 C |
| Maximum Collector Emitter Voltage |
650 V |
| Mfr |
Rohm Semiconductor |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247N |
| Pd - Power Dissipation |
214 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
214W |
| Input Type |
Standard |
| Power - Max |
214 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic |
1.9V @ 15V, 40A |
| Continuous Collector Current |
80A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
110 nC |
| Current - Collector Pulsed (Icm) |
160 A |
| Td (on/off) @ 25°C |
43ns/148ns |
| Reverse Recovery Time (trr) |
86 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |