Showing 3349–3360 of 3680 results
Semikron SKM50GB12T4
In stock
| Manufacturer |
Semikron |
|---|---|
| Mounting Type |
Panel Mount |
| Dimensions |
94 x 34 x 30.1mm |
| Manufacturer Part Number |
22892000 |
| Maximum Collector Emitter Voltage |
1200 V |
| Maximum Gate Emitter Voltage |
±20V |
| Maximum Operating Temperature |
+175 °C |
| Minimum Operating Temperature |
-40 °C |
| Package Type |
SEMITRANS2 |
| Type |
Dual |
| Pin Count |
7 |
| Configuration |
Dual Half Bridge |
| Collector Emitter Saturation Voltage |
1.85V |
| Channel Type |
N |
| Continuous Collector Current |
81A |
| Height (mm) |
30.5 mm |
SemiQ GPA020A120MN-FD
In stock
| Manufacturer |
SemiQ |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-3 |
| Supplier Device Package |
TO-3PN |
| Current-Collector (Ic) (Max) |
40A |
| Test Conditions |
600V, 20A, 10Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
223W |
| Reverse Recovery Time |
425ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
210nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
30ns/150ns |
| Switching Energy |
2.8mJ (on), 480μJ (off) |
| RoHS Status |
ROHS3 Compliant |
SemiQ GPA060A060MN-FD
In stock
| Manufacturer |
SemiQ |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-3 |
| Supplier Device Package |
TO-3PN |
| Current-Collector (Ic) (Max) |
120A |
| Test Conditions |
400V, 60A, 10Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
347W |
| Reverse Recovery Time |
140ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 60A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
225nC |
| Current - Collector Pulsed (Icm) |
180A |
| Td (on/off) @ 25°C |
45ns/150ns |
| Switching Energy |
2.66mJ (on), 1.53mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Shindengen T2R7F90SB-5600
In stock
| Manufacturer |
Shindengen |
|---|---|
| Mount |
Through Hole |
| Number of Pins |
2 |
| Brand |
Shindengen |
| Factory Pack Quantity:Factory Pack Quantity |
100 |
| Packaging |
Bulk |
| Max Operating Temperature |
175 °C |
| Min Operating Temperature |
-55 °C |
| Subcategory |
IGBTs |
| Operating Supply Voltage |
128 V |
| Number of Elements |
1 |
| Polarity |
Bidirectional |
| Leakage Current |
1 µA |
| Clamping Voltage |
207 V |
| Peak Pulse Current |
2.9 A |
| Reverse Standoff Voltage |
128 V |
| Max Surge Current |
2.9 A |
| Peak Pulse Power |
600 W |
| Test Current |
1 mA |
| Breakdown Voltage |
143 V |
| Product Type |
IGBT Transistors |
| Reverse Breakdown Voltage |
143 V |
| Product Category |
IGBT Transistors |
Shindengen T5R4F90SB-5600
In stock
| Manufacturer |
Shindengen |
|---|---|
| Tolerance |
±10% |
| Package / Case |
Radial |
| Dielectric Material |
Polypropylene (PP), Metallized |
| Brand |
Shindengen |
| Factory Pack Quantity:Factory Pack Quantity |
100 |
| Height - Seated (Max) |
0.472 (12.00mm) |
| Lead Free Status / RoHS Status |
— |
| Operating Temperature |
-55°C ~ 105°C |
| Packaging |
Bulk |
| Series |
MKP338 6 |
| Mounting Type |
Through Hole |
| Moisture Sensitivity Level (MSL) |
— |
| Part Status |
Active |
| Termination |
PC Pins |
| Capacitance |
6800pF |
| Subcategory |
IGBTs |
| Lead Spacing |
0.394 (10.00mm) |
| Product Type |
IGBT Transistors |
| Voltage Rating - DC |
1000V (1kV) |
| Features |
— |
| Product Category |
IGBT Transistors |
| Voltage Rating - AC |
300V |
| Ratings |
AEC-Q200, Y2 |
STMicroelectronics STG40M120F3D7
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mounting Type |
Surface Mount |
| Package / Case |
DO-214AC, SMA |
| Supplier Device Package |
DO-214AC (SMA) |
| Packaging |
Tape & Reel (TR) |
| Series |
— |
| Part Status |
Active |
| Base Part Number |
BYG24G |
| Speed |
Fast Recovery = 200mA (Io) |
| Diode Type |
Avalanche |
| Current - Reverse Leakage @ Vr |
1µA @ 400V |
| Voltage - Forward (Vf) (Max) @ If |
1.25V @ 1.5A |
| Operating Temperature - Junction |
-55°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) |
400V |
| Current - Average Rectified (Io) |
1.5A |
| Capacitance @ Vr, F |
— |
| Reverse Recovery Time (trr) |
140ns |
STMicroelectronics STGB10M65DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 10A, 22 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Cut Tape (CT) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
115W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STGB10 |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
115W |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
20A |
| Reverse Recovery Time |
96 ns |
| Max Breakdown Voltage |
650V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 10A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
19ns/91ns |
| Switching Energy |
120μJ (on), 270μJ (off) |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB10NB37LZ
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pbfree Code |
yes |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
440V |
| Number of Elements |
1 |
| Test Conditions |
328V, 10A, 1k Ω, 5V |
| Operating Temperature |
-65°C~175°C TJ |
| Packaging |
Tube |
| Series |
PowerMESH™ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
VOLTAGE CLAMPING |
| Max Power Dissipation |
125W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| JESD-609 Code |
e3 |
| Base Part Number |
STGB10 |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 4.5V, 10A |
| Turn Off Time-Nom (toff) |
17800 ns |
| Element Configuration |
Single |
| Power Dissipation |
125W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
20A |
| Turn On Time |
860 ns |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
1.3μs/8μs |
| Switching Energy |
2.4mJ (on), 5mJ (off) |
| Gate-Emitter Thr Voltage-Max |
2.4V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |