Showing 3361–3372 of 3680 results
STMicroelectronics STGB10NB40LZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Pin Count |
3 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
2.240009g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
440V |
| Number of Elements |
1 |
| Test Conditions |
328V, 10A, 1k Ω, 5V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| JESD-609 Code |
e3 |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
18V |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
20A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STGB10 |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Continuous Collector Current |
20A |
| Turn Off Time-Nom (toff) |
12000 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Rise Time |
270ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.8V |
| Max Collector Current |
20A |
| Max Breakdown Voltage |
440V |
| Turn On Time |
1570 ns |
| Vce(on) (Max) @ Vge, Ic |
1.8V @ 4.5V, 10A |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
28nC |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
1.3μs/8μs |
| Switching Energy |
2.4mJ (on), 5mJ (off) |
| Gate-Emitter Thr Voltage-Max |
2.2V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Power Dissipation |
150W |
| Lead Free |
Lead Free |
STMicroelectronics STGB10NB60ST4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STGB10 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 10A, 1k Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Pbfree Code |
yes |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
80W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
10A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Turn On Time |
1160 ns |
| Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 10A |
| Power Dissipation |
80W |
| Input Type |
Standard |
| Transistor Application |
POWER CONTROL |
| Rise Time |
460ns |
| Drain to Source Voltage (Vdss) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
29A |
| Continuous Drain Current (ID) |
10A |
| Max Breakdown Voltage |
600V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
3 |
| Turn Off Time-Nom (toff) |
3100 ns |
| Gate Charge |
33nC |
| Current - Collector Pulsed (Icm) |
80A |
| Td (on/off) @ 25°C |
700ns/1.2μs |
| Switching Energy |
600μJ (on), 5mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STGB10NC60HDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 5A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| Power Dissipation |
65W |
| Mount |
Surface Mount |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
65W |
| Terminal Form |
GULL WING |
| Base Part Number |
STGB10 |
| Pin Count |
4 |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Part Status |
Active |
| Input Type |
Standard |
| Current - Collector Pulsed (Icm) |
30A |
| Td (on/off) @ 25°C |
14.2ns/72ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
20A |
| Reverse Recovery Time |
22ns |
| Max Breakdown Voltage |
600V |
| Turn On Time |
19 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
247 ns |
| Gate Charge |
19.2nC |
| Transistor Application |
POWER CONTROL |
| Rise Time |
5ns |
| Switching Energy |
31.8μJ (on), 95μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGB10NC60KDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-609 Code |
e3 |
| Contact Plating |
Tin |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
2.240009g |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 5A, 10 Ω, 15V |
| Turn Off Delay Time |
72 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Factory Lead Time |
8 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
65W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
10A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Base Part Number |
STGB10 |
| Pin Count |
3 |
| Series |
PowerMESH™ |
| Element Configuration |
Single |
| Turn On Time |
23 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
| Input Type |
Standard |
| Turn On Delay Time |
17 ns |
| Power - Max |
65W |
| Transistor Application |
POWER CONTROL |
| Rise Time |
6ns |
| Drain to Source Voltage (Vdss) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
20A |
| Reverse Recovery Time |
22 ns |
| Continuous Drain Current (ID) |
10A |
| Max Breakdown Voltage |
600V |
| Power Dissipation |
60W |
| Case Connection |
ISOLATED |
| Turn Off Time-Nom (toff) |
242 ns |
| Gate Charge |
19nC |
| Current - Collector Pulsed (Icm) |
30A |
| Td (on/off) @ 25°C |
17ns/72ns |
| Switching Energy |
55μJ (on), 85μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGB12NB60KDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 12A, 10 Ω, 15V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
125W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Current Rating |
18A |
| JESD-609 Code |
e3 |
| Base Part Number |
STGB12 |
| Reverse Recovery Time |
80 ns |
| Max Breakdown Voltage |
600V |
| Qualification Status |
Not Qualified |
| Element Configuration |
Single |
| Power Dissipation |
125W |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
14.5ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
30A |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Turn On Time |
39.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
461 ns |
| Gate Charge |
54nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
25ns/96ns |
| Switching Energy |
258μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
7V |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Contains Lead |
STMicroelectronics STGB14NC60KDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
390V, 7A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
8 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
80W |
| Current Rating |
25A |
| Base Part Number |
STGB14 |
| Packaging |
Tape & Reel (TR) |
| Power Dissipation |
80W |
| Current - Collector Pulsed (Icm) |
50A |
| Td (on/off) @ 25°C |
22.5ns/116ns |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
25A |
| Reverse Recovery Time |
37 ns |
| Max Breakdown Voltage |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 7A |
| Gate Charge |
34.4nC |
| Input Type |
Standard |
| Rise Time |
8.5ns |
| Switching Energy |
82μJ (on), 155μJ (off) |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGB14NC60KT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 7A, 10 Ω, 15V |
| Turn Off Delay Time |
116 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Termination |
SMD/SMT |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
80W |
| Terminal Position |
DUAL |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
14A |
| JESD-609 Code |
e3 |
| Base Part Number |
STGB14 |
| Continuous Drain Current (ID) |
25A |
| Max Breakdown Voltage |
600V |
| Element Configuration |
Single |
| Power Dissipation |
80W |
| Input Type |
Standard |
| Turn On Delay Time |
22.5 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
8.5ns |
| Drain to Source Voltage (Vdss) |
600V |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
25A |
| Pin Count |
3 |
| JESD-30 Code |
R-PDSO-G2 |
| Turn On Time |
31.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 7A |
| Turn Off Time-Nom (toff) |
340 ns |
| Gate Charge |
34.4nC |
| Td (on/off) @ 25°C |
22.5ns/116ns |
| Switching Energy |
82μJ (on), 155μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGB15H60DF
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Operating Temperature |
-55°C~175°C TJ |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Max Power Dissipation |
115W |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Base Part Number |
STGB15 |
| Packaging |
Cut Tape (CT) |
| Test Conditions |
400V, 15A, 10 Ω, 15V |
| Collector-Emitter Breakdown Voltage |
600V |
| Weight |
2.000002g |
| Number of Pins |
3 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
20 Weeks |
| Input Type |
Standard |
| Gate Charge |
81nC |
| Width |
9.35mm |
| Length |
10.4mm |
| Height |
4.6mm |
| Switching Energy |
136μJ (on), 207μJ (off) |
| Td (on/off) @ 25°C |
24.5ns/118ns |
| Current - Collector Pulsed (Icm) |
60A |
| IGBT Type |
Trench Field Stop |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 15A |
| Max Breakdown Voltage |
600V |
| Reverse Recovery Time |
103 ns |
| Max Collector Current |
30A |
| Collector Emitter Voltage (VCEO) |
600V |
| Power - Max |
115W |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB15M65DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Collector-Emitter Breakdown Voltage |
650V |
| Test Conditions |
400V, 15A, 12 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
136W |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Factory Lead Time |
30 Weeks |
| Input Type |
Standard |
| Base Part Number |
STGB15 |
| Power - Max |
136W |
| Collector Emitter Voltage (VCEO) |
2V |
| Max Collector Current |
30A |
| Reverse Recovery Time |
142 ns |
| Max Breakdown Voltage |
650V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 15A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
45nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
24ns/93ns |
| Switching Energy |
90μJ (on), 450μJ (off) |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB18N40LZT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
420V |
| Number of Elements |
1 |
| Test Conditions |
300V, 10A, 5V |
| Turn Off Delay Time |
13.5 μs |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Operating Temperature |
-55°C~175°C TJ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Additional Feature |
VOLTAGE CLAMPING |
| Max Power Dissipation |
150W |
| Terminal Form |
GULL WING |
| Base Part Number |
STGB18 |
| Pin Count |
4 |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Turn Off Time-Nom (toff) |
22200 ns |
| Gate Charge |
29nC |
| Turn On Delay Time |
650 ns |
| Power - Max |
150W |
| Transistor Application |
AUTOMOTIVE IGNITION |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
360V |
| Max Collector Current |
30A |
| Max Breakdown Voltage |
420V |
| Turn On Time |
4450 ns |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 4.5V, 10A |
| Case Connection |
COLLECTOR |
| Element Configuration |
Single |
| Current - Collector Pulsed (Icm) |
40A |
| Td (on/off) @ 25°C |
650ns/13.5μs |
| Gate-Emitter Voltage-Max |
16V |
| Height |
4.6mm |
| Length |
10.4mm |
| Width |
9.35mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Logic |
| Lead Free |
Lead Free |
STMicroelectronics STGB19NC60HDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STGB19 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 12A, 10 Ω, 15V |
| Turn Off Delay Time |
97 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PowerMESH™ |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Max Power Dissipation |
130W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Turn On Time |
32 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 12A |
| Input Type |
Standard |
| Turn On Delay Time |
25 ns |
| Power - Max |
130W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
40A |
| Reverse Recovery Time |
31 ns |
| Max Breakdown Voltage |
600V |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Turn Off Time-Nom (toff) |
272 ns |
| Gate Charge |
53nC |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
25ns/97ns |
| Switching Energy |
85μJ (on), 189μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STGB19NC60KDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Packaging |
Tape & Reel (TR) |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 12A, 10 Ω, 15V |
| Pin Count |
4 |
| Operating Temperature |
-55°C~150°C TJ |
| Series |
PowerMESH™ |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
125W |
| Terminal Form |
GULL WING |
| Base Part Number |
STGB19 |
| Contact Plating |
Tin |
| Factory Lead Time |
8 Weeks |
| Turn On Time |
38 ns |
| Element Configuration |
Single |
| Power - Max |
125W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
35A |
| Reverse Recovery Time |
31 ns |
| Max Breakdown Voltage |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.75V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
270 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
55nC |
| Current - Collector Pulsed (Icm) |
75A |
| Td (on/off) @ 25°C |
30ns/105ns |
| Switching Energy |
165μJ (on), 255μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |