Showing 3409–3420 of 3680 results
STMicroelectronics STGB6M65DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mounting Type |
Surface Mount |
| Current-Collector (Ic) (Max) |
12A |
| Test Conditions |
400V, 6A, 22 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
M |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Base Part Number |
STGB6 |
| Input Type |
Standard |
| Power - Max |
88W |
| Reverse Recovery Time |
140ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 6A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
21.2nC |
| Current - Collector Pulsed (Icm) |
24A |
| Td (on/off) @ 25°C |
15ns/90ns |
| Switching Energy |
36μJ (on), 200μJ (off) |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB7NB60HDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 7A, 10 Ω, 15V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| JESD-609 Code |
e3 |
| Base Part Number |
STGB7 |
| Part Status |
Obsolete |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
80W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Reach Compliance Code |
not_compliant |
| Current Rating |
7A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Reverse Recovery Time |
100ns |
| JESD-30 Code |
R-PSSO-G2 |
| Element Configuration |
Single |
| Power Dissipation |
80W |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Rise Time |
48ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.8V |
| Max Collector Current |
14A |
| Max Breakdown Voltage |
600V |
| Turn On Time |
63 ns |
| Pin Count |
4 |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 7A |
| Turn Off Time-Nom (toff) |
220 ns |
| Gate Charge |
42nC |
| Current - Collector Pulsed (Icm) |
56A |
| Td (on/off) @ 25°C |
15ns/75ns |
| Switching Energy |
85μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5V |
| RoHS Status |
ROHS3 Compliant |
| Qualification Status |
Not Qualified |
| Lead Free |
Contains Lead |
STMicroelectronics STGB7NC60HDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Base Part Number |
STGB7 |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 7A, 10 Ω, 15V |
| Turn Off Delay Time |
72 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Series |
PowerMESH™ |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
80W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
245 |
| Current Rating |
14A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Max Breakdown Voltage |
600V |
| Turn On Time |
25.5 ns |
| Power Dissipation |
25W |
| Input Type |
Standard |
| Turn On Delay Time |
18.5 ns |
| Power - Max |
80W |
| Transistor Application |
POWER CONTROL |
| Rise Time |
8.5ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
25A |
| Reverse Recovery Time |
37 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Pin Count |
4 |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 7A |
| Turn Off Time-Nom (toff) |
221 ns |
| Gate Charge |
35nC |
| Current - Collector Pulsed (Icm) |
50A |
| Td (on/off) @ 25°C |
18.5ns/72ns |
| Switching Energy |
95μJ (on), 115μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Element Configuration |
Single |
| Lead Free |
Lead Free |
STMicroelectronics STGB8NC60KDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 3A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Element Configuration |
Single |
| Factory Lead Time |
8 Weeks |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
65W |
| Terminal Form |
GULL WING |
| Base Part Number |
STGB8 |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Packaging |
Tape & Reel (TR) |
| Case Connection |
COLLECTOR |
| Turn Off Time-Nom (toff) |
242 ns |
| Gate Charge |
19nC |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
15A |
| Reverse Recovery Time |
23.5 ns |
| Max Breakdown Voltage |
600V |
| Turn On Time |
23 ns |
| Vce(on) (Max) @ Vge, Ic |
2.75V @ 15V, 3A |
| Input Type |
Standard |
| Power - Max |
65W |
| Current - Collector Pulsed (Icm) |
30A |
| Td (on/off) @ 25°C |
17ns/72ns |
| Switching Energy |
55μJ (on), 85μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGB8NC60KT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
390V, 3A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
65W |
| Base Part Number |
STGB8 |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
65W |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
15A |
| Max Breakdown Voltage |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.75V @ 15V, 3A |
| Gate Charge |
19nC |
| Current - Collector Pulsed (Icm) |
30A |
| Td (on/off) @ 25°C |
17ns/72ns |
| Switching Energy |
55μJ (on), 85μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGBL6NC60DIT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 3A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
4 |
| Mount |
Surface Mount |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Max Power Dissipation |
56W |
| Terminal Form |
GULL WING |
| Base Part Number |
STGBL6 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Turn On Time |
10.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 3A |
| Power - Max |
56W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
23 ns |
| Max Breakdown Voltage |
600V |
| Element Configuration |
Single |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
122 ns |
| Gate Charge |
12nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
6.7ns/46ns |
| Switching Energy |
32μJ (on), 24μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGBL6NC60DT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 3A, 10 Ω, 15V |
| Turn Off Delay Time |
67 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Pin Count |
4 |
| Mount |
Surface Mount |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Max Power Dissipation |
56W |
| Terminal Form |
GULL WING |
| Base Part Number |
STGBL6 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Turn On Time |
10.5 ns |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 3A |
| Turn On Delay Time |
6.7 ns |
| Power - Max |
56W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
14A |
| Reverse Recovery Time |
50 ns |
| Max Breakdown Voltage |
600V |
| Element Configuration |
Single |
| Input Type |
Standard |
| Turn Off Time-Nom (toff) |
122 ns |
| Gate Charge |
12nC |
| Current - Collector Pulsed (Icm) |
18A |
| Td (on/off) @ 25°C |
6.7ns/46ns |
| Switching Energy |
46.5μJ (on), 23.5μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGD10HF60KD
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
Automotive, AEC-Q101 |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Max Power Dissipation |
62.5W |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| ECCN Code |
EAR99 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Part Status |
Active |
| Reach Compliance Code |
not_compliant |
| JESD-609 Code |
e3 |
| Packaging |
Cut Tape (CT) |
| Operating Temperature |
-55°C~150°C TJ |
| Test Conditions |
400V, 5A, 10 Ω, 15V |
| Collector-Emitter Breakdown Voltage |
600V |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Factory Lead Time |
8 Weeks |
| Base Part Number |
STGD10 |
| Vce(on) (Max) @ Vge, Ic |
2.75V @ 15V, 5A |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Gate-Emitter Voltage-Max |
20V |
| Switching Energy |
45μJ (on), 105μJ (off) |
| Td (on/off) @ 25°C |
9.5ns/87ns |
| Current - Collector Pulsed (Icm) |
30A |
| Gate Charge |
23nC |
| Max Breakdown Voltage |
600V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Reverse Recovery Time |
50 ns |
| Max Collector Current |
18A |
| Collector Emitter Voltage (VCEO) |
2.75V |
| Polarity/Channel Type |
N-CHANNEL |
| Power - Max |
62.5W |
| Input Type |
Standard |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGD10NC60HDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 5A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| Base Part Number |
STGD10 |
| Mount |
Surface Mount |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Max Power Dissipation |
62W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Reach Compliance Code |
not_compliant |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-609 Code |
e3 |
| Pin Count |
3 |
| JEDEC-95 Code |
TO-252AA |
| Max Breakdown Voltage |
600V |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
62W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
20A |
| Reverse Recovery Time |
22 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Qualification Status |
Not Qualified |
| Turn On Time |
19 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
| Turn Off Time-Nom (toff) |
247 ns |
| Gate Charge |
19.2nC |
| Current - Collector Pulsed (Icm) |
30A |
| Td (on/off) @ 25°C |
14.2ns/72ns |
| Switching Energy |
31.8μJ (on), 95μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGD10NC60HT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Series |
PowerMESH™ |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 5A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Peak Reflow Temperature (Cel) |
260 |
| Factory Lead Time |
8 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Max Power Dissipation |
60W |
| Terminal Form |
GULL WING |
| Packaging |
Tape & Reel (TR) |
| Base Part Number |
STGD10 |
| Turn On Time |
19 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
60W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
20A |
| Max Breakdown Voltage |
600V |
| Pin Count |
3 |
| JESD-30 Code |
R-PSSO-G2 |
| Turn Off Time-Nom (toff) |
247 ns |
| Gate Charge |
19.2nC |
| Td (on/off) @ 25°C |
14.2ns/72ns |
| Switching Energy |
31.8μJ (on), 95μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
STMicroelectronics STGD10NC60KT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Number of Pins |
3 |
| Weight |
350.003213mg |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
390V, 5A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| Base Part Number |
STGD10 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) |
| Additional Feature |
ULTRA FAST |
| Max Power Dissipation |
60W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Turn Off Time-Nom (toff) |
242 ns |
| JESD-30 Code |
R-PSSO-G2 |
| Input Type |
Standard |
| Power - Max |
60W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
20A |
| Turn On Time |
23 ns |
| Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
| Gate Charge |
19nC |
| Current - Collector Pulsed (Icm) |
30A |
| Pin Count |
3 |
| Td (on/off) @ 25°C |
17ns/72ns |
| Switching Energy |
55μJ (on), 85μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6.5V |
| Height |
2.4mm |
| Length |
6.6mm |
| Width |
6.2mm |
| Radiation Hardening |
No |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGD10NC60SDT4
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Part Status |
Obsolete |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
390V, 5A, 10 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Series |
PowerMESH™ |
| Base Part Number |
STGD10 |
| JESD-609 Code |
e3 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Matte Tin (Sn) – annealed |
| Additional Feature |
ULTRA FAST |
| Max Power Dissipation |
60W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Max Breakdown Voltage |
600V |
| JESD-30 Code |
R-PSSO-G2 |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
60W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
18A |
| Reverse Recovery Time |
22 ns |
| Turn On Time |
22.5 ns |
| Vce(on) (Max) @ Vge, Ic |
1.65V @ 15V, 5A |
| Pin Count |
3 |
| Turn Off Time-Nom (toff) |
560 ns |
| Gate Charge |
18nC |
| Current - Collector Pulsed (Icm) |
25A |
| Td (on/off) @ 25°C |
19ns/160ns |
| Switching Energy |
60μJ (on), 340μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
5.75V |
| Radiation Hardening |
No |
| Element Configuration |
Single |
| RoHS Status |
ROHS3 Compliant |