Showing 3433–3444 of 3680 results

Transistors - IGBTs - Single

STMicroelectronics STGD5H60DF

In stock

SKU: STGD5H60DF-9
Manufacturer

STMicroelectronics

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mount

Surface Mount

Mounting Type

Surface Mount

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 5A, 47 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

83W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

20 Weeks

Input Type

Standard

Base Part Number

STGD5

Power - Max

83W

Collector Emitter Voltage (VCEO)

1.95V

Max Collector Current

10A

Reverse Recovery Time

134.5 ns

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

1.95V @ 15V, 5A

IGBT Type

Trench Field Stop

Gate Charge

43nC

Current - Collector Pulsed (Icm)

20A

Td (on/off) @ 25°C

30ns/140ns

Switching Energy

56μJ (on), 78.5μJ (off)

RoHS Status

ROHS3 Compliant

STMicroelectronics STGD5NB120SZ-1

In stock

SKU: STGD5NB120SZ-1-9
Manufacturer

STMicroelectronics

Packaging

Tube

Mount

Surface Mount, Through Hole

Mounting Type

Through Hole

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 5A, 1k Ω, 15V

Turn Off Delay Time

12.1 μs

Time@Peak Reflow Temperature-Max (s)

30

Factory Lead Time

8 Weeks

Series

PowerMESH™

JESD-609 Code

e3

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

75W

Peak Reflow Temperature (Cel)

260

Operating Temperature

-55°C~150°C TJ

Base Part Number

STGD5

Voltage - Collector Emitter Breakdown (Max)

1200V

Max Breakdown Voltage

1.2kV

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

690 ns

Power - Max

75W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

10A

Pin Count

3

Element Configuration

Single

Turn On Time

850 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 5A

Turn Off Time-Nom (toff)

14100 ns

Td (on/off) @ 25°C

690ns/12.1μs

Switching Energy

2.59mJ (on), 9mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STGD5NB120SZT4

In stock

SKU: STGD5NB120SZT4-9
Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

3.949996g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 5A, 1k Ω, 15V

Turn Off Delay Time

12.1 μs

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Voltage - Rated DC

1.2kV

Max Power Dissipation

75W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

5A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STGD5

Pin Count

3

Contact Plating

Tin

Factory Lead Time

8 Weeks

Turn On Time

850 ns

Power Dissipation

55W

Input Type

Standard

Turn On Delay Time

690 ns

Power - Max

75W

Transistor Application

POWER CONTROL

Rise Time

170ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

10A

JEDEC-95 Code

TO-252AA

Voltage - Collector Emitter Breakdown (Max)

1200V

Max Breakdown Voltage

1.2kV

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 5A

Continuous Collector Current

5A

Element Configuration

Single

Turn Off Time-Nom (toff)

14100 ns

Td (on/off) @ 25°C

690ns/12.1μs

Switching Energy

2.59mJ (on), 9mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Height

2.4mm

Length

6.6mm

Width

6.2mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

STMicroelectronics STGD6M65DF2

In stock

SKU: STGD6M65DF2-9
Manufacturer

STMicroelectronics

Base Part Number

STGD6

Mounting Type

Surface Mount

Current-Collector (Ic) (Max)

12A

Test Conditions

400V, 6A, 22 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tape & Reel (TR)

Series

M

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Factory Lead Time

30 Weeks

Power - Max

88W

Input Type

Standard

Reverse Recovery Time

140ns

Voltage - Collector Emitter Breakdown (Max)

650V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 6A

IGBT Type

Trench Field Stop

Gate Charge

21.2nC

Current - Collector Pulsed (Icm)

24A

Td (on/off) @ 25°C

15ns/90ns

Switching Energy

36μJ (on), 200μJ (off)

RoHS Status

ROHS3 Compliant

STMicroelectronics STGD6NC60HDT4

In stock

SKU: STGD6NC60HDT4-9
Manufacturer

STMicroelectronics

Pin Count

3

Mounting Type

Surface Mount

Number of Pins

3

Weight

350.003213mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 3A, 10 Ω, 15V

Turn Off Delay Time

40 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-609 Code

e3

Part Status

Active

Series

PowerMESH™

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Voltage - Rated DC

600V

Max Power Dissipation

56W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

15A

Time@Peak Reflow Temperature-Max (s)

30

Base Part Number

STGD6

Mount

Surface Mount

Factory Lead Time

8 Weeks

Continuous Collector Current

6A

Turn Off Time-Nom (toff)

222 ns

Input Type

Standard

Turn On Delay Time

12 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

15A

Reverse Recovery Time

21 ns

JEDEC-95 Code

TO-252AA

Max Breakdown Voltage

600V

Turn On Time

17.3 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 3A

Element Configuration

Single

JESD-30 Code

R-PSSO-G2

Gate Charge

13.6nC

Current - Collector Pulsed (Icm)

21A

Td (on/off) @ 25°C

12ns/76ns

Switching Energy

20μJ (on), 68μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Height

2.4mm

Length

6.6mm

Width

6.2mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Power Dissipation

50W

Lead Free

Lead Free

STMicroelectronics STGD6NC60HT4

In stock

SKU: STGD6NC60HT4-9
Manufacturer

STMicroelectronics

Part Status

Obsolete

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 3A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Current Rating

15A

Mount

Surface Mount

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

600V

Max Power Dissipation

56W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

not_compliant

JESD-609 Code

e3

Time@Peak Reflow Temperature-Max (s)

30

Max Breakdown Voltage

600V

Turn On Time

17.3 ns

JESD-30 Code

R-PSSO-G2

Qualification Status

Not Qualified

Element Configuration

Single

Power Dissipation

56W

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

15A

Base Part Number

STGD6

Pin Count

3

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 3A

Turn Off Time-Nom (toff)

222 ns

Gate Charge

13.6nC

Current - Collector Pulsed (Icm)

21A

Td (on/off) @ 25°C

12ns/76ns

Switching Energy

20μJ (on), 68μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STGD7NB120S-1

In stock

SKU: STGD7NB120S-1-9
Manufacturer

STMicroelectronics

Series

PowerMESH™

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

960V, 7A, 1k Ω, 15V

Operating Temperature

150°C TJ

Base Part Number

STGD7

Packaging

Tube

JESD-609 Code

e0

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin/Lead (Sn/Pb)

Max Power Dissipation

55W

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

840 ns

Element Configuration

Single

Power - Max

55W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

10A

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 7A

Gate Charge

29nC

Pin Count

3

Current - Collector Pulsed (Icm)

20A

Td (on/off) @ 25°C

570ns/-

Switching Energy

15mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Radiation Hardening

No

Input Type

Standard

RoHS Status

ROHS3 Compliant

STMicroelectronics STGD7NB60KT4

In stock

SKU: STGD7NB60KT4-9
Manufacturer

STMicroelectronics

Part Status

Obsolete

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 7A, 10 Ω, 15V

Operating Temperature

150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Time@Peak Reflow Temperature-Max (s)

30

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Voltage - Rated DC

600V

Max Power Dissipation

70W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

7A

Mounting Type

Surface Mount

Mount

Surface Mount

Max Breakdown Voltage

600V

Pin Count

3

Element Configuration

Single

Power Dissipation

70W

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

14A

JEDEC-95 Code

TO-252AA

Turn On Time

21 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 7A

Base Part Number

STGD7

Turn Off Time-Nom (toff)

202 ns

Gate Charge

32.7nC

Current - Collector Pulsed (Icm)

56A

Td (on/off) @ 25°C

15ns/50ns

Switching Energy

95μJ (on), 140μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Radiation Hardening

No

JESD-30 Code

R-PSSO-G2

RoHS Status

Non-RoHS Compliant

STMicroelectronics STGD8NC60KDT4

In stock

SKU: STGD8NC60KDT4-9
Manufacturer

STMicroelectronics

Packaging

Tape & Reel (TR)

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

350.003213mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 3A, 10 Ω, 15V

Turn Off Delay Time

72 ns

Element Configuration

Single

Factory Lead Time

8 Weeks

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Max Power Dissipation

62W

Terminal Form

GULL WING

Base Part Number

STGD8

Pin Count

3

JESD-30 Code

R-PSSO-G2

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

242 ns

Gate Charge

19nC

Power - Max

62W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

15A

Reverse Recovery Time

23.5 ns

Max Breakdown Voltage

600V

Turn On Time

23 ns

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 3A

Input Type

Standard

Turn On Delay Time

17 ns

Current - Collector Pulsed (Icm)

30A

Td (on/off) @ 25°C

17ns/72ns

Switching Energy

55μJ (on), 85μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

2.4mm

Length

6.6mm

Width

6.2mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STGD8NC60KT4

In stock

SKU: STGD8NC60KT4-9
Manufacturer

STMicroelectronics

Base Part Number

STGD8

Mounting Type

Surface Mount

Collector-Emitter Breakdown Voltage

600V

Test Conditions

390V, 3A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Max Power Dissipation

62W

Peak Reflow Temperature (Cel)

225

Mount

Surface Mount

Input Type

Standard

Element Configuration

Single

Power - Max

62W

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

15A

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 3A

Gate Charge

19nC

Current - Collector Pulsed (Icm)

30A

Td (on/off) @ 25°C

17ns/72ns

Switching Energy

55μJ (on), 85μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

STMicroelectronics STGDL6NC60DIT4

In stock

SKU: STGDL6NC60DIT4-9
Manufacturer

STMicroelectronics

Series

PowerMESH™

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 3A, 10 Ω, 15V

Turn Off Delay Time

67 ns

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSSO-G2

Mount

Surface Mount

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Max Power Dissipation

50W

Terminal Form

GULL WING

Base Part Number

STGDL6

Pin Count

3

Packaging

Tape & Reel (TR)

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 3A

Turn Off Time-Nom (toff)

122 ns

Power - Max

50W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

13A

Reverse Recovery Time

23 ns

Max Breakdown Voltage

600V

Turn On Time

10.5 ns

Input Type

Standard

Turn On Delay Time

6.7 ns

Gate Charge

12nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

6.7ns/46ns

Switching Energy

32μJ (on), 24μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STGDL6NC60DT4

In stock

SKU: STGDL6NC60DT4-9
Manufacturer

STMicroelectronics

Pbfree Code

yes

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 3A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Base Part Number

STGDL6

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Matte Tin (Sn) – annealed

Max Power Dissipation

50W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

not_compliant

Time@Peak Reflow Temperature-Max (s)

30

Mounting Type

Surface Mount

Mount

Surface Mount

JEDEC-95 Code

TO-252AA

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Input Type

Standard

Power - Max

50W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

13A

Reverse Recovery Time

30 ns

Max Breakdown Voltage

600V

Turn On Time

10.5 ns

Pin Count

3

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 3A

Turn Off Time-Nom (toff)

122 ns

Gate Charge

12nC

Current - Collector Pulsed (Icm)

25A

Td (on/off) @ 25°C

6.7ns/46ns

Switching Energy

46.5μJ (on), 23.5μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Qualification Status

Not Qualified

RoHS Status

ROHS3 Compliant