Showing 3433–3444 of 3680 results
Transistors - IGBTs - Single
STMicroelectronics STGD5H60DF
In stock
Manufacturer |
STMicroelectronics |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 5A, 47 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
83W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
20 Weeks |
Input Type |
Standard |
Base Part Number |
STGD5 |
Power - Max |
83W |
Collector Emitter Voltage (VCEO) |
1.95V |
Max Collector Current |
10A |
Reverse Recovery Time |
134.5 ns |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 5A |
IGBT Type |
Trench Field Stop |
Gate Charge |
43nC |
Current - Collector Pulsed (Icm) |
20A |
Td (on/off) @ 25°C |
30ns/140ns |
Switching Energy |
56μJ (on), 78.5μJ (off) |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGD5NB120SZ-1
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mount |
Surface Mount, Through Hole |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 5A, 1k Ω, 15V |
Turn Off Delay Time |
12.1 μs |
Time@Peak Reflow Temperature-Max (s) |
30 |
Factory Lead Time |
8 Weeks |
Series |
PowerMESH™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
75W |
Peak Reflow Temperature (Cel) |
260 |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
STGD5 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Max Breakdown Voltage |
1.2kV |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
690 ns |
Power - Max |
75W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
10A |
Pin Count |
3 |
Element Configuration |
Single |
Turn On Time |
850 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 5A |
Turn Off Time-Nom (toff) |
14100 ns |
Td (on/off) @ 25°C |
690ns/12.1μs |
Switching Energy |
2.59mJ (on), 9mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGD5NB120SZT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
3.949996g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 5A, 1k Ω, 15V |
Turn Off Delay Time |
12.1 μs |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-30 Code |
R-PSSO-G2 |
Series |
PowerMESH™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
1.2kV |
Max Power Dissipation |
75W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
5A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
STGD5 |
Pin Count |
3 |
Contact Plating |
Tin |
Factory Lead Time |
8 Weeks |
Turn On Time |
850 ns |
Power Dissipation |
55W |
Input Type |
Standard |
Turn On Delay Time |
690 ns |
Power - Max |
75W |
Transistor Application |
POWER CONTROL |
Rise Time |
170ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
10A |
JEDEC-95 Code |
TO-252AA |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Max Breakdown Voltage |
1.2kV |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 5A |
Continuous Collector Current |
5A |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
14100 ns |
Td (on/off) @ 25°C |
690ns/12.1μs |
Switching Energy |
2.59mJ (on), 9mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Height |
2.4mm |
Length |
6.6mm |
Width |
6.2mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
STMicroelectronics STGD6M65DF2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STGD6 |
Mounting Type |
Surface Mount |
Current-Collector (Ic) (Max) |
12A |
Test Conditions |
400V, 6A, 22 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
M |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Factory Lead Time |
30 Weeks |
Power - Max |
88W |
Input Type |
Standard |
Reverse Recovery Time |
140ns |
Voltage - Collector Emitter Breakdown (Max) |
650V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 6A |
IGBT Type |
Trench Field Stop |
Gate Charge |
21.2nC |
Current - Collector Pulsed (Icm) |
24A |
Td (on/off) @ 25°C |
15ns/90ns |
Switching Energy |
36μJ (on), 200μJ (off) |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGD6NC60HDT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Pin Count |
3 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
350.003213mg |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 3A, 10 Ω, 15V |
Turn Off Delay Time |
40 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
JESD-609 Code |
e3 |
Part Status |
Active |
Series |
PowerMESH™ |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
56W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
15A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Base Part Number |
STGD6 |
Mount |
Surface Mount |
Factory Lead Time |
8 Weeks |
Continuous Collector Current |
6A |
Turn Off Time-Nom (toff) |
222 ns |
Input Type |
Standard |
Turn On Delay Time |
12 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
15A |
Reverse Recovery Time |
21 ns |
JEDEC-95 Code |
TO-252AA |
Max Breakdown Voltage |
600V |
Turn On Time |
17.3 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 3A |
Element Configuration |
Single |
JESD-30 Code |
R-PSSO-G2 |
Gate Charge |
13.6nC |
Current - Collector Pulsed (Icm) |
21A |
Td (on/off) @ 25°C |
12ns/76ns |
Switching Energy |
20μJ (on), 68μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
2.4mm |
Length |
6.6mm |
Width |
6.2mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
50W |
Lead Free |
Lead Free |
STMicroelectronics STGD6NC60HT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Part Status |
Obsolete |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 3A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
PowerMESH™ |
Current Rating |
15A |
Mount |
Surface Mount |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
56W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Reach Compliance Code |
not_compliant |
JESD-609 Code |
e3 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Max Breakdown Voltage |
600V |
Turn On Time |
17.3 ns |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Power Dissipation |
56W |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
15A |
Base Part Number |
STGD6 |
Pin Count |
3 |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 3A |
Turn Off Time-Nom (toff) |
222 ns |
Gate Charge |
13.6nC |
Current - Collector Pulsed (Icm) |
21A |
Td (on/off) @ 25°C |
12ns/76ns |
Switching Energy |
20μJ (on), 68μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGD7NB120S-1
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 7A, 1k Ω, 15V |
Operating Temperature |
150°C TJ |
Base Part Number |
STGD7 |
Packaging |
Tube |
JESD-609 Code |
e0 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Max Power Dissipation |
55W |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
840 ns |
Element Configuration |
Single |
Power - Max |
55W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
10A |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 7A |
Gate Charge |
29nC |
Pin Count |
3 |
Current - Collector Pulsed (Icm) |
20A |
Td (on/off) @ 25°C |
570ns/- |
Switching Energy |
15mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Radiation Hardening |
No |
Input Type |
Standard |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGD7NB60KT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Part Status |
Obsolete |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 7A, 10 Ω, 15V |
Operating Temperature |
150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
PowerMESH™ |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-609 Code |
e3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
70W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
7A |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
Max Breakdown Voltage |
600V |
Pin Count |
3 |
Element Configuration |
Single |
Power Dissipation |
70W |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
14A |
JEDEC-95 Code |
TO-252AA |
Turn On Time |
21 ns |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 7A |
Base Part Number |
STGD7 |
Turn Off Time-Nom (toff) |
202 ns |
Gate Charge |
32.7nC |
Current - Collector Pulsed (Icm) |
56A |
Td (on/off) @ 25°C |
15ns/50ns |
Switching Energy |
95μJ (on), 140μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
7V |
Radiation Hardening |
No |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
Non-RoHS Compliant |
STMicroelectronics STGD8NC60KDT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tape & Reel (TR) |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
350.003213mg |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 3A, 10 Ω, 15V |
Turn Off Delay Time |
72 ns |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
Series |
PowerMESH™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Max Power Dissipation |
62W |
Terminal Form |
GULL WING |
Base Part Number |
STGD8 |
Pin Count |
3 |
JESD-30 Code |
R-PSSO-G2 |
Operating Temperature |
-55°C~150°C TJ |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
242 ns |
Gate Charge |
19nC |
Power - Max |
62W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
15A |
Reverse Recovery Time |
23.5 ns |
Max Breakdown Voltage |
600V |
Turn On Time |
23 ns |
Vce(on) (Max) @ Vge, Ic |
2.75V @ 15V, 3A |
Input Type |
Standard |
Turn On Delay Time |
17 ns |
Current - Collector Pulsed (Icm) |
30A |
Td (on/off) @ 25°C |
17ns/72ns |
Switching Energy |
55μJ (on), 85μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
2.4mm |
Length |
6.6mm |
Width |
6.2mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGD8NC60KT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STGD8 |
Mounting Type |
Surface Mount |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
390V, 3A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
PowerMESH™ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
62W |
Peak Reflow Temperature (Cel) |
225 |
Mount |
Surface Mount |
Input Type |
Standard |
Element Configuration |
Single |
Power - Max |
62W |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
15A |
Max Breakdown Voltage |
600V |
Vce(on) (Max) @ Vge, Ic |
2.75V @ 15V, 3A |
Gate Charge |
19nC |
Current - Collector Pulsed (Icm) |
30A |
Td (on/off) @ 25°C |
17ns/72ns |
Switching Energy |
55μJ (on), 85μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGDL6NC60DIT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 3A, 10 Ω, 15V |
Turn Off Delay Time |
67 ns |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSSO-G2 |
Mount |
Surface Mount |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Max Power Dissipation |
50W |
Terminal Form |
GULL WING |
Base Part Number |
STGDL6 |
Pin Count |
3 |
Packaging |
Tape & Reel (TR) |
Element Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 3A |
Turn Off Time-Nom (toff) |
122 ns |
Power - Max |
50W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
13A |
Reverse Recovery Time |
23 ns |
Max Breakdown Voltage |
600V |
Turn On Time |
10.5 ns |
Input Type |
Standard |
Turn On Delay Time |
6.7 ns |
Gate Charge |
12nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
6.7ns/46ns |
Switching Energy |
32μJ (on), 24μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGDL6NC60DT4
In stock
Manufacturer |
STMicroelectronics |
---|---|
Pbfree Code |
yes |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 3A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Series |
PowerMESH™ |
Base Part Number |
STGDL6 |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Matte Tin (Sn) – annealed |
Max Power Dissipation |
50W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Reach Compliance Code |
not_compliant |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mounting Type |
Surface Mount |
Mount |
Surface Mount |
JEDEC-95 Code |
TO-252AA |
JESD-30 Code |
R-PSSO-G2 |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
50W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
13A |
Reverse Recovery Time |
30 ns |
Max Breakdown Voltage |
600V |
Turn On Time |
10.5 ns |
Pin Count |
3 |
Vce(on) (Max) @ Vge, Ic |
2.9V @ 15V, 3A |
Turn Off Time-Nom (toff) |
122 ns |
Gate Charge |
12nC |
Current - Collector Pulsed (Icm) |
25A |
Td (on/off) @ 25°C |
6.7ns/46ns |
Switching Energy |
46.5μJ (on), 23.5μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |