Showing 3445–3456 of 3680 results

Transistors - IGBTs - Single

STMicroelectronics STGF10M65DF2

In stock

SKU: STGF10M65DF2-9
Manufacturer

STMicroelectronics

Factory Lead Time

30 Weeks

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Current-Collector (Ic) (Max)

20A

Test Conditions

400V, 10A, 22 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Series

M

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGF10

Input Type

Standard

Power - Max

30W

Reverse Recovery Time

96ns

Voltage - Collector Emitter Breakdown (Max)

650V

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 10A

IGBT Type

Trench Field Stop

Gate Charge

28nC

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

19ns/91ns

Switching Energy

120μJ (on), 270μJ (off)

RoHS Status

ROHS3 Compliant

STMicroelectronics STGF10NB60SD

In stock

SKU: STGF10NB60SD-9
Manufacturer

STMicroelectronics

Part Status

Active

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 1k Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Series

PowerMESH™

Case Connection

ISOLATED

JESD-609 Code

e3

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Voltage - Rated DC

600V

Max Power Dissipation

25W

Current Rating

10A

Base Part Number

STGF10

Pin Count

3

Element Configuration

Single

Power Dissipation

25W

Mount

Through Hole

Factory Lead Time

8 Weeks

Turn Off Time-Nom (toff)

3100 ns

Transistor Application

POWER CONTROL

Drain to Source Voltage (Vdss)

600V

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

23A

Reverse Recovery Time

37ns

Continuous Drain Current (ID)

20A

JEDEC-95 Code

TO-220AB

Max Breakdown Voltage

600V

Turn On Time

1160 ns

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 10A

Gate Charge

33nC

Current - Collector Pulsed (Icm)

80A

Input Type

Standard

Td (on/off) @ 25°C

700ns/1.2μs

Switching Energy

600μJ (on), 5mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5V

Height

20mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

460ns

Lead Free

Lead Free

STMicroelectronics STGF10NC60HD

In stock

SKU: STGF10NC60HD-9
Manufacturer

STMicroelectronics

JESD-609 Code

e3

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 5A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Power Dissipation

23W

Mount

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Max Power Dissipation

24W

Base Part Number

STGF10

Pin Count

3

Element Configuration

Single

Series

PowerMESH™

Input Type

Standard

Gate Charge

19.2nC

Current - Collector Pulsed (Icm)

30A

Rise Time

6ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

9A

Reverse Recovery Time

22 ns

JEDEC-95 Code

TO-220AB

Turn On Time

19 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 5A

Turn Off Time-Nom (toff)

247 ns

Power - Max

24W

Transistor Application

MOTOR CONTROL

Td (on/off) @ 25°C

14.2ns/72ns

Switching Energy

31.8μJ (on), 95μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Height

16.4mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

STMicroelectronics STGF10NC60SD

In stock

SKU: STGF10NC60SD-9
Manufacturer

STMicroelectronics

Series

PowerMESH™

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 5A, 10 Ω, 15V

Turn Off Delay Time

160 ns

Operating Temperature

-55°C~150°C TJ

Pin Count

3

Packaging

Tube

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn) – annealed

Additional Feature

ULTRA FAST

Max Power Dissipation

25W

Base Part Number

STGF10

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

22.5 ns

Power Dissipation

25W

Input Type

Standard

Turn On Delay Time

19 ns

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

10A

Reverse Recovery Time

22 ns

JEDEC-95 Code

TO-220AB

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 5A

Turn Off Time-Nom (toff)

560 ns

Element Configuration

Single

Gate Charge

18nC

Current - Collector Pulsed (Icm)

25A

Td (on/off) @ 25°C

19ns/160ns

Switching Energy

60μJ (on), 340μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Case Connection

ISOLATED

Lead Free

Lead Free

STMicroelectronics STGF12NB60KD

In stock

SKU: STGF12NB60KD-9
Manufacturer

STMicroelectronics

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 12A, 10 Ω, 15V

Packaging

Tape & Reel (TR)

Series

PowerMESH™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

3 (168 Hours)

Max Power Dissipation

30W

Reach Compliance Code

unknown

Base Part Number

STGF12

Input Type

Standard

Power - Max

30W

Collector Emitter Voltage (VCEO)

2.8V

Max Collector Current

14A

Reverse Recovery Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 12A

Gate Charge

54nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

25ns/96ns

Switching Energy

152μJ (on), 258μJ (off)

RoHS Status

ROHS3 Compliant

STMicroelectronics STGF14N60D

In stock

SKU: STGF14N60D-9
Manufacturer

STMicroelectronics

Max Power Dissipation

33W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

390V, 7A, 10 Ω, 15V

Packaging

Tube

Series

PowerMESH™

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

175°C

Min Operating Temperature

-40°C

Mount

Through Hole

Element Configuration

Single

Base Part Number

STGF14

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

11A

Reverse Recovery Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 7A

Current - Collector Pulsed (Icm)

50A

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

STMicroelectronics STGF14NC60KD

In stock

SKU: STGF14NC60KD-9
Manufacturer

STMicroelectronics

Element Configuration

Single

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Weight

2.299997g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 7A, 10 Ω, 15V

Turn Off Delay Time

116 ns

Operating Temperature

-55°C~150°C TJ

Series

PowerMESH™

JESD-609 Code

e3

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

ULTRA FAST

Voltage - Rated DC

600V

Max Power Dissipation

28W

Current Rating

11A

Base Part Number

STGF14

Pin Count

3

Mount

Through Hole

Factory Lead Time

8 Weeks

Turn Off Time-Nom (toff)

340 ns

Gate Charge

34.4nC

Turn On Delay Time

22.5 ns

Transistor Application

POWER CONTROL

Rise Time

8.5ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

11A

Reverse Recovery Time

37 ns

JEDEC-95 Code

TO-220AB

Turn On Time

31.5 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 7A

Continuous Collector Current

7A

Case Connection

ISOLATED

Power Dissipation

28W

Current - Collector Pulsed (Icm)

50A

Td (on/off) @ 25°C

22.5ns/116ns

Switching Energy

82μJ (on), 155μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

7V

Height

9.3mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

STMicroelectronics STGF15M65DF2

In stock

SKU: STGF15M65DF2-9
Manufacturer

STMicroelectronics

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 15A, 12 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

31W

Factory Lead Time

30 Weeks

Base Part Number

STGF15

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Type

Standard

Power - Max

31W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

30A

Reverse Recovery Time

142 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 15A

IGBT Type

Trench Field Stop

Gate Charge

45nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

24ns/93ns

Switching Energy

90μJ (on), 450μJ (off)

RoHS Status

ROHS3 Compliant

STMicroelectronics STGF19NC60KD

In stock

SKU: STGF19NC60KD-9
Manufacturer

STMicroelectronics

Operating Temperature

-55°C~150°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Pin Count

3

Factory Lead Time

8 Weeks

Packaging

Tube

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

32W

Base Part Number

STGF19

Test Conditions

480V, 12A, 10 Ω, 15V

Element Configuration

Single

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 12A

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

16A

Reverse Recovery Time

31 ns

JEDEC-95 Code

TO-220AB

Power Dissipation

32W

Case Connection

ISOLATED

Turn Off Time-Nom (toff)

270 ns

Gate Charge

55nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

30ns/105ns

Switching Energy

165μJ (on), 255μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

STMicroelectronics STGF19NC60WD

In stock

SKU: STGF19NC60WD-9
Manufacturer

STMicroelectronics

Series

PowerMESH™

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 12A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

HTS Code

8541.29.00.95

Max Power Dissipation

32W

Base Part Number

STGF19

Pin Count

3

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

25 ns

Input Type

Standard

Rise Time

7ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

14A

Reverse Recovery Time

32 ns

JEDEC-95 Code

TO-220AB

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Turn Off Time-Nom (toff)

127 ns

Power Dissipation

32W

Gate Charge

53nC

Td (on/off) @ 25°C

25ns/90ns

Switching Energy

81μJ (on), 125μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

REACH SVHC

No SVHC

Transistor Application

MOTOR CONTROL

RoHS Status

ROHS3 Compliant

STMicroelectronics STGF20H60DF

In stock

SKU: STGF20H60DF-9
Manufacturer

STMicroelectronics

Element Configuration

Single

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

37W

Base Part Number

STGF20

Factory Lead Time

20 Weeks

Input Type

Standard

Power Dissipation

37W

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

90 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

IGBT Type

Trench Field Stop

Gate Charge

115nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

42.5ns/177ns

Switching Energy

209μJ (on), 261μJ (off)

Height

15.75mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

STMicroelectronics STGF20H65DFB2

In stock

SKU: STGF20H65DFB2-9
Manufacturer

STMicroelectronics

Maximum Operating Temperature

+ 175 C

Supplier Device Package

TO-220FP

Base Product Number

STGF20

Brand

STMicroelectronics

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

40 A

Factory Pack QuantityFactory Pack Quantity

1000

Maximum Collector Emitter Voltage

650 V

Unit Weight

0.059613 oz

Maximum Gate Emitter Voltage

±20V

Mfr

STMicroelectronics

Minimum Operating Temperature

– 55 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-220FP

Pd - Power Dissipation

45 W

Product Status

Active

Test Conditions

400V, 20A, 10Ohm, 15V

Package / Case

TO-220-3 Full Pack

Mounting Type

Through Hole

Product Type

IGBT Transistors

Packaging

Tube

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

45

Input Type

Standard

Power - Max

45 W

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 20A

Operating Temperature

-55°C ~ 175°C (TJ)

Continuous Collector Current

40

IGBT Type

Trench Field Stop

Gate Charge

56 nC

Current - Collector Pulsed (Icm)

60 A

Td (on/off) @ 25°C

16ns/78.8ns

Switching Energy

265μJ (on), 214μJ (off)

Reverse Recovery Time (trr)

215 ns

Series

HB2

Product Category

IGBT Transistors