Showing 3481–3492 of 3680 results
Transistors - IGBTs - Single
STMicroelectronics STGP10H60DF
In stock
Manufacturer |
STMicroelectronics |
---|---|
Test Conditions |
400V, 10A, 10 Ω, 15V |
Base Part Number |
STGP10 |
Max Power Dissipation |
115W |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Packaging |
Tube |
Element Configuration |
Single |
Operating Temperature |
-55°C~175°C TJ |
Collector-Emitter Breakdown Voltage |
600V |
Weight |
6.000006g |
Number of Pins |
3 |
Package / Case |
TO-220-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Power - Max |
115W |
Td (on/off) @ 25°C |
19.5ns/103ns |
RoHS Status |
ROHS3 Compliant |
Radiation Hardening |
No |
Width |
4.6mm |
Length |
10.4mm |
Height |
15.75mm |
Switching Energy |
83μJ (on), 140μJ (off) |
Current - Collector Pulsed (Icm) |
40A |
Input Type |
Standard |
Gate Charge |
57nC |
IGBT Type |
Trench Field Stop |
Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 10A |
Reverse Recovery Time |
107 ns |
Max Collector Current |
20A |
Collector Emitter Voltage (VCEO) |
600V |
Lead Free |
Lead Free |
STMicroelectronics STGP10M65DF2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
30 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 10A, 22 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
115W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGP10 |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
115W |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
20A |
Reverse Recovery Time |
96 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 10A |
IGBT Type |
Trench Field Stop |
Gate Charge |
28nC |
Current - Collector Pulsed (Icm) |
40A |
Td (on/off) @ 25°C |
19ns/91ns |
Switching Energy |
120μJ (on), 270μJ (off) |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGP10NB60S
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 1k Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) – annealed |
Voltage - Rated DC |
600V |
Max Power Dissipation |
80W |
Current Rating |
10A |
Base Part Number |
STGP10 |
Pin Count |
3 |
Packaging |
Tube |
Power Dissipation |
80W |
Turn Off Time-Nom (toff) |
3100 ns |
Gate Charge |
33nC |
Transistor Application |
POWER CONTROL |
Drain to Source Voltage (Vdss) |
600V |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
29A |
Continuous Drain Current (ID) |
10A |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
1160 ns |
Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 10A |
Continuous Collector Current |
10A |
Input Type |
Standard |
Turn On Delay Time |
7 μs |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
700ns/1.2μs |
Switching Energy |
600μJ (on), 5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Height |
9.15mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGP10NB60SD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Power Dissipation |
3.5W |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 1k Ω, 15V |
Turn Off Delay Time |
1.2 μs |
Operating Temperature |
-55°C~150°C TJ |
Series |
PowerMESH™ |
JESD-609 Code |
e3 |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
80W |
Current Rating |
20A |
Base Part Number |
STGP10 |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Element Configuration |
Single |
Contact Plating |
Tin |
Factory Lead Time |
8 Weeks |
Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 10A |
Turn Off Time-Nom (toff) |
3100 ns |
Power - Max |
80W |
Transistor Application |
POWER CONTROL |
Rise Time |
460ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
29A |
Reverse Recovery Time |
37 ns |
Continuous Drain Current (ID) |
10A |
JEDEC-95 Code |
TO-220AB |
Drain to Source Breakdown Voltage |
600V |
Turn On Time |
1160 ns |
Input Type |
Standard |
Case Connection |
COLLECTOR |
Gate Charge |
33nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
700ns/1.2μs |
Switching Energy |
600μJ (on), 5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Height |
9.15mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
700 ns |
Lead Free |
Lead Free |
STMicroelectronics STGP10NB60SFP
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Package / Case |
TO-220-3 Full Pack |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 1k Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
25W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Max Collector Current |
23A |
Pin Count |
3 |
Element Configuration |
Single |
Case Connection |
ISOLATED |
Input Type |
Standard |
Power - Max |
25W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
1160 ns |
Base Part Number |
STGP10 |
Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 10A |
Gate Charge |
33nC |
Current - Collector Pulsed (Icm) |
80A |
Td (on/off) @ 25°C |
700ns/1.2μs |
Switching Energy |
600μJ (on), 5mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
Qualification Status |
Not Qualified |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGP10NC60HD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
350.003213mg |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 5A, 10 Ω, 15V |
Turn Off Delay Time |
72 ns |
Pin Count |
3 |
Factory Lead Time |
8 Weeks |
Series |
PowerMESH™ |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
65W |
Current Rating |
20A |
Base Part Number |
STGP10 |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Continuous Collector Current |
7A |
Turn Off Time-Nom (toff) |
247 ns |
Turn On Delay Time |
14.2 ns |
Transistor Application |
MOTOR CONTROL |
Rise Time |
5ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
20A |
Reverse Recovery Time |
22 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
19 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
Power Dissipation |
56W |
Input Type |
Standard |
Gate Charge |
19.2nC |
Current - Collector Pulsed (Icm) |
30A |
Td (on/off) @ 25°C |
14.2ns/72ns |
Switching Energy |
31.8μJ (on), 95μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
9.15mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGP10NC60K
In stock
Manufacturer |
STMicroelectronics |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 5A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Pbfree Code |
yes |
Part Status |
Obsolete |
Series |
PowerMESH™ |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
ULTRA FAST |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Current Rating |
20A |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Turn On Time |
23 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
20A |
JEDEC-95 Code |
TO-220AB |
Pin Count |
3 |
Base Part Number |
STGP10 |
Turn Off Time-Nom (toff) |
242 ns |
Gate Charge |
19nC |
Current - Collector Pulsed (Icm) |
30A |
Td (on/off) @ 25°C |
17ns/72ns |
Switching Energy |
55μJ (on), 85μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
RoHS Status |
ROHS3 Compliant |
JESD-30 Code |
R-PSFM-T3 |
Lead Free |
Lead Free |
STMicroelectronics STGP10NC60KD
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 5A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
65W |
Current Rating |
20A |
Base Part Number |
STGP10 |
Pin Count |
3 |
Series |
PowerMESH™ |
Power Dissipation |
25W |
Gate Charge |
19nC |
Current - Collector Pulsed (Icm) |
30A |
Transistor Application |
POWER CONTROL |
Rise Time |
6ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
20A |
Reverse Recovery Time |
22 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
23 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 5A |
Turn Off Time-Nom (toff) |
242 ns |
Case Connection |
ISOLATED |
Input Type |
Standard |
Td (on/off) @ 25°C |
17ns/72ns |
Switching Energy |
55μJ (on), 85μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
7V |
Height |
9.15mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGP10NC60S
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 5A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Base Part Number |
STGP10 |
Mount |
Through Hole |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Max Power Dissipation |
62.5W |
Packaging |
Tube |
Pin Count |
3 |
Turn On Time |
22.5 ns |
Vce(on) (Max) @ Vge, Ic |
1.65V @ 15V, 5A |
Input Type |
Standard |
Power - Max |
62.5W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
21A |
JEDEC-95 Code |
TO-220AB |
JESD-30 Code |
R-PSFM-T3 |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
560 ns |
Gate Charge |
18nC |
Current - Collector Pulsed (Icm) |
25A |
Td (on/off) @ 25°C |
19ns/160ns |
Switching Energy |
60μJ (on), 340μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGP12NB60HD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Pin Count |
3 |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 12A, 10 Ω, 15V |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Series |
PowerMESH™ |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
125W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Current Rating |
18A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGP12 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
51 ns |
Input Type |
Standard |
Power - Max |
125W |
Transistor Application |
MOTOR CONTROL |
Drain to Source Voltage (Vdss) |
600V |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.8V |
Max Collector Current |
30A |
Reverse Recovery Time |
80 ns |
Continuous Drain Current (ID) |
18A |
Element Configuration |
Single |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 12A |
Turn Off Time-Nom (toff) |
295 ns |
Gate Charge |
68nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
5ns/91ns |
Switching Energy |
210μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5V |
RoHS Status |
ROHS3 Compliant |
Power Dissipation |
100W |
Lead Free |
Lead Free |
STMicroelectronics STGP12NB60KD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Pin Count |
3 |
Package / Case |
TO-220-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 12A, 10 Ω, 15V |
Operating Temperature |
150°C TJ |
Packaging |
Tube |
Series |
PowerMESH™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
JESD-609 Code |
e3 |
Number of Terminations |
3 |
Terminal Finish |
Matte Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
125W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
not_compliant |
Current Rating |
18A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGP12 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
39.5 ns |
Power Dissipation |
125W |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Drain to Source Voltage (Vdss) |
600V |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
30A |
Reverse Recovery Time |
80ns |
Continuous Drain Current (ID) |
18A |
Qualification Status |
Not Qualified |
JESD-30 Code |
R-PSFM-T3 |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 12A |
Turn Off Time-Nom (toff) |
461 ns |
Gate Charge |
54nC |
Current - Collector Pulsed (Icm) |
60A |
Td (on/off) @ 25°C |
25ns/96ns |
Switching Energy |
258μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
7V |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
STMicroelectronics STGP14NC60KD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 7A, 10 Ω, 15V |
Turn Off Delay Time |
116 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
ULTRA FAST |
Voltage - Rated DC |
600V |
Max Power Dissipation |
80W |
Current Rating |
25A |
Base Part Number |
STGP14 |
Pin Count |
3 |
Contact Plating |
Tin |
Factory Lead Time |
8 Weeks |
Turn Off Time-Nom (toff) |
340 ns |
Case Connection |
COLLECTOR |
Turn On Delay Time |
22.5 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
8.5ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
25A |
Reverse Recovery Time |
37 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
31.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 7A |
Gate Charge |
34.4nC |
Current - Collector Pulsed (Icm) |
50A |
Power Dissipation |
28W |
Td (on/off) @ 25°C |
22.5ns/116ns |
Switching Energy |
82μJ (on), 155μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
7V |
Height |
9.15mm |
Length |
10.4mm |
Width |
4.6mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |