Showing 3493–3504 of 3680 results

Transistors - IGBTs - Single

STMicroelectronics STGP15H60DF

In stock

SKU: STGP15H60DF-9
Manufacturer

STMicroelectronics

Test Conditions

400V, 15A, 10 Ω, 15V

Base Part Number

STGP15

Max Power Dissipation

115W

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Packaging

Tube

Element Configuration

Single

Operating Temperature

-55°C~175°C TJ

Collector-Emitter Breakdown Voltage

600V

Weight

6.000006g

Number of Pins

3

Package / Case

TO-220-3

Mounting Type

Through Hole

Mount

Through Hole

Factory Lead Time

20 Weeks

Power - Max

115W

Td (on/off) @ 25°C

24.5ns/118ns

RoHS Status

ROHS3 Compliant

Radiation Hardening

No

Width

4.6mm

Length

10.4mm

Height

15.75mm

Switching Energy

136μJ (on), 207μJ (off)

Current - Collector Pulsed (Icm)

60A

Input Type

Standard

Gate Charge

81nC

IGBT Type

Trench Field Stop

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 15A

Reverse Recovery Time

103 ns

Max Collector Current

30A

Collector Emitter Voltage (VCEO)

600V

Lead Free

Lead Free

STMicroelectronics STGP15M120F3

In stock

SKU: STGP15M120F3-9
Manufacturer

STMicroelectronics

Reach Compliance Code

compliant

Mounting Type

Through Hole

Package / Case

TO-220-3

Current-Collector (Ic) (Max)

30A

Test Conditions

600V, 15A, 22 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Part Status

Active

Factory Lead Time

30 Weeks

Power - Max

259W

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

1200V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 15A

IGBT Type

Trench Field Stop

Gate Charge

53nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

26ns/122ns

Switching Energy

550μJ (on), 850μJ (off)

STMicroelectronics STGP15M65DF2

In stock

SKU: STGP15M65DF2-9
Manufacturer

STMicroelectronics

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 15A, 12 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

136W

Factory Lead Time

30 Weeks

Base Part Number

STGP15

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Input Type

Standard

Power - Max

136W

Collector Emitter Voltage (VCEO)

2V

Max Collector Current

30A

Reverse Recovery Time

142 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 15A

IGBT Type

Trench Field Stop

Gate Charge

45nC

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

24ns/93ns

Switching Energy

90μJ (on), 450μJ (off)

RoHS Status

ROHS3 Compliant

STMicroelectronics STGP18N40LZ

In stock

SKU: STGP18N40LZ-9
Manufacturer

STMicroelectronics

Series

PowerMESH™

Package / Case

TO-220-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

420V

Number of Elements

1

Test Conditions

300V, 10A, 5V

Turn Off Delay Time

14.2 μs

Operating Temperature

-55°C~175°C TJ

JESD-30 Code

R-PSFM-T3

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

VOLTAGE CLAMPING

Max Power Dissipation

150W

Base Part Number

STGP18

Pin Count

3

Mounting Type

Through Hole

Mount

Through Hole

Turn On Time

4450 ns

Case Connection

COLLECTOR

Turn On Delay Time

650 ns

Power - Max

150W

Transistor Application

AUTOMOTIVE IGNITION

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

360V

Max Collector Current

30A

JEDEC-95 Code

TO-220AB

Vce(on) (Max) @ Vge, Ic

1.7V @ 4.5V, 10A

Turn Off Time-Nom (toff)

22200 ns

Element Configuration

Single

Gate Charge

29nC

Current - Collector Pulsed (Icm)

40A

Td (on/off) @ 25°C

650ns/13.5μs

Gate-Emitter Voltage-Max

16V

Gate-Emitter Thr Voltage-Max

2.3V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Input Type

Logic

Lead Free

Lead Free

STMicroelectronics STGP19NC60H

In stock

SKU: STGP19NC60H-9
Manufacturer

STMicroelectronics

Series

PowerMESH™

Package / Case

TO-220-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 12A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

Packaging

Tube

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

130W

Base Part Number

STGP19

Pin Count

3

Mounting Type

Through Hole

Mount

Through Hole

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Power Dissipation

130W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

JEDEC-95 Code

TO-220AB

Turn On Time

32 ns

Turn Off Time-Nom (toff)

272 ns

Gate Charge

53nC

Element Configuration

Single

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

25ns/97ns

Switching Energy

85μJ (on), 189μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

Input Type

Standard

RoHS Status

ROHS3 Compliant

STMicroelectronics STGP19NC60HD

In stock

SKU: STGP19NC60HD-9
Manufacturer

STMicroelectronics

Input Type

Standard

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 12A, 10 Ω, 15V

Turn Off Delay Time

97 ns

Packaging

Tube

Series

PowerMESH™

Operating Temperature

-55°C~150°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

130W

Base Part Number

STGP19

Pin Count

3

Element Configuration

Single

Power Dissipation

130W

Mount

Through Hole

Factory Lead Time

8 Weeks

Current - Collector Pulsed (Icm)

60A

Td (on/off) @ 25°C

25ns/97ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

31ns

JEDEC-95 Code

TO-220AB

Turn On Time

32 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Turn Off Time-Nom (toff)

272 ns

Gate Charge

53nC

Transistor Application

POWER CONTROL

Turn On Delay Time

25 ns

Switching Energy

85μJ (on), 189μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Height

15.75mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Rise Time

7ns

Lead Free

Lead Free

STMicroelectronics STGP19NC60KD

In stock

SKU: STGP19NC60KD-9
Manufacturer

STMicroelectronics

Element Configuration

Single

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Turn Off Delay Time

105 ns

Series

PowerMESH™

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

125W

Base Part Number

STGP19

Pin Count

3

JESD-30 Code

R-PSFM-T3

Contact Plating

Tin

Factory Lead Time

8 Weeks

Gate Charge

55nC

Current - Collector Pulsed (Icm)

75A

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

35A

Reverse Recovery Time

31 ns

JEDEC-95 Code

TO-220AB

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

2.75V @ 15V, 12A

Turn Off Time-Nom (toff)

270 ns

Turn On Delay Time

30 ns

Input Type

Standard

Td (on/off) @ 25°C

30ns/105ns

Switching Energy

165μJ (on), 255μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Height

9.15mm

Length

10.4mm

Width

4.6mm

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Power - Max

125W

Lead Free

Lead Free

STMicroelectronics STGP19NC60S

In stock

SKU: STGP19NC60S-9
Manufacturer

STMicroelectronics

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Mounting Type

Through Hole

Package / Case

TO-220-3

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Packaging

Tube

Series

PowerMESH™

Pin Count

3

Mount

Through Hole

Number of Terminations

3

ECCN Code

EAR99

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Additional Feature

FREE WHEELING DIODE

Max Power Dissipation

130W

Base Part Number

STGP19

Part Status

Obsolete

JESD-30 Code

R-PSFM-T3

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 12A

Turn Off Time-Nom (toff)

535 ns

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

JEDEC-95 Code

TO-220AB

Turn On Time

23.5 ns

Element Configuration

Single

Case Connection

COLLECTOR

Gate Charge

54.5nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

17.5ns/175ns

Switching Energy

135μJ (on), 815μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

STMicroelectronics STGP19NC60SD

In stock

SKU: STGP19NC60SD-9
Manufacturer

STMicroelectronics

Element Configuration

Single

Mounting Type

Through Hole

Package / Case

TO-220-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 12A, 10 Ω, 15V

Turn Off Delay Time

175 ns

Packaging

Tube

Series

PowerMESH™

Operating Temperature

-55°C~150°C TJ

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

130W

Base Part Number

STGP19

Pin Count

3

JESD-30 Code

R-PSFM-T3

Mount

Through Hole

Factory Lead Time

8 Weeks

Vce(on) (Max) @ Vge, Ic

1.9V @ 15V, 12A

Turn Off Time-Nom (toff)

535 ns

Power - Max

130W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

31 ns

JEDEC-95 Code

TO-220AB

Turn On Time

23.5 ns

Input Type

Standard

Case Connection

COLLECTOR

Gate Charge

54.5nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

17.5ns/175ns

Switching Energy

135μJ (on), 815μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Turn On Delay Time

17.5 ns

Lead Free

Lead Free

STMicroelectronics STGP19NC60W

In stock

SKU: STGP19NC60W-9
Manufacturer

STMicroelectronics

Series

PowerMESH™

Package / Case

TO-220-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 12A, 10 Ω, 15V

Operating Temperature

-65°C~150°C TJ

Pin Count

3

Packaging

Tube

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

130W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Base Part Number

STGP19

Mounting Type

Through Hole

Mount

Through Hole

JEDEC-95 Code

TO-220AB

Qualification Status

Not Qualified

Input Type

Standard

Power - Max

130W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Turn On Time

33 ns

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

JESD-30 Code

R-PSFM-T3

Turn Off Time-Nom (toff)

204 ns

Gate Charge

53nC

Td (on/off) @ 25°C

25ns/90ns

Switching Energy

81μJ (on), 125μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Element Configuration

Single

RoHS Status

ROHS3 Compliant

STMicroelectronics STGP19NC60WD

In stock

SKU: STGP19NC60WD-9
Manufacturer

STMicroelectronics

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

390V, 12A, 10 Ω, 15V

Turn Off Delay Time

90 ns

Pin Count

3

Operating Temperature

-55°C~150°C TJ

Series

PowerMESH™

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Max Power Dissipation

125W

Base Part Number

STGP19

Mount

Through Hole

Contact Plating

Tin

Turn On Time

33 ns

Power Dissipation

125W

Turn On Delay Time

25 ns

Transistor Application

POWER CONTROL

Rise Time

7ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

31ns

JEDEC-95 Code

TO-220AB

Vce(on) (Max) @ Vge, Ic

2.5V @ 15V, 12A

Turn Off Time-Nom (toff)

204 ns

Element Configuration

Single

Gate Charge

53nC

Td (on/off) @ 25°C

25ns/90ns

Switching Energy

81μJ (on), 125μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

5.75V

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Input Type

Standard

Lead Free

Lead Free

STMicroelectronics STGP20H60DF

In stock

SKU: STGP20H60DF-9
Manufacturer

STMicroelectronics

Factory Lead Time

20 Weeks

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 20A, 10 Ω, 15V

Operating Temperature

-55°C~175°C TJ

Packaging

Tube

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

ECCN Code

EAR99

Max Power Dissipation

167W

Base Part Number

STGP20

Element Configuration

Single

Power Dissipation

167W

Input Type

Standard

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

40A

Reverse Recovery Time

90 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 20A

IGBT Type

Trench Field Stop

Gate Charge

115nC

Current - Collector Pulsed (Icm)

80A

Td (on/off) @ 25°C

42.5ns/177ns

Switching Energy

209μJ (on), 261μJ (off)

Gate-Emitter Voltage-Max

20V

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free