Showing 3553–3564 of 3680 results
Transistors - IGBTs - Single
STMicroelectronics STGW30H65FB
In stock
Manufacturer |
STMicroelectronics |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
38.000013g |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
260W |
Factory Lead Time |
20 Weeks |
Base Part Number |
STGW30 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
260W |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
30A |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
IGBT Type |
Trench Field Stop |
Gate Charge |
149nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
37ns/146ns |
Switching Energy |
151μJ (on), 293μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW30M65DF2
In stock
Manufacturer |
STMicroelectronics |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
258W |
Factory Lead Time |
30 Weeks |
Base Part Number |
STGW30 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Input Type |
Standard |
Power - Max |
258W |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
60A |
Reverse Recovery Time |
140 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
IGBT Type |
Trench Field Stop |
Gate Charge |
80nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
31.6ns/115ns |
Switching Energy |
300μJ (on), 960μJ (off) |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW30N120KD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 20A, 10 Ω, 15V |
Operating Temperature |
-55°C~125°C TJ |
Element Configuration |
Single |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
220W |
Base Part Number |
STGW30 |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Packaging |
Tube |
Input Type |
Standard |
Vce(on) (Max) @ Vge, Ic |
3.85V @ 15V, 20A |
Turn Off Time-Nom (toff) |
756 ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
60A |
Reverse Recovery Time |
84 ns |
JEDEC-95 Code |
TO-247AC |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
57 ns |
Power - Max |
220W |
Transistor Application |
MOTOR CONTROL |
Gate Charge |
105nC |
Current - Collector Pulsed (Icm) |
100A |
Td (on/off) @ 25°C |
36ns/251ns |
Switching Energy |
2.4mJ (on), 4.3mJ (off) |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW30N90D
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
900V |
Number of Elements |
1 |
Test Conditions |
900V, 20A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Pin Count |
3 |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
220W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGW30 |
Packaging |
Tube |
JESD-30 Code |
R-PSFM-T3 |
Turn On Time |
41 ns |
Vce(on) (Max) @ Vge, Ic |
2.75V @ 15V, 20A |
Input Type |
Standard |
Power - Max |
220W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
900V |
Max Collector Current |
60A |
Reverse Recovery Time |
152 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
928 ns |
Gate Charge |
110nC |
Current - Collector Pulsed (Icm) |
135A |
Td (on/off) @ 25°C |
29ns/275ns |
Switching Energy |
1.66mJ (on), 4.44mJ (off) |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
5.75V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW30NC60KD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 20A, 10 Ω, 15V |
Pin Count |
3 |
Factory Lead Time |
8 Weeks |
Packaging |
Tube |
Series |
PowerMESH™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
ULTRA FAST |
Max Power Dissipation |
200W |
Base Part Number |
STGW30 |
Turn Off Delay Time |
120 ns |
Element Configuration |
Single |
Gate Charge |
96nC |
Current - Collector Pulsed (Icm) |
125A |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
40 ns |
Turn On Time |
41 ns |
Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 20A |
Turn Off Time-Nom (toff) |
290 ns |
Input Type |
Standard |
Turn On Delay Time |
29 ns |
Td (on/off) @ 25°C |
29ns/120ns |
Switching Energy |
350μJ (on), 435μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW30NC60VD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 3.3 Ω, 15V |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
Series |
PowerMESH™ |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
250W |
Base Part Number |
STGW30 |
Pin Count |
3 |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
250W |
Gate Charge |
100nC |
Current - Collector Pulsed (Icm) |
150A |
Rise Time |
11ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
44ns |
Turn On Time |
42.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Turn Off Time-Nom (toff) |
280 ns |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Td (on/off) @ 25°C |
31ns/100ns |
Switching Energy |
220μJ (on), 330μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
21.07mm |
Length |
16.02mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW30NC60W
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
118 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Element Configuration |
Single |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Base Part Number |
STGW30 |
Pin Count |
3 |
JESD-30 Code |
R-PSFM-T3 |
Series |
PowerMESH™ |
Power Dissipation |
200W |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Drain to Source Resistance |
2.5Ohm |
Transistor Application |
MOTOR CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Continuous Drain Current (ID) |
30A |
JEDEC-95 Code |
TO-247AC |
Gate to Source Voltage (Vgs) |
20V |
Drain to Source Breakdown Voltage |
600V |
Turn On Time |
42.5 ns |
Input Type |
Standard |
Turn On Delay Time |
29.5 ns |
Turn Off Time-Nom (toff) |
189 ns |
Gate Charge |
102nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
29.5ns/118ns |
Switching Energy |
305μJ (on), 181μJ (off) |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW30NC60WD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 20A, 10 Ω, 15V |
Turn Off Delay Time |
118 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Factory Lead Time |
8 Weeks |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
200W |
Current Rating |
60A |
Base Part Number |
STGW30 |
Pin Count |
3 |
Packaging |
Tube |
Power Dissipation |
200W |
Turn Off Time-Nom (toff) |
189 ns |
Gate Charge |
102nC |
Turn On Delay Time |
29.5 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
12ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
40 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
42.5 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Case Connection |
ISOLATED |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
29.5ns/118ns |
Switching Energy |
305μJ (on), 181μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW30V60DF
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
-55°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Element Configuration |
Single |
Factory Lead Time |
20 Weeks |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
258W |
Base Part Number |
STGW30 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Power Dissipation |
258W |
IGBT Type |
Trench Field Stop |
Gate Charge |
163nC |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Reverse Recovery Time |
53 ns |
Turn On Time |
59 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
Turn Off Time-Nom (toff) |
225 ns |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
45ns/189ns |
Switching Energy |
383μJ (on), 233μJ (off) |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW30V60F
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
20 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
260W |
Base Part Number |
STGW30 |
Element Configuration |
Single |
Power Dissipation |
260W |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 30A |
IGBT Type |
Trench Field Stop |
Gate Charge |
163nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
45ns/189ns |
Switching Energy |
383μJ (on), 233μJ (off) |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW33IH120D
In stock
Manufacturer |
STMicroelectronics |
---|---|
Series |
PowerMESH™ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
960V, 20A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
220W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Base Part Number |
STGW33 |
Pin Count |
3 |
Packaging |
Tube |
Qualification Status |
Not Qualified |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
57 ns |
Input Type |
Standard |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.8V |
Max Collector Current |
60A |
Reverse Recovery Time |
85 ns |
JEDEC-95 Code |
TO-247AC |
Element Configuration |
Single |
Power Dissipation |
220W |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 20A |
Turn Off Time-Nom (toff) |
740 ns |
Gate Charge |
127nC |
Current - Collector Pulsed (Icm) |
45A |
Td (on/off) @ 25°C |
46ns/284ns |
Switching Energy |
1.5mJ (on), 3.4mJ (off) |
Gate-Emitter Voltage-Max |
25V |
Gate-Emitter Thr Voltage-Max |
5.75V |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW35HF60W
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STGW35 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 20A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Turn Off Delay Time |
175 ns |
JESD-609 Code |
e3 |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
200W |
Mount |
Through Hole |
Factory Lead Time |
8 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 20A |
Turn Off Time-Nom (toff) |
295 ns |
Input Type |
Standard |
Turn On Delay Time |
30 ns |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Turn On Time |
45 ns |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
3 |
Gate Charge |
140nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
30ns/175ns |
Switching Energy |
290μJ (on), 185μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |