Showing 3577–3588 of 3680 results
Transistors - IGBTs - Single
STMicroelectronics STGW40NC60WD
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 30A, 10 Ω, 15V |
Turn Off Delay Time |
168 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Power Dissipation |
250W |
Mount |
Through Hole |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
250W |
Current Rating |
40A |
Base Part Number |
STGW40 |
Pin Count |
3 |
Element Configuration |
Single |
Series |
PowerMESH™ |
Input Type |
Standard |
Continuous Collector Current |
40A |
Turn Off Time-Nom (toff) |
280 ns |
Rise Time |
12ns |
Drain to Source Voltage (Vdss) |
650V |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
Reverse Recovery Time |
45 ns |
Continuous Drain Current (ID) |
40A |
JEDEC-95 Code |
TO-247AC |
Input Capacitance |
2.9nF |
Turn On Time |
46 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
Turn On Delay Time |
33 ns |
Transistor Application |
POWER CONTROL |
Gate Charge |
126nC |
Current - Collector Pulsed (Icm) |
230A |
Td (on/off) @ 25°C |
33ns/168ns |
Switching Energy |
302μJ (on), 349μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW40V60DF
In stock
Manufacturer |
STMicroelectronics |
---|---|
Factory Lead Time |
20 Weeks |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Operating Temperature |
-55°C~175°C TJ |
Packaging |
Tube |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
ECCN Code |
EAR99 |
Max Power Dissipation |
283W |
Base Part Number |
STGW40 |
Element Configuration |
Single |
Power Dissipation |
283W |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
41ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
226nC |
Current - Collector Pulsed (Icm) |
160A |
Td (on/off) @ 25°C |
52ns/208ns |
Switching Energy |
456μJ (on), 411μJ (off) |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW40V60F
In stock
Manufacturer |
STMicroelectronics |
---|---|
Turn Off Delay Time |
208 ns |
Base Part Number |
STGW40 |
Max Power Dissipation |
283W |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Packaging |
Tube |
Element Configuration |
Single |
Operating Temperature |
-55°C~175°C TJ |
Test Conditions |
400V, 40A, 10 Ω, 15V |
Collector-Emitter Breakdown Voltage |
600V |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Input Type |
Standard |
Td (on/off) @ 25°C |
52ns/208ns |
RoHS Status |
ROHS3 Compliant |
Radiation Hardening |
No |
Width |
5.15mm |
Length |
15.75mm |
Height |
20.15mm |
Switching Energy |
456μJ (on), 411μJ (off) |
Current - Collector Pulsed (Icm) |
160A |
Power Dissipation |
283W |
Gate Charge |
226nC |
IGBT Type |
Trench Field Stop |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
Max Collector Current |
80A |
Collector Emitter Voltage (VCEO) |
600V |
Turn On Delay Time |
52 ns |
Lead Free |
Lead Free |
STMicroelectronics STGW45HF60WD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 6.8 Ω, 15V |
Element Configuration |
Single |
Mount |
Through Hole |
Packaging |
Tube |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Max Power Dissipation |
250W |
Base Part Number |
STGW45 |
Pin Count |
3 |
Turn Off Delay Time |
145 ns |
Input Type |
Standard |
Gate Charge |
160nC |
Current - Collector Pulsed (Icm) |
150A |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
Reverse Recovery Time |
55 ns |
Turn On Time |
44 ns |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
Turn Off Time-Nom (toff) |
250 ns |
Turn On Delay Time |
30 ns |
Power - Max |
250W |
Td (on/off) @ 25°C |
30ns/145ns |
Switching Energy |
300μJ (on), 330μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
24.45mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW45HF60WDI
In stock
Manufacturer |
STMicroelectronics |
---|---|
Base Part Number |
STGW45 |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 4.7 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Turn Off Delay Time |
145 ns |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
250W |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Vce(on) (Max) @ Vge, Ic |
2.5V @ 15V, 30A |
Gate Charge |
160nC |
Input Type |
Standard |
Power - Max |
250W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
70A |
Reverse Recovery Time |
90 ns |
JESD-30 Code |
R-PSFM-T3 |
Pin Count |
3 |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
-/145ns |
Switching Energy |
330μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
STMicroelectronics STGW45NC60VD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 30A, 10 Ω, 15V |
Turn Off Delay Time |
178 ns |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Series |
PowerMESH™ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
270W |
Base Part Number |
STGW45 |
Pin Count |
3 |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 30A |
Turn Off Time-Nom (toff) |
366 ns |
Turn On Delay Time |
33 ns |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
90A |
Reverse Recovery Time |
45ns |
Turn On Time |
46 ns |
Power Dissipation |
270W |
Input Type |
Standard |
Gate Charge |
126nC |
Current - Collector Pulsed (Icm) |
220A |
Td (on/off) @ 25°C |
33ns/178ns |
Switching Energy |
333μJ (on), 537μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW45NC60WD
In stock
Manufacturer |
STMicroelectronics |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 30A, 10 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
JESD-30 Code |
R-PSFM-T3 |
Mount |
Through Hole |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
285W |
Base Part Number |
STGW45 |
Pin Count |
3 |
Series |
PowerMESH™ |
Element Configuration |
Single |
Gate Charge |
126nC |
Current - Collector Pulsed (Icm) |
230A |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
90A |
Reverse Recovery Time |
45 ns |
JEDEC-95 Code |
TO-247AC |
Turn On Time |
46 ns |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 30A |
Turn Off Time-Nom (toff) |
280 ns |
Input Type |
Standard |
Power - Max |
285W |
Td (on/off) @ 25°C |
33ns/168ns |
Switching Energy |
302μJ (on), 349μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
21.09mm |
Length |
16.03mm |
Width |
5.16mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW50H60DF
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 10 Ω, 15V |
Turn Off Delay Time |
205 ns |
Pin Count |
3 |
Mount |
Through Hole |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
360W |
Base Part Number |
STGW50 |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 50A |
Turn Off Time-Nom (toff) |
285 ns |
Turn On Delay Time |
62 ns |
Power - Max |
360W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
100A |
Reverse Recovery Time |
55 ns |
Turn On Time |
91 ns |
Element Configuration |
Single |
Input Type |
Standard |
IGBT Type |
Trench Field Stop |
Gate Charge |
217nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
62ns/178ns |
Switching Energy |
890μJ (on), 860μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW50HF60S
In stock
Manufacturer |
STMicroelectronics |
---|---|
Operating Temperature |
-55°C~150°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
6.500007g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Base Part Number |
STGW50 |
Mount |
Through Hole |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
284W |
Turn Off Delay Time |
250 ns |
JESD-30 Code |
R-PSFM-T3 |
Vce(on) (Max) @ Vge, Ic |
1.45V @ 15V, 30A |
Turn Off Time-Nom (toff) |
950 ns |
Turn On Delay Time |
50 ns |
Power - Max |
284W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
110A |
Turn On Time |
69 ns |
Element Configuration |
Single |
Input Type |
Standard |
Gate Charge |
200nC |
Current - Collector Pulsed (Icm) |
130A |
Td (on/off) @ 25°C |
50ns/220ns |
Switching Energy |
250μJ (on), 4.2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.7V |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
STMicroelectronics STGW50HF60SD
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Base Part Number |
STGW50 |
Mount |
Through Hole |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
284W |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
950 ns |
Gate Charge |
200nC |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
110A |
Reverse Recovery Time |
67 ns |
Turn On Time |
69 ns |
Vce(on) (Max) @ Vge, Ic |
1.45V @ 15V, 30A |
Power Dissipation |
284W |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
130A |
Td (on/off) @ 25°C |
50ns/220ns |
Switching Energy |
250μJ (on), 4.2mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.7V |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW50NC60W
In stock
Manufacturer |
STMicroelectronics |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Weight |
38.000013g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
390V, 40A, 10 Ω, 15V |
Pin Count |
3 |
Mount |
Through Hole |
Series |
PowerMESH™ |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
285W |
Base Part Number |
STGW50 |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Turn Off Time-Nom (toff) |
343 ns |
Gate Charge |
195nC |
Power - Max |
285W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
100A |
Turn On Time |
69 ns |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 40A |
Element Configuration |
Single |
Input Type |
Standard |
Td (on/off) @ 25°C |
52ns/240ns |
Switching Energy |
365μJ (on), 560μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
5.75V |
Height |
20.15mm |
Length |
15.75mm |
Width |
5.15mm |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGW60H60DLFB
In stock
Manufacturer |
STMicroelectronics |
---|---|
Test Conditions |
400V, 60A, 5 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Max Power Dissipation |
375W |
ECCN Code |
EAR99 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Operating Temperature |
-55°C~175°C TJ |
Collector-Emitter Breakdown Voltage |
600V |
Weight |
38.000013g |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
20 Weeks |
Element Configuration |
Single |
Current - Collector Pulsed (Icm) |
240A |
RoHS Status |
ROHS3 Compliant |
Width |
5.15mm |
Length |
15.75mm |
Height |
20.15mm |
Switching Energy |
626μJ (off) |
Td (on/off) @ 25°C |
-/160ns |
Gate Charge |
306nC |
Base Part Number |
STGW60 |
IGBT Type |
Trench Field Stop |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 60A |
Max Collector Current |
80A |
Collector Emitter Voltage (VCEO) |
600V |
Power - Max |
375W |
Input Type |
Standard |
Lead Free |
Lead Free |