Showing 3661–3672 of 3680 results
STMicroelectronics STGYA120M65DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Factory Lead Time |
30 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 Exposed Pad |
| Current-Collector (Ic) (Max) |
160A |
| Test Conditions |
400V, 120A, 4.7 Ω, 15V |
| Operating Temperature |
-55°C~175°C TJ |
| Packaging |
Tube |
| Series |
M |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
STGYA120 |
| Input Type |
Standard |
| Power - Max |
625W |
| Reverse Recovery Time |
202ns |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Vce(on) (Max) @ Vge, Ic |
1.95V @ 15V, 120A |
| IGBT Type |
NPT, Trench Field Stop |
| Gate Charge |
420nC |
| Current - Collector Pulsed (Icm) |
360A |
| Td (on/off) @ 25°C |
66ns/185ns |
| Switching Energy |
1.8mJ (on), 4.41mJ (off) |
| RoHS Status |
ROHS3 Compliant |
STMicroelectronics STGYA50H120DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 |
| Base Product Number |
STGYA50 |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Current-Collector (Ic) (Max) |
100 A |
| Maximum Collector Emitter Voltage |
1200 V |
| Maximum Gate Emitter Voltage |
±20V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
STMicroelectronics |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
Max247 long leads |
| Pd - Power Dissipation |
535 W |
| Product Status |
Active |
| Test Conditions |
600V, 50A, 10Ohm, 15V |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Technology |
Si |
| Configuration |
Series |
| Power Dissipation |
535W |
| Input Type |
Standard |
| Power - Max |
535 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 50A |
| Continuous Collector Current |
100A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
210 nC |
| Current - Collector Pulsed (Icm) |
200 A |
| Td (on/off) @ 25°C |
40ns/284ns |
| Switching Energy |
2mJ (on), 2.1mJ (off) |
| Reverse Recovery Time (trr) |
340 ns |
STMicroelectronics STGYA75H120DF2
In stock
| Manufacturer |
STMicroelectronics |
|---|---|
| Maximum Gate Emitter Voltage |
±20V |
| Supplier Device Package |
TO-247 |
| Base Product Number |
STGYA75 |
| Brand |
STMicroelectronics |
| Collector- Emitter Voltage VCEO Max |
1.2 kV |
| Continuous Collector Current Ic Max |
75 A |
| Current-Collector (Ic) (Max) |
150 A |
| Factory Pack QuantityFactory Pack Quantity |
30 |
| Test Conditions |
600V, 75A, 10Ohm, 15V |
| Maximum Collector Emitter Voltage |
1200 V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
STMicroelectronics |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
Max247 |
| Pd - Power Dissipation |
750 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Product Type |
IGBT Transistors |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
750 |
| Input Type |
Standard |
| Power - Max |
750 W |
| Voltage - Collector Emitter Breakdown (Max) |
1200 V |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 75A |
| Unit Weight |
0.156264 oz |
| Continuous Collector Current |
150 |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
313 nC |
| Current - Collector Pulsed (Icm) |
300 A |
| Td (on/off) @ 25°C |
61ns/366ns |
| Switching Energy |
4.3mJ (on), 3.9mJ (off) |
| Reverse Recovery Time (trr) |
356 ns |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
Toshiba GT40WR21,Q(O
In stock
| Manufacturer |
Toshiba |
|---|---|
| Package Width |
4.5 |
| Automotive |
No |
| Collector Current (DC) |
40(A) |
| ECCN (US) |
EAR99 |
| EU RoHS |
Compliant |
| Gate to Emitter Voltage (Max) |
±25(V) |
| Lead Shape |
Through Hole |
| Maximum Collector-Emitter Voltage (V) |
1800 |
| Maximum Gate Emitter Leakage Current (uA) |
0.1 |
| Maximum Gate Emitter Voltage (V) |
±25 |
| Maximum Continuous Collector Current (A) |
40 |
| Maximum Operating Temperature (°C) |
175 |
| Maximum Power Dissipation (mW) |
375 |
| Minimum Operating Temperature (°C) |
-55 |
| Mounting |
Through Hole |
| Operating Temperature Classification |
Military |
| Package Height |
19 |
| Package Length |
15.9(Max) |
| Package Type |
TO-3PN |
| Number of Pins |
3 |
| Surface Mount |
NO |
| Pin Count |
3 |
| Operating Temperature (Max) |
175C |
| Standard Package Name |
TO-3PN |
| Supplier Package |
TO-3PN |
| Tab |
Tab |
| Typical Collector Emitter Saturation Voltage (V) |
2.9 |
| Part Status |
Active |
| ECCN Code |
EAR99 |
| Subcategory |
Insulated Gate BIP Transistors |
| Reach Compliance Code |
unknown |
| PPAP |
No |
| PCB changed |
3 |
| Operating Temperature (Min) |
-55C |
| Configuration |
Single |
| Polarity/Channel Type |
N-CHANNEL |
| Channel Type |
N |
| Power Dissipation-Max (Abs) |
375 W |
| Collector Current-Max (IC) |
40 A |
| Collector-Emitter Voltage-Max |
1800 V |
| Gate-Emitter Voltage-Max |
25 V |
| Rad Hardened |
No |
| Fall Time-Max (tf) |
350 ns |
Toshiba Semiconductor and Storage GT10J312(Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
TO-220SM |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
10A |
| Test Conditions |
300V, 10A, 100Ohm, 15V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Part Status |
Obsolete |
| Mount |
Surface Mount |
| Base Part Number |
GT10 |
| Max Power Dissipation |
60W |
| Input Type |
Standard |
| Power - Max |
60W |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
10A |
| Reverse Recovery Time |
200 ns |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 10A |
| Current - Collector Pulsed (Icm) |
20A |
| Td (on/off) @ 25°C |
400ns/400ns |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Toshiba Semiconductor and Storage GT20J341,S4X(S
In stock
| Manufacturer |
Toshiba |
|---|---|
| Pin Count |
3 +Tab |
| Surface Mount |
NO |
| Supplier Device Package |
TO-220SIS |
| Mounting Style |
Through Hole |
| Brand |
Toshiba |
| Collector Current (DC) |
20(A) |
| Gate to Emitter Voltage (Max) |
±25(V) |
| Maximum Operating Temperature |
+ 150 C |
| Minimum Operating Temperature |
– 55 C |
| Operating Temperature Classification |
Military |
| Package |
Tube |
| Mounting |
Through Hole |
| Package Type |
TO-220SIS |
| Product Status |
Active |
| Rad Hardened |
No |
| Operating Temperature |
150°C (TJ) |
| Packaging |
Magazine |
| ECCN Code |
EAR99 |
| Subcategory |
IGBTs |
| Technology |
Si |
| Reach Compliance Code |
unknown |
| Package / Case |
TO-220-3 Full Pack |
| Mounting Type |
Through Hole |
| Power Dissipation-Max (Abs) |
45 W |
| Test Condition |
300V, 20A, 33Ohm, 15V |
| Power Dissipation |
45 |
| Input Type |
Standard |
| Power - Max |
45 W |
| Polarity/Channel Type |
N-CHANNEL |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
20 A |
| Collector Emitter Saturation Voltage |
1.5 |
| Channel Type |
N |
| Operating Temperature (Min) |
-55C |
| Operating Temperature (Max) |
150C |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 20A |
| Collector Current-Max (IC) |
20 A |
| Continuous Collector Current |
20 |
| Collector-Emitter Voltage-Max |
600 V |
| Current - Collector Pulsed (Icm) |
80 A |
| Td (on/off) @ 25°C |
60ns/240ns |
| Switching Energy |
500μJ (on), 400μJ (off) |
| Gate-Emitter Voltage-Max |
25 V |
| Reverse Recovery Time (trr) |
90 ns |
| Configuration |
Single |
| Product Category |
IGBT Transistors |
Toshiba Semiconductor and Storage GT20N135SRA,S1E
In stock
| Manufacturer |
Toshiba |
|---|---|
| Subcategory |
IGBTs |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 |
| Mounting Style |
Through Hole |
| Brand |
Toshiba |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Packaging |
Tube |
| Mounting Type |
Through Hole |
| Configuration |
Single |
| Technology |
Si |
| Input Type |
Standard |
| Power - Max |
312 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1350 V |
| Current - Collector (Ic) (Max) |
40 A |
| Test Condition |
300V, 40A, 39Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 40A |
| Gate Charge |
185 nC |
| Current - Collector Pulsed (Icm) |
80 A |
| Switching Energy |
-, 700μJ (off) |
| Product Category |
IGBT Transistors |
Toshiba Semiconductor and Storage GT30J121(Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Number of Pins |
3 |
| Collector-Emitter Breakdown Voltage |
600V |
| Test Conditions |
300V, 30A, 24 Ω, 15V |
| Packaging |
Tube |
| Published |
2006 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Max Power Dissipation |
170W |
| Element Configuration |
Single |
| Input Type |
Standard |
| Collector Emitter Voltage (VCEO) |
600V |
| Max Collector Current |
30A |
| Vce(on) (Max) @ Vge, Ic |
2.45V @ 15V, 30A |
| Current - Collector Pulsed (Icm) |
60A |
| Td (on/off) @ 25°C |
90ns/300ns |
| Switching Energy |
1mJ (on), 800μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Toshiba Semiconductor and Storage GT30J341,Q
In stock
| Manufacturer |
Toshiba |
|---|---|
| Subcategory |
IGBTs |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P(N) |
| Mounting Style |
Through Hole |
| Base Product Number |
GT30J341 |
| Brand |
Toshiba |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tray |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Packaging |
Tray |
| Factory Lead Time |
12 Weeks |
| Reach Compliance Code |
unknown |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
230 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
59 A |
| Test Condition |
300V, 30A, 24Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
80ns/280ns |
| Switching Energy |
800μJ (on), 600μJ (off) |
| Reverse Recovery Time (trr) |
50 ns |
| Product Category |
IGBT Transistors |
Toshiba Semiconductor and Storage GT30N135SRA,S1E
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247 |
| Mounting Style |
Through Hole |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
348 W |
| Voltage - Collector Emitter Breakdown (Max) |
1350 V |
| Current - Collector (Ic) (Max) |
60 A |
| Test Condition |
300V, 60A, 39Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 60A |
| Gate Charge |
270 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Switching Energy |
-, 1.3mJ (off) |