Showing 3673–3680 of 3680 results
Toshiba Semiconductor and Storage GT40WR21,Q
In stock
| Manufacturer |
Toshiba |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P(N) |
| Mounting Style |
Through Hole |
| Brand |
Toshiba |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tray |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Packaging |
Tray |
| Subcategory |
IGBTs |
| Technology |
Si |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
375 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1350 V |
| Current - Collector (Ic) (Max) |
40 A |
| Vce(on) (Max) @ Vge, Ic |
5.9V @ 15V, 40A |
| Current - Collector Pulsed (Icm) |
80 A |
| Product Category |
IGBT Transistors |
Toshiba Semiconductor and Storage GT50J341,Q
In stock
| Manufacturer |
Toshiba |
|---|---|
| Factory Lead Time |
12 Weeks |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P(N) |
| Mounting Style |
Through Hole |
| Brand |
Toshiba |
| Maximum Operating Temperature |
+ 175 C |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Reach Compliance Code |
unknown |
| Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
200 W |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
50 A |
| Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 50A |
| Current - Collector Pulsed (Icm) |
100 A |
| Product Category |
IGBT Transistors |
Toshiba Semiconductor and Storage GT50JR21(STA1,E,S)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Supplier Device Package |
TO-3P(N) |
| Package |
Tube |
| Product Status |
Active |
| Operating Temperature |
175°C (TJ) |
| Power Dissipation |
230 |
| Input Type |
Standard |
| Power - Max |
230 W |
| Voltage - Collector Emitter Breakdown (Max) |
600 V |
| Current - Collector (Ic) (Max) |
50 A |
| Collector Emitter Saturation Voltage |
1.45 |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| Continuous Collector Current |
50 |
| Current - Collector Pulsed (Icm) |
100 A |
Toshiba Semiconductor and Storage GT50N322A
In stock
| Manufacturer |
Toshiba |
|---|---|
| Maximum Operating Temperature |
+ 150 C |
| Mounting Type |
Through Hole |
| Package / Case |
TO-3P-3, SC-65-3 |
| Surface Mount |
NO |
| Supplier Device Package |
TO-3P(N) |
| Number of Terminals |
3 |
| Transistor Element Material |
SILICON |
| Mounting Style |
Through Hole |
| Terminal Position |
SINGLE |
| Factory Lead Time |
12 Weeks |
| Minimum Operating Temperature |
– 55 C |
| Package |
Tube |
| Package Shape |
RECTANGULAR |
| Product Status |
Active |
| Operating Temperature |
150°C (TJ) |
| Packaging |
Tube |
| Subcategory |
IGBTs |
| Technology |
Si |
| Brand |
Toshiba |
| Terminal Form |
THROUGH-HOLE |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JESD-30 Code |
R-PSFM-T3 |
| Qualification Status |
Not Qualified |
| Number of Elements |
1 |
| Configuration |
Single |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
156 W |
| Reach Compliance Code |
unknown |
| Pin Count |
3 |
| Product Type |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
1000 V |
| Current - Collector (Ic) (Max) |
50 A |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 60A |
| Collector Current-Max (IC) |
50 A |
| Collector-Emitter Voltage-Max |
1000 V |
| Current - Collector Pulsed (Icm) |
120 A |
| Reverse Recovery Time (trr) |
800 ns |
| Product Category |
IGBT Transistors |
Toshiba Semiconductor and Storage GT60N321(Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Mounting Type |
Through Hole |
| Package / Case |
TO-3PL |
| Current-Collector (Ic) (Max) |
60A |
| Operating Temperature |
150°C TJ |
| Packaging |
Tube |
| Published |
2007 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Base Part Number |
GT60 |
| Input Type |
Standard |
| Power - Max |
170W |
| Reverse Recovery Time |
2.5μs |
| Voltage - Collector Emitter Breakdown (Max) |
1000V |
| Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 60A |
| Current - Collector Pulsed (Icm) |
120A |
| Td (on/off) @ 25°C |
330ns/700ns |
Toshiba Semiconductor and Storage GT8G133(TE12L,Q)
In stock
| Manufacturer |
Toshiba Semiconductor and Storage |
|---|---|
| Part Status |
Obsolete |
| Mounting Type |
Surface Mount |
| Package / Case |
8-TSSOP (0.173, 4.40mm Width) |
| Supplier Device Package |
8-TSSOP |
| Collector-Emitter Breakdown Voltage |
400V |
| Operating Temperature |
150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2007 |
| Mount |
Surface Mount |
| Max Power Dissipation |
600mW |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Input Type |
Standard |
| Power - Max |
600mW |
| Collector Emitter Voltage (VCEO) |
2.9V |
| Voltage - Collector Emitter Breakdown (Max) |
400V |
| Vce(on) (Max) @ Vge, Ic |
2.9V @ 4V, 150A |
| Current - Collector Pulsed (Icm) |
150A |
| Td (on/off) @ 25°C |
1.7μs/2μs |
| RoHS Status |
RoHS Compliant |
WeEn Semiconductors WG50N65DHJQ
In stock
| Manufacturer |
WeEn Semiconductors |
|---|---|
| Input Type |
Standard |
| Package / Case |
TO-247-3 |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
WG50N65D |
| Brand |
WeEn Semiconductors |
| Factory Pack Quantity:Factory Pack Quantity |
480 |
| Mfr |
WeEn Semiconductors |
| Package |
Bulk |
| Product Status |
Active |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Subcategory |
IGBTs |
| Mounting Type |
Through Hole |
| Product Type |
IGBT Transistors |
| Power - Max |
278 W |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Current - Collector (Ic) (Max) |
91 A |
| Test Condition |
400V, 50A, 10Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
160 nC |
| Current - Collector Pulsed (Icm) |
200 A |
| Td (on/off) @ 25°C |
66ns/163ns |
| Switching Energy |
1.7mJ (on), 600µJ (off) |
| Reverse Recovery Time (trr) |
105 ns |
| Product Category |
IGBT Transistors |
WeEn Semiconductors WG50N65DHWQ
In stock
| Manufacturer |
WeEn Semiconductors |
|---|---|
| Maximum Operating Temperature |
+ 150 C |
| Supplier Device Package |
TO-247-3 |
| Base Product Number |
WG50N65D |
| Brand |
WeEn Semiconductors |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Current-Collector (Ic) (Max) |
91 A |
| Factory Pack QuantityFactory Pack Quantity |
600 |
| Test Conditions |
400V, 50A, 10Ohm, 15V |
| Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
| Mfr |
WeEn Semiconductors |
| Minimum Operating Temperature |
– 55 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Part # Aliases |
934072776127 |
| Pd - Power Dissipation |
278 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Packaging |
Tube |
| Technology |
Si |
| Configuration |
Single |
| Power Dissipation |
278 |
| Input Type |
Standard |
| Power - Max |
278 W |
| Product Type |
IGBT Transistors |
| Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
| Continuous Collector Current |
91 |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
160 nC |
| Current - Collector Pulsed (Icm) |
200 A |
| Td (on/off) @ 25°C |
66ns/163ns |
| Switching Energy |
1.7mJ (on), 600μJ (off) |
| Reverse Recovery Time (trr) |
105 ns |
| Subcategory |
IGBTs |
| Product Category |
IGBT Transistors |