Transistors - IGBTs - Single

Infineon Technologies IKW25N120CS7XKSA1

In stock

SKU: IKW25N120CS7XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Supplier Device Package

PG-TO247-3

Base Product Number

IKW25N

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

1.2 kV

Current-Collector (Ic) (Max)

55 A

Factory Pack QuantityFactory Pack Quantity

240

Maximum Collector Emitter Voltage

1200 V

Test Conditions

600V, 25A, 6Ohm, 15V

Maximum Gate Emitter Voltage

±20V

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247-3

Part # Aliases

IKW25N120CS7 SP005419560

Pd - Power Dissipation

250 W

Product Status

Active

Package / Case

TO-247-3

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1200 V

Packaging

Tube

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

250W

Input Type

Standard

Power - Max

250 W

Product Type

IGBT Transistors

Channel Type

N

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 25A

Operating Temperature

-40°C ~ 175°C (TJ)

Continuous Collector Current

55A

IGBT Type

Trench Field Stop

Gate Charge

150 nC

Current - Collector Pulsed (Icm)

75 A

Td (on/off) @ 25°C

21ns/160ns

Switching Energy

1.2mJ (on), 1.1mJ (off)

Reverse Recovery Time (trr)

150 ns

Subcategory

IGBTs

Product Category

IGBT Transistors

Infineon Technologies IKW25N120H3XK

In stock

SKU: IKW25N120H3XK-9
Manufacturer

+ 175 C

Series

EAR99

Mounting Type

TO-247-3

Package / Case

NO

Supplier Device Package

3

Number of Terminals

SILICON

Transistor Element Material

Through Hole

Mfr

– 40 C

Package

RECTANGULAR

Rad Hardened

Details

Operating Temperature

Tube

Packaging

Trenchstop IGBT4

Factory Lead Time

20 Weeks

Terminal Position

THROUGH-HOLE

Technology

SINGLE

Terminal Form

NOT SPECIFIED

Peak Reflow Temperature (Cel)

compliant

Time@Peak Reflow Temperature-Max (s)

R-PSFM-T3

Operating Temperature (Min)

1

Number of Elements

Single

Power - Max

POWER CONTROL

Transistor Application

N-CHANNEL

Product Type

TO-247

Vce(on) (Max) @ Vge, Ic

50 A

Collector Current-Max (IC)

50

IGBT Type

1200 V

Infineon Technologies IKW25N120T2XK

In stock

SKU: IKW25N120T2XK-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3-21

Mfr

Infineon Technologies

Package

Bulk

Product Status

Active

Operating Temperature

-40°C ~ 175°C (TJ)

Series

TrenchStop?

Input Type

Standard

Power - Max

349 W

Voltage - Collector Emitter Breakdown (Max)

1200 V

Current - Collector (Ic) (Max)

50 A

Test Condition

600V, 25A, 16.4Ohm, 15V

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 25A

IGBT Type

Trench Field Stop

Gate Charge

120 nC

Current - Collector Pulsed (Icm)

100 A

Td (on/off) @ 25°C

27ns/265ns

Switching Energy

1.55mJ (on), 1.35mJ (off)

Reverse Recovery Time (trr)

195 ns

Infineon Technologies IKW25T120FKSA1

In stock

SKU: IKW25T120FKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

1.2kV

Number of Elements

1

Test Conditions

600V, 25A, 22 Ω, 15V

Max Power Dissipation

190W

Factory Lead Time

14 Weeks

Published

2006

Series

TrenchStop®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Operating Temperature

-40°C~150°C TJ

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

1200V

Turn On Time

82 ns

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2kV

Max Collector Current

50A

Reverse Recovery Time

200 ns

JEDEC-95 Code

TO-247AC

Element Configuration

Single

Power Dissipation

190W

Vce(on) (Max) @ Vge, Ic

2.2V @ 15V, 25A

Turn Off Time-Nom (toff)

790 ns

IGBT Type

NPT, Trench Field Stop

Gate Charge

155nC

Current - Collector Pulsed (Icm)

75A

Td (on/off) @ 25°C

50ns/560ns

Switching Energy

4.2mJ

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW30N60DTPXKSA1

In stock

SKU: IKW30N60DTPXKSA1-9
Manufacturer

Infineon Technologies

Published

2016

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 30A, 10.5 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Max Power Dissipation

200W

Packaging

Tube

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Mount

Through Hole

Factory Lead Time

16 Weeks

Max Collector Current

53A

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JESD-30 Code

R-PSFM-T3

Configuration

SINGLE WITH BUILT-IN DIODE

Input Type

Standard

Power - Max

200W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Reverse Recovery Time

76 ns

Turn On Time

38 ns

Terminal Position

SINGLE

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Turn Off Time-Nom (toff)

279 ns

IGBT Type

Trench Field Stop

Gate Charge

130nC

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

15ns/179ns

Switching Energy

710μJ (on), 420μJ (off)

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

RoHS Status

ROHS3 Compliant

Infineon Technologies IKW30N60H3FKSA1

In stock

SKU: IKW30N60H3FKSA1-9
Manufacturer

Infineon Technologies

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Test Conditions

400V, 30A, 10.5 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Published

2005

Series

TrenchStop®

Packaging

Tube

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Max Power Dissipation

187W

Mount

Through Hole

Factory Lead Time

16 Weeks

Reverse Recovery Time

38 ns

Turn On Time

50 ns

Qualification Status

Not Qualified

Element Configuration

Single

Input Type

Standard

Power - Max

187W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

60A

Base Part Number

*KW30N60

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 30A

Turn Off Time-Nom (toff)

262 ns

IGBT Type

Trench Field Stop

Gate Charge

165nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

21ns/207ns

Switching Energy

1.38mJ

RoHS Status

ROHS3 Compliant

Pin Count

3

Lead Free

Lead Free

Infineon Technologies IKW30N65EL5XKSA1

In stock

SKU: IKW30N65EL5XKSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

SwitchingFrequency

50Hz

ECCN Code

EAR99

Factory Lead Time

14 Weeks

Packaging

Tube

Published

2013

Series

TrenchStop™ 5

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Test Conditions

400V, 30A, 10 Ω, 15V

Terminal Finish

Tin (Sn)

Max Collector Current

85A

Reverse Recovery Time

100 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Input Type

Standard

Power - Max

227W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Power Dissipation

227W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Turn On Time

44 ns

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 30A

Turn Off Time-Nom (toff)

520 ns

Gate Charge

168nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

33ns/308ns

Switching Energy

470μJ (on), 1.35mJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW30N65ES5XKSA1

In stock

SKU: IKW30N65ES5XKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 30A, 13 Ω, 15V

Max Power Dissipation

188W

Factory Lead Time

16 Weeks

Published

2008

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Operating Temperature

-40°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reverse Recovery Time

75 ns

Turn On Time

30 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

188W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

62A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 30A

Turn Off Time-Nom (toff)

204 ns

IGBT Type

Trench

Gate Charge

70nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

17ns/124ns

Switching Energy

560μJ (on), 320μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW30N65ET7XKSA1

In stock

SKU: IKW30N65ET7XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

Base Product Number

IKW30N65

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

30 A

Factory Pack QuantityFactory Pack Quantity

240

Test Conditions

400V, 30A, 10Ohm, 15V

Mounting Type

Through Hole

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Part # Aliases

IKW30N65ET7 SP005348289

Pd - Power Dissipation

188 W

Product Status

Active

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Tradename

TRENCHSTOP

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 30A

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

188

Input Type

Standard

Power - Max

188 W

Product Type

IGBT Transistors

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Continuous Collector Current

60

IGBT Type

Trench Field Stop

Gate Charge

180 nC

Current - Collector Pulsed (Icm)

90 A

Td (on/off) @ 25°C

20ns/245ns

Switching Energy

590μJ (on), 500μJ (off)

Reverse Recovery Time (trr)

80 ns

Product Category

IGBT Transistors

Infineon Technologies IKW30N65H5XKSA1

In stock

SKU: IKW30N65H5XKSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Max Power Dissipation

188W

Factory Lead Time

14 Weeks

Packaging

Tube

Published

2013

Series

TrenchStop™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Test Conditions

400V, 15A, 23 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reverse Recovery Time

70 ns

Turn On Time

31 ns

Input Type

Standard

Power - Max

188W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

55A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 30A

Turn Off Time-Nom (toff)

246 ns

IGBT Type

Trench

Gate Charge

70nC

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

20ns/190ns

Switching Energy

280μJ (on), 100μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW30N65NL5XKSA1

In stock

SKU: IKW30N65NL5XKSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

SwitchingFrequency

50Hz

ECCN Code

EAR99

Factory Lead Time

14 Weeks

Packaging

Tube

Published

2013

Series

TrenchStop™ 5

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Test Conditions

400V, 30A, 23 Ω, 15V

Terminal Finish

Tin (Sn)

Max Collector Current

85A

Reverse Recovery Time

59 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Input Type

Standard

Power - Max

227W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Power Dissipation

227W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Turn On Time

76 ns

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 30A

Turn Off Time-Nom (toff)

514 ns

Gate Charge

168nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

59ns/283ns

Switching Energy

560μJ (on), 1.35mJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW30N65WR5XKSA1

In stock

SKU: IKW30N65WR5XKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 15A, 26 Ω, 15V

Terminal Finish

Tin (Sn)

Factory Lead Time

26 Weeks

Published

2005

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Operating Temperature

-40°C~175°C TJ

Max Power Dissipation

185W

Reverse Recovery Time

95 ns

Turn On Time

49 ns

Element Configuration

Single

Input Type

Standard

Power - Max

185W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

60A

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 30A

Turn Off Time-Nom (toff)

429 ns

IGBT Type

Trench

Gate Charge

155nC

Current - Collector Pulsed (Icm)

90A

Td (on/off) @ 25°C

39ns/367ns

Switching Energy

990μJ (on), 330μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free