Showing 733–744 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IKW25N120CS7XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Supplier Device Package |
PG-TO247-3 |
Base Product Number |
IKW25N |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
1.2 kV |
Current-Collector (Ic) (Max) |
55 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Maximum Collector Emitter Voltage |
1200 V |
Test Conditions |
600V, 25A, 6Ohm, 15V |
Maximum Gate Emitter Voltage |
±20V |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Package Type |
TO-247-3 |
Part # Aliases |
IKW25N120CS7 SP005419560 |
Pd - Power Dissipation |
250 W |
Product Status |
Active |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Packaging |
Tube |
Technology |
Si |
Pin Count |
3 |
Configuration |
Single |
Power Dissipation |
250W |
Input Type |
Standard |
Power - Max |
250 W |
Product Type |
IGBT Transistors |
Channel Type |
N |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 25A |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Continuous Collector Current |
55A |
IGBT Type |
Trench Field Stop |
Gate Charge |
150 nC |
Current - Collector Pulsed (Icm) |
75 A |
Td (on/off) @ 25°C |
21ns/160ns |
Switching Energy |
1.2mJ (on), 1.1mJ (off) |
Reverse Recovery Time (trr) |
150 ns |
Subcategory |
IGBTs |
Product Category |
IGBT Transistors |
Infineon Technologies IKW25N120H3XK
In stock
Manufacturer |
+ 175 C |
---|---|
Series |
EAR99 |
Mounting Type |
TO-247-3 |
Package / Case |
NO |
Supplier Device Package |
3 |
Number of Terminals |
SILICON |
Transistor Element Material |
Through Hole |
Mfr |
– 40 C |
Package |
RECTANGULAR |
Rad Hardened |
Details |
Operating Temperature |
Tube |
Packaging |
Trenchstop IGBT4 |
Factory Lead Time |
20 Weeks |
Terminal Position |
THROUGH-HOLE |
Technology |
SINGLE |
Terminal Form |
NOT SPECIFIED |
Peak Reflow Temperature (Cel) |
compliant |
Time@Peak Reflow Temperature-Max (s) |
R-PSFM-T3 |
Operating Temperature (Min) |
1 |
Number of Elements |
Single |
Power - Max |
POWER CONTROL |
Transistor Application |
N-CHANNEL |
Product Type |
TO-247 |
Vce(on) (Max) @ Vge, Ic |
50 A |
Collector Current-Max (IC) |
50 |
IGBT Type |
1200 V |
Infineon Technologies IKW25N120T2XK
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Supplier Device Package |
PG-TO247-3-21 |
Mfr |
Infineon Technologies |
Package |
Bulk |
Product Status |
Active |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Series |
TrenchStop? |
Input Type |
Standard |
Power - Max |
349 W |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Current - Collector (Ic) (Max) |
50 A |
Test Condition |
600V, 25A, 16.4Ohm, 15V |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 25A |
IGBT Type |
Trench Field Stop |
Gate Charge |
120 nC |
Current - Collector Pulsed (Icm) |
100 A |
Td (on/off) @ 25°C |
27ns/265ns |
Switching Energy |
1.55mJ (on), 1.35mJ (off) |
Reverse Recovery Time (trr) |
195 ns |
Infineon Technologies IKW25T120FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
1.2kV |
Number of Elements |
1 |
Test Conditions |
600V, 25A, 22 Ω, 15V |
Max Power Dissipation |
190W |
Factory Lead Time |
14 Weeks |
Published |
2006 |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Operating Temperature |
-40°C~150°C TJ |
Pin Count |
3 |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
Turn On Time |
82 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2kV |
Max Collector Current |
50A |
Reverse Recovery Time |
200 ns |
JEDEC-95 Code |
TO-247AC |
Element Configuration |
Single |
Power Dissipation |
190W |
Vce(on) (Max) @ Vge, Ic |
2.2V @ 15V, 25A |
Turn Off Time-Nom (toff) |
790 ns |
IGBT Type |
NPT, Trench Field Stop |
Gate Charge |
155nC |
Current - Collector Pulsed (Icm) |
75A |
Td (on/off) @ 25°C |
50ns/560ns |
Switching Energy |
4.2mJ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW30N60DTPXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2016 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 10.5 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Max Power Dissipation |
200W |
Packaging |
Tube |
Series |
TrenchStop™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Max Collector Current |
53A |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JESD-30 Code |
R-PSFM-T3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Input Type |
Standard |
Power - Max |
200W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Reverse Recovery Time |
76 ns |
Turn On Time |
38 ns |
Terminal Position |
SINGLE |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Turn Off Time-Nom (toff) |
279 ns |
IGBT Type |
Trench Field Stop |
Gate Charge |
130nC |
Current - Collector Pulsed (Icm) |
90A |
Td (on/off) @ 25°C |
15ns/179ns |
Switching Energy |
710μJ (on), 420μJ (off) |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKW30N60H3FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
400V, 30A, 10.5 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Published |
2005 |
Series |
TrenchStop® |
Packaging |
Tube |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
187W |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Reverse Recovery Time |
38 ns |
Turn On Time |
50 ns |
Qualification Status |
Not Qualified |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
187W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
60A |
Base Part Number |
*KW30N60 |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 30A |
Turn Off Time-Nom (toff) |
262 ns |
IGBT Type |
Trench Field Stop |
Gate Charge |
165nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
21ns/207ns |
Switching Energy |
1.38mJ |
RoHS Status |
ROHS3 Compliant |
Pin Count |
3 |
Lead Free |
Lead Free |
Infineon Technologies IKW30N65EL5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
SwitchingFrequency |
50Hz |
ECCN Code |
EAR99 |
Factory Lead Time |
14 Weeks |
Packaging |
Tube |
Published |
2013 |
Series |
TrenchStop™ 5 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Test Conditions |
400V, 30A, 10 Ω, 15V |
Terminal Finish |
Tin (Sn) |
Max Collector Current |
85A |
Reverse Recovery Time |
100 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
227W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Power Dissipation |
227W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Turn On Time |
44 ns |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 30A |
Turn Off Time-Nom (toff) |
520 ns |
Gate Charge |
168nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
33ns/308ns |
Switching Energy |
470μJ (on), 1.35mJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW30N65ES5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Test Conditions |
400V, 30A, 13 Ω, 15V |
Max Power Dissipation |
188W |
Factory Lead Time |
16 Weeks |
Published |
2008 |
Series |
TrenchStop™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Operating Temperature |
-40°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
75 ns |
Turn On Time |
30 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
188W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
62A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 30A |
Turn Off Time-Nom (toff) |
204 ns |
IGBT Type |
Trench |
Gate Charge |
70nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
17ns/124ns |
Switching Energy |
560μJ (on), 320μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW30N65ET7XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Package / Case |
TO-247-3 |
Supplier Device Package |
PG-TO247-3 |
Base Product Number |
IKW30N65 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
30 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Test Conditions |
400V, 30A, 10Ohm, 15V |
Mounting Type |
Through Hole |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Part # Aliases |
IKW30N65ET7 SP005348289 |
Pd - Power Dissipation |
188 W |
Product Status |
Active |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Tradename |
TRENCHSTOP |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Vce(on) (Max) @ Vge, Ic |
1.65V @ 15V, 30A |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
188 |
Input Type |
Standard |
Power - Max |
188 W |
Product Type |
IGBT Transistors |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Tube |
Continuous Collector Current |
60 |
IGBT Type |
Trench Field Stop |
Gate Charge |
180 nC |
Current - Collector Pulsed (Icm) |
90 A |
Td (on/off) @ 25°C |
20ns/245ns |
Switching Energy |
590μJ (on), 500μJ (off) |
Reverse Recovery Time (trr) |
80 ns |
Product Category |
IGBT Transistors |
Infineon Technologies IKW30N65H5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Max Power Dissipation |
188W |
Factory Lead Time |
14 Weeks |
Packaging |
Tube |
Published |
2013 |
Series |
TrenchStop™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Test Conditions |
400V, 15A, 23 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
70 ns |
Turn On Time |
31 ns |
Input Type |
Standard |
Power - Max |
188W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
55A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 30A |
Turn Off Time-Nom (toff) |
246 ns |
IGBT Type |
Trench |
Gate Charge |
70nC |
Current - Collector Pulsed (Icm) |
90A |
Td (on/off) @ 25°C |
20ns/190ns |
Switching Energy |
280μJ (on), 100μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW30N65NL5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
SwitchingFrequency |
50Hz |
ECCN Code |
EAR99 |
Factory Lead Time |
14 Weeks |
Packaging |
Tube |
Published |
2013 |
Series |
TrenchStop™ 5 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Test Conditions |
400V, 30A, 23 Ω, 15V |
Terminal Finish |
Tin (Sn) |
Max Collector Current |
85A |
Reverse Recovery Time |
59 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
227W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Power Dissipation |
227W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Turn On Time |
76 ns |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 30A |
Turn Off Time-Nom (toff) |
514 ns |
Gate Charge |
168nC |
Current - Collector Pulsed (Icm) |
120A |
Td (on/off) @ 25°C |
59ns/283ns |
Switching Energy |
560μJ (on), 1.35mJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW30N65WR5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Test Conditions |
400V, 15A, 26 Ω, 15V |
Terminal Finish |
Tin (Sn) |
Factory Lead Time |
26 Weeks |
Published |
2005 |
Series |
TrenchStop™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Operating Temperature |
-40°C~175°C TJ |
Max Power Dissipation |
185W |
Reverse Recovery Time |
95 ns |
Turn On Time |
49 ns |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
185W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
60A |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 30A |
Turn Off Time-Nom (toff) |
429 ns |
IGBT Type |
Trench |
Gate Charge |
155nC |
Current - Collector Pulsed (Icm) |
90A |
Td (on/off) @ 25°C |
39ns/367ns |
Switching Energy |
990μJ (on), 330μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |