Transistors - IGBTs - Single

Infineon Technologies IKW40T120FKSA1

In stock

SKU: IKW40T120FKSA1-9
Manufacturer

Infineon Technologies

Published

2006

Mounting Type

Through Hole

Package / Case

TO-247-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

75A

Number of Elements

1

Test Conditions

600V, 40A, 15 Ω, 15V

Operating Temperature

-40°C~150°C TJ

Terminal Position

SINGLE

Factory Lead Time

14 Weeks

Series

TrenchStop®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Packaging

Tube

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JEDEC-95 Code

TO-247AD

Voltage - Collector Emitter Breakdown (Max)

1200V

JESD-30 Code

R-PSFM-T3

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

270W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

240ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Turn On Time

92 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 40A

Turn Off Time-Nom (toff)

700 ns

IGBT Type

NPT, Trench Field Stop

Gate Charge

203nC

Current - Collector Pulsed (Icm)

105A

Td (on/off) @ 25°C

48ns/480ns

Switching Energy

6.5mJ

RoHS Status

ROHS3 Compliant

Infineon Technologies IKW40T120XK

In stock

SKU: IKW40T120XK-9
Manufacturer

Infineon Technologies

Factory Lead Time

52 Weeks

Mount

Through Hole

Package / Case

TO-247-3

Surface Mount

NO

Number of Pins

3

Number of Terminals

3

Transistor Element Material

SILICON

Mounting Style

Through Hole

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

– 40 C

Package Shape

RECTANGULAR

Tradename

TRENCHSTOP

Packaging

Tube

Series

Trenchstop IGBT3

ECCN Code

EAR99

Terminal Position

SINGLE

Terminal Form

THROUGH-HOLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reach Compliance Code

compliant

JESD-30 Code

R-PSFM-T3

Number of Elements

1

Configuration

Single

Element Configuration

Single

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.2 kV

Max Collector Current

75 A

JEDEC-95 Code

TO-247AC

Collector Current-Max (IC)

75 A

Continuous Collector Current

75

Collector-Emitter Voltage-Max

1200 V

Infineon Technologies IKW40TI20FKSA1

In stock

SKU: IKW40TI20FKSA1-9
Manufacturer

Infineon Technologies

Factory Lead Time

Through Hole

Mounting Type

TO-247-3

Surface Mount

PG-TO247-3

Maximum Operating Temperature

Infineon Technologies

Operating Temperature Classification

Bulk

Package Type

Active

Tradename

-40°C ~ 150°C (TJ)

Packaging

TrenchStop?

Case Connection

Standard

Input Type

270 W

JEDEC-95 Code

1200 V

Voltage - Collector Emitter Breakdown (Max)

75 A

Channel Type

600V, 40A, 15Ohm, 15V

Test Condition

2.3V @ 15V, 40A

Continuous Collector Current

Trench Field Stop

Collector-Emitter Voltage-Max

203 nC

Gate Charge

105 A

Current - Collector Pulsed (Icm)

48ns/480ns

Td (on/off) @ 25°C

3.3mJ (on), 3.2mJ (off)

Switching Energy

240 ns

Infineon Technologies IKW50N120CS7XKSA1

In stock

SKU: IKW50N120CS7XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Supplier Device Package

PG-TO247-3

Base Product Number

IKW50N

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

1.2 kV

Current-Collector (Ic) (Max)

82 A

Factory Pack QuantityFactory Pack Quantity

240

Maximum Collector Emitter Voltage

1200 V

Test Conditions

600V, 50A, 2.3Ohm, 15V

Maximum Gate Emitter Voltage

±20V

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247-3

Part # Aliases

IKW50N120CS7 SP005419710

Pd - Power Dissipation

428 W

Product Status

Active

Package / Case

TO-247-3

Mounting Type

Through Hole

Voltage - Collector Emitter Breakdown (Max)

1200 V

Packaging

Tube

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

428W

Input Type

Standard

Power - Max

428 W

Product Type

IGBT Transistors

Channel Type

N

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 50A

Operating Temperature

-40°C ~ 175°C (TJ)

Continuous Collector Current

82A

IGBT Type

Trench Field Stop

Gate Charge

290 nC

Current - Collector Pulsed (Icm)

150 A

Td (on/off) @ 25°C

29ns/170ns

Switching Energy

2.8mJ (on), 2.2mJ (off)

Reverse Recovery Time (trr)

165 ns

Subcategory

IGBTs

Product Category

IGBT Transistors

Infineon Technologies IKW50N60DTPXKSA1

In stock

SKU: IKW50N60DTPXKSA1-9
Manufacturer

Infineon Technologies

Published

2016

Mounting Type

Through Hole

Package / Case

TO-247-3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 7 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Max Power Dissipation

319.2W

Packaging

Tube

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

Not Applicable

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Mount

Through Hole

Factory Lead Time

16 Weeks

Max Collector Current

80A

Peak Reflow Temperature (Cel)

NOT SPECIFIED

JESD-30 Code

R-PSFM-T3

Configuration

SINGLE WITH BUILT-IN DIODE

Input Type

Standard

Power - Max

319.2W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Reverse Recovery Time

115 ns

Turn On Time

55 ns

Terminal Position

SINGLE

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 50A

Turn Off Time-Nom (toff)

332 ns

IGBT Type

Trench Field Stop

Gate Charge

249nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

20ns/215ns

Switching Energy

1.53mJ (on), 850μJ (off)

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

RoHS Status

ROHS3 Compliant

Infineon Technologies IKW50N60H3FKSA1

In stock

SKU: IKW50N60H3FKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 50A, 7 Ω, 15V

Terminal Finish

Tin (Sn)

Operating Temperature

-40°C~175°C TJ

Published

2008

Series

TrenchStop®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Mount

Through Hole

Factory Lead Time

16 Weeks

Turn On Time

54 ns

Pin Count

3

Input Type

Standard

Power - Max

333W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

100A

Reverse Recovery Time

130 ns

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 50A

Turn Off Time-Nom (toff)

297 ns

Max Power Dissipation

333W

IGBT Type

Trench Field Stop

Gate Charge

315nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

23ns/235ns

Switching Energy

2.36mJ

Radiation Hardening

No

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IKW50N65EH5XKSA1

In stock

SKU: IKW50N65EH5XKSA1-9
Manufacturer

Infineon Technologies

Max Power Dissipation

275W

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 50A, 12 Ω, 15V

Packaging

Tube

Published

2003

Operating Temperature

-40°C~175°C TJ

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Mount

Through Hole

Factory Lead Time

26 Weeks

Reverse Recovery Time

81 ns

Turn On Time

54 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

275W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

220 ns

IGBT Type

Trench

Gate Charge

120nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

25ns/172ns

Switching Energy

1.5mJ (on), 500μJ (off)

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IKW50N65ES5XKSA1

In stock

SKU: IKW50N65ES5XKSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

26 Weeks

Packaging

Tube

Published

2003

Series

TrenchStop™

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Max Power Dissipation

274W

Test Conditions

400V, 50A, 8.2 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reverse Recovery Time

70 ns

Turn On Time

45 ns

Input Type

Standard

Power - Max

274W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Element Configuration

Single

Case Connection

COLLECTOR

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 50A

Turn Off Time-Nom (toff)

198 ns

IGBT Type

Trench

Gate Charge

120nC

Current - Collector Pulsed (Icm)

200A

Td (on/off) @ 25°C

20ns/127ns

Switching Energy

1.23mJ (on), 550μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW50N65F5AXKSA1

In stock

SKU: IKW50N65F5AXKSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Factory Lead Time

14 Weeks

Packaging

Tube

Published

2013

Pbfree Code

yes

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Max Power Dissipation

270W

Test Conditions

400V, 25A, 12 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reverse Recovery Time

77 ns

Turn On Time

35 ns

Input Type

Standard

Power - Max

270W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Element Configuration

Single

Case Connection

COLLECTOR

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Turn Off Time-Nom (toff)

196 ns

IGBT Type

Trench

Gate Charge

108nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

21ns/156ns

Switching Energy

490μJ (on), 140μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW50N65F5FKSA1

In stock

SKU: IKW50N65F5FKSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Part Status

Active

Pbfree Code

yes

JESD-609 Code

e3

Series

TrenchStop®

Published

2008

ECCN Code

EAR99

Packaging

Tube

Test Conditions

400V, 25A, 12 Ω, 15V

Collector-Emitter Breakdown Voltage

650V

Number of Pins

3

Package / Case

TO-247-3

Mounting Type

Through Hole

Mount

Through Hole

Factory Lead Time

16 Weeks

Max Power Dissipation

305W

Gate Charge

120nC

RoHS Status

ROHS3 Compliant

REACH SVHC

Unknown

Radiation Hardening

No

Switching Energy

490μJ (on), 160μJ (off)

Td (on/off) @ 25°C

21ns/175ns

Current - Collector Pulsed (Icm)

150A

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Terminal Finish

Tin (Sn)

Reverse Recovery Time

52 ns

Max Collector Current

80A

Collector Emitter Voltage (VCEO)

1.6V

Input Type

Standard

Power Dissipation

305W

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IKW50N65H5FKSA1

In stock

SKU: IKW50N65H5FKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Collector-Emitter Breakdown Voltage

650V

Test Conditions

400V, 25A, 12 Ω, 15V

ECCN Code

EAR99

Factory Lead Time

14 Weeks

Published

2008

Series

TrenchStop®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Operating Temperature

-40°C~175°C TJ

Terminal Finish

Tin (Sn)

Reverse Recovery Time

57 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Power Dissipation

305W

Input Type

Standard

Collector Emitter Voltage (VCEO)

1.65V

Max Collector Current

80A

Max Power Dissipation

305W

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Gate Charge

120nC

Current - Collector Pulsed (Icm)

150A

Td (on/off) @ 25°C

21ns/180ns

Switching Energy

520μJ (on), 180μJ (off)

REACH SVHC

Unknown

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW50N65RH5XKSA1

In stock

SKU: IKW50N65RH5XKSA1-9
Manufacturer

Infineon

Maximum Gate Emitter Voltage

15V

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

Base Product Number

IKW50N65

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

240

Product Status

Active

Mounting Type

Through Hole

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

PG-TO247-3

Part # Aliases

IKW50N65RH5 SP004038142

Pd - Power Dissipation

305 W

Maximum Collector Emitter Voltage

650 V

Test Conditions

400V, 25A, 12Ohm, 15V

Power - Max

305 W

Product Type

IGBT Transistors

Packaging

Tube

Series

TrenchStop? 5

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

305W

Input Type

Standard

Tradename

TRENCHSTOP ~ CoolSiC

Operating Temperature

-40°C ~ 175°C (TJ)

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Continuous Collector Current

80A

IGBT Type

Trench Field Stop

Gate Charge

120 nC

Current - Collector Pulsed (Icm)

200 A

Td (on/off) @ 25°C

22ns/180ns

Switching Energy

230μJ (on), 180μJ (off)

Product Category

IGBT Transistors