Showing 757–768 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IKW40T120FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2006 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
75A |
Number of Elements |
1 |
Test Conditions |
600V, 40A, 15 Ω, 15V |
Operating Temperature |
-40°C~150°C TJ |
Terminal Position |
SINGLE |
Factory Lead Time |
14 Weeks |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JEDEC-95 Code |
TO-247AD |
Voltage - Collector Emitter Breakdown (Max) |
1200V |
JESD-30 Code |
R-PSFM-T3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
270W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
240ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Turn On Time |
92 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 40A |
Turn Off Time-Nom (toff) |
700 ns |
IGBT Type |
NPT, Trench Field Stop |
Gate Charge |
203nC |
Current - Collector Pulsed (Icm) |
105A |
Td (on/off) @ 25°C |
48ns/480ns |
Switching Energy |
6.5mJ |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKW40T120XK
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
52 Weeks |
Mount |
Through Hole |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Number of Pins |
3 |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Mounting Style |
Through Hole |
Maximum Operating Temperature |
+ 150 C |
Minimum Operating Temperature |
– 40 C |
Package Shape |
RECTANGULAR |
Tradename |
TRENCHSTOP |
Packaging |
Tube |
Series |
Trenchstop IGBT3 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reach Compliance Code |
compliant |
JESD-30 Code |
R-PSFM-T3 |
Number of Elements |
1 |
Configuration |
Single |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.2 kV |
Max Collector Current |
75 A |
JEDEC-95 Code |
TO-247AC |
Collector Current-Max (IC) |
75 A |
Continuous Collector Current |
75 |
Collector-Emitter Voltage-Max |
1200 V |
Infineon Technologies IKW40TI20FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Factory Lead Time |
Through Hole |
Mounting Type |
TO-247-3 |
Surface Mount |
PG-TO247-3 |
Maximum Operating Temperature |
Infineon Technologies |
Operating Temperature Classification |
Bulk |
Package Type |
Active |
Tradename |
-40°C ~ 150°C (TJ) |
Packaging |
TrenchStop? |
Case Connection |
Standard |
Input Type |
270 W |
JEDEC-95 Code |
1200 V |
Voltage - Collector Emitter Breakdown (Max) |
75 A |
Channel Type |
600V, 40A, 15Ohm, 15V |
Test Condition |
2.3V @ 15V, 40A |
Continuous Collector Current |
Trench Field Stop |
Collector-Emitter Voltage-Max |
203 nC |
Gate Charge |
105 A |
Current - Collector Pulsed (Icm) |
48ns/480ns |
Td (on/off) @ 25°C |
3.3mJ (on), 3.2mJ (off) |
Switching Energy |
240 ns |
Infineon Technologies IKW50N120CS7XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Supplier Device Package |
PG-TO247-3 |
Base Product Number |
IKW50N |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
1.2 kV |
Current-Collector (Ic) (Max) |
82 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Maximum Collector Emitter Voltage |
1200 V |
Test Conditions |
600V, 50A, 2.3Ohm, 15V |
Maximum Gate Emitter Voltage |
±20V |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Package Type |
TO-247-3 |
Part # Aliases |
IKW50N120CS7 SP005419710 |
Pd - Power Dissipation |
428 W |
Product Status |
Active |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |
Packaging |
Tube |
Technology |
Si |
Pin Count |
3 |
Configuration |
Single |
Power Dissipation |
428W |
Input Type |
Standard |
Power - Max |
428 W |
Product Type |
IGBT Transistors |
Channel Type |
N |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 50A |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Continuous Collector Current |
82A |
IGBT Type |
Trench Field Stop |
Gate Charge |
290 nC |
Current - Collector Pulsed (Icm) |
150 A |
Td (on/off) @ 25°C |
29ns/170ns |
Switching Energy |
2.8mJ (on), 2.2mJ (off) |
Reverse Recovery Time (trr) |
165 ns |
Subcategory |
IGBTs |
Product Category |
IGBT Transistors |
Infineon Technologies IKW50N60DTPXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2016 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 7 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Max Power Dissipation |
319.2W |
Packaging |
Tube |
Series |
TrenchStop™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
Not Applicable |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Max Collector Current |
80A |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
JESD-30 Code |
R-PSFM-T3 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Input Type |
Standard |
Power - Max |
319.2W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Reverse Recovery Time |
115 ns |
Turn On Time |
55 ns |
Terminal Position |
SINGLE |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 50A |
Turn Off Time-Nom (toff) |
332 ns |
IGBT Type |
Trench Field Stop |
Gate Charge |
249nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
20ns/215ns |
Switching Energy |
1.53mJ (on), 850μJ (off) |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKW50N60H3FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 7 Ω, 15V |
Terminal Finish |
Tin (Sn) |
Operating Temperature |
-40°C~175°C TJ |
Published |
2008 |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Turn On Time |
54 ns |
Pin Count |
3 |
Input Type |
Standard |
Power - Max |
333W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
100A |
Reverse Recovery Time |
130 ns |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 50A |
Turn Off Time-Nom (toff) |
297 ns |
Max Power Dissipation |
333W |
IGBT Type |
Trench Field Stop |
Gate Charge |
315nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
23ns/235ns |
Switching Energy |
2.36mJ |
Radiation Hardening |
No |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Infineon Technologies IKW50N65EH5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Max Power Dissipation |
275W |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Test Conditions |
400V, 50A, 12 Ω, 15V |
Packaging |
Tube |
Published |
2003 |
Operating Temperature |
-40°C~175°C TJ |
Series |
TrenchStop™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Mount |
Through Hole |
Factory Lead Time |
26 Weeks |
Reverse Recovery Time |
81 ns |
Turn On Time |
54 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
275W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
80A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Turn Off Time-Nom (toff) |
220 ns |
IGBT Type |
Trench |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
25ns/172ns |
Switching Energy |
1.5mJ (on), 500μJ (off) |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Infineon Technologies IKW50N65ES5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
26 Weeks |
Packaging |
Tube |
Published |
2003 |
Series |
TrenchStop™ |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Max Power Dissipation |
274W |
Test Conditions |
400V, 50A, 8.2 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reverse Recovery Time |
70 ns |
Turn On Time |
45 ns |
Input Type |
Standard |
Power - Max |
274W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
80A |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 50A |
Turn Off Time-Nom (toff) |
198 ns |
IGBT Type |
Trench |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
200A |
Td (on/off) @ 25°C |
20ns/127ns |
Switching Energy |
1.23mJ (on), 550μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW50N65F5AXKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Factory Lead Time |
14 Weeks |
Packaging |
Tube |
Published |
2013 |
Pbfree Code |
yes |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Max Power Dissipation |
270W |
Test Conditions |
400V, 25A, 12 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reverse Recovery Time |
77 ns |
Turn On Time |
35 ns |
Input Type |
Standard |
Power - Max |
270W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
80A |
Element Configuration |
Single |
Case Connection |
COLLECTOR |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Turn Off Time-Nom (toff) |
196 ns |
IGBT Type |
Trench |
Gate Charge |
108nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
21ns/156ns |
Switching Energy |
490μJ (on), 140μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW50N65F5FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Part Status |
Active |
Pbfree Code |
yes |
JESD-609 Code |
e3 |
Series |
TrenchStop® |
Published |
2008 |
ECCN Code |
EAR99 |
Packaging |
Tube |
Test Conditions |
400V, 25A, 12 Ω, 15V |
Collector-Emitter Breakdown Voltage |
650V |
Number of Pins |
3 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Max Power Dissipation |
305W |
Gate Charge |
120nC |
RoHS Status |
ROHS3 Compliant |
REACH SVHC |
Unknown |
Radiation Hardening |
No |
Switching Energy |
490μJ (on), 160μJ (off) |
Td (on/off) @ 25°C |
21ns/175ns |
Current - Collector Pulsed (Icm) |
150A |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Terminal Finish |
Tin (Sn) |
Reverse Recovery Time |
52 ns |
Max Collector Current |
80A |
Collector Emitter Voltage (VCEO) |
1.6V |
Input Type |
Standard |
Power Dissipation |
305W |
Element Configuration |
Single |
Lead Free |
Lead Free |
Infineon Technologies IKW50N65H5FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
650V |
Test Conditions |
400V, 25A, 12 Ω, 15V |
ECCN Code |
EAR99 |
Factory Lead Time |
14 Weeks |
Published |
2008 |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Operating Temperature |
-40°C~175°C TJ |
Terminal Finish |
Tin (Sn) |
Reverse Recovery Time |
57 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Power Dissipation |
305W |
Input Type |
Standard |
Collector Emitter Voltage (VCEO) |
1.65V |
Max Collector Current |
80A |
Max Power Dissipation |
305W |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Gate Charge |
120nC |
Current - Collector Pulsed (Icm) |
150A |
Td (on/off) @ 25°C |
21ns/180ns |
Switching Energy |
520μJ (on), 180μJ (off) |
REACH SVHC |
Unknown |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW50N65RH5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Gate Emitter Voltage |
15V |
Package / Case |
TO-247-3 |
Supplier Device Package |
PG-TO247-3 |
Base Product Number |
IKW50N65 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Product Status |
Active |
Mounting Type |
Through Hole |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Package Type |
PG-TO247-3 |
Part # Aliases |
IKW50N65RH5 SP004038142 |
Pd - Power Dissipation |
305 W |
Maximum Collector Emitter Voltage |
650 V |
Test Conditions |
400V, 25A, 12Ohm, 15V |
Power - Max |
305 W |
Product Type |
IGBT Transistors |
Packaging |
Tube |
Series |
TrenchStop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
305W |
Input Type |
Standard |
Tradename |
TRENCHSTOP ~ CoolSiC |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Continuous Collector Current |
80A |
IGBT Type |
Trench Field Stop |
Gate Charge |
120 nC |
Current - Collector Pulsed (Icm) |
200 A |
Td (on/off) @ 25°C |
22ns/180ns |
Switching Energy |
230μJ (on), 180μJ (off) |
Product Category |
IGBT Transistors |