Transistors - IGBTs - Single

Infineon Technologies IKW50N65SS5XKSA1

In stock

SKU: IKW50N65SS5XKSA1-9
Manufacturer

Infineon

Maximum Gate Emitter Voltage

15V

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

Base Product Number

IKW50N65

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

240

Product Status

Active

Mounting Type

Through Hole

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

PG-TO247-3

Part # Aliases

IKW50N65SS5 SP001668430

Pd - Power Dissipation

274 W

Maximum Collector Emitter Voltage

650 V

Test Conditions

400V, 50A, 9Ohm, 15V

Power - Max

274 W

Product Type

IGBT Transistors

Packaging

Tube

Series

TrenchStop? 5

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

274W

Input Type

Standard

Tradename

TRENCHSTOP ~ CoolSiC

Operating Temperature

-40°C ~ 175°C (TJ)

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 50A

Continuous Collector Current

80A

IGBT Type

Trench Field Stop

Gate Charge

110 nC

Current - Collector Pulsed (Icm)

200 A

Td (on/off) @ 25°C

20ns/140ns

Switching Energy

320μJ (on), 550μJ (off)

Product Category

IGBT Transistors

Infineon Technologies IKW75N60H3FKSA1

In stock

SKU: IKW75N60H3FKSA1-9
Manufacturer

Infineon Technologies

Max Power Dissipation

428W

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

400V, 75A, 5.2 Ω, 15V

Packaging

Tube

Published

2005

Operating Temperature

-40°C~175°C TJ

Series

TrenchStop®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Mount

Through Hole

Factory Lead Time

14 Weeks

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 75A

IGBT Type

Trench Field Stop

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

428W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Max Collector Current

80A

Reverse Recovery Time

190 ns

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Gate Charge

470nC

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

31ns/265ns

Switching Energy

3mJ (on), 1.7mJ (off)

Height

20.7mm

Length

15.87mm

Width

5.31mm

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IKW75N60TAFKSA1

In stock

SKU: IKW75N60TAFKSA1-9
Manufacturer

Infineon Technologies

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Package / Case

TO-247-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

80A

Number of Elements

1

Test Conditions

400V, 75A, 5 Ω, 15V

Packaging

Tube

Published

2014

Operating Temperature

-40°C~175°C TJ

Series

TrenchStop®

Pbfree Code

yes

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Factory Lead Time

14 Weeks

Turn On Time

69 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 75A

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

428W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

600V

Reverse Recovery Time

121ns

JESD-30 Code

R-PSFM-T3

Reference Standard

AEC-Q101

Turn Off Time-Nom (toff)

401 ns

IGBT Type

Trench Field Stop

Gate Charge

470nC

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

33ns/330ns

Switching Energy

4.5mJ

RoHS Status

ROHS3 Compliant

Configuration

SINGLE WITH BUILT-IN DIODE

Lead Free

Lead Free

Infineon Technologies IKW75N60TFKSA1

In stock

SKU: IKW75N60TFKSA1-9
Manufacturer

Infineon Technologies

Published

2006

Mounting Type

Through Hole

Package / Case

TO-247-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

80A

Number of Elements

1

Test Conditions

400V, 75A, 5 Ω, 15V

Operating Temperature

-40°C~175°C TJ

Terminal Position

SINGLE

Factory Lead Time

16 Weeks

Series

TrenchStop®

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Additional Feature

HIGH SWITCHING SPEED

Packaging

Tube

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reverse Recovery Time

121ns

JEDEC-95 Code

TO-247AD

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

428W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Pin Count

3

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

69 ns

Vce(on) (Max) @ Vge, Ic

2V @ 15V, 75A

Turn Off Time-Nom (toff)

401 ns

IGBT Type

Trench Field Stop

Gate Charge

470nC

Current - Collector Pulsed (Icm)

225A

Td (on/off) @ 25°C

33ns/330ns

Switching Energy

4.5mJ

RoHS Status

ROHS3 Compliant

Infineon Technologies IKW75N60TXK

In stock

SKU: IKW75N60TXK-9
Manufacturer

Infineon Technologies AG

Factory Lead Time

20 Weeks

Surface Mount

NO

Number of Terminals

3

Transistor Element Material

SILICON

Mfr

Infineon Technologies

Package

Bulk

Package Shape

RECTANGULAR

Product Status

Active

Additional Feature

HIGH SWITCHING SPEED

Terminal Position

SINGLE

Terminal Form

THROUGH-HOLE

Reach Compliance Code

compliant

JESD-30 Code

R-PSFM-T3

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-247AD

Collector Current-Max (IC)

80 A

Continuous Collector Current

80

Collector-Emitter Voltage-Max

600 V

Infineon Technologies IKW75N65EH5XKSA1

In stock

SKU: IKW75N65EH5XKSA1-9
Manufacturer

Infineon Technologies

Max Power Dissipation

395W

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 75A, 8 Ω, 15V

Packaging

Tube

Published

2008

Operating Temperature

-40°C~175°C TJ

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Mount

Through Hole

Factory Lead Time

26 Weeks

Reverse Recovery Time

92 ns

Turn On Time

61 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

395W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

90A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

232 ns

IGBT Type

Trench

Gate Charge

160nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

28ns/174ns

Switching Energy

2.3mJ (on), 900μJ (off)

RoHS Status

ROHS3 Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IKW75N65EL5XKSA1

In stock

SKU: IKW75N65EL5XKSA1-9
Manufacturer

Infineon Technologies

Operating Temperature

-40°C~175°C TJ

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

SwitchingFrequency

50Hz

Terminal Finish

Tin (Sn)

Test Conditions

400V, 75A, 4 Ω, 15V

Packaging

Tube

Published

2013

Series

TrenchStop™ 5

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Mount

Through Hole

Factory Lead Time

26 Weeks

Max Collector Current

80A

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Element Configuration

Single

Input Type

Standard

Power - Max

536W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Reverse Recovery Time

114 ns

Turn On Time

53 ns

Max Power Dissipation

536W

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 75A

Turn Off Time-Nom (toff)

474 ns

Gate Charge

436nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

40ns/275ns

Switching Energy

1.61mJ (on), 3.2mJ (off)

RoHS Status

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Lead Free

Lead Free

Infineon Technologies IKW75N65ES5XKSA1

In stock

SKU: IKW75N65ES5XKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 75A, 18 Ω, 15V

Max Power Dissipation

395W

Factory Lead Time

16 Weeks

Published

2006

Series

TrenchStop™

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Terminal Finish

Tin (Sn)

Operating Temperature

-40°C~175°C TJ

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Reverse Recovery Time

85 ns

Turn On Time

94 ns

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

395W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

80A

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Element Configuration

Single

Vce(on) (Max) @ Vge, Ic

1.75V @ 15V, 75A

Turn Off Time-Nom (toff)

233 ns

IGBT Type

Trench

Gate Charge

164nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

40ns/144ns

Switching Energy

2.4mJ (on), 950μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKW75N65ET7XKSA1

In stock

SKU: IKW75N65ET7XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

Base Product Number

IKW75N65

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

240

Test Conditions

400V, 75A, 4.7Ohm, 15V

Mounting Type

Through Hole

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Part # Aliases

IKW75N65ET7 SP005348294

Pd - Power Dissipation

333 W

Product Status

Active

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Tradename

TRENCHSTOP

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

1.65V @ 15V, 75A

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

333

Input Type

Standard

Power - Max

333 W

Product Type

IGBT Transistors

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Continuous Collector Current

80

IGBT Type

Trench Field Stop

Gate Charge

435 nC

Current - Collector Pulsed (Icm)

225 A

Td (on/off) @ 25°C

28ns/310ns

Switching Energy

2.17mJ (on), 1.23mJ (off)

Reverse Recovery Time (trr)

100 ns

Product Category

IGBT Transistors

Infineon Technologies IKW75N65RH5XKSA1

In stock

SKU: IKW75N65RH5XKSA1-9
Manufacturer

Infineon

Maximum Gate Emitter Voltage

15V

Package / Case

TO-247-3

Supplier Device Package

PG-TO247-3

Base Product Number

IKW75N65

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

240

Product Status

Active

Mounting Type

Through Hole

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

PG-TO247-3

Part # Aliases

IKW75N65RH5 SP004038154

Pd - Power Dissipation

395 W

Maximum Collector Emitter Voltage

650 V

Test Conditions

400V, 37.5A, 9Ohm, 15V

Power - Max

395 W

Product Type

IGBT Transistors

Packaging

Tube

Series

TrenchStop? 5

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

395W

Input Type

Standard

Tradename

TRENCHSTOP ~ CoolSiC

Operating Temperature

-55°C ~ 175°C (TJ)

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Continuous Collector Current

80A

IGBT Type

Trench Field Stop

Gate Charge

168 nC

Current - Collector Pulsed (Icm)

300 A

Td (on/off) @ 25°C

26ns/180ns

Switching Energy

360μJ (on), 300μJ (off)

Product Category

IGBT Transistors

Infineon Technologies IKWH20N65WR6XKSA1

In stock

SKU: IKWH20N65WR6XKSA1-9
Manufacturer

Infineon

Pd - Power Dissipation

136 W

Supplier Device Package

PG-TO247-3-32

Base Product Number

IKWH20N

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Continuous Collector Current Ic Max

20 A

Current-Collector (Ic) (Max)

55 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Factory Pack QuantityFactory Pack Quantity

240

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Package Type

TO-247-3-HCC

Part # Aliases

IKWH20N65WR6 SP005545963

Package / Case

TO-247-3

Mounting Type

Through Hole

Power - Max

136 W

Product Type

IGBT Transistors

Series

Trenchstop? 5

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

140W

Input Type

Standard

Operating Temperature

-40°C ~ 175°C (TJ)

Product Status

Active

Voltage - Collector Emitter Breakdown (Max)

650 V

Channel Type

N

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 20A

Continuous Collector Current

40A

IGBT Type

Trench Field Stop

Gate Charge

97 nC

Current - Collector Pulsed (Icm)

60 A

Packaging

Tube

Product Category

IGBT Transistors

Infineon Technologies IKWH30N65WR5XKSA1

In stock

SKU: IKWH30N65WR5XKSA1-9
Manufacturer

Infineon

Package

Tube

Package / Case

TO247-3-32

Base Product Number

IKWH30N

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Continuous Collector Current Ic Max

30 A

Factory Pack QuantityFactory Pack Quantity

240

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Mounting Type

Through Hole

Part # Aliases

IKWH30N65WR5 SP005430891

Package Type

TO-247-3-HCC

Pd - Power Dissipation

190 W

Product Status

Active

Packaging

Tube

Series

*

Subcategory

IGBTs

Technology

Si

Pin Count

3

Configuration

Single

Power Dissipation

190W

Product Type

IGBT Transistors

Channel Type

N

Continuous Collector Current

60A

Product Category

IGBT Transistors