Showing 769–780 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IKW50N65SS5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Gate Emitter Voltage |
15V |
Package / Case |
TO-247-3 |
Supplier Device Package |
PG-TO247-3 |
Base Product Number |
IKW50N65 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Product Status |
Active |
Mounting Type |
Through Hole |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Package Type |
PG-TO247-3 |
Part # Aliases |
IKW50N65SS5 SP001668430 |
Pd - Power Dissipation |
274 W |
Maximum Collector Emitter Voltage |
650 V |
Test Conditions |
400V, 50A, 9Ohm, 15V |
Power - Max |
274 W |
Product Type |
IGBT Transistors |
Packaging |
Tube |
Series |
TrenchStop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
274W |
Input Type |
Standard |
Tradename |
TRENCHSTOP ~ CoolSiC |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 50A |
Continuous Collector Current |
80A |
IGBT Type |
Trench Field Stop |
Gate Charge |
110 nC |
Current - Collector Pulsed (Icm) |
200 A |
Td (on/off) @ 25°C |
20ns/140ns |
Switching Energy |
320μJ (on), 550μJ (off) |
Product Category |
IGBT Transistors |
Infineon Technologies IKW75N60H3FKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Max Power Dissipation |
428W |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 5.2 Ω, 15V |
Packaging |
Tube |
Published |
2005 |
Operating Temperature |
-40°C~175°C TJ |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Mount |
Through Hole |
Factory Lead Time |
14 Weeks |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 75A |
IGBT Type |
Trench Field Stop |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
428W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Max Collector Current |
80A |
Reverse Recovery Time |
190 ns |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Gate Charge |
470nC |
Current - Collector Pulsed (Icm) |
225A |
Td (on/off) @ 25°C |
31ns/265ns |
Switching Energy |
3mJ (on), 1.7mJ (off) |
Height |
20.7mm |
Length |
15.87mm |
Width |
5.31mm |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Infineon Technologies IKW75N60TAFKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
80A |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 5 Ω, 15V |
Packaging |
Tube |
Published |
2014 |
Operating Temperature |
-40°C~175°C TJ |
Series |
TrenchStop® |
Pbfree Code |
yes |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Factory Lead Time |
14 Weeks |
Turn On Time |
69 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 75A |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
428W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
600V |
Reverse Recovery Time |
121ns |
JESD-30 Code |
R-PSFM-T3 |
Reference Standard |
AEC-Q101 |
Turn Off Time-Nom (toff) |
401 ns |
IGBT Type |
Trench Field Stop |
Gate Charge |
470nC |
Current - Collector Pulsed (Icm) |
225A |
Td (on/off) @ 25°C |
33ns/330ns |
Switching Energy |
4.5mJ |
RoHS Status |
ROHS3 Compliant |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Lead Free |
Lead Free |
Infineon Technologies IKW75N60TFKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2006 |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
80A |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 5 Ω, 15V |
Operating Temperature |
-40°C~175°C TJ |
Terminal Position |
SINGLE |
Factory Lead Time |
16 Weeks |
Series |
TrenchStop® |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Additional Feature |
HIGH SWITCHING SPEED |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
121ns |
JEDEC-95 Code |
TO-247AD |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
428W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Pin Count |
3 |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
69 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 75A |
Turn Off Time-Nom (toff) |
401 ns |
IGBT Type |
Trench Field Stop |
Gate Charge |
470nC |
Current - Collector Pulsed (Icm) |
225A |
Td (on/off) @ 25°C |
33ns/330ns |
Switching Energy |
4.5mJ |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKW75N60TXK
In stock
Manufacturer |
Infineon Technologies AG |
---|---|
Factory Lead Time |
20 Weeks |
Surface Mount |
NO |
Number of Terminals |
3 |
Transistor Element Material |
SILICON |
Mfr |
Infineon Technologies |
Package |
Bulk |
Package Shape |
RECTANGULAR |
Product Status |
Active |
Additional Feature |
HIGH SWITCHING SPEED |
Terminal Position |
SINGLE |
Terminal Form |
THROUGH-HOLE |
Reach Compliance Code |
compliant |
JESD-30 Code |
R-PSFM-T3 |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-247AD |
Collector Current-Max (IC) |
80 A |
Continuous Collector Current |
80 |
Collector-Emitter Voltage-Max |
600 V |
Infineon Technologies IKW75N65EH5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Max Power Dissipation |
395W |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 8 Ω, 15V |
Packaging |
Tube |
Published |
2008 |
Operating Temperature |
-40°C~175°C TJ |
Series |
TrenchStop™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Mount |
Through Hole |
Factory Lead Time |
26 Weeks |
Reverse Recovery Time |
92 ns |
Turn On Time |
61 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
395W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
90A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) |
232 ns |
IGBT Type |
Trench |
Gate Charge |
160nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
28ns/174ns |
Switching Energy |
2.3mJ (on), 900μJ (off) |
RoHS Status |
ROHS3 Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Infineon Technologies IKW75N65EL5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Operating Temperature |
-40°C~175°C TJ |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
SwitchingFrequency |
50Hz |
Terminal Finish |
Tin (Sn) |
Test Conditions |
400V, 75A, 4 Ω, 15V |
Packaging |
Tube |
Published |
2013 |
Series |
TrenchStop™ 5 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Mount |
Through Hole |
Factory Lead Time |
26 Weeks |
Max Collector Current |
80A |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
536W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Reverse Recovery Time |
114 ns |
Turn On Time |
53 ns |
Max Power Dissipation |
536W |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 75A |
Turn Off Time-Nom (toff) |
474 ns |
Gate Charge |
436nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
40ns/275ns |
Switching Energy |
1.61mJ (on), 3.2mJ (off) |
RoHS Status |
ROHS3 Compliant |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Lead Free |
Lead Free |
Infineon Technologies IKW75N65ES5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Test Conditions |
400V, 75A, 18 Ω, 15V |
Max Power Dissipation |
395W |
Factory Lead Time |
16 Weeks |
Published |
2006 |
Series |
TrenchStop™ |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Terminal Finish |
Tin (Sn) |
Operating Temperature |
-40°C~175°C TJ |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Reverse Recovery Time |
85 ns |
Turn On Time |
94 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
395W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
80A |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Element Configuration |
Single |
Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 75A |
Turn Off Time-Nom (toff) |
233 ns |
IGBT Type |
Trench |
Gate Charge |
164nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
40ns/144ns |
Switching Energy |
2.4mJ (on), 950μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKW75N65ET7XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Package / Case |
TO-247-3 |
Supplier Device Package |
PG-TO247-3 |
Base Product Number |
IKW75N65 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Test Conditions |
400V, 75A, 4.7Ohm, 15V |
Mounting Type |
Through Hole |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Part # Aliases |
IKW75N65ET7 SP005348294 |
Pd - Power Dissipation |
333 W |
Product Status |
Active |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Tradename |
TRENCHSTOP |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Vce(on) (Max) @ Vge, Ic |
1.65V @ 15V, 75A |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
333 |
Input Type |
Standard |
Power - Max |
333 W |
Product Type |
IGBT Transistors |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Tube |
Continuous Collector Current |
80 |
IGBT Type |
Trench Field Stop |
Gate Charge |
435 nC |
Current - Collector Pulsed (Icm) |
225 A |
Td (on/off) @ 25°C |
28ns/310ns |
Switching Energy |
2.17mJ (on), 1.23mJ (off) |
Reverse Recovery Time (trr) |
100 ns |
Product Category |
IGBT Transistors |
Infineon Technologies IKW75N65RH5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Gate Emitter Voltage |
15V |
Package / Case |
TO-247-3 |
Supplier Device Package |
PG-TO247-3 |
Base Product Number |
IKW75N65 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Product Status |
Active |
Mounting Type |
Through Hole |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Package Type |
PG-TO247-3 |
Part # Aliases |
IKW75N65RH5 SP004038154 |
Pd - Power Dissipation |
395 W |
Maximum Collector Emitter Voltage |
650 V |
Test Conditions |
400V, 37.5A, 9Ohm, 15V |
Power - Max |
395 W |
Product Type |
IGBT Transistors |
Packaging |
Tube |
Series |
TrenchStop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
395W |
Input Type |
Standard |
Tradename |
TRENCHSTOP ~ CoolSiC |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Continuous Collector Current |
80A |
IGBT Type |
Trench Field Stop |
Gate Charge |
168 nC |
Current - Collector Pulsed (Icm) |
300 A |
Td (on/off) @ 25°C |
26ns/180ns |
Switching Energy |
360μJ (on), 300μJ (off) |
Product Category |
IGBT Transistors |
Infineon Technologies IKWH20N65WR6XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Pd - Power Dissipation |
136 W |
Supplier Device Package |
PG-TO247-3-32 |
Base Product Number |
IKWH20N |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Continuous Collector Current Ic Max |
20 A |
Current-Collector (Ic) (Max) |
55 A |
Maximum Collector Emitter Voltage |
650 V |
Maximum Gate Emitter Voltage |
±20V |
Factory Pack QuantityFactory Pack Quantity |
240 |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Package Type |
TO-247-3-HCC |
Part # Aliases |
IKWH20N65WR6 SP005545963 |
Package / Case |
TO-247-3 |
Mounting Type |
Through Hole |
Power - Max |
136 W |
Product Type |
IGBT Transistors |
Series |
Trenchstop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Pin Count |
3 |
Configuration |
Single |
Power Dissipation |
140W |
Input Type |
Standard |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Product Status |
Active |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Channel Type |
N |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 20A |
Continuous Collector Current |
40A |
IGBT Type |
Trench Field Stop |
Gate Charge |
97 nC |
Current - Collector Pulsed (Icm) |
60 A |
Packaging |
Tube |
Product Category |
IGBT Transistors |
Infineon Technologies IKWH30N65WR5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Package |
Tube |
Package / Case |
TO247-3-32 |
Base Product Number |
IKWH30N |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Continuous Collector Current Ic Max |
30 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Maximum Collector Emitter Voltage |
650 V |
Maximum Gate Emitter Voltage |
±20V |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Mounting Type |
Through Hole |
Part # Aliases |
IKWH30N65WR5 SP005430891 |
Package Type |
TO-247-3-HCC |
Pd - Power Dissipation |
190 W |
Product Status |
Active |
Packaging |
Tube |
Series |
* |
Subcategory |
IGBTs |
Technology |
Si |
Pin Count |
3 |
Configuration |
Single |
Power Dissipation |
190W |
Product Type |
IGBT Transistors |
Channel Type |
N |
Continuous Collector Current |
60A |
Product Category |
IGBT Transistors |