Showing 781–792 of 3680 results
Infineon Technologies IKWH30N65WR6XKSA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Pd - Power Dissipation |
136 W |
| Supplier Device Package |
PG-TO247-3-32 |
| Base Product Number |
IKWH30N |
| Brand |
Infineon Technologies |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
30 A |
| Current-Collector (Ic) (Max) |
67 A |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Gate Emitter Voltage |
±20V |
| Factory Pack QuantityFactory Pack Quantity |
240 |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Infineon Technologies |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247-3-HCC |
| Part # Aliases |
IKWH30N65WR6 SP005430886 |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Power - Max |
136 W |
| Product Type |
IGBT Transistors |
| Series |
Trenchstop? 5 |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
165W |
| Input Type |
Standard |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Product Status |
Active |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Vce(on) (Max) @ Vge, Ic |
1.75V @ 15V, 30A |
| Continuous Collector Current |
60A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
97 nC |
| Current - Collector Pulsed (Icm) |
90 A |
| Packaging |
Tube |
| Product Category |
IGBT Transistors |
Infineon Technologies IKWH40N65WR6XKSA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Test Conditions |
400V, 40A, 27Ohm, 15V |
| Supplier Device Package |
PG-TO247-3-32 |
| Base Product Number |
IKWH40N |
| Brand |
Infineon Technologies |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
20 A |
| Current-Collector (Ic) (Max) |
75 A |
| Factory Pack QuantityFactory Pack Quantity |
240 |
| Maximum Gate Emitter Voltage |
±20V |
| Maximum Operating Temperature |
+ 175 C |
| Maximum Collector Emitter Voltage |
650 V |
| Mfr |
Infineon Technologies |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Package |
Tube |
| Package Type |
TO-247-3-HCC |
| Part # Aliases |
IKWH40N65WR6 SP005542785 |
| Pd - Power Dissipation |
175 W |
| Product Status |
Active |
| Package / Case |
TO-247-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
650 V |
| Channel Type |
N |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
175W |
| Input Type |
Standard |
| Power - Max |
175 W |
| Product Type |
IGBT Transistors |
| Packaging |
Tube |
| Operating Temperature |
-40°C ~ 175°C (TJ) |
| Vce(on) (Max) @ Vge, Ic |
1.85V @ 15V, 40A |
| Continuous Collector Current |
75A |
| IGBT Type |
Trench |
| Gate Charge |
117 nC |
| Current - Collector Pulsed (Icm) |
120 A |
| Td (on/off) @ 25°C |
37ns/353ns |
| Switching Energy |
1.09mJ (on), 570μJ (off) |
| Reverse Recovery Time (trr) |
79 ns |
| Series |
TrenchStop? 5 WR6 |
| Product Category |
IGBT Transistors |
Infineon Technologies IKWH50N65WR6XKSA1
In stock
| Manufacturer |
650 V |
|---|---|
| Package |
TO-247-3-HCC |
| Package / Case |
TO247-3-32 |
| Base Product Number |
Infineon Technologies |
| Brand |
650 V |
| Collector- Emitter Voltage VCEO Max |
20 A |
| Current-Collector (Ic) (Max) |
240 |
| Factory Pack QuantityFactory Pack Quantity |
Infineon |
| Maximum Collector Emitter Voltage |
±20V |
| Maximum Gate Emitter Voltage |
+ 175 C |
| Maximum Operating Temperature |
Infineon Technologies |
| Mfr |
– 40 C |
| Minimum Operating Temperature |
Through Hole |
| MSL |
Tube |
| Mounting Type |
Through Hole |
| Part # Aliases |
205 W |
| Package Type |
IKWH50N65WR6 SP005542787 |
| Pd - Power Dissipation |
Active |
| Product Status |
Details |
| Operating Temperature |
Tube |
| Packaging |
* |
| Series |
IGBTs |
| Subcategory |
Si |
| Technology |
3 |
| Pin Count |
Single |
| Configuration |
205W |
| Power - Max |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
N |
| Vce(on) (Max) @ Vge, Ic |
85A |
| Reverse Recovery Time (trr) |
IGBT Transistors |
Infineon Technologies IKWH60N65WR6XKSA1
In stock
| Manufacturer |
650 V |
|---|---|
| Package |
TO-247-3-HCC |
| Package / Case |
TO247-3-32 |
| Base Product Number |
Infineon Technologies |
| Brand |
650 V |
| Collector- Emitter Voltage VCEO Max |
20 A |
| Current-Collector (Ic) (Max) |
240 |
| Factory Pack QuantityFactory Pack Quantity |
Infineon |
| Maximum Collector Emitter Voltage |
±20V |
| Maximum Gate Emitter Voltage |
+ 175 C |
| Maximum Operating Temperature |
Infineon Technologies |
| Mfr |
– 40 C |
| Minimum Operating Temperature |
Through Hole |
| MSL |
Tube |
| Mounting Type |
Through Hole |
| Part # Aliases |
240 W |
| Package Type |
IKWH60N65WR6 SP005430894 |
| Pd - Power Dissipation |
Active |
| Product Status |
Details |
| Operating Temperature |
Tube |
| Packaging |
* |
| Series |
IGBTs |
| Subcategory |
Si |
| Technology |
3 |
| Pin Count |
Single |
| Configuration |
240W |
| Power - Max |
IGBT Transistors |
| Voltage - Collector Emitter Breakdown (Max) |
N |
| Vce(on) (Max) @ Vge, Ic |
100A |
| Reverse Recovery Time (trr) |
IGBT Transistors |
Infineon Technologies IKWH70N65WR6XKSA1
In stock
| Manufacturer |
Infineon |
|---|---|
| Package |
Tube |
| Package / Case |
TO247-3-32 |
| Base Product Number |
IKWH70N |
| Brand |
Infineon Technologies |
| Collector- Emitter Voltage VCEO Max |
650 V |
| Continuous Collector Current Ic Max |
20 A |
| Factory Pack QuantityFactory Pack Quantity |
240 |
| Maximum Collector Emitter Voltage |
650 V |
| Maximum Gate Emitter Voltage |
±20V |
| Maximum Operating Temperature |
+ 175 C |
| Mfr |
Infineon Technologies |
| Minimum Operating Temperature |
– 40 C |
| Mounting Styles |
Through Hole |
| Mounting Type |
Through Hole |
| Part # Aliases |
IKWH70N65WR6 SP005430896 |
| Package Type |
TO-247-3-HCC |
| Pd - Power Dissipation |
290 W |
| Product Status |
Active |
| Packaging |
Tube |
| Series |
* |
| Subcategory |
IGBTs |
| Technology |
Si |
| Pin Count |
3 |
| Configuration |
Single |
| Power Dissipation |
290 |
| Product Type |
IGBT Transistors |
| Channel Type |
N |
| Continuous Collector Current |
122 |
| Product Category |
IGBT Transistors |
Infineon Technologies IKY40N120CH3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Terminal Position |
SINGLE |
| Package / Case |
TO-247-4 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
80A |
| Number of Elements |
1 |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Test Conditions |
600V, 40A, 12 Ω, 15V |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Terminal Finish |
Tin (Sn) |
| Mounting Type |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
61 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
500W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
350ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 40A |
| Turn Off Time-Nom (toff) |
439 ns |
| Gate Charge |
190nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
30ns/280ns |
| Switching Energy |
2.18mJ (on), 1.3mJ (off) |
| JESD-30 Code |
R-PSFM-T4 |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKY40N120CS6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Current-Collector (Ic) (Max) |
80A |
| Test Conditions |
600V, 40A, 9 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Series |
TrenchStop™ |
| Part Status |
Active |
| Factory Lead Time |
14 Weeks |
| Power - Max |
500W |
| Input Type |
Standard |
| Reverse Recovery Time |
255ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 40A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
285nC |
| Current - Collector Pulsed (Icm) |
160A |
| Td (on/off) @ 25°C |
27ns/315ns |
| Switching Energy |
1.45mJ (on), 1.55mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKY50N120CH3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
100A |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
14 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Test Conditions |
600V, 50A, 10 Ω, 15V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Turn On Time |
62 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
652W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
255ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T4 |
| Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
462 ns |
| Gate Charge |
235nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
32ns/296ns |
| Switching Energy |
2.3mJ (on), 1.9mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKY75N120CH3XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
150A |
| Number of Elements |
1 |
| Terminal Finish |
Tin (Sn) |
| Factory Lead Time |
16 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| JESD-609 Code |
e3 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Test Conditions |
600V, 75A, 6 Ω, 15V |
| Terminal Position |
SINGLE |
| Reverse Recovery Time |
292ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| JESD-30 Code |
R-PSFM-T4 |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
938W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn On Time |
73 ns |
| Vce(on) (Max) @ Vge, Ic |
2.35V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
468 ns |
| Gate Charge |
370nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
38ns/303ns |
| Switching Energy |
3.4mJ (on), 2.9mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKY75N120CS6XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Current-Collector (Ic) (Max) |
150A |
| Test Conditions |
600V, 75A, 4 Ω, 15V |
| Operating Temperature |
-40°C~175°C TJ |
| Packaging |
Tube |
| Series |
TrenchStop™ |
| Part Status |
Active |
| Factory Lead Time |
16 Weeks |
| Power - Max |
880W |
| Input Type |
Standard |
| Reverse Recovery Time |
205ns |
| Voltage - Collector Emitter Breakdown (Max) |
1200V |
| Vce(on) (Max) @ Vge, Ic |
2.15V @ 15V, 75A |
| IGBT Type |
Trench Field Stop |
| Gate Charge |
530nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
32ns/300ns |
| Switching Energy |
2.2mJ (on), 2.95mJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKZ50N65ES5XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-40°C~175°C TJ |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
80A |
| Number of Elements |
1 |
| Terminal Position |
SINGLE |
| Factory Lead Time |
26 Weeks |
| Packaging |
Tube |
| Published |
2014 |
| Series |
TrenchStop™ 5 |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
Not Applicable |
| Number of Terminations |
4 |
| ECCN Code |
EAR99 |
| Test Conditions |
400V, 25A, 23.1 Ω, 15V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Voltage - Collector Emitter Breakdown (Max) |
650V |
| Turn On Time |
60 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Input Type |
Standard |
| Power - Max |
274W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Reverse Recovery Time |
62ns |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| JESD-30 Code |
R-PSFM-T4 |
| Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 50A |
| Turn Off Time-Nom (toff) |
366 ns |
| IGBT Type |
Trench |
| Gate Charge |
120nC |
| Current - Collector Pulsed (Icm) |
200A |
| Td (on/off) @ 25°C |
36ns/294ns |
| Switching Energy |
770μJ (on), 880μJ (off) |
| RoHS Status |
ROHS3 Compliant |
Infineon Technologies IKZ75N65EH5XKSA1
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-247-4 |
| Number of Pins |
4 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
650V |
| Number of Elements |
1 |
| Test Conditions |
400V, 37.5A, 10 Ω, 15V |
| Max Power Dissipation |
395W |
| Factory Lead Time |
26 Weeks |
| Published |
2008 |
| Series |
TrenchStop™ 5 |
| JESD-609 Code |
e3 |
| Pbfree Code |
yes |
| Part Status |
Active |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
4 |
| Terminal Finish |
Tin (Sn) |
| Operating Temperature |
-40°C~175°C TJ |
| Terminal Position |
SINGLE |
| Max Collector Current |
90A |
| Reverse Recovery Time |
58 ns |
| Configuration |
SINGLE WITH BUILT-IN DIODE |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
395W |
| Transistor Application |
POWER CONTROL |
| Halogen Free |
Halogen Free |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
650V |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Turn On Time |
37 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
| Turn Off Time-Nom (toff) |
415 ns |
| Gate Charge |
166nC |
| Current - Collector Pulsed (Icm) |
300A |
| Td (on/off) @ 25°C |
26ns/347ns |
| Switching Energy |
680μJ (on), 430μJ (off) |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |