Showing 793–804 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IKZ75N65EL5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Package / Case |
TO-247-4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
SwitchingFrequency |
50Hz |
Test Conditions |
400V, 75A, 23 Ω, 15V |
Terminal Position |
SINGLE |
Factory Lead Time |
16 Weeks |
Published |
2013 |
Series |
TrenchStop™ 5 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Active |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
Terminal Finish |
Tin (Sn) |
Max Power Dissipation |
536W |
Operating Temperature |
-40°C~175°C TJ |
Terminal Form |
THROUGH-HOLE |
Collector Emitter Voltage (VCEO) |
650V |
Max Collector Current |
100A |
JESD-30 Code |
R-PSFM-T4 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
536W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Reverse Recovery Time |
59 ns |
Turn On Time |
133 ns |
Vce(on) (Max) @ Vge, Ic |
1.35V @ 15V, 75A |
Turn Off Time-Nom (toff) |
474 ns |
Gate Charge |
436nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
120ns/275ns |
Switching Energy |
1.57mJ (on), 3.2mJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKZ75N65NH5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-247-4 |
Number of Pins |
4 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
650V |
Number of Elements |
1 |
Test Conditions |
400V, 37.5A, 27 Ω, 15V |
Max Power Dissipation |
395W |
Factory Lead Time |
14 Weeks |
Published |
2008 |
Series |
TrenchStop™ 5 |
JESD-609 Code |
e3 |
Pbfree Code |
yes |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
4 |
ECCN Code |
EAR99 |
Terminal Finish |
Tin (Sn) |
Operating Temperature |
-40°C~175°C TJ |
Terminal Position |
SINGLE |
Max Collector Current |
90A |
Reverse Recovery Time |
59 ns |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
395W |
Transistor Application |
POWER CONTROL |
Halogen Free |
Halogen Free |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
650V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Turn On Time |
71 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Turn Off Time-Nom (toff) |
485 ns |
IGBT Type |
Trench |
Gate Charge |
166nC |
Current - Collector Pulsed (Icm) |
300A |
Td (on/off) @ 25°C |
52ns/412ns |
Switching Energy |
880μJ (on), 520μJ (off) |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IKZA40N65RH5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Package / Case |
TO-247-4 |
Supplier Device Package |
PG-TO247-4-3 |
Base Product Number |
IKZA40 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
74 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Test Conditions |
400V, 20A, 15Ohm, 15V |
Mounting Type |
Through Hole |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Part # Aliases |
IKZA40N65RH5 SP004038198 |
Pd - Power Dissipation |
250 W |
Product Status |
Active |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Tradename |
TRENCHSTOP ~ CoolSiC |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Series |
TrenchStop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
250 |
Input Type |
Standard |
Power - Max |
250 W |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Tube |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 40A |
Continuous Collector Current |
74 |
IGBT Type |
Trench Field Stop |
Gate Charge |
95 nC |
Current - Collector Pulsed (Icm) |
60 A |
Td (on/off) @ 25°C |
17ns/165ns |
Switching Energy |
140μJ (on), 120μJ (off) |
Product Category |
IGBT Transistors |
Infineon Technologies IKZA50N65RH5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Package / Case |
TO-247-4 |
Supplier Device Package |
PG-TO247-4-3 |
Base Product Number |
IKZA50 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Test Conditions |
400V, 25A, 12Ohm, 15V |
Mounting Type |
Through Hole |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Part # Aliases |
IKZA50N65RH5 SP004038204 |
Pd - Power Dissipation |
305 W |
Product Status |
Active |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Tradename |
TRENCHSTOP ~ CoolSiC |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Series |
TrenchStop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
305 |
Input Type |
Standard |
Power - Max |
305 W |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Tube |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 50A |
Continuous Collector Current |
80 |
IGBT Type |
Trench Field Stop |
Gate Charge |
120 nC |
Current - Collector Pulsed (Icm) |
200 A |
Td (on/off) @ 25°C |
21ns/180ns |
Switching Energy |
200μJ (on), 180μJ (off) |
Product Category |
IGBT Transistors |
Infineon Technologies IKZA50N65SS5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Package / Case |
TO-247-4 |
Supplier Device Package |
PG-TO247-4-3 |
Base Product Number |
IKZA50 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Test Conditions |
400V, 50A, 9Ohm, 15V |
Mounting Type |
Through Hole |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Part # Aliases |
IKZA50N65SS5 SP004038212 |
Pd - Power Dissipation |
274 W |
Product Status |
Active |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Tradename |
TRENCHSTOP ~ CoolSiC |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Series |
TrenchStop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
274 |
Input Type |
Standard |
Power - Max |
274 W |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Tube |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 50A |
Continuous Collector Current |
80 |
IGBT Type |
Trench Field Stop |
Gate Charge |
110 nC |
Current - Collector Pulsed (Icm) |
200 A |
Td (on/off) @ 25°C |
19ns/140ns |
Switching Energy |
230μJ (on), 520μJ (off) |
Product Category |
IGBT Transistors |
Infineon Technologies IKZA75N65RH5XKSA1
In stock
Manufacturer |
Infineon |
---|---|
Maximum Operating Temperature |
+ 175 C |
Package / Case |
TO-247-4 |
Supplier Device Package |
PG-TO247-4-3 |
Base Product Number |
IKZA75 |
Brand |
Infineon Technologies |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Factory Pack QuantityFactory Pack Quantity |
240 |
Test Conditions |
400V, 37.5A, 9Ohm, 15V |
Mounting Type |
Through Hole |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Part # Aliases |
IKZA75N65RH5 SP004038216 |
Pd - Power Dissipation |
395 W |
Product Status |
Active |
Maximum Gate Emitter Voltage |
– 20 V, + 20 V |
Tradename |
TRENCHSTOP ~ CoolSiC |
Product Type |
IGBT Transistors |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Series |
TrenchStop? 5 |
Subcategory |
IGBTs |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
395 |
Input Type |
Standard |
Power - Max |
395 W |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Packaging |
Tube |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 75A |
Continuous Collector Current |
80 |
IGBT Type |
Trench Field Stop |
Gate Charge |
168 nC |
Current - Collector Pulsed (Icm) |
300 A |
Td (on/off) @ 25°C |
25ns/180ns |
Switching Energy |
310μJ (on), 300μJ (off) |
Product Category |
IGBT Transistors |
Infineon Technologies IKZA75N65SS5XKSA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-247-4 |
Supplier Device Package |
PG-TO247-4-3 |
Base Product Number |
IKZA75 |
Collector- Emitter Voltage VCEO Max |
650 V |
Current-Collector (Ic) (Max) |
80 A |
Maximum Gate Emitter Voltage |
– 20 V, 20 V |
Maximum Operating Temperature |
+ 175 C |
Mfr |
Infineon Technologies |
Minimum Operating Temperature |
– 40 C |
Mounting Styles |
Through Hole |
Package |
Tube |
Pd - Power Dissipation |
395 W |
Product Status |
Active |
Test Conditions |
400V, 75A, 5.6Ohm, 15V |
Operating Temperature |
-40°C ~ 175°C (TJ) |
Series |
TrenchStop? 5 |
Technology |
Si |
Configuration |
Single |
Power Dissipation |
395 |
Input Type |
Standard |
Power - Max |
395 W |
Voltage - Collector Emitter Breakdown (Max) |
650 V |
Vce(on) (Max) @ Vge, Ic |
1.7V @ 15V, 75A |
Continuous Collector Current |
80 |
IGBT Type |
Trench Field Stop |
Gate Charge |
164 nC |
Current - Collector Pulsed (Icm) |
300 A |
Td (on/off) @ 25°C |
22ns/145ns |
Switching Energy |
240μJ (on), 750μJ (off) |
Infineon Technologies ILB03N60
In stock
Manufacturer |
Rochester Electronics LLC |
---|---|
Terminal Position |
SINGLE |
Number of Terminals |
2 |
Transistor Element Material |
SILICON |
Mfr |
Infineon Technologies |
Package |
Bulk |
Package Shape |
RECTANGULAR |
Product Status |
Active |
JESD-609 Code |
e0 |
Pbfree Code |
No |
Terminal Finish |
TIN LEAD |
Additional Feature |
AVALANCHE RATED |
Surface Mount |
YES |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Terminal Form |
GULL WING |
Reach Compliance Code |
unknown |
Pin Count |
4 |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
COMMERCIAL |
Number of Elements |
1 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-263AB |
Collector Current-Max (IC) |
4.5 A |
Collector-Emitter Voltage-Max |
600 V |
Infineon Technologies IRG4BAC50W-S
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-273AA |
Current-Collector (Ic) (Max) |
55A |
Packaging |
Tube |
Published |
2007 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Type |
Standard |
Power - Max |
200W |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 27A |
Td (on/off) @ 25°C |
46ns/120ns |
Switching Energy |
80μJ (on), 320μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BAC50W-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-273AA |
Current-Collector (Ic) (Max) |
55A |
Packaging |
Tube |
Published |
2017 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Type |
Standard |
Power - Max |
200W |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 27A |
Infineon Technologies IRG4BC10K
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
9A |
Number of Elements |
1 |
Test Conditions |
480V, 5A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
Mounting Type |
Through Hole |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Packaging |
Tube |
Qualification Status |
Not Qualified |
Turn On Time |
78 ns |
Vce(on) (Max) @ Vge, Ic |
2.62V @ 15V, 5A |
Input Type |
Standard |
Power - Max |
38W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
38W |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Turn Off Time-Nom (toff) |
410 ns |
Gate Charge |
19nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
11ns/51ns |
Switching Energy |
160μJ (on), 100μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
210ns |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC10KDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 5A, 100 Ω, 15V |
Turn Off Delay Time |
100 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
38W |
Factory Lead Time |
16 Weeks |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Current Rating |
9A |
Element Configuration |
Single |
Packaging |
Tube |
Case Connection |
COLLECTOR |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
49ns/97ns |
Transistor Application |
MOTOR CONTROL |
Rise Time |
32ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.62V |
Max Collector Current |
9A |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
78 ns |
Vce(on) (Max) @ Vge, Ic |
2.62V @ 15V, 5A |
Turn Off Time-Nom (toff) |
410 ns |
Gate Charge |
19nC |
Input Type |
Standard |
Turn On Delay Time |
46 ns |
Switching Energy |
250μJ (on), 140μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6.5V |
Fall Time-Max (tf) |
210ns |
Height |
8.77mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead, Lead Free |