Transistors - IGBTs - Single

Infineon Technologies IKZ75N65EL5XKSA1

In stock

SKU: IKZ75N65EL5XKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Surface Mount

Mounting Type

Surface Mount

Package / Case

TO-247-4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

SwitchingFrequency

50Hz

Test Conditions

400V, 75A, 23 Ω, 15V

Terminal Position

SINGLE

Factory Lead Time

16 Weeks

Published

2013

Series

TrenchStop™ 5

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Active

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

Terminal Finish

Tin (Sn)

Max Power Dissipation

536W

Operating Temperature

-40°C~175°C TJ

Terminal Form

THROUGH-HOLE

Collector Emitter Voltage (VCEO)

650V

Max Collector Current

100A

JESD-30 Code

R-PSFM-T4

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

536W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Reverse Recovery Time

59 ns

Turn On Time

133 ns

Vce(on) (Max) @ Vge, Ic

1.35V @ 15V, 75A

Turn Off Time-Nom (toff)

474 ns

Gate Charge

436nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

120ns/275ns

Switching Energy

1.57mJ (on), 3.2mJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKZ75N65NH5XKSA1

In stock

SKU: IKZ75N65NH5XKSA1-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-247-4

Number of Pins

4

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

650V

Number of Elements

1

Test Conditions

400V, 37.5A, 27 Ω, 15V

Max Power Dissipation

395W

Factory Lead Time

14 Weeks

Published

2008

Series

TrenchStop™ 5

JESD-609 Code

e3

Pbfree Code

yes

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

4

ECCN Code

EAR99

Terminal Finish

Tin (Sn)

Operating Temperature

-40°C~175°C TJ

Terminal Position

SINGLE

Max Collector Current

90A

Reverse Recovery Time

59 ns

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

395W

Transistor Application

POWER CONTROL

Halogen Free

Halogen Free

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

650V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Turn On Time

71 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Turn Off Time-Nom (toff)

485 ns

IGBT Type

Trench

Gate Charge

166nC

Current - Collector Pulsed (Icm)

300A

Td (on/off) @ 25°C

52ns/412ns

Switching Energy

880μJ (on), 520μJ (off)

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IKZA40N65RH5XKSA1

In stock

SKU: IKZA40N65RH5XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4-3

Base Product Number

IKZA40

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

74 A

Factory Pack QuantityFactory Pack Quantity

240

Test Conditions

400V, 20A, 15Ohm, 15V

Mounting Type

Through Hole

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Part # Aliases

IKZA40N65RH5 SP004038198

Pd - Power Dissipation

250 W

Product Status

Active

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Tradename

TRENCHSTOP ~ CoolSiC

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Series

TrenchStop? 5

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

250

Input Type

Standard

Power - Max

250 W

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 40A

Continuous Collector Current

74

IGBT Type

Trench Field Stop

Gate Charge

95 nC

Current - Collector Pulsed (Icm)

60 A

Td (on/off) @ 25°C

17ns/165ns

Switching Energy

140μJ (on), 120μJ (off)

Product Category

IGBT Transistors

Infineon Technologies IKZA50N65RH5XKSA1

In stock

SKU: IKZA50N65RH5XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4-3

Base Product Number

IKZA50

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

240

Test Conditions

400V, 25A, 12Ohm, 15V

Mounting Type

Through Hole

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Part # Aliases

IKZA50N65RH5 SP004038204

Pd - Power Dissipation

305 W

Product Status

Active

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Tradename

TRENCHSTOP ~ CoolSiC

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Series

TrenchStop? 5

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

305

Input Type

Standard

Power - Max

305 W

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 50A

Continuous Collector Current

80

IGBT Type

Trench Field Stop

Gate Charge

120 nC

Current - Collector Pulsed (Icm)

200 A

Td (on/off) @ 25°C

21ns/180ns

Switching Energy

200μJ (on), 180μJ (off)

Product Category

IGBT Transistors

Infineon Technologies IKZA50N65SS5XKSA1

In stock

SKU: IKZA50N65SS5XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4-3

Base Product Number

IKZA50

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

240

Test Conditions

400V, 50A, 9Ohm, 15V

Mounting Type

Through Hole

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Part # Aliases

IKZA50N65SS5 SP004038212

Pd - Power Dissipation

274 W

Product Status

Active

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Tradename

TRENCHSTOP ~ CoolSiC

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Series

TrenchStop? 5

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

274

Input Type

Standard

Power - Max

274 W

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 50A

Continuous Collector Current

80

IGBT Type

Trench Field Stop

Gate Charge

110 nC

Current - Collector Pulsed (Icm)

200 A

Td (on/off) @ 25°C

19ns/140ns

Switching Energy

230μJ (on), 520μJ (off)

Product Category

IGBT Transistors

Infineon Technologies IKZA75N65RH5XKSA1

In stock

SKU: IKZA75N65RH5XKSA1-9
Manufacturer

Infineon

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4-3

Base Product Number

IKZA75

Brand

Infineon Technologies

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Factory Pack QuantityFactory Pack Quantity

240

Test Conditions

400V, 37.5A, 9Ohm, 15V

Mounting Type

Through Hole

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Part # Aliases

IKZA75N65RH5 SP004038216

Pd - Power Dissipation

395 W

Product Status

Active

Maximum Gate Emitter Voltage

– 20 V, + 20 V

Tradename

TRENCHSTOP ~ CoolSiC

Product Type

IGBT Transistors

Voltage - Collector Emitter Breakdown (Max)

650 V

Series

TrenchStop? 5

Subcategory

IGBTs

Technology

Si

Configuration

Single

Power Dissipation

395

Input Type

Standard

Power - Max

395 W

Operating Temperature

-40°C ~ 175°C (TJ)

Packaging

Tube

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 75A

Continuous Collector Current

80

IGBT Type

Trench Field Stop

Gate Charge

168 nC

Current - Collector Pulsed (Icm)

300 A

Td (on/off) @ 25°C

25ns/180ns

Switching Energy

310μJ (on), 300μJ (off)

Product Category

IGBT Transistors

Infineon Technologies IKZA75N65SS5XKSA1

In stock

SKU: IKZA75N65SS5XKSA1-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-247-4

Supplier Device Package

PG-TO247-4-3

Base Product Number

IKZA75

Collector- Emitter Voltage VCEO Max

650 V

Current-Collector (Ic) (Max)

80 A

Maximum Gate Emitter Voltage

– 20 V, 20 V

Maximum Operating Temperature

+ 175 C

Mfr

Infineon Technologies

Minimum Operating Temperature

– 40 C

Mounting Styles

Through Hole

Package

Tube

Pd - Power Dissipation

395 W

Product Status

Active

Test Conditions

400V, 75A, 5.6Ohm, 15V

Operating Temperature

-40°C ~ 175°C (TJ)

Series

TrenchStop? 5

Technology

Si

Configuration

Single

Power Dissipation

395

Input Type

Standard

Power - Max

395 W

Voltage - Collector Emitter Breakdown (Max)

650 V

Vce(on) (Max) @ Vge, Ic

1.7V @ 15V, 75A

Continuous Collector Current

80

IGBT Type

Trench Field Stop

Gate Charge

164 nC

Current - Collector Pulsed (Icm)

300 A

Td (on/off) @ 25°C

22ns/145ns

Switching Energy

240μJ (on), 750μJ (off)

Infineon Technologies ILB03N60

In stock

SKU: ILB03N60-9
Manufacturer

Rochester Electronics LLC

Terminal Position

SINGLE

Number of Terminals

2

Transistor Element Material

SILICON

Mfr

Infineon Technologies

Package

Bulk

Package Shape

RECTANGULAR

Product Status

Active

JESD-609 Code

e0

Pbfree Code

No

Terminal Finish

TIN LEAD

Additional Feature

AVALANCHE RATED

Surface Mount

YES

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Terminal Form

GULL WING

Reach Compliance Code

unknown

Pin Count

4

JESD-30 Code

R-PSSO-G2

Qualification Status

COMMERCIAL

Number of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-263AB

Collector Current-Max (IC)

4.5 A

Collector-Emitter Voltage-Max

600 V

Infineon Technologies IRG4BAC50W-S

In stock

SKU: IRG4BAC50W-S-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-273AA

Current-Collector (Ic) (Max)

55A

Packaging

Tube

Published

2007

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Power - Max

200W

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 27A

Td (on/off) @ 25°C

46ns/120ns

Switching Energy

80μJ (on), 320μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BAC50W-SPBF

In stock

SKU: IRG4BAC50W-SPBF-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Package / Case

TO-273AA

Current-Collector (Ic) (Max)

55A

Packaging

Tube

Published

2017

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Power - Max

200W

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 27A

Infineon Technologies IRG4BC10K

In stock

SKU: IRG4BC10K-9
Manufacturer

Infineon Technologies

Published

2000

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

9A

Number of Elements

1

Test Conditions

480V, 5A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

Mounting Type

Through Hole

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Packaging

Tube

Qualification Status

Not Qualified

Turn On Time

78 ns

Vce(on) (Max) @ Vge, Ic

2.62V @ 15V, 5A

Input Type

Standard

Power - Max

38W

Transistor Application

MOTOR CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Power Dissipation-Max (Abs)

38W

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

410 ns

Gate Charge

19nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

11ns/51ns

Switching Energy

160μJ (on), 100μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

210ns

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC10KDPBF

In stock

SKU: IRG4BC10KDPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 5A, 100 Ω, 15V

Turn Off Delay Time

100 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

38W

Factory Lead Time

16 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

38W

Current Rating

9A

Element Configuration

Single

Packaging

Tube

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

49ns/97ns

Transistor Application

MOTOR CONTROL

Rise Time

32ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.62V

Max Collector Current

9A

JEDEC-95 Code

TO-220AB

Turn On Time

78 ns

Vce(on) (Max) @ Vge, Ic

2.62V @ 15V, 5A

Turn Off Time-Nom (toff)

410 ns

Gate Charge

19nC

Input Type

Standard

Turn On Delay Time

46 ns

Switching Energy

250μJ (on), 140μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6.5V

Fall Time-Max (tf)

210ns

Height

8.77mm

Length

10.5156mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free