Showing 805–816 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IRG4BC10S
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2007 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
14A |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Terminal Form |
GULL WING |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Package / Case |
TO-220-3 |
Mounting Type |
Through Hole |
Polarity/Channel Type |
N-CHANNEL |
Time@Peak Reflow Temperature-Max (s) |
30 |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
38W |
Transistor Application |
POWER CONTROL |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
106 ns |
Peak Reflow Temperature (Cel) |
260 |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
25ns/630ns |
Switching Energy |
140μJ (on), 2.58mJ (off) |
JESD-30 Code |
R-PSSO-G2 |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC10SD
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Package / Case |
TO-220-3 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
14A |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Terminal Form |
GULL WING |
Mounting Type |
Through Hole |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
260 |
Reverse Recovery Time |
28ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
38W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
Turn On Time |
106 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC10SD-L
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mounting Type |
Through Hole |
Current-Collector (Ic) (Max) |
14A |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2001 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Type |
Standard |
Power - Max |
38W |
Reverse Recovery Time |
28ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC10SD-LPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mount |
Through Hole |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Reach Compliance Code |
unknown |
Current Rating |
14A |
Element Configuration |
Single |
Power Dissipation |
38W |
Input Type |
Standard |
Rise Time |
32ns |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC10SD-S
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e0 |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
14A |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
225 |
Published |
2001 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
TIN LEAD |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Surface Mount |
YES |
Mounting Type |
Surface Mount |
Reverse Recovery Time |
28ns |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
38W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
106 ns |
Time@Peak Reflow Temperature-Max (s) |
30 |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
Qualification Status |
Not Qualified |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC10SD-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 8A, 100 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
30 |
Factory Lead Time |
13 Weeks |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
14A |
Published |
2000 |
JESD-30 Code |
R-PSSO-G2 |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Turn Off Time-Nom (toff) |
1780 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
36ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
Turn On Time |
106 ns |
Element Configuration |
Single |
Power Dissipation |
38W |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
Height |
4.699mm |
Length |
10.668mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC10SDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
14A |
Test Conditions |
480V, 8A, 100Ohm, 15V |
Current Rating |
14A |
Mount |
Through Hole |
Published |
2007 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
18A |
Power - Max |
38W |
Rise Time |
32ns |
Collector Emitter Voltage (VCEO) |
1.8V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
1.8V @ 15V, 8A |
Power Dissipation |
38W |
Input Type |
Standard |
Td (on/off) @ 25°C |
76ns/815ns |
Switching Energy |
310μJ (on), 3.28mJ (off) |
Height |
8.77mm |
Length |
10.54mm |
Width |
4.69mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC10UDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 5A, 100 Ω, 15V |
Turn Off Delay Time |
87 ns |
Case Connection |
COLLECTOR |
Factory Lead Time |
16 Weeks |
Published |
2000 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
38W |
Current Rating |
8.5A |
Element Configuration |
Single |
Power Dissipation |
38W |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
34A |
Td (on/off) @ 25°C |
40ns/87ns |
Rise Time |
16ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.6V |
Max Collector Current |
8.5A |
Reverse Recovery Time |
28 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
56 ns |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 5A |
Turn Off Time-Nom (toff) |
345 ns |
Gate Charge |
15nC |
Turn On Delay Time |
40 ns |
Transistor Application |
POWER CONTROL |
Switching Energy |
140μJ (on), 120μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
210ns |
Height |
15.24mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC10UPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Voltage - Rated DC |
600V |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Collector-Emitter Breakdown Voltage |
600V |
Test Conditions |
480V, 5A, 100Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Current-Collector (Ic) (Max) |
8.5A |
Packaging |
Tube |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.6V @ 15V, 5A |
Input Type |
Standard |
Power - Max |
38W |
Rise Time |
16ns |
Collector Emitter Voltage (VCEO) |
2.6V |
Max Collector Current |
8.5A |
Reverse Recovery Time |
28ns |
Current Rating |
8.5A |
Max Power Dissipation |
38W |
Gate Charge |
15nC |
Current - Collector Pulsed (Icm) |
34A |
Td (on/off) @ 25°C |
40ns/87ns |
Switching Energy |
140μJ (on), 120μJ (off) |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Element Configuration |
Single |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC15MDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Current Rating |
14A |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Weight |
6.000006g |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
14A |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Test Conditions |
480V, 8.6A, 75Ohm, 15V |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
600V |
Max Power Dissipation |
49W |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Gate Charge |
46nC |
Current - Collector Pulsed (Icm) |
28A |
Power - Max |
49W |
Rise Time |
38ns |
Collector Emitter Voltage (VCEO) |
2.3V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.3V @ 15V, 8.6A |
Power Dissipation |
49W |
Element Configuration |
Single |
Td (on/off) @ 25°C |
21ns/540ns |
Switching Energy |
320μJ (on), 1.93mJ (off) |
Height |
15.24mm |
Length |
10.5156mm |
Width |
4.699mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Input Type |
Standard |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC15UD
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
14A |
Number of Elements |
1 |
Test Conditions |
480V, 7.8A, 75 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Published |
2001 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
49W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
28ns |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Turn On Time |
37 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 7.8A |
Turn Off Time-Nom (toff) |
400 ns |
Gate Charge |
23nC |
Current - Collector Pulsed (Icm) |
42A |
Td (on/off) @ 25°C |
17ns/160ns |
Switching Energy |
240μJ (on), 260μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC15UD-LPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2001 |
Mounting Type |
Through Hole |
Number of Pins |
3 |
Weight |
2.084002g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 7.8A, 75 Ω, 15V |
Turn Off Delay Time |
160 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Single |
Packaging |
Tube |
JESD-609 Code |
e3 |
Part Status |
Last Time Buy |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
49W |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Through Hole |
Factory Lead Time |
13 Weeks |
Gate Charge |
23nC |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
Turn On Time |
37 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 7.8A |
Turn Off Time-Nom (toff) |
400 ns |
Current - Collector Pulsed (Icm) |
42A |
Td (on/off) @ 25°C |
17ns/160ns |
Power Dissipation |
49W |
Switching Energy |
240μJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
9.652mm |
Length |
10.668mm |
Width |
4.826mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
17 ns |
Lead Free |
Lead Free |