Transistors - IGBTs - Single

Infineon Technologies IRG4BC10S

In stock

SKU: IRG4BC10S-9
Manufacturer

Infineon Technologies

Published

2007

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

14A

Number of Elements

1

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Terminal Form

GULL WING

Packaging

Tube

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Package / Case

TO-220-3

Mounting Type

Through Hole

Polarity/Channel Type

N-CHANNEL

Time@Peak Reflow Temperature-Max (s)

30

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

38W

Transistor Application

POWER CONTROL

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

106 ns

Peak Reflow Temperature (Cel)

260

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

25ns/630ns

Switching Energy

140μJ (on), 2.58mJ (off)

JESD-30 Code

R-PSSO-G2

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC10SD

In stock

SKU: IRG4BC10SD-9
Manufacturer

Infineon Technologies

Published

2000

Package / Case

TO-220-3

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

14A

Number of Elements

1

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Terminal Form

GULL WING

Mounting Type

Through Hole

JESD-609 Code

e3

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Packaging

Tube

Peak Reflow Temperature (Cel)

260

Reverse Recovery Time

28ns

Voltage - Collector Emitter Breakdown (Max)

600V

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

38W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Time@Peak Reflow Temperature-Max (s)

30

JESD-30 Code

R-PSSO-G2

Turn On Time

106 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC10SD-L

In stock

SKU: IRG4BC10SD-L-9
Manufacturer

Infineon Technologies

Mounting Type

Through Hole

Current-Collector (Ic) (Max)

14A

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Power - Max

38W

Reverse Recovery Time

28ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC10SD-LPBF

In stock

SKU: IRG4BC10SD-LPBF-9
Manufacturer

Infineon Technologies

Mount

Through Hole

Mounting Type

Through Hole

Number of Pins

3

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Voltage - Rated DC

600V

Max Power Dissipation

38W

Reach Compliance Code

unknown

Current Rating

14A

Element Configuration

Single

Power Dissipation

38W

Input Type

Standard

Rise Time

32ns

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Reverse Recovery Time

28 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4BC10SD-S

In stock

SKU: IRG4BC10SD-S-9
Manufacturer

Infineon Technologies

JESD-609 Code

e0

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

14A

Number of Elements

1

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

225

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

TIN LEAD

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Terminal Form

GULL WING

Surface Mount

YES

Mounting Type

Surface Mount

Reverse Recovery Time

28ns

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

38W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

106 ns

Time@Peak Reflow Temperature-Max (s)

30

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Qualification Status

Not Qualified

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC10SD-SPBF

In stock

SKU: IRG4BC10SD-SPBF-9
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 8A, 100 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Time@Peak Reflow Temperature-Max (s)

30

Factory Lead Time

13 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

38W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

14A

Published

2000

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Turn Off Time-Nom (toff)

1780 ns

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

36ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Reverse Recovery Time

28 ns

Turn On Time

106 ns

Element Configuration

Single

Power Dissipation

38W

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Height

4.699mm

Length

10.668mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4BC10SDPBF

In stock

SKU: IRG4BC10SDPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

14A

Test Conditions

480V, 8A, 100Ohm, 15V

Current Rating

14A

Mount

Through Hole

Published

2007

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

600V

Max Power Dissipation

38W

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Gate Charge

15nC

Current - Collector Pulsed (Icm)

18A

Power - Max

38W

Rise Time

32ns

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

14A

Reverse Recovery Time

28 ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 8A

Power Dissipation

38W

Input Type

Standard

Td (on/off) @ 25°C

76ns/815ns

Switching Energy

310μJ (on), 3.28mJ (off)

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4BC10UDPBF

In stock

SKU: IRG4BC10UDPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 5A, 100 Ω, 15V

Turn Off Delay Time

87 ns

Case Connection

COLLECTOR

Factory Lead Time

16 Weeks

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

38W

Current Rating

8.5A

Element Configuration

Single

Power Dissipation

38W

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Current - Collector Pulsed (Icm)

34A

Td (on/off) @ 25°C

40ns/87ns

Rise Time

16ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

8.5A

Reverse Recovery Time

28 ns

JEDEC-95 Code

TO-220AB

Turn On Time

56 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Turn Off Time-Nom (toff)

345 ns

Gate Charge

15nC

Turn On Delay Time

40 ns

Transistor Application

POWER CONTROL

Switching Energy

140μJ (on), 120μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

210ns

Height

15.24mm

Length

10.5156mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4BC10UPBF

In stock

SKU: IRG4BC10UPBF-9
Manufacturer

Infineon Technologies

Voltage - Rated DC

600V

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Weight

6.000006g

Collector-Emitter Breakdown Voltage

600V

Test Conditions

480V, 5A, 100Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Current-Collector (Ic) (Max)

8.5A

Packaging

Tube

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 5A

Input Type

Standard

Power - Max

38W

Rise Time

16ns

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

8.5A

Reverse Recovery Time

28ns

Current Rating

8.5A

Max Power Dissipation

38W

Gate Charge

15nC

Current - Collector Pulsed (Icm)

34A

Td (on/off) @ 25°C

40ns/87ns

Switching Energy

140μJ (on), 120μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Element Configuration

Single

Lead Free

Lead Free

Infineon Technologies IRG4BC15MDPBF

In stock

SKU: IRG4BC15MDPBF-9
Manufacturer

Infineon Technologies

Current Rating

14A

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Weight

6.000006g

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

14A

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Test Conditions

480V, 8.6A, 75Ohm, 15V

Published

2004

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

600V

Max Power Dissipation

49W

Mounting Type

Through Hole

Mount

Through Hole

Gate Charge

46nC

Current - Collector Pulsed (Icm)

28A

Power - Max

49W

Rise Time

38ns

Collector Emitter Voltage (VCEO)

2.3V

Max Collector Current

14A

Reverse Recovery Time

28 ns

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 8.6A

Power Dissipation

49W

Element Configuration

Single

Td (on/off) @ 25°C

21ns/540ns

Switching Energy

320μJ (on), 1.93mJ (off)

Height

15.24mm

Length

10.5156mm

Width

4.699mm

Radiation Hardening

No

RoHS Status

RoHS Compliant

Input Type

Standard

Lead Free

Lead Free

Infineon Technologies IRG4BC15UD

In stock

SKU: IRG4BC15UD-9
Manufacturer

Infineon Technologies

Packaging

Tube

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

14A

Number of Elements

1

Test Conditions

480V, 7.8A, 75 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Published

2001

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

ULTRA FAST SOFT RECOVERY

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

49W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

28ns

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 7.8A

Turn Off Time-Nom (toff)

400 ns

Gate Charge

23nC

Current - Collector Pulsed (Icm)

42A

Td (on/off) @ 25°C

17ns/160ns

Switching Energy

240μJ (on), 260μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC15UD-LPBF

In stock

SKU: IRG4BC15UD-LPBF-9
Manufacturer

Infineon Technologies

Published

2001

Mounting Type

Through Hole

Number of Pins

3

Weight

2.084002g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 7.8A, 75 Ω, 15V

Turn Off Delay Time

160 ns

Operating Temperature

-55°C~150°C TJ

Element Configuration

Single

Packaging

Tube

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

49W

Peak Reflow Temperature (Cel)

260

Current Rating

14A

Time@Peak Reflow Temperature-Max (s)

30

Mount

Through Hole

Factory Lead Time

13 Weeks

Gate Charge

23nC

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

20ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.4V

Max Collector Current

14A

Reverse Recovery Time

28 ns

Turn On Time

37 ns

Vce(on) (Max) @ Vge, Ic

2.4V @ 15V, 7.8A

Turn Off Time-Nom (toff)

400 ns

Current - Collector Pulsed (Icm)

42A

Td (on/off) @ 25°C

17ns/160ns

Power Dissipation

49W

Switching Energy

240μJ (on), 260μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

9.652mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

17 ns

Lead Free

Lead Free