Showing 817–828 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IRG4BC15UD-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
260.39037mg |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 7.8A, 75 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
JESD-30 Code |
R-PSSO-G2 |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
49W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
14A |
Time@Peak Reflow Temperature-Max (s) |
30 |
Mount |
Surface Mount |
Factory Lead Time |
16 Weeks |
Turn Off Time-Nom (toff) |
400 ns |
Power Dissipation |
49W |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
20ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.4V |
Max Collector Current |
14A |
Reverse Recovery Time |
28 ns |
Turn On Time |
37 ns |
Vce(on) (Max) @ Vge, Ic |
2.4V @ 15V, 7.8A |
Gate Charge |
23nC |
Current - Collector Pulsed (Icm) |
42A |
Element Configuration |
Single |
Td (on/off) @ 25°C |
17ns/160ns |
Switching Energy |
240μJ (on), 260μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
4.83mm |
Length |
10.668mm |
Width |
4.826mm |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Case Connection |
COLLECTOR |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC20F
In stock
Manufacturer |
Infineon Technologies |
---|---|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
16A |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Packaging |
Tube |
Published |
2000 |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
FAST SWITCHING |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Package / Case |
TO-220-3 |
Mounting Type |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
41 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-220AB |
Qualification Status |
Not Qualified |
JESD-30 Code |
R-PSFM-T3 |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 9A |
Turn Off Time-Nom (toff) |
640 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
64A |
Td (on/off) @ 25°C |
24ns/190ns |
Switching Energy |
70μJ (on), 600μJ (off) |
Configuration |
SINGLE |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20F-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Current-Collector (Ic) (Max) |
16A |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Packaging |
Tube |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Type |
Standard |
Power - Max |
60W |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 9A |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
64A |
Td (on/off) @ 25°C |
24ns/190ns |
Switching Energy |
70μJ (on), 600μJ (off) |
Infineon Technologies IRG4BC20FD-S
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
1997 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
16A |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Packaging |
Tube |
Time@Peak Reflow Temperature-Max (s) |
30 |
Reverse Recovery Time |
37ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Turn On Time |
63 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 9A |
Turn Off Time-Nom (toff) |
610 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
64A |
Td (on/off) @ 25°C |
43ns/240ns |
Switching Energy |
250μJ (on), 640μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20FD-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Current-Collector (Ic) (Max) |
16A |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
1997 |
Part Status |
Obsolete |
Mounting Type |
Surface Mount |
Power - Max |
60W |
Input Type |
Standard |
Reverse Recovery Time |
37ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 9A |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
64A |
Td (on/off) @ 25°C |
43ns/240ns |
Switching Energy |
250μJ (on), 640μJ (off) |
Infineon Technologies IRG4BC20FD-STRR
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Surface Mount |
YES |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
16A |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Peak Reflow Temperature (Cel) |
260 |
Mounting Type |
Surface Mount |
JESD-609 Code |
e3 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
MATTE TIN OVER NICKEL |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Packaging |
Tape & Reel (TR) |
Time@Peak Reflow Temperature-Max (s) |
30 |
Reverse Recovery Time |
37ns |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JESD-30 Code |
R-PSSO-G2 |
Qualification Status |
Not Qualified |
Turn On Time |
63 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 9A |
Turn Off Time-Nom (toff) |
610 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
64A |
Td (on/off) @ 25°C |
43ns/240ns |
Switching Energy |
250μJ (on), 640μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20FPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
1997 |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Turn Off Delay Time |
190 ns |
Operating Temperature |
-55°C~150°C TJ |
Element Configuration |
Dual |
Factory Lead Time |
16 Weeks |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
FAST SWITCHING |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Terminal Position |
SINGLE |
Current Rating |
16A |
Packaging |
Tube |
Power Dissipation |
60W |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
64A |
Turn On Delay Time |
24 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
17ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2V |
Max Collector Current |
16A |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
41 ns |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 9A |
Turn Off Time-Nom (toff) |
640 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Td (on/off) @ 25°C |
24ns/190ns |
Switching Energy |
70μJ (on), 600μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
15.24mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRG4BC20K
In stock
Manufacturer |
Infineon Technologies |
---|---|
Qualification Status |
Not Qualified |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
16A |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Published |
2000 |
Part Status |
Obsolete |
Packaging |
Tube |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
JESD-30 Code |
R-PSFM-T3 |
Package / Case |
TO-220-3 |
Mounting Type |
Through Hole |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 9A |
Turn Off Time-Nom (toff) |
380 ns |
Power - Max |
60W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Power Dissipation-Max (Abs) |
60W |
Turn On Time |
88 ns |
Case Connection |
COLLECTOR |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Gate Charge |
34nC |
Current - Collector Pulsed (Icm) |
32A |
Td (on/off) @ 25°C |
28ns/150ns |
Switching Energy |
150μJ (on), 250μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
110ns |
Input Type |
Standard |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20K-STRLP
In stock
Manufacturer |
Infineon Technologies |
---|---|
Mounting Type |
Surface Mount |
Current-Collector (Ic) (Max) |
16A |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Input Type |
Standard |
Power - Max |
60W |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 9A |
Gate Charge |
34nC |
Current - Collector Pulsed (Icm) |
32A |
Td (on/off) @ 25°C |
28ns/150ns |
Switching Energy |
150μJ (on), 250μJ (off) |
Infineon Technologies IRG4BC20K-STRRP
In stock
Manufacturer |
Infineon Technologies |
---|---|
Max Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Supplier Device Package |
D2PAK |
Weight |
260.39037mg |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
16A |
Test Conditions |
480V, 9A, 50Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tape & Reel (TR) |
Published |
2004 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Mount |
Surface Mount |
Max Power Dissipation |
60W |
Min Operating Temperature |
-55°C |
Element Configuration |
Single |
Input Type |
Standard |
Power - Max |
60W |
Collector Emitter Voltage (VCEO) |
2.8V |
Max Collector Current |
16A |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 9A |
Gate Charge |
34nC |
Current - Collector Pulsed (Icm) |
32A |
Td (on/off) @ 25°C |
28ns/150ns |
Switching Energy |
150μJ (on), 250μJ (off) |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Infineon Technologies IRG4BC20KD
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
16A |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Published |
2000 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
37ns |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Turn On Time |
88 ns |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 9A |
Turn Off Time-Nom (toff) |
380 ns |
Gate Charge |
34nC |
Current - Collector Pulsed (Icm) |
32A |
Td (on/off) @ 25°C |
54ns/180ns |
Switching Energy |
340μJ (on), 300μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20KD-S
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e0 |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
16A |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
225 |
Published |
2000 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Surface Mount |
YES |
Mounting Type |
Surface Mount |
Reverse Recovery Time |
37ns |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
MOTOR CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
88 ns |
Time@Peak Reflow Temperature-Max (s) |
30 |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 9A |
Turn Off Time-Nom (toff) |
380 ns |
Gate Charge |
34nC |
Current - Collector Pulsed (Icm) |
32A |
Td (on/off) @ 25°C |
54ns/180ns |
Switching Energy |
340μJ (on), 300μJ (off) |
Qualification Status |
Not Qualified |
RoHS Status |
Non-RoHS Compliant |