Transistors - IGBTs - Single

Infineon Technologies IRG4BC20KD-SPBF

In stock

SKU: IRG4BC20KD-SPBF-9
Manufacturer

Infineon Technologies

Part Status

Last Time Buy

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Weight

2g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 9A, 50 Ω, 15V

Turn Off Delay Time

180 ns

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2000

Base Part Number

IRG4BC20KD-SPBF

Factory Lead Time

18 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Termination

SMD/SMT

ECCN Code

EAR99

Terminal Finish

Matte Tin (Sn)

Additional Feature

ULTRA FAST SOFT RECOVERY

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

16A

Time@Peak Reflow Temperature-Max (s)

30

JESD-609 Code

e3

JESD-30 Code

R-PSSO-G2

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 9A

Turn Off Time-Nom (toff)

380 ns

Case Connection

COLLECTOR

Input Type

Standard

Turn On Delay Time

54 ns

Forward Current

7A

Transistor Application

MOTOR CONTROL

Rise Time

37ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.8V

Max Collector Current

16A

Reverse Recovery Time

37 ns

Turn On Time

88 ns

Max Forward Surge Current (Ifsm)

32A

Element Configuration

Single

Power Dissipation

60W

Gate Charge

34nC

Td (on/off) @ 25°C

54ns/180ns

Switching Energy

340μJ (on), 300μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

110ns

Height

4.83mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Lead Free

Lead Free

Infineon Technologies IRG4BC20KDPBF

In stock

SKU: IRG4BC20KDPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Weight

6.000006g

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 9A, 50 Ω, 15V

Turn Off Delay Time

180 ns

Case Connection

COLLECTOR

Factory Lead Time

16 Weeks

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

60W

Current Rating

16A

Element Configuration

Single

Power Dissipation

60W

Operating Temperature

-55°C~150°C TJ

Input Type

Standard

Current - Collector Pulsed (Icm)

32A

Td (on/off) @ 25°C

54ns/180ns

Rise Time

34ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.8V

Max Collector Current

16A

Reverse Recovery Time

37 ns

JEDEC-95 Code

TO-220AB

Turn On Time

88 ns

Vce(on) (Max) @ Vge, Ic

2.8V @ 15V, 9A

Turn Off Time-Nom (toff)

380 ns

Gate Charge

34nC

Turn On Delay Time

54 ns

Transistor Application

MOTOR CONTROL

Switching Energy

340μJ (on), 300μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

110ns

Height

8.77mm

Length

10.5156mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4BC20MDPBF

In stock

SKU: IRG4BC20MDPBF-9
Manufacturer

Infineon Technologies

Max Power Dissipation

60W

Package / Case

TO-220-3

Number of Pins

3

Supplier Device Package

TO-220AB

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

18A

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Test Conditions

480V, 11A, 50Ohm, 15V

Published

2010

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Voltage - Rated DC

600V

Mounting Type

Through Hole

Mount

Through Hole

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 11A

Input Type

Standard

Power - Max

60W

Rise Time

37ns

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

18A

Reverse Recovery Time

37 ns

Element Configuration

Single

Current Rating

18A

Gate Charge

39nC

Current - Collector Pulsed (Icm)

36A

Td (on/off) @ 25°C

21ns/463ns

Switching Energy

410μJ (on), 2.03mJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Power Dissipation

60W

Lead Free

Lead Free

Infineon Technologies IRG4BC20SD

In stock

SKU: IRG4BC20SD-9
Manufacturer

Infineon Technologies

Packaging

Tube

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

19A

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Published

1997

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

ULTRA FAST SOFT RECOVERY

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

37ns

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Time

99 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

62ns/690ns

Switching Energy

320μJ (on), 2.58mJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC20SD-S

In stock

SKU: IRG4BC20SD-S-9
Manufacturer

Infineon Technologies

JESD-609 Code

e0

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

19A

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Peak Reflow Temperature (Cel)

225

Published

1997

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Tin/Lead (Sn/Pb)

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Terminal Form

GULL WING

Surface Mount

YES

Mounting Type

Surface Mount

Reverse Recovery Time

37ns

JESD-30 Code

R-PSSO-G2

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

99 ns

Time@Peak Reflow Temperature-Max (s)

30

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

62ns/690ns

Switching Energy

320μJ (on), 2.58mJ (off)

Qualification Status

Not Qualified

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC20SD-SPBF

In stock

SKU: IRG4BC20SD-SPBF-9
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Current Rating

19A

Factory Lead Time

13 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Published

1997

Time@Peak Reflow Temperature-Max (s)

30

Turn On Time

99 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Power Dissipation

60W

Case Connection

COLLECTOR

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

32ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

19A

Reverse Recovery Time

37 ns

JESD-30 Code

R-PSSO-G2

Element Configuration

Single

Turn Off Time-Nom (toff)

1780 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

62ns/690ns

Switching Energy

320μJ (on), 2.58mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4BC20SDPBF

In stock

SKU: IRG4BC20SDPBF-9
Manufacturer

Infineon Technologies

Packaging

Tube

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Turn Off Delay Time

1.04 μs

Element Configuration

Single

Factory Lead Time

18 Weeks

Published

2010

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

60W

Current Rating

19A

Operating Temperature

-55°C~150°C TJ

Power Dissipation

60W

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Turn Off Time-Nom (toff)

1780 ns

Turn On Delay Time

62 ns

Transistor Application

POWER CONTROL

Rise Time

35ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

19A

Reverse Recovery Time

37 ns

JEDEC-95 Code

TO-220AB

Turn On Time

99 ns

Case Connection

COLLECTOR

Input Type

Standard

Gate Charge

27nC

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

62ns/690ns

Switching Energy

320μJ (on), 2.58mJ (off)

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4BC20SPBF

In stock

SKU: IRG4BC20SPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 10A, 50 Ω, 15V

Turn Off Delay Time

540 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

60W

Packaging

Tube

Part Status

Not For New Designs

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Position

SINGLE

Current Rating

19A

Element Configuration

Dual

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

27nC

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

9.7ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.6V

Max Collector Current

19A

JEDEC-95 Code

TO-220AB

Turn On Time

38 ns

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Turn Off Time-Nom (toff)

1540 ns

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

27ns/540ns

Case Connection

COLLECTOR

Switching Energy

120μJ (on), 2.05mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Turn On Delay Time

27 ns

Lead Free

Lead Free

Infineon Technologies IRG4BC20SPBFXKMA1

In stock

SKU: IRG4BC20SPBFXKMA1-9
Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Package / Case

TO-220-3

Supplier Device Package

TO-220AB

Current-Collector (Ic) (Max)

19A

Test Conditions

480V, 10A, 50Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Part Status

Last Time Buy

Mounting Type

Through Hole

Power - Max

60W

Input Type

Standard

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.6V @ 15V, 10A

Gate Charge

27nC

Current - Collector Pulsed (Icm)

38A

Td (on/off) @ 25°C

27ns/540ns

Switching Energy

120μJ (on), 2.05mJ (off)

RoHS Status

ROHS3 Compliant

Infineon Technologies IRG4BC20U

In stock

SKU: IRG4BC20U-9
Manufacturer

Infineon Technologies

Packaging

Tube

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

13A

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Mounting Type

Through Hole

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

ULTRA FAST

Terminal Position

SINGLE

Operating Temperature

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Voltage - Collector Emitter Breakdown (Max)

600V

Turn On Time

34 ns

Configuration

SINGLE

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

JEDEC-95 Code

TO-220AB

JESD-30 Code

R-PSFM-T3

Qualification Status

Not Qualified

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Turn Off Time-Nom (toff)

330 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

21ns/86ns

Switching Energy

100μJ (on), 120μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC20UD

In stock

SKU: IRG4BC20UD-9
Manufacturer

Infineon Technologies

Packaging

Tube

Package / Case

TO-220-3

Surface Mount

NO

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

13A

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

NOT SPECIFIED

Mounting Type

Through Hole

Published

2003

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Additional Feature

ULTRA FAST SOFT RECOVERY

Terminal Position

SINGLE

Peak Reflow Temperature (Cel)

NOT SPECIFIED

Operating Temperature

-55°C~150°C TJ

JESD-30 Code

R-PSFM-T3

JEDEC-95 Code

TO-220AB

Voltage - Collector Emitter Breakdown (Max)

600V

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

37ns

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Turn On Time

55 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Turn Off Time-Nom (toff)

320 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

39ns/93ns

Switching Energy

160μJ (on), 130μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC20UD-SPBF

In stock

SKU: IRG4BC20UD-SPBF-9
Manufacturer

Infineon Technologies

Part Status

Obsolete

Mount

Surface Mount

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2001

Element Configuration

Single

Factory Lead Time

14 Weeks

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

13A

Time@Peak Reflow Temperature-Max (s)

30

JESD-30 Code

R-PSSO-G2

JESD-609 Code

e3

Power Dissipation

60W

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

39ns/93ns

Transistor Application

POWER CONTROL

Rise Time

15ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

13A

Reverse Recovery Time

37 ns

Turn On Time

55 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Turn Off Time-Nom (toff)

320 ns

Gate Charge

27nC

Case Connection

COLLECTOR

Input Type

Standard

Switching Energy

160μJ (on), 130μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

170ns

Height

4.699mm

Length

10.668mm

Width

9.65mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free