Showing 829–840 of 3680 results
Transistors - IGBTs - Single
Infineon Technologies IRG4BC20KD-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Last Time Buy |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Weight |
2g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Turn Off Delay Time |
180 ns |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2000 |
Base Part Number |
IRG4BC20KD-SPBF |
Factory Lead Time |
18 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Termination |
SMD/SMT |
ECCN Code |
EAR99 |
Terminal Finish |
Matte Tin (Sn) |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
16A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-609 Code |
e3 |
JESD-30 Code |
R-PSSO-G2 |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 9A |
Turn Off Time-Nom (toff) |
380 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Turn On Delay Time |
54 ns |
Forward Current |
7A |
Transistor Application |
MOTOR CONTROL |
Rise Time |
37ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.8V |
Max Collector Current |
16A |
Reverse Recovery Time |
37 ns |
Turn On Time |
88 ns |
Max Forward Surge Current (Ifsm) |
32A |
Element Configuration |
Single |
Power Dissipation |
60W |
Gate Charge |
34nC |
Td (on/off) @ 25°C |
54ns/180ns |
Switching Energy |
340μJ (on), 300μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
110ns |
Height |
4.83mm |
Length |
10.668mm |
Width |
4.826mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC20KDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Weight |
6.000006g |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 9A, 50 Ω, 15V |
Turn Off Delay Time |
180 ns |
Case Connection |
COLLECTOR |
Factory Lead Time |
16 Weeks |
Published |
2000 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Current Rating |
16A |
Element Configuration |
Single |
Power Dissipation |
60W |
Operating Temperature |
-55°C~150°C TJ |
Input Type |
Standard |
Current - Collector Pulsed (Icm) |
32A |
Td (on/off) @ 25°C |
54ns/180ns |
Rise Time |
34ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.8V |
Max Collector Current |
16A |
Reverse Recovery Time |
37 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
88 ns |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 9A |
Turn Off Time-Nom (toff) |
380 ns |
Gate Charge |
34nC |
Turn On Delay Time |
54 ns |
Transistor Application |
MOTOR CONTROL |
Switching Energy |
340μJ (on), 300μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
110ns |
Height |
8.77mm |
Length |
10.5156mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRG4BC20MDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Max Power Dissipation |
60W |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Supplier Device Package |
TO-220AB |
Collector-Emitter Breakdown Voltage |
600V |
Current-Collector (Ic) (Max) |
18A |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Test Conditions |
480V, 11A, 50Ohm, 15V |
Published |
2010 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Max Operating Temperature |
150°C |
Min Operating Temperature |
-55°C |
Voltage - Rated DC |
600V |
Mounting Type |
Through Hole |
Mount |
Through Hole |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 11A |
Input Type |
Standard |
Power - Max |
60W |
Rise Time |
37ns |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
18A |
Reverse Recovery Time |
37 ns |
Element Configuration |
Single |
Current Rating |
18A |
Gate Charge |
39nC |
Current - Collector Pulsed (Icm) |
36A |
Td (on/off) @ 25°C |
21ns/463ns |
Switching Energy |
410μJ (on), 2.03mJ (off) |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Power Dissipation |
60W |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC20SD
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
19A |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 50 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
37ns |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Turn On Time |
99 ns |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 10A |
Turn Off Time-Nom (toff) |
1780 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
38A |
Td (on/off) @ 25°C |
62ns/690ns |
Switching Energy |
320μJ (on), 2.58mJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20SD-S
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e0 |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
19A |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Peak Reflow Temperature (Cel) |
225 |
Published |
1997 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
Terminal Finish |
Tin/Lead (Sn/Pb) |
Additional Feature |
LOW CONDUCTION LOSS |
Terminal Position |
SINGLE |
Terminal Form |
GULL WING |
Surface Mount |
YES |
Mounting Type |
Surface Mount |
Reverse Recovery Time |
37ns |
JESD-30 Code |
R-PSSO-G2 |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
99 ns |
Time@Peak Reflow Temperature-Max (s) |
30 |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 10A |
Turn Off Time-Nom (toff) |
1780 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
38A |
Td (on/off) @ 25°C |
62ns/690ns |
Switching Energy |
320μJ (on), 2.58mJ (off) |
Qualification Status |
Not Qualified |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20SD-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
JESD-609 Code |
e3 |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Current Rating |
19A |
Factory Lead Time |
13 Weeks |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Published |
1997 |
Time@Peak Reflow Temperature-Max (s) |
30 |
Turn On Time |
99 ns |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 10A |
Power Dissipation |
60W |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
32ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.6V |
Max Collector Current |
19A |
Reverse Recovery Time |
37 ns |
JESD-30 Code |
R-PSSO-G2 |
Element Configuration |
Single |
Turn Off Time-Nom (toff) |
1780 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
38A |
Td (on/off) @ 25°C |
62ns/690ns |
Switching Energy |
320μJ (on), 2.58mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Radiation Hardening |
No |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC20SDPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Mount |
Through Hole |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 50 Ω, 15V |
Turn Off Delay Time |
1.04 μs |
Element Configuration |
Single |
Factory Lead Time |
18 Weeks |
Published |
2010 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Additional Feature |
LOW CONDUCTION LOSS |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Current Rating |
19A |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
60W |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 10A |
Turn Off Time-Nom (toff) |
1780 ns |
Turn On Delay Time |
62 ns |
Transistor Application |
POWER CONTROL |
Rise Time |
35ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.6V |
Max Collector Current |
19A |
Reverse Recovery Time |
37 ns |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
99 ns |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
38A |
Td (on/off) @ 25°C |
62ns/690ns |
Switching Energy |
320μJ (on), 2.58mJ (off) |
Height |
8.77mm |
Length |
10.54mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Contains Lead, Lead Free |
Infineon Technologies IRG4BC20SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Published |
2000 |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 10A, 50 Ω, 15V |
Turn Off Delay Time |
540 ns |
Operating Temperature |
-55°C~150°C TJ |
Power Dissipation |
60W |
Packaging |
Tube |
Part Status |
Not For New Designs |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Termination |
Through Hole |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Terminal Position |
SINGLE |
Current Rating |
19A |
Element Configuration |
Dual |
Mount |
Through Hole |
Factory Lead Time |
16 Weeks |
Gate Charge |
27nC |
Input Type |
Standard |
Transistor Application |
POWER CONTROL |
Rise Time |
9.7ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
1.6V |
Max Collector Current |
19A |
JEDEC-95 Code |
TO-220AB |
Turn On Time |
38 ns |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 10A |
Turn Off Time-Nom (toff) |
1540 ns |
Current - Collector Pulsed (Icm) |
38A |
Td (on/off) @ 25°C |
27ns/540ns |
Case Connection |
COLLECTOR |
Switching Energy |
120μJ (on), 2.05mJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Height |
8.77mm |
Length |
10.54mm |
Width |
4.69mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
ROHS3 Compliant |
Turn On Delay Time |
27 ns |
Lead Free |
Lead Free |
Infineon Technologies IRG4BC20SPBFXKMA1
In stock
Manufacturer |
Infineon Technologies |
---|---|
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
Current-Collector (Ic) (Max) |
19A |
Test Conditions |
480V, 10A, 50Ohm, 15V |
Operating Temperature |
-55°C~150°C TJ |
Part Status |
Last Time Buy |
Mounting Type |
Through Hole |
Power - Max |
60W |
Input Type |
Standard |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 10A |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
38A |
Td (on/off) @ 25°C |
27ns/540ns |
Switching Energy |
120μJ (on), 2.05mJ (off) |
RoHS Status |
ROHS3 Compliant |
Infineon Technologies IRG4BC20U
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
13A |
Number of Elements |
1 |
Test Conditions |
480V, 6.5A, 50 Ω, 15V |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Published |
2000 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
ULTRA FAST |
Terminal Position |
SINGLE |
Operating Temperature |
-55°C~150°C TJ |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Turn On Time |
34 ns |
Configuration |
SINGLE |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
JEDEC-95 Code |
TO-220AB |
JESD-30 Code |
R-PSFM-T3 |
Qualification Status |
Not Qualified |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 6.5A |
Turn Off Time-Nom (toff) |
330 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
52A |
Td (on/off) @ 25°C |
21ns/86ns |
Switching Energy |
100μJ (on), 120μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20UD
In stock
Manufacturer |
Infineon Technologies |
---|---|
Packaging |
Tube |
Package / Case |
TO-220-3 |
Surface Mount |
NO |
Transistor Element Material |
SILICON |
Current-Collector (Ic) (Max) |
13A |
Number of Elements |
1 |
Test Conditions |
480V, 6.5A, 50 Ω, 15V |
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
Mounting Type |
Through Hole |
Published |
2003 |
Part Status |
Obsolete |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
3 |
Additional Feature |
ULTRA FAST SOFT RECOVERY |
Terminal Position |
SINGLE |
Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
Operating Temperature |
-55°C~150°C TJ |
JESD-30 Code |
R-PSFM-T3 |
JEDEC-95 Code |
TO-220AB |
Voltage - Collector Emitter Breakdown (Max) |
600V |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Power - Max |
60W |
Transistor Application |
POWER CONTROL |
Polarity/Channel Type |
N-CHANNEL |
Reverse Recovery Time |
37ns |
Qualification Status |
Not Qualified |
Configuration |
SINGLE WITH BUILT-IN DIODE |
Turn On Time |
55 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 6.5A |
Turn Off Time-Nom (toff) |
320 ns |
Gate Charge |
27nC |
Current - Collector Pulsed (Icm) |
52A |
Td (on/off) @ 25°C |
39ns/93ns |
Switching Energy |
160μJ (on), 130μJ (off) |
RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC20UD-SPBF
In stock
Manufacturer |
Infineon Technologies |
---|---|
Part Status |
Obsolete |
Mount |
Surface Mount |
Mounting Type |
Surface Mount |
Number of Pins |
3 |
Transistor Element Material |
SILICON |
Collector-Emitter Breakdown Voltage |
600V |
Number of Elements |
1 |
Test Conditions |
480V, 6.5A, 50 Ω, 15V |
Operating Temperature |
-55°C~150°C TJ |
Packaging |
Tube |
Published |
2001 |
Element Configuration |
Single |
Factory Lead Time |
14 Weeks |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
Number of Terminations |
2 |
ECCN Code |
EAR99 |
Voltage - Rated DC |
600V |
Max Power Dissipation |
60W |
Terminal Form |
GULL WING |
Peak Reflow Temperature (Cel) |
260 |
Current Rating |
13A |
Time@Peak Reflow Temperature-Max (s) |
30 |
JESD-30 Code |
R-PSSO-G2 |
JESD-609 Code |
e3 |
Power Dissipation |
60W |
Current - Collector Pulsed (Icm) |
52A |
Td (on/off) @ 25°C |
39ns/93ns |
Transistor Application |
POWER CONTROL |
Rise Time |
15ns |
Polarity/Channel Type |
N-CHANNEL |
Collector Emitter Voltage (VCEO) |
2.1V |
Max Collector Current |
13A |
Reverse Recovery Time |
37 ns |
Turn On Time |
55 ns |
Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 6.5A |
Turn Off Time-Nom (toff) |
320 ns |
Gate Charge |
27nC |
Case Connection |
COLLECTOR |
Input Type |
Standard |
Switching Energy |
160μJ (on), 130μJ (off) |
Gate-Emitter Voltage-Max |
20V |
Gate-Emitter Thr Voltage-Max |
6V |
Fall Time-Max (tf) |
170ns |
Height |
4.699mm |
Length |
10.668mm |
Width |
9.65mm |
Radiation Hardening |
No |
REACH SVHC |
No SVHC |
RoHS Status |
RoHS Compliant |
Lead Free |
Lead Free |