Transistors - IGBTs - Single

Infineon Technologies IRG4BC20UDSTRLP

In stock

SKU: IRG4BC20UDSTRLP-9
Manufacturer

Infineon Technologies

JESD-609 Code

e3

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

13A

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Reach Compliance Code

compliant

Time@Peak Reflow Temperature-Max (s)

30

Published

2010

Qualification Status

Not Qualified

Turn On Time

55 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Reverse Recovery Time

37ns

Voltage - Collector Emitter Breakdown (Max)

600V

Power Dissipation-Max (Abs)

60W

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

COLLECTOR

Turn Off Time-Nom (toff)

320 ns

Gate Charge

27nC

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

39ns/93ns

Switching Energy

160μJ (on), 130μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

170ns

RoHS Status

RoHS Compliant

Infineon Technologies IRG4BC20UPBF

In stock

SKU: IRG4BC20UPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Turn Off Delay Time

86 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

60W

Factory Lead Time

16 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Additional Feature

ULTRA FAST

Voltage - Rated DC

600V

Max Power Dissipation

60W

Current Rating

13A

Element Configuration

Single

Packaging

Tube

Input Type

Standard

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

21ns/86ns

Rise Time

13ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.1V

Max Collector Current

13A

JEDEC-95 Code

TO-220AB

Input Capacitance

530pF

Turn On Time

34 ns

Vce(on) (Max) @ Vge, Ic

2.1V @ 15V, 6.5A

Turn Off Time-Nom (toff)

330 ns

Gate Charge

27nC

Turn On Delay Time

21 ns

Transistor Application

POWER CONTROL

Switching Energy

100μJ (on), 120μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

180ns

Height

16.51mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Contains Lead, Lead Free

Infineon Technologies IRG4BC20W-S

In stock

SKU: IRG4BC20W-S-9
Manufacturer

Infineon Technologies

Published

2001

Surface Mount

YES

Transistor Element Material

SILICON

Current-Collector (Ic) (Max)

13A

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Terminal Form

GULL WING

Mounting Type

Surface Mount

JESD-609 Code

e0

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Terminal Finish

Tin/Lead (Sn/Pb)

Additional Feature

LOW CONDUCTION LOSS

Terminal Position

SINGLE

Packaging

Tube

Peak Reflow Temperature (Cel)

225

Polarity/Channel Type

N-CHANNEL

Voltage - Collector Emitter Breakdown (Max)

600V

Qualification Status

Not Qualified

Configuration

SINGLE

Case Connection

COLLECTOR

Input Type

Standard

Power - Max

60W

Transistor Application

POWER CONTROL

Time@Peak Reflow Temperature-Max (s)

30

JESD-30 Code

R-PSSO-G2

Turn On Time

36 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 6.5A

Turn Off Time-Nom (toff)

300 ns

Gate Charge

26nC

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

22ns/110ns

Switching Energy

60μJ (on), 80μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC20W-SPBF

In stock

SKU: IRG4BC20W-SPBF-9
Manufacturer

Infineon Technologies

JESD-30 Code

R-PSSO-G2

Mounting Type

Surface Mount

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

JESD-609 Code

e3

Number of Terminations

2

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Position

SINGLE

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Current Rating

13A

Time@Peak Reflow Temperature-Max (s)

30

Mount

Surface Mount

Factory Lead Time

11 Weeks

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

22ns/110ns

Input Type

Standard

Transistor Application

POWER CONTROL

Rise Time

14ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

13A

Turn On Time

36 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 6.5A

Turn Off Time-Nom (toff)

300 ns

Gate Charge

26nC

Power Dissipation

60W

Element Configuration

Dual

Switching Energy

60μJ (on), 80μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

96ns

Height

9.652mm

Length

10.668mm

Width

4.826mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Case Connection

COLLECTOR

Lead Free

Lead Free

Infineon Technologies IRG4BC20WPBF

In stock

SKU: IRG4BC20WPBF-9
Manufacturer

Infineon Technologies

Published

2000

Mount

Through Hole

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 6.5A, 50 Ω, 15V

Turn Off Delay Time

110 ns

Operating Temperature

-55°C~150°C TJ

Power Dissipation

60W

Factory Lead Time

16 Weeks

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

ECCN Code

EAR99

Additional Feature

LOW CONDUCTION LOSS

Voltage - Rated DC

600V

Max Power Dissipation

60W

Terminal Position

SINGLE

Current Rating

13A

Element Configuration

Dual

Packaging

Tube

Case Connection

COLLECTOR

Current - Collector Pulsed (Icm)

52A

Td (on/off) @ 25°C

22ns/110ns

Transistor Application

MOTOR CONTROL

Rise Time

15ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

2.6V

Max Collector Current

13A

JEDEC-95 Code

TO-220AB

Turn On Time

36 ns

Vce(on) (Max) @ Vge, Ic

2.6V @ 15V, 6.5A

Turn Off Time-Nom (toff)

300 ns

Gate Charge

26nC

Input Type

Standard

Turn On Delay Time

22 ns

Switching Energy

60μJ (on), 80μJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Fall Time-Max (tf)

96ns

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

RoHS Compliant

Lead Free

Lead Free

Infineon Technologies IRG4BC30F-STRL

In stock

SKU: IRG4BC30F-STRL-9
Manufacturer

Infineon Technologies

Mounting Type

Surface Mount

Current-Collector (Ic) (Max)

31A

Test Conditions

480V, 17A, 23 Ω, 15V

Packaging

Tape & Reel (TR)

Published

2017

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Power - Max

100W

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Gate Charge

51nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

21ns/200ns

Switching Energy

230μJ (on), 1.18mJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC30F-STRLP

In stock

SKU: IRG4BC30F-STRLP-9
Manufacturer

Infineon Technologies

Min Operating Temperature

-55°C

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D2PAK

Weight

260.39037mg

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

31A

Test Conditions

480V, 17A, 23Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Mount

Surface Mount

Base Part Number

IRG4BC30F-SPBF

Max Power Dissipation

100W

Element Configuration

Single

Input Type

Standard

Power - Max

100W

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

31A

Voltage - Collector Emitter Breakdown (Max)

600V

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Gate Charge

51nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

21ns/200ns

Switching Energy

230μJ (on), 1.18mJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Infineon Technologies IRG4BC30F-STRRP

In stock

SKU: IRG4BC30F-STRRP-9
Manufacturer

Infineon Technologies

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Current-Collector (Ic) (Max)

31A

Test Conditions

480V, 17A, 23 Ω, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2000

Part Status

Obsolete

Mounting Type

Surface Mount

Input Type

Standard

Base Part Number

IRG4BC30F-SPBF

Power - Max

100W

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Gate Charge

51nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

21ns/200ns

Switching Energy

230μJ (on), 1.18mJ (off)

Infineon Technologies IRG4BC30FDPBF

In stock

SKU: IRG4BC30FDPBF-9
Manufacturer

Infineon Technologies

Published

1998

Mounting Type

Through Hole

Package / Case

TO-220-3

Number of Pins

3

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 17A, 23 Ω, 15V

Turn Off Delay Time

230 ns

Operating Temperature

-55°C~150°C TJ

Case Connection

COLLECTOR

Packaging

Tube

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

3

Termination

Through Hole

ECCN Code

EAR99

Voltage - Rated DC

600V

Max Power Dissipation

100W

Current Rating

31A

Element Configuration

Single

Power Dissipation

100W

Mount

Through Hole

Factory Lead Time

16 Weeks

Gate Charge

51nC

Turn On Delay Time

42 ns

Rise Time

26ns

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

31A

Reverse Recovery Time

42 ns

JEDEC-95 Code

TO-220AB

Turn On Time

69 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Turn Off Time-Nom (toff)

620 ns

Current - Collector Pulsed (Icm)

124A

Td (on/off) @ 25°C

42ns/230ns

Input Type

Standard

Switching Energy

630μJ (on), 1.39mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Height

8.77mm

Length

10.54mm

Width

4.69mm

Radiation Hardening

No

REACH SVHC

No SVHC

RoHS Status

ROHS3 Compliant

Transistor Application

POWER CONTROL

Lead Free

Lead Free

Infineon Technologies IRG4BC30FDSTRRP

In stock

SKU: IRG4BC30FDSTRRP-9
Manufacturer

Infineon Technologies

Packaging

Tape & Reel (TR)

Mounting Type

Surface Mount

Number of Pins

3

Weight

260.39037mg

Transistor Element Material

SILICON

Collector-Emitter Breakdown Voltage

600V

Number of Elements

1

Test Conditions

480V, 17A, 23 Ω, 15V

Time@Peak Reflow Temperature-Max (s)

30

Operating Temperature

-55°C~150°C TJ

Published

2004

JESD-609 Code

e3

Part Status

Last Time Buy

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number of Terminations

2

Max Power Dissipation

100W

Terminal Form

GULL WING

Peak Reflow Temperature (Cel)

260

Mount

Surface Mount

Factory Lead Time

13 Weeks

Turn On Time

69 ns

Element Configuration

Single

Input Type

Standard

Power - Max

100W

Transistor Application

POWER CONTROL

Polarity/Channel Type

N-CHANNEL

Collector Emitter Voltage (VCEO)

1.8V

Max Collector Current

31A

Reverse Recovery Time

42 ns

Vce(on) (Max) @ Vge, Ic

1.8V @ 15V, 17A

Turn Off Time-Nom (toff)

620 ns

JESD-30 Code

R-PSSO-G2

Gate Charge

51nC

Current - Collector Pulsed (Icm)

120A

Td (on/off) @ 25°C

42ns/230ns

Switching Energy

630μJ (on), 1.39mJ (off)

Gate-Emitter Voltage-Max

20V

Gate-Emitter Thr Voltage-Max

6V

Radiation Hardening

No

Case Connection

COLLECTOR

RoHS Status

ROHS3 Compliant

Infineon Technologies IRG4BC30K-S

In stock

SKU: IRG4BC30K-S-9
Manufacturer

Infineon Technologies

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Current-Collector (Ic) (Max)

28A

Test Conditions

480V, 16A, 23Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tube

Published

2000

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Input Type

Standard

Power - Max

100W

Voltage - Collector Emitter Breakdown (Max)

600V

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Gate Charge

67nC

Current - Collector Pulsed (Icm)

58A

Td (on/off) @ 25°C

26ns/130ns

Switching Energy

360μJ (on), 510μJ (off)

RoHS Status

Non-RoHS Compliant

Infineon Technologies IRG4BC30K-STRLP

In stock

SKU: IRG4BC30K-STRLP-9
Manufacturer

Infineon Technologies

Max Power Dissipation

100W

Mounting Type

Surface Mount

Number of Pins

3

Supplier Device Package

D2PAK

Collector-Emitter Breakdown Voltage

600V

Current-Collector (Ic) (Max)

28A

Test Conditions

480V, 16A, 23Ohm, 15V

Operating Temperature

-55°C~150°C TJ

Packaging

Tape & Reel (TR)

Published

2010

Part Status

Obsolete

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mount

Surface Mount

Element Configuration

Single

Base Part Number

IRG4BC30K-SPBF

Input Type

Standard

Power - Max

100W

Collector Emitter Voltage (VCEO)

2.7V

Max Collector Current

28A

Voltage - Collector Emitter Breakdown (Max)

600V

Max Breakdown Voltage

600V

Vce(on) (Max) @ Vge, Ic

2.7V @ 15V, 16A

Gate Charge

67nC

Current - Collector Pulsed (Icm)

56A

Td (on/off) @ 25°C

26ns/130ns

Switching Energy

360μJ (on), 510μJ (off)

Radiation Hardening

No

RoHS Status

RoHS Compliant

Lead Free

Lead Free