Showing 853–864 of 3680 results
Infineon Technologies IRG4BC30K-STRRP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Min Operating Temperature |
-55°C |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
28A |
| Test Conditions |
480V, 16A, 23Ohm, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tape & Reel (TR) |
| Published |
2000 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Mount |
Surface Mount |
| Base Part Number |
IRG4BC30K-SPBF |
| Max Power Dissipation |
100W |
| Element Configuration |
Single |
| Input Type |
Standard |
| Power - Max |
100W |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
28A |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 16A |
| Gate Charge |
67nC |
| Current - Collector Pulsed (Icm) |
56A |
| Td (on/off) @ 25°C |
26ns/130ns |
| Switching Energy |
360μJ (on), 510μJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG4BC30KDSTRLP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mount |
Surface Mount |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Weight |
260.39037mg |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 16A, 23 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Base Part Number |
IRG4BC30KD-SPBF |
| Factory Lead Time |
13 Weeks |
| JESD-609 Code |
e3 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Max Power Dissipation |
100W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Packaging |
Tape & Reel (TR) |
| JESD-30 Code |
R-PSSO-G2 |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 16A |
| Turn Off Time-Nom (toff) |
370 ns |
| Input Type |
Standard |
| Power - Max |
100W |
| Transistor Application |
MOTOR CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
28A |
| Reverse Recovery Time |
42 ns |
| Max Breakdown Voltage |
600V |
| Turn On Time |
100 ns |
| Element Configuration |
Single |
| Case Connection |
COLLECTOR |
| Gate Charge |
67nC |
| Current - Collector Pulsed (Icm) |
56A |
| Td (on/off) @ 25°C |
60ns/160ns |
| Switching Energy |
600μJ (on), 580μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
120ns |
| Radiation Hardening |
No |
| RoHS Status |
ROHS3 Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG4BC30KPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mount |
Through Hole |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 16A, 23 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Power Dissipation |
100W |
| Factory Lead Time |
16 Weeks |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| ECCN Code |
EAR99 |
| Additional Feature |
LOW CONDUCTION LOSS |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
100W |
| Terminal Position |
SINGLE |
| Current Rating |
28A |
| Element Configuration |
Dual |
| Packaging |
Tube |
| Case Connection |
COLLECTOR |
| Current - Collector Pulsed (Icm) |
58A |
| Td (on/off) @ 25°C |
26ns/130ns |
| Rise Time |
28ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.7V |
| Max Collector Current |
28A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
54 ns |
| Vce(on) (Max) @ Vge, Ic |
2.7V @ 15V, 16A |
| Turn Off Time-Nom (toff) |
380 ns |
| Gate Charge |
67nC |
| Input Type |
Standard |
| Transistor Application |
MOTOR CONTROL |
| Switching Energy |
360μJ (on), 510μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
170ns |
| Height |
15.24mm |
| Length |
10.5156mm |
| Width |
14.6812mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG4BC30S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Package / Case |
TO-220-3 |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
34A |
| Number of Elements |
1 |
| Test Conditions |
480V, 18A, 23 Ω, 15V |
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Mounting Type |
Through Hole |
| Published |
2000 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Operating Temperature |
-55°C~150°C TJ |
| JESD-30 Code |
R-PSFM-T3 |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Turn On Time |
40 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
100W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-220AB |
| Qualification Status |
Not Qualified |
| Configuration |
SINGLE |
| Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 18A |
| Turn Off Time-Nom (toff) |
1550 ns |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
68A |
| Td (on/off) @ 25°C |
22ns/540ns |
| Switching Energy |
260μJ (on), 3.45mJ (off) |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC30S-SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Operating Temperature |
-55°C~150°C TJ |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
34A |
| Test Conditions |
480V, 18A, 23Ohm, 15V |
| Max Power Dissipation |
100W |
| Mount |
Surface Mount |
| Packaging |
Tube |
| Published |
2010 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Turn Off Delay Time |
540 ns |
| Current Rating |
34A |
| Max Collector Current |
34A |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation |
100W |
| Input Type |
Standard |
| Turn On Delay Time |
22 ns |
| Power - Max |
100W |
| Rise Time |
18ns |
| Collector Emitter Voltage (VCEO) |
1.6V |
| Base Part Number |
IRG4BC30S-SPBF |
| Element Configuration |
Single |
| Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 18A |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
68A |
| Td (on/off) @ 25°C |
22ns/540ns |
| Switching Energy |
260μJ (on), 3.45mJ (off) |
| Radiation Hardening |
No |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG4BC30SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-609 Code |
e3 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 18A, 23 Ω, 15V |
| Turn Off Delay Time |
540 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| Element Configuration |
Dual |
| Published |
2000 |
| Part Status |
Last Time Buy |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
100W |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
250 |
| Current Rating |
34A |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Gate Charge |
50nC |
| Case Connection |
COLLECTOR |
| Turn On Delay Time |
22 ns |
| Transistor Application |
POWER CONTROL |
| Rise Time |
18ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
1.6V |
| Max Collector Current |
34A |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
40 ns |
| Vce(on) (Max) @ Vge, Ic |
1.6V @ 15V, 18A |
| Turn Off Time-Nom (toff) |
1550 ns |
| Current - Collector Pulsed (Icm) |
68A |
| Td (on/off) @ 25°C |
22ns/540ns |
| Power Dissipation |
100W |
| Switching Energy |
260μJ (on), 3.45mJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
590ns |
| Height |
15.24mm |
| Length |
10.54mm |
| Width |
4.69mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Input Type |
Standard |
| Lead Free |
Lead Free |
Infineon Technologies IRG4BC30U
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED |
| Surface Mount |
NO |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
23A |
| Number of Elements |
1 |
| Test Conditions |
480V, 12A, 23 Ω, 15V |
| Packaging |
Tube |
| Published |
2000 |
| Operating Temperature |
-55°C~150°C TJ |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Additional Feature |
ULTRA FAST SWITCHING |
| Terminal Position |
SINGLE |
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED |
| Package / Case |
TO-220-3 |
| Mounting Type |
Through Hole |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Turn On Time |
33 ns |
| Case Connection |
COLLECTOR |
| Input Type |
Standard |
| Power - Max |
100W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| JEDEC-95 Code |
TO-220AB |
| Qualification Status |
Not Qualified |
| JESD-30 Code |
R-PSFM-T3 |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
320 ns |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
92A |
| Td (on/off) @ 25°C |
17ns/78ns |
| Switching Energy |
160μJ (on), 200μJ (off) |
| Configuration |
SINGLE |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC30U-S
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| JESD-30 Code |
R-PSSO-G2 |
| Transistor Element Material |
SILICON |
| Current-Collector (Ic) (Max) |
23A |
| Number of Elements |
1 |
| Test Conditions |
480V, 12A, 23 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Packaging |
Tube |
| JESD-609 Code |
e3 |
| Part Status |
Obsolete |
| Published |
1998 |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| ECCN Code |
EAR99 |
| Terminal Position |
SINGLE |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Surface Mount |
YES |
| Mounting Type |
Surface Mount |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
320 ns |
| Input Type |
Standard |
| Power - Max |
100W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Power Dissipation-Max (Abs) |
100W |
| Turn On Time |
33 ns |
| Configuration |
SINGLE |
| Qualification Status |
Not Qualified |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
92A |
| Td (on/off) @ 25°C |
17ns/78ns |
| Switching Energy |
160μJ (on), 200μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
150ns |
| Case Connection |
COLLECTOR |
| RoHS Status |
Non-RoHS Compliant |
Infineon Technologies IRG4BC30U-SPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Packaging |
Tube |
| Mounting Type |
Surface Mount |
| Number of Pins |
3 |
| Supplier Device Package |
D2PAK |
| Collector-Emitter Breakdown Voltage |
600V |
| Current-Collector (Ic) (Max) |
23A |
| Test Conditions |
480V, 12A, 23Ohm, 15V |
| Max Power Dissipation |
100W |
| Mount |
Surface Mount |
| Published |
1998 |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Termination |
SMD/SMT |
| Max Operating Temperature |
150°C |
| Min Operating Temperature |
-55°C |
| Voltage - Rated DC |
600V |
| Operating Temperature |
-55°C~150°C TJ |
| Current Rating |
23A |
| Voltage - Collector Emitter Breakdown (Max) |
600V |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
| Power Dissipation |
100W |
| Input Type |
Standard |
| Power - Max |
100W |
| Rise Time |
9.6ns |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
23A |
| Base Part Number |
IRG4BC30U-SPBF |
| Element Configuration |
Single |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
92A |
| Td (on/off) @ 25°C |
17ns/78ns |
| Switching Energy |
160μJ (on), 200μJ (off) |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Lead Free |
Lead Free |
Infineon Technologies IRG4BC30U-STRRP
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Base Part Number |
IRG4BC30U-SPBF |
| Number of Pins |
3 |
| Weight |
260.39037mg |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 12A, 23 Ω, 15V |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2010 |
| JESD-609 Code |
e3 |
| Packaging |
Tape & Reel (TR) |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
2 |
| Terminal Finish |
MATTE TIN OVER NICKEL |
| Max Power Dissipation |
100W |
| Terminal Form |
GULL WING |
| Peak Reflow Temperature (Cel) |
260 |
| Time@Peak Reflow Temperature-Max (s) |
30 |
| Mounting Type |
Surface Mount |
| Mount |
Surface Mount |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
320 ns |
| Input Type |
Standard |
| Power - Max |
100W |
| Transistor Application |
POWER CONTROL |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
23A |
| Max Breakdown Voltage |
600V |
| Turn On Time |
33 ns |
| Element Configuration |
Single |
| JESD-30 Code |
R-PSSO-G2 |
| Gate Charge |
50nC |
| Current - Collector Pulsed (Icm) |
92A |
| Td (on/off) @ 25°C |
17ns/78ns |
| Switching Energy |
160μJ (on), 200μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
150ns |
| Radiation Hardening |
No |
| Case Connection |
COLLECTOR |
| RoHS Status |
RoHS Compliant |
Infineon Technologies IRG4BC30UDPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Published |
2000 |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 12A, 23 Ω, 15V |
| Turn Off Delay Time |
91 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Case Connection |
COLLECTOR |
| Packaging |
Tube |
| Part Status |
Obsolete |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
100W |
| Current Rating |
23A |
| Element Configuration |
Single |
| Power Dissipation |
100W |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Gate Charge |
50nC |
| Turn On Delay Time |
40 ns |
| Rise Time |
21ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
23A |
| Reverse Recovery Time |
42 ns |
| JEDEC-95 Code |
TO-220AB |
| Turn On Time |
62 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
300 ns |
| Current - Collector Pulsed (Icm) |
92A |
| Td (on/off) @ 25°C |
40ns/91ns |
| Input Type |
Standard |
| Switching Energy |
380μJ (on), 160μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
RoHS Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Lead Free |
Infineon Technologies IRG4BC30UPBF
In stock
| Manufacturer |
Infineon Technologies |
|---|---|
| Case Connection |
COLLECTOR |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Number of Pins |
3 |
| Transistor Element Material |
SILICON |
| Collector-Emitter Breakdown Voltage |
600V |
| Number of Elements |
1 |
| Test Conditions |
480V, 12A, 23 Ω, 15V |
| Turn Off Delay Time |
78 ns |
| Operating Temperature |
-55°C~150°C TJ |
| Published |
2000 |
| Part Status |
Last Time Buy |
| Packaging |
Tube |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| Number of Terminations |
3 |
| Termination |
Through Hole |
| ECCN Code |
EAR99 |
| Additional Feature |
ULTRA FAST SWITCHING |
| Voltage - Rated DC |
600V |
| Max Power Dissipation |
100W |
| Current Rating |
23A |
| Element Configuration |
Single |
| Power Dissipation |
100W |
| Mount |
Through Hole |
| Factory Lead Time |
16 Weeks |
| Current - Collector Pulsed (Icm) |
92A |
| Td (on/off) @ 25°C |
17ns/78ns |
| Rise Time |
9.6ns |
| Polarity/Channel Type |
N-CHANNEL |
| Collector Emitter Voltage (VCEO) |
2.1V |
| Max Collector Current |
23A |
| JEDEC-95 Code |
TO-220AB |
| Input Capacitance |
1.1nF |
| Turn On Time |
33 ns |
| Vce(on) (Max) @ Vge, Ic |
2.1V @ 15V, 12A |
| Turn Off Time-Nom (toff) |
320 ns |
| Gate Charge |
50nC |
| Turn On Delay Time |
17 ns |
| Input Type |
Standard |
| Switching Energy |
160μJ (on), 200μJ (off) |
| Gate-Emitter Voltage-Max |
20V |
| Gate-Emitter Thr Voltage-Max |
6V |
| Fall Time-Max (tf) |
150ns |
| Height |
16.51mm |
| Length |
10.668mm |
| Width |
4.826mm |
| Radiation Hardening |
No |
| REACH SVHC |
No SVHC |
| RoHS Status |
ROHS3 Compliant |
| Transistor Application |
POWER CONTROL |
| Lead Free |
Contains Lead, Lead Free |